898 resultados para Dual Submission


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Advances in the dual electron-beam recrystallization technique arising from the fast scanning of a line beam parallel to the edges of narrow seeding windows are described. The resultant recrystallized layers are essentially defect-free, have good surface flatness, and cover large areas.

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High-speed configuration results of a conventional 850 nm VCSEL that is modified to operate as an efficient avalanche detector as well as a laser are discussed. The measured laser-to-detector reconfiguration delay of 3.2 ns is longer than the 1.2 ns detector-to-detector reconfiguration delay.

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In this paper, we describe a video tracking application using the dual-tree polar matching algorithm. The models are specified in a probabilistic setting, and a particle ilter is used to perform the sequential inference. Computer simulations demonstrate the ability of the algorithm to track a simulated video moving target in an urban environment with complete and partial occlusions. © The Institution of Engineering and Technology.

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Here we present a novel signal processing technique for a square wave thermally-modulated carbon black/polymer composite chemoresistor. The technique consists of only two mathematical operations: summing the off-transient and on-transient conductance signals; and subtracting the steady-state conductance signal. A single carbon black/polyvinylpyrrolidone composite chemo -resistor was fabricated and used to demonstrate the validity of the technique. Classification of water, methanol and ethanol vapours was successfully performed using only the peak time of the resultant curves. Quantification of the different vapours was also possible using the height of the peaks, because it was linearly proportional to concentration. This technique does not require zero-gas calibration and thus is superior to previously reported methods. ©2009 IEEE.

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Snake venom Kunitz/BPTI members are good tools for understanding of structure-functional relationship between serine proteases and their inhibitors. A novel dual Kunitz/BPTI serine proteinase inhibitor named OH-TCI (trypsin- and chymotrypsin-dual inhibito

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This paper reports on a switchable multi-band filter response achieved within a single micro-electro-mechanical device. A prototype device fabricated in a SOI process demonstrates a voltage programmable and tunable, dual-band, band-pass/band-stop response. Both analytical and finite element models are introduced in this paper to elucidate the operating principle of the filter and to guide filter design. Voltage programmability of the filter characteristic is demonstrated with the ability to independently tune the centre frequency and bandwidth for each band. A representative measurement shows that the minimum 3 dB-bandwidth (BW) is 155 Hz, 140Hz, and 20 dB-BW is 216 Hz, 203Hz for the upper-band and lower-band center frequencies located at 131.5 kHz and 130.7 kHz, respectively. © 2011 IEEE.

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Preliminary midwater fishing trials were conducted off Cochin with an 11m dual purpose trawl during the monsoon months when the prawns were available in the column layers. Further, with a view to assess its suitability as bottom trawl, the gear with suitable modifications in the rigging was towed in comparison with a 15m bottom trawl along the depth ranges of 5-10m and 10-20m and the fishing operations were found satisfactory.

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In this paper a novel visualisation method for diffusion tensor MRI datasets is introduced. This is based on the use of Complex Wavelets in order to produce "stripy" textures which depict the anisotropic component of the diffusion tensors. Grey-scale pixel intensity is used to show the isotropic component. This paper also discusses enhancements of the technique for 3D visualisation. © 2004 IEEE.

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A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.