Influence of particle morphology on nanostructural feature and conducting property in Sm-doped CeO2 sintered body

Doped ceria (CeO2,) compounds are fluorite type oxides, which show oxide ionic conductivity higher than yttria stabilized zirconia (YSZ), in oxidizing atmospheres. As a consequence of this, considerable interest has been shown in application of these materials for 'low (500-650 degreesC)' or 'intermediate (650-800 degreesC)' temperature operation, solid oxide fuel cells (SOFCs). In this study, the authors prepared two kinds of nanosize Sm-doped CeO2 particles with different morphologies: one type was round and the other was elongated. Processing these powders with different morphology produced dense materials with very different ionic conducting properties and different nanoscale microstructures. Since both particles are very fine and well dispersed, sintered bodies with high density (relative density >95% of theoretical) could be prepared using both types of powder particles. The electrical conductivity of sintered bodies prepared from these powders with different starting morphologies was very different. Materials prepared from particles having a round shape were much higher than those produced using powders with an elongated morphology. Measured activation energies of the corresponding sintered samples showed a similar trend; round particles (60 kJ/mol), elongated particles (74 kJ/mol). While X-ray diffraction (XRD) profiles of these sintered materials were identical, diffuse scatter was observed in the back.-round of selected area electron diffraction pattern recorded from both sintered bodies. This indicated an underlying structure that appeared to have been influenced by the processing technology. Detailed observation using high-resolution transmission electron microscopy (HR-TEM) revealed that the size of microdomain with ordering of cations in the sintered body made from round shape particles was much smaller than that of the sintered body made from elongated particles. Accordingly, it is concluded that the morphology of doped CeO2 powders strongly influenced the microdomain size and electrolytic properties in the doped CeO2 sintered body. (C) 2004 Elsevier B.V. All rights reserved.

Quantum trajectories for the realistic measurement of a solid-state charge qubit

We present a new model for the continuous measurement of a coupled quantum dot charge qubit. We model the effects of a realistic measurement, namely adding noise to, and filtering, the current through the detector. This is achieved by embedding the detector in an equivalent circuit for measurement. Our aim is to describe the evolution of the qubit state conditioned on the macroscopic output of the external circuit. We achieve this by generalizing a recently developed quantum trajectory theory for realistic photodetectors [P. Warszawski, H. M. Wiseman, and H. Mabuchi, Phys. Rev. A 65, 023802 (2002)] to treat solid-state detectors. This yields stochastic equations whose (numerical) solutions are the realistic quantum trajectories of the conditioned qubit state. We derive our general theory in the context of a low transparency quantum point contact. Areas of application for our theory and its relation to previous work are discussed.

Application of density functional theory to equilibrium adsorption of argon and nitrogen on amorphous silica surface

We present a new version of non-local density functional theory (NL-DFT) adapted to description of vapor adsorption isotherms on amorphous materials like non-porous silica. The novel feature of this approach is that it accounts for the roughness of adsorbent surface. The solid–fluid interaction is described in the same framework as in the case of fluid–fluid interactions, using the Weeks–Chandler–Andersen (WCA) scheme and the Carnahan–Starling (CS) equation for attractive and repulsive parts of the Helmholtz free energy, respectively. Application to nitrogen and argon adsorption isotherms on non-porous silica LiChrospher Si-1000 at their boiling points, recently published by Jaroniec and co-workers, has shown an excellent correlative ability of our approach over the complete range of pressures, which suggests that the surface roughness is mostly the reason for the observed behavior of adsorption isotherms. From the analysis of these data, we found that in the case of nitrogen adsorption short-range interactions between oxygen atoms on the silica surface and quadrupole of nitrogen molecules play an important role. The approach presented in this paper may be further used in quantitative analysis of adsorption and desorption isotherms in cylindrical pores such as MCM-41 and carbon nanotubes.

Global control and fast solid-state donor electron spin quantum computing

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio T-2/T-ops approaching the 10(6) level.

Enhancement of hydrogen physisorption on single-walled carbon nanotubes resulting from defects created by carbon bombardment

The defect effect on hydrogen adsorption on single-walled carbon nanotubes (SWNTs) has been studied by using extensive molecular dynamics simulations and density functional theory (DFT) calculations. It indicates that the defects created on the exterior wall of the SWNTs by bombarding the tube wall with carbon atoms and C-2 dimers at a collision energy of 20 eV can enhance the hydrogen adsorption potential of the SWNTs substantially. The average adsorption energy for a H-2 molecule adsorbed on the exterior wall of a defected (10,10) SWNT is similar to 150 meV, while that for a H-2 molecule adsorbed on the exterior wall of a perfect (10,10) SWNT is similar to 104 meV. The H-2 sticking coefficient is very sensitive to temperature, and has a maximum value around 70 to 90 K. The electron density contours, the local density of states, and the electron transfers obtained from the DFT calculations clearly indicate that the H-2 molecules are all physisorbed on the SWNTs. At temperatures above 200 K, most of the H-2 molecules adsorbed on the perfect SWNT are soon desorbed, but the H-2 molecules can still remain on the defected SWNTs at 300 K. The detailed processes of H-2 molecules adsorbing on and desorbing from the (10,10) SWNTs are demonstrated.

Simple approach to estimating the van der Waals interaction between carbon nanotubes

The van der Waals (vdW) interactions between carbon nanotubes (CNTs) were studied based on the continuum Lennard-Jones model. It was found that all the vdW potentials between two arbitrary CNTs fall on the same curve when plotted in terms of certain reduced parameters, the well depth, and the equilibrium vdW gap. Based on this observation, an approximate approach is developed to obtain the vdW potential between two CNTs without time-consuming computations. The vdW potential estimated by this approach is close to that obtained from complex integrations. Therefore, the developed approach can greatly simplify the calculation of vdW interactions between CNTs.

Ab initio studies of hydrogen desorption from low index magnesium hydride surface

The low index Magnesium hydride surfaces, MgH2(001) and MgH2(110), have been studied by ab intio Density Functional Theory (DFT) calculations. It was found that the MgH2(110) surface is more stable than MgH2(001) surface, which is in good agreement with the experimental observation. The H-2 desorption barriers vary depending on the crystalline surfaces that are exposed and also the specific H atom sites involved-they are found to be generally high, due to the thermodynamic stability of the MgH2, system, and are larger for the MgH2(001) surface. The pathway for recombinative desorption of one in-plane and one bridging H atom from the MgH2(110) surface was found to be the lowest energy barrier amongst those computed (172 KJ/mol) and is in good agreement with the experimental estimates. (c) 2006 Elsevier B.V. All rights reserved.

Structure of glassy GeO2

The full set of partial structure factors for glassy germania, or GeO2, were accurately measured by using the method of isotopic substitution in neutron diffraction in order to elucidate the nature of the pair correlations for this archetypal strong glass former. The results show that the basic tetrahedral Ge(O-1/2)(4) building blocks share corners with a mean inter-tetrahedral Ge-O-Ge bond angle of 132(2)degrees. The topological and chemical ordering in the resultant network displays two characteristic length scales at distances greater than the nearest neighbour. One of these describes the intermediate range order, and manifests itself by the appearance of a first sharp diffraction peak in the measured diffraction patterns at a scattering vector k(FSDP) approximate to 1.53 angstrom(-1), while the other describes so-called extended range order, and is associated with the principal peak at k(PP) = 2.66( 1) angstrom(-1). We find that there is an interplay between the relative importance of the ordering on these length scales for tetrahedral network forming glasses that is dominated by the extended range ordering with increasing glass fragility. The measured partial structure factors for glassy GeO2 are used to reproduce the total structure factor measured by using high energy x-ray diffraction and the experimental results are also compared to those obtained by using classical and first principles molecular dynamics simulations.

The structure of the rare-earth phosphate glass(Sm2O3)0.205(P2O5)0.795 studied by anomalous dispersion neutron diffraction

The role of the Sm3+ ions in the structure of vitreous Sm2O3•4P2O5 has been investigated using the neutron diffraction anomalous dispersion technique, which employs the wavelength dependence of the real and imaginary parts of the neutron scattering length close to an absorption resonance. The data described here represent the first successful complete neutron anomalous dispersion study on an amorphous material. This experimental methodology permits one to determine exclusively the closest Sm• •• Sm separation. Knowledge of the R•••R (R = rare-earth) pairwise correlation is key to understanding the optical and magnetic properties of rare-earth phosphate glasses. The anomalous difference correlation function, ΔT''(r), shows a dominant feature pertaining to a Sm•••Sm separation, centred at 4.8 Å. The substantial width and marked asymmetry of this peak indicates that the minimum approach of Sm3+ ions could be as close as 4 Å. Information on other pairwise correlations is also revealed via analysis of T (r) and ΔT (r) correlation functions: Sm3+ ions display an average co-ordination number, n Sm(O), of 7, with a mean Sm–O bond length of 2.375(5) Å whilst the PO4 tetrahedra have a mean P–O bond length of 1.538(2) Å. Second- and third-neighbour correlations are also identified. These results corroborate previous findings. Such consistency lends support to the application of the anomalous dispersion technique to determine separations.

Structure of molten TbCl3 measured by neutron diffraction

The total structure factor of molten TbCl3 at 617ºC was measured by using neutron diffraction. The data are in agreement with results from previous experimental work but the use of a diffractometer having an extended reciprocal-space measurement window leads to improved resolution in real space. Significant discrepancies with the results obtained from recent molecular dynamics simulations carried out using a polarizable ion model, in which the interaction potentials were optimized to enhance agreement with previous diffraction data, are thereby highlighted. It is hence shown that there is considerable scope for the development of this model for TbCl3 and for other trivalent metal halide systems spanning a wide range of ion size ratios.

Mechanical and electrical properties of single-walled carbon nanotubes synthesized by chemical vapor deposition

Despite the tremendous application potentials of carbon nanotubes (CNTs) proposed by researchers in the last two decades, efficient experimental techniques and methods are still in need for controllable production of CNTs in large scale, and for conclusive characterizations of their properties in order to apply CNTs in high accuracy engineering. In this dissertation, horizontally well-aligned high quality single-walled carbon nanotubes (SWCNTs) have been successfully synthesized on St-cut quartz substrate by chemical vapor deposition (CVD). Effective radial moduli (Eradial) of these straight SWCNTs have been measured by using well-calibrated tapping mode and contact mode atomic force microscopy (AFM). It was found that the measured Eradial decreased from 57 to 9 GPa as the diameter of the SWCNTs increased from 0.92 to 1.91 nm. The experimental results were consistent with the recently reported theoretical simulation data. The method used in this mechanical property test can be easily applied to measure the mechanical properties of other low-dimension nanostructures, such as nanowires and nanodots. The characterized sample is also an ideal platform for electrochemical tests. The electrochemical activities of redox probes Fe(CN)63-/4-, Ru(NH3) 63+, Ru(bpy)32+ and protein cytochrome c have been studied on these pristine thin films by using aligned SWCNTs as working electrodes. A simple and high performance electrochemical sensor was fabricated. Flow sensing capability of the device has been tested for detecting neurotransmitter dopamine at physiological conditions with the presence of Bovine serum albumin. Good sensitivity, fast response, high stability and anti-fouling capability were observed. Therefore, the fabricated sensor showed great potential for sensing applications in complicated solution.^

The 100th anniversary of the four-point probe technique: the role of probe geometries in isotropic and anisotropic systems

The electrical conductivity of solid-state matter is a fundamental physical property and can be precisely derived from the resistance measured via the four-point probe technique excluding contributions from parasitic contact resistances. Over time, this method has become an interdisciplinary characterization tool in materials science, semiconductor industries, geology, physics, etc, and is employed for both fundamental and application-driven research. However, the correct derivation of the conductivity is a demanding task which faces several difficulties, e.g. the homogeneity of the sample or the isotropy of the phases. In addition, these sample-specific characteristics are intimately related to technical constraints such as the probe geometry and size of the sample. In particular, the latter is of importance for nanostructures which can now be probed technically on very small length scales. On the occasion of the 100th anniversary of the four-point probe technique, introduced by Frank Wenner, in this review we revisit and discuss various correction factors which are mandatory for an accurate derivation of the resistivity from the measured resistance. Among others, sample thickness, dimensionality, anisotropy, and the relative size and geometry of the sample with respect to the contact assembly are considered. We are also able to derive the correction factors for 2D anisotropic systems on circular finite areas with variable probe spacings. All these aspects are illustrated by state-of-the-art experiments carried out using a four-tip STM/SEM system. We are aware that this review article can only cover some of the most important topics. Regarding further aspects, e.g. technical realizations, the influence of inhomogeneities or different transport regimes, etc, we refer to other review articles in this field.

Origine de la réduction de la durée de vie des photoporteurs dans le InGaAsP implanté à basse température

Un matériau semi-conducteur utilisé lors de la fabrication d’antennes térahertz (THz), le quaternaire InGaAsP (E_g = 0,79 eV), subit une implantation ionique de Fe suivi d’un recuit thermique rapide (RTA) dans le but d’améliorer ses propriétés d’émission. Le recuit est nécessaire afin de recristalliser la couche amorphisée lors de l’implantation, donnant lieu à un polycristal rempli de défauts de recristallisation. On constate cependant que les matériaux implantés Fe offrent de meilleures performances que ceux simplement endommagés au Ga. Dans le but de départager l’effet des défauts de recristallisation et des impuretés de Fe, des mesures de spectroscopie transitoire des niveaux profonds (DLTS) et de DLTS en courant (I-DLTS), ainsi que de spectrométrie de masse d’ions secondaires par temps de vol (ToF-SIMS) ont été effectuées sur des échantillons non implantés et d’autres recristallisés. Les mesures DLTS et I-DLTS ont pour but de caractériser les niveaux profonds générés par ces deux procédures postcroissance, tout en identifiant le rôle que jouent les impuretés de Fe sur la formation de ces niveaux profonds. De plus, le voisinage des atomes de Fe dans le matériau recristallisé a été étudié à l’aide des mesures ToF-SIMS. Les mesures DLTS sur matériau recristallisé sont peu concluantes, car la mesure de capacité est faussée par la haute résistivité du matériau. Par contre, les mesures I-DLTS sur matériau recristallisé ont permis de conclure que les impuretés de Fe sont responsables de la formation d’une grande variété de niveaux d’énergie se trouvant entre 0,25 et 0,40 eV, alors que les défauts de structure induisent des niveaux de moins de 0,25 eV. La concentration de Fe est élevée par rapport au seuil de solubilité du Fe dans le matériau recristallisé. Il serait donc plausible que des agrégats de Fe se forment. Toutefois, cette hypothèse est infirmée par l'absence de pic aux masses correspondant à la molécule ^(56)Fe_2^+ sur les spectres ToF-SIMS. De plus, un modèle simple est utilisé afin d’estimer si certaines masses présentes sur les spectres ToF-SIMS correspondent à des liaisons non induites par la mesure dans le matériau recristallisé. Bien qu’aucune liaison avec le Ga et l'As n’est détectable, ce modèle n’exclut pas la possibilité de liens préférentiels avec l’In.

Origine de la réduction de la durée de vie des photoporteurs dans le InGaAsP implanté à basse température

Un matériau semi-conducteur utilisé lors de la fabrication d’antennes térahertz (THz), le quaternaire InGaAsP (E_g = 0,79 eV), subit une implantation ionique de Fe suivi d’un recuit thermique rapide (RTA) dans le but d’améliorer ses propriétés d’émission. Le recuit est nécessaire afin de recristalliser la couche amorphisée lors de l’implantation, donnant lieu à un polycristal rempli de défauts de recristallisation. On constate cependant que les matériaux implantés Fe offrent de meilleures performances que ceux simplement endommagés au Ga. Dans le but de départager l’effet des défauts de recristallisation et des impuretés de Fe, des mesures de spectroscopie transitoire des niveaux profonds (DLTS) et de DLTS en courant (I-DLTS), ainsi que de spectrométrie de masse d’ions secondaires par temps de vol (ToF-SIMS) ont été effectuées sur des échantillons non implantés et d’autres recristallisés. Les mesures DLTS et I-DLTS ont pour but de caractériser les niveaux profonds générés par ces deux procédures postcroissance, tout en identifiant le rôle que jouent les impuretés de Fe sur la formation de ces niveaux profonds. De plus, le voisinage des atomes de Fe dans le matériau recristallisé a été étudié à l’aide des mesures ToF-SIMS. Les mesures DLTS sur matériau recristallisé sont peu concluantes, car la mesure de capacité est faussée par la haute résistivité du matériau. Par contre, les mesures I-DLTS sur matériau recristallisé ont permis de conclure que les impuretés de Fe sont responsables de la formation d’une grande variété de niveaux d’énergie se trouvant entre 0,25 et 0,40 eV, alors que les défauts de structure induisent des niveaux de moins de 0,25 eV. La concentration de Fe est élevée par rapport au seuil de solubilité du Fe dans le matériau recristallisé. Il serait donc plausible que des agrégats de Fe se forment. Toutefois, cette hypothèse est infirmée par l'absence de pic aux masses correspondant à la molécule ^(56)Fe_2^+ sur les spectres ToF-SIMS. De plus, un modèle simple est utilisé afin d’estimer si certaines masses présentes sur les spectres ToF-SIMS correspondent à des liaisons non induites par la mesure dans le matériau recristallisé. Bien qu’aucune liaison avec le Ga et l'As n’est détectable, ce modèle n’exclut pas la possibilité de liens préférentiels avec l’In.

Species Fractionation In Atomic Chains From Mechanically Stretched Alloys.

Bettini et al (2006 Nat. Nanotechnol. 1 182-5) reported the first experimental realization of linear atomic chains (LACs) composed of different atoms (Au and Ag). The different contents of Au and Ag were observed in the chains from what was found in the bulk alloys, which raises the question of what the wire composition is, if it is in equilibrium with a bulk alloy. In this work we address the thermodynamic driving force for species fractionation in LACs under tension, and we present the density-functional theory results for Ag-Au chain alloys. A pronounced stabilization of the wires with an alternating Ag-Au sequence is observed, which could be behind the experimentally observed Au enrichment in LACs from alloys with high Ag content.