991 resultados para Direct currents
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基于伪随机数生成技术促生白噪声扰动,以高精度迎风/对称紧致混合差分算法求解二维/三维非定常可压Navier-Stokes方程,揭示了可压自由剪切层初始剪切过程中扰动的线性演化特征,以及该过程对扰动波数和方向的内在选择性.验证了所用算法的有效性,表明线性理论同数值模拟相结合是可压剪切层研究的合理途径之一.
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Transport critical current measurements have been carried out on melt-processed thick films of YBa2Cu3O7-δ on yttria-stabilized zirconia in fields of up to 8 T both within grains and across grain boundaries. These measurements yield Jc values of ∼3000 A cm-2 at 4.2 K and zero magnetic field and 400 A cm -2 at 77 K and zero magnetic field, taking the entire sample width as the definitive dimension. Optical and scanning electron microscopy reveals that the thick-film grains consist typically of a central "hub" region ∼50 μm in diameter, which is well connected to radial subgrains or "spokes" which extend ∼1 mm to define the complete grain structure. Attempts have been made to correlate the transport measurements of inter- and intra-hub-and-spoke (H-S) critical current with values of this parameter derived previously from magnetization measurements. Analysis of the transport measurements indicates that current flow through H-S grains is constrained to paths along the spokes via the grain hub. Taking the size of the hub as the definitive dimension yields an intra-H-S grain Jc of ∼60 000 A cm-2 at 4.2 K and 0 T, which is in reasonable agreement with the magnetization data. Experiments in which the hub is removed from individual grains confirm that this feature determines critically the J c of the film.
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In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.
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This paper presents a method for the fast and direct extraction of model parameters for capacitive MEMS resonators from their measured transmission response such as quality factor, resonant frequency, and motional resistance. We show that these parameters may be extracted without having to first de-embed the resonator motional current from the feedthrough. The series and parallel resonances from the measured electrical transmission are used to determine the MEMS resonator circuit parameters. The theoretical basis for the method is elucidated by using both the Nyquist and susceptance frequency response plots, and applicable in the limit where CF > CmQ; commonly the case when characterizing MEMS resonators at RF. The method is then applied to the measured electrical transmission for capacitively transduced MEMS resonators, and compared against parameters obtained using a Lorentzian fit to the measured response. Close agreement between the two methods is reported herein. © 2010 IEEE.
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Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely populated nanotube forests, and precisely patterned arrays of nanotubes. The high-aspect ratio nanotubes (∼50 nm in diameter and 5 microns long) produced are metallic in nature and direct contact electrical measurements reveal that each nanotube has a current carrying capacity of 107-108 A/cm2, making them excellent candidates as field emission sources. We examined the field emission characteristics of dense nanotube forests as well as sparse nanotube forests and found that the sparse forests had significantly lower turn-on fields and higher emission currents. This is due to a reduction in the field enhancement of the nanotubes due to electric field shielding from adjacent nanotubes in the dense nanotube arrays. We thus fabricated a uniform array of single nanotubes to attempt to overcome these issues and will present the field emission characteristics of this.
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This paper presents a method for fast and accurate determination of parameters relevant to the characterization of capacitive MEMS resonators like quality factor (Q), resonant frequency (fn), and equivalent circuit parameters such as the motional capacitance (Cm). In the presence of a parasitic feedthrough capacitor (CF) appearing across the input and output ports, the transmission characteristic is marked by two resonances: series (S) and parallel (P). Close approximations of these circuit parameters are obtained without having to first de-embed the resonator motional current typically buried in feedthrough by using the series and parallel resonances. While previous methods with the same objective are well known, we show that these are limited to the condition where CF ≪ CmQ. In contrast, this work focuses on moderate capacitive feedthrough levels where CF > CmQ, which are more common in MEMS resonators. The method is applied to data obtained from the measured electrical transmission of fabricated SOI MEMS resonators. Parameter values deduced via direct extraction are then compared against those obtained by a full extraction procedure where de-embedding is first performed and followed by a Lorentzian fit to the data based on the classical transfer function associated with a generic LRC series resonant circuit. © 2011 Elsevier B.V. All rights reserved.
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Arc root motions in generating dc argon-hydrogen plasma at reduced pressure are optically observed using a high-speed video camera. The time resolved angular position of the arc root attachment point is measured and analysed. The arc root movement is characterized as a chaotic and jumping motion along the circular direction on the anode surface.
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Direct numerical simulation of transition How over a blunt cone with a freestream Mach number of 6, Reynolds number of 10,000 based on the nose radius, and a 1-deg angle of attack is performed by using a seventh-order weighted essentially nonoscillatory scheme for the convection terms of the Navier-Stokes equations, together with an eighth-order central finite difference scheme for the viscous terms. The wall blow-and-suction perturbations, including random perturbation and multifrequency perturbation, are used to trigger the transition. The maximum amplitude of the wall-normal velocity disturbance is set to 1% of the freestream velocity. The obtained transition locations on the cone surface agree well with each other far both cases. Transition onset is located at about 500 times the nose radius in the leeward section and 750 times the nose radius in the windward section. The frequency spectrum of velocity and pressure fluctuations at different streamwise locations are analyzed and compared with the linear stability theory. The second-mode disturbance wave is deemed to be the dominating disturbance because the growth rate of the second mode is much higher than the first mode. The reason why transition in the leeward section occurs earlier than that in the windward section is analyzed. It is not because of higher local growth rate of disturbance waves in the leeward section, but because the growth start location of the dominating second-mode wave in the leeward section is much earlier than that in the windward section.
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Direct numerical simulation (DNS) is used to study flow characteristics after interaction of a planar shock with a spherical media interface in each side of which the density is different. This interfacial instability is known as the Richtmyer-Meshkov (R-M) instability. The compressible Navier-Stoke equations are discretized with group velocity control (GVC) modified fourth order accurate compact difference scheme. Three-dimensional numerical simulations are performed for R-M instability installed passing a shock through a spherical interface. Based on numerical results the characteristics of 3D R-M instability are analysed. The evaluation for distortion of the interface, the deformation of the incident shock wave and effects of refraction, reflection and diffraction are presented. The effects of the interfacial instability on produced vorticity and mixing is discussed.
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Unlike previous mechanical actuator loading methods, in this study, a hydrodynamic loading method was employed in a flow flume for simulating ocean currents induced submarine pipeline stability on a sandy seabed. It has been observed that, in the process of pipeline losing lateral stability in currents, there usually exist three characteristic times: (1) onset of sand scour; (2) slight lateral displacement of pipeline; and (3) breakout of pipeline. An empirical linear relationship is established between the dimensionless submerged weight of pipeline and Froude number for describing pipeline lateral stability in currents, in which the current-pipe-soil coupling effects are reflected. Scale effects are examined with the method of "modeling of models," and the sand particle size effects on pipeline stability are also discussed. Moreover, the pipeline stability in currents is compared with that in waves, which indicates that the pipeline laid directly upon the sandy seabed is more laterally stable in currents than in waves.