On the nucleation of GaP/GaAs and the effect of buried stress fields

We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.

Caracterização das inclusões e da estrutura bruta de fusão de aço superclean para aplicações em molas dinâmicas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Nanocompósitos baseados em celulose bacteriana para aplicações ópticas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo eletroquímico e termoanalítico dos sistemas Ir/Hg e Pt - (30%) Ir/Hg

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Partículas magnéticas: ferrita de ítrio 'Y IND. 3''FE IND. 5''O IND. 12' (YIG) recoberta com sílica ('SIO IND. 2')

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Second Phase Precipitation in Ultrafine-grained Ferrite Steel

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Titanate nanotubes produced from microwave-assisted hydrothermal synthesis: Photocatalytic and structural properties

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização de vidros contendo nanopartículas de Ag

This work consists of preparation and characterization of glasses containing transition noble metals and the study of optical properties of such materials. The glasses were prepared by quenching of the glass melt followed by heat treatment and polishing of the monoliths. The structural characterization of glasses was made using differential thermal analysis, X-ray, Raman and infrared spectroscopies, while the optical properties were studied by UV-Vis and M-Lines spectroscopies. Preliminary results have shown that the color of the glasses is dependent on both concentration of silver and the melting temperature of the melt. Controlled heat treatments have been used to induce the crystallization of Ag nanoparticles within the glass. The study of crystallization was accompanied by electron microscopy and UV-Vis spectroscopy. Data from electron diffraction, as well as chemical analysis, EDX, were obtained using a transmission electron microscope. EDX data have shown that the atomic percentage of Ag is higher on the nanoparticle. X-ray diffraction was used in order to characterize the composition of the crystals and cubic AgCl was identified as the main crystallized nanophase obtained after annealing

Structural and functional characterization of barium zirconium titanate/epoxy composites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Orange pectin mediated growth and stability of aqueous gold and silver nanocolloids

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and optical properties of ZnS/MgNb2O6 heterostructures

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A complex structure in the (beta+gamma(0)) region of the Cu-Al alloys

The identification, characterization and stability range of the phases present in a series of Cu-Al alloys, with Al content from 11.0 to 15.0 wt.%, were studied by Differential Thermal Analysis (DTA), Optical Microscopy (OM), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Selected Area Electron Diffraction (SAED), Auger Electron Spectroscopy (AES), Energy Dispersive X-Ray Spectroscopy (EDX) and X-Ray Diffraction (XRD). In some alloys and in a temperature range from 790 degrees C to 850 degrees C the presence of black spots exhibiting regular shapes and an homogeneous distribution was noticed through metallographic microscopy. Data from TEM and AES indicate that these spots are made of two monocrystalline phases having different Al contents and a crystallographic orientation relationship. (C) 1998 Elsevier B.V. S.A. All rights reserved.

Nanoestruturas de GaN crescidas pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.