424 resultados para DIODES


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In this paper, we report photovoltaic devices fabricated from lead sulfide nanocrystals and the conducting polymer poly(2-methoxy-5-(2'-ethyl-hexyloxy)-p-phenylene vinylene). This composite material was produced via a new single-pot synthesis which solves many of the issues associated with existing methods. Our devices have white light power conversion efficiencies under AM 1.5 illumination of 0.7% and single wavelength conversion efficiencies of 1.1%. Additionally, they exhibit remarkably good ideality factors (n = 1.15). Our measurements show that these composites have significant potential as soft optoelectronic materials.

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The laser diode (LD) is a unique light source that can efficiently produce all radiant energy within the narrow wavelength range used most effectively by a photosynthetic microorganism. We have investigated the use of a single type of LID for the cultivation of the well-studied anoxygenic photosynthetic bacterium, Rhodobacter capsulatus (Rb. capsulatus). An array of vertical-cavity surface-emitting lasers (VCSELs) was driven with a current of 25 mA, and delivered radiation at 860 nm with 0.4 nm linewidth. The emitted light was found to be a suitable source of radiant energy for the cultivation of Rb. capsulatus. The dependence of growth rate on incident irradiance was quantified. Despite the unusual nearly monochromatic light source used in these experiments, no significant changes in the pigment composition and in the distribution of bacteriochlorophyll between LHII and LHI-RC were detected in bacterial cells transferred from incandescent light to laser light. We were also able to show that to achieve a given growth rate in a light-limited culture, the VCSEL required only 30% of the electricity needed by an incandescent bulb, which is of great significance for the potential use of laser-devices in biotechnological applications and photobioreactor construction. (c) 2006 Wiley Periodicals, Inc.

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We optimized the emission efficiency from a microcavity OLEDs consisting of widely used organic materials, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) (Alq(3)) as emitting and electron transporting layer. LiF/Al was considered as a cathode, while metallic Ag anode was used. TiO2 and Al2O3 layers were stacked on top of the cathode to alter the properties of the top mirror. The electroluminescence emission spectra, electric field distribution inside the device, carrier density, recombination rate and exciton density were calculated as a function of the position of the emission layer. The results show that for certain TiO2 and Al2O3 layer thicknesses, light output is enhanced as a result of the increase in both the reflectance and transmittance of the top mirror. Once the optimum structure has been determined, the microcavity OLED devices can be fabricated and characterized, and comparisons between experiments and theory can be made.

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We report on the effect of the replacement of the conventional ITO anode with the semitransparent metallic material on the performance of microcavity OLEDs. We performed comprehensive simulations of the emission from microcavity OLEDs consisting of widely used organic materials, N,N′-di(naphthalene-1- yl)-N,N′-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) (Alq3) as emitting and electron transporting layer. Silver and LiF/Al were considered as a cathode, while metallic (Au and Ag) anode was used and simulations were performed on devices with both the metallic and conventional ITO anode. The electroluminescence emission spectra, electric field distribution inside the device, carrier density, recombination rate and exciton density were calculated as a function of the position of the emission layer. The results show that the metallic anode enhances light output and that optimum emission from a microcavity OLED is achieved when the position of the recombination region is aligned with the antinode of the standing wave inside the cavity. The microcavity OLED devices with Ag/Ag and Ag/Au mirrors were fabricated and characterized. The experimental results have been compared to the simulations and the influence of the different anode, emission region width and position on the performance of microcavity OLEDs was discussed.

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The following topics were dealt with: semiconductor growth (MBE, PECVD, MOCVD, MOVPE) and characterizations; high-electron mobility transistors (HEMTs); microcavity organic light emitting diode (MOLED); semiconductor superlattices; photodiode arrays; MEMS structures; lithography;semiconductor lasers; semiconductor optical amplifiers; surface treatment and annealing

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Background: As light-emitting diodes become more common as the light source for low vision aids, the effect of illumination colour temperature on magnifier reading performance was investigated. Methods: Reading ability (maximum reading speed, critical print size, threshold near visual acuity) using Radner charts and subjective preference was assessed for 107 participants with visual impairment using three stand magnifiers with light emitting diode illumination colour temperatures of 2,700 K, 4,500 K and 6,000 K. The results were compared with distance visual acuity, prescribed magnification, age and the primary cause of visual impairment. Results: Reading speed, critical print size and near visual acuity were unaffected by illumination colour temperature (p > 0.05). Reading metrics decreased with worsening acuity and higher levels of prescribed magnification but acuity was unaffected by age. Each colour temperature was preferred and disliked by a similar number of patients and was unrelated to distance visual acuity, prescribed magnification and age (p > 0.05). Patients had better near acuity (p = 0.002), critical print size (p = 0.034) and maximum reading speed (p <0.001), and the improvement in near from distance acuity was greater (p = 0.004) with their preferred rather than least-liked colour temperature illumination. Conclusion: A range of colour temperature illuminations should be offered to all visually impaired individuals prescribed with an optical magnifier for near tasks to optimise subjective and objective benefits.

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Two-way power flow is nothing new and has been in practical use using line commutated converters for at least 50 years. With these types of converters, reversal of power flow can be achieved by increasing the firing angle of the devices beyond 90 degrees thus producing a negative DC voltage. Line commutated converters have several known disadvantages including: the direct current cannot be reversed, the power factor decreases when the firing angle increases and the harmonics are high on the line current. To tackle the above problems a forced commutated converter can be used. The power factor can be unity and the harmonics can be reduced. Many researchers have used PWM with different control techniques to serve the above purposes. In each converter arm, they used a forced commutated device with an antiparallel diode. Under the rectification mode of operation the current path is preponderantly through the diodes and under the inverter operation the current flows preponderantly through the forced commutated devices. Although their results were encouraging and gave a unity power factor with nearly sinusoidal current, the main disadvantage was that there were difficulties in controlling the power factor when the system is needed to operate at lagging or leading power factor. In this work, a new idea was introduced by connecting two GTOs antiparallel instead of a diode and a GTO. A single phase system using two GTO converters which are connected in series was built. One converter operates as a rectifier and the other converter operates as an inverter. In the case of the inversion mode and in each inverter arm one GTO is operated as a diode simply by switching it always on and the other antiparallel GTO is operated as a normal device to carry the inverter current. In case of the rectification mode, in each arm one GTO is always off and the other GTP is operated as a controlled device. The main advantage is that the system can be operated at lagging or leading power factor.

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Efficient suppression of relaxation oscillations in the output signal from an overdriven gain-switched laser diode was demonstrated. Several quantum-well distributed feedback laser diodes from different manufacturers were used for experimental analysis. A five-fold increase in the peak power was achieved for the tail-free operation. It was found that spectral filtering removed the nonlinearly chirped components resulting in pulse shortening by a factor of three.

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Spin coating polymer blend thin films provides a method to produce multiphase functional layers of high uniformity covering large surface areas. Applications for such layers include photovoltaics and light-emitting diodes where performance relies upon the nanoscale phase separation morphology of the spun film. Furthermore, at micrometer scales, phase separation provides a route to produce self-organized structures for templating applications. Understanding the factors that determine the final phase-separated morphology in these systems is consequently an important goal. However, it has to date proved problematic to fully test theoretical models for phase separation during spin coating, due to the high spin speeds, which has limited the spatial resolution of experimental data obtained during the coating process. Without this fundamental understanding, production of optimized micro- and nanoscale structures is hampered. Here, we have employed synchronized stroboscopic illumination together with the high light gathering sensitivity of an electron-multiplying charge-coupled device camera to optically observe structure evolution in such blends during spin coating. Furthermore the use of monochromatic illumination has allowed interference reconstruction of three-dimensional topographies of the spin-coated film as it dries and phase separates with nanometer precision. We have used this new method to directly observe the phase separation process during spinning for a polymer blend (PS-PI) for the first time, providing new insights into the spin-coating process and opening up a route to understand and control phase separation structures. © 2011 American Chemical Society.

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We report a theoretical study and simulations of a novel fiber-spin tailoring technique to suppress the polarization impairments, namely polarization mode dispersion and polarization dependent gain (PDG), in fiber Raman amplifiers. Whereas use of depolarizer or multiplexing pump laser diodes with a final degree of pump polarization of 1% for periodically spun fiber results in PDG of about 0.3 dB, we demonstrate that application of just a two-section fiber (where the first part is short and has no spin, and the second one is periodically spun) can reduce the PDG to as low as below 0.1 dB.

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Summary form only given. Broadly tunable compact visible laser sources in the spectral region of 500-650 nm are valuable in biophotonics, photomedicine and for many applications including spectroscopy, laser projection and confocal microscopy. Unfortunately, commercially available lasers of this spectral range are in practice bulky and inconvenient in use. An attractive method for the realization of portable visible laser sources is the frequency-doubling of the infrared laser diodes in a nonlinear crystal containing a waveguide [1]. Nonlinear crystal waveguides that offer an order-of-magnitude increase in the IR-to-visible conversion efficiency also enable a very different approach to second-harmonic generation (SHG) tunability in periodically-poled crystals, promising order-of-magnitude increase of wavelength range for SHG conversion. This is possible by utilization of a significant difference in the effective refractive indices of the high-order and low-order modes in multimode waveguides [2]. The recent availability of low-cost, good quality semiconductor diode lasers, offering the coverage of a broad spectral range between 1 µ?? and 1.3 µp? [3,4], in combination with well-established techniques to fabricate good quality waveguides in nonlinear crystals, allows compact tunable CW laser sources in the visible spectral region to be realized [2].

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We report the results of an experimental study aimed at improving the performance of actively Q-switched fiber lasers. Unlike generic design schemes employing photonic crystal fibers, largemodal diameter fibers or double-clad fibers, we demonstrate a high-power, actively Q-switched laser based on standard com- munication erbium doped fibers with peak irradiance beyond the state-of-the-art at 3.1 GW/cm2 . The laser had 2.2 kW peak power, 15.5 ns pulse duration and 36.8 µJ pulse energy. We have also investigated the dynamics of pulse generation and have success- fully suppressed pulse instabilities caused by backscattered laser emission reaching the pump laser diodes.

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We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs). Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations. © 2014 Elsevier Ltd.

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The high gains in performance predicted for optical immersion are difficult to achieve in practice due to total internal reflection at the lens/detector interface. By reducing the air gap at this interface optical tunneling becomes possible and the predicted gains can be realized in practical devices. Using this technique we have demonstrated large performance gains by optically immersing mid-infrared heterostructure InA1Sb LEDs and photodiodes using hypershperical germanium lenses. The development of an effective method of optical immersion that gives excellent optical coupling has produced a photodiode with a peak room temperature detectivity (D*) of 5.3 x 109 cmHz½W-1 at λpeak=5.4μm and a 40° field of view. A hyperspherically immersed LED showed a f-fold improvement in the external efficiency, and a 3-fold improvement in the directionality compared with a conventional planar LED for f/2 optical systems. The incorporation of these uncooled devices in a White cell produced a NO2 gas sensing system with 2 part-per-million sensitivity, with an LED drive current of <5mA. These results represent a significant advance in the use of solid state devices for portable gas sensing systems.

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In this paper we experimentally demonstrate a 10 Mb/s error free visible light communications (VLC) system using polymer light-emitting diodes (PLEDs) for the first time. The PLED under test is a blue emitter with ∼600 kHz bandwidth. Having such a low bandwidth means the introduction of an intersymbol interference (ISI) induced penalty at higher transmission speeds and thus the requirement for an equalizer. In this work we improve on previous literature by implementing a decision feedback equalizer, rather than a linear equalizer. Considering 7% and 20% forward error correction codes, transmission speeds up to ∼12 Mb/s can be supported.