Experimental demonstration of a record high 11.25Gb/s real-time optical OFDM transceiver supporting 25km SMF end-to-end transmission in simple IMDD systems.

The fastest ever 11.25Gb/s real-time FPGA-based optical orthogonal frequency division multiplexing (OOFDM) transceivers utilizing 64-QAM encoding/decoding and significantly improved variable power loading are experimentally demonstrated, for the first time, incorporating advanced functionalities of on-line performance monitoring, live system parameter optimization and channel estimation. Real-time end-to-end transmission of an 11.25Gb/s 64-QAM-encoded OOFDM signal with a high electrical spectral efficiency of 5.625bit/s/Hz over 25km of standard and MetroCor single-mode fibres is successfully achieved with respective power penalties of 0.3dB and -0.2dB at a BER of 1.0 x 10(-3) in a directly modulated DFB laser-based intensity modulation and direct detection system without in-line optical amplification and chromatic dispersion compensation. The impacts of variable power loading as well as electrical and optical components on the transmission performance of the demonstrated transceivers are experimentally explored in detail. In addition, numerical simulations also show that variable power loading is an extremely effective means of escalating system performance to its maximum potential.

Real-time experimental demonstration of low-cost VCSEL intensity-modulated 11.25 Gb/s optical OFDM signal transmission over 25 km PON systems.

The feasibility of utilising low-cost, un-cooled vertical cavity surface-emitting lasers (VCSELs) as intensity modulators in real-time optical OFDM (OOFDM) transceivers is experimentally explored, for the first time, in terms of achievable signal bit rates, physical mechanisms limiting the transceiver performance and performance robustness. End-to-end real-time transmission of 11.25 Gb/s 64-QAM-encoded OOFDM signals over simple intensity modulation and direct detection, 25 km SSMF PON systems is experimentally demonstrated with a power penalty of 0.5 dB. The low extinction ratio of the VCSEL intensity-modulated OOFDM signal is identified to be the dominant factor determining the maximum obtainable transmission performance. Experimental investigations indicate that, in addition to the enhanced transceiver performance, adaptive power loading can also significantly improve the system performance robustness to variations in VCSEL operating conditions. As a direct result, the aforementioned capacity versus reach performance is still retained over a wide VCSEL bias (driving) current (voltage) range of 4.5 mA to 9 mA (275 mVpp to 320 mVpp). This work is of great value as it demonstrates the possibility of future mass production of cost-effective OOFDM transceivers for PON applications.

7dB optical power budget improvements of 11.25Gb/s optical OFDM PON systems using optical filters

Wavelength offset super Gaussian optical filters enable 7dB increases in optical power budget of 11.25Gb/s optical OFDM PON systems using directly modulated DFBs, considerably relax filter bandwidth requirement and improve performance robustness to bandwidth variation. © 2011 Optical Society of America.

First experimental demonstration of low-cost VCSEL-intensity modulated end-to-end real-time optical OFDM signal transmission at 11.25Gb/s over 25km SSMFs

Low-cost, narrow modulation bandwidth, un-cooled VCSELs can be utilized to directly modulate 64-QAM-encoded 11.25Gb/s signals for end-to-end real-time optical OFDM transmission over 25km SSMF IMDD systems with excellent performance robustness. © 2011 Optical Society of America.

First real-time experimental demonstrations of 11.25Gb/s optical OFDMA PONs with adaptive dynamic bandwidth allocation.

End-to-end real-time experimental demonstrations are reported, for the first time, of aggregated 11.25Gb/s over 26.4km standard SMF, optical orthogonal frequency division multiple access (OOFDMA) PONs with adaptive dynamic bandwidth allocation (DBA). The demonstrated intensity-modulation and direct-detection (IMDD) OOFDMA PON system consists of two optical network units (ONUs), each of which employs a DFB-based directly modulated laser (DML) or a VCSEL-based DML for modulating upstream signals. Extensive experimental explorations of dynamic OOFDMA PON system properties are undertaken utilizing identified optimum DML operating conditions. It is shown that, for simultaneously achieving acceptable BERs for all upstream signals, the OOFDMA PON system has a >3dB dynamic ONU launch power variation range, and the BER performance of the system is insusceptible to any upstream symbol offsets slightly smaller than the adopted cyclic prefix. In addition, experimental results also indicate that, in addition to maximizing the aggregated system transmission capacity, adaptive DBA can also effectively reduce imperfections in transmission channel properties without affecting signal bit rates offered to individual ONUs.

Aquatic ecology monitoring, water quality, fish, fish catch, sanitation and disease vectors: monitoring no. 11, 4th – 9th September 2012

This monitoring survey No. 11 undertaken between 4th and 9th September 2012 is the second one to be conducted after completion of construction of Bujagali Hydropower Dam. Two pre-construction baseline surveys in April 2000 and April 2006 were conducted and during construction phase, eight monitoring surveys (September 2007, April 2008, April 2009, October 2009, April 2010, September 2010, April 2011, September 2011) were conducted.

HSF2 mRNA 在热应激和大剂量11酸睾酮诱导恒河猴生精细胞凋亡中的表达变化

为了探讨 HSF2 mRNA 在热应激和超生理剂量睾酮诱导恒河猴生精细胞凋亡中的表达变化, 作者建立了手术诱导单侧隐睾和注射大剂量11酸睾酮(TU)恒河猴动物模型, 应用3′末端标记分析(TUNEL)和原位杂交方法, 检测睾丸细胞的凋亡信号和 HSF2的表达变化. TUNEL 结果显示热应激和超生理剂量睾酮能够诱导生精细胞出现凋亡信号, 它分别于处理后第5天和第30天达到最强, 表明热应激和睾酮干扰精子发生可能是通过生精细胞凋亡的方式来实现的. HSF2 mRNA 水平在生精细胞凋亡早期(凋亡信号达到最强以前)略有降低, 而在凋亡高峰期之后其表达急剧下降. Hsf2基因与作者以前研究的 Hsp70-2基因的表达具有时间上的相关性, 表明 HSF2蛋白可能调控 Hsp70-2基因的表达, 而且 HSF2可能通过多种方式影响精子的发生以及抑制生精细胞的凋亡。

P16蛋白和生精细胞凋亡对热压和11酸睾酮诱导的恒河猴无精子症和少精子症中的作用

探讨了P16蛋白和生精细胞凋亡在热压和11酸睾酮诱导恒河猴无精子症和少精子症中作用间的关系。3^末端标记分析(TUNEL)结果显示热应激和超生理剂量睾酮能够诱导生精细胞出现凋亡信号,它分别于处理后d5和d30达到最强。免疫组化结果显示,热压或TU主要诱导精原细胞和其它生精细胞以及Sertoli细胞P16的表达。P16蛋白的表达在生精细胞凋亡晚期,即隐睾手术d10或注射TUd60后迅速升高并维持高表达,该蛋白在生精细胞凋亡晚期可能通过抑制精原细胞的有丝分裂,扰乱正常的精子发生。

异育银鲫对鱼粉等11种饲料中磷的利用率

于1988年,以三氧化二铬间接指示法,在水温22±2℃条件下,测定了平均体重为55±5g/尾的异育银鲫对鱼粉、肉骨粉、芝麻饼、虾粉、骨粉、菜籽饼、玉米粉、脱氟磷酸氢钙、磷酸二氢钙、磷酸氢钙、磷酸钙的表观消化吸收率。结果表明:异育银鲫对第一、第二、第三磷酸钙的消化吸收率是不同的,分别为81％,65％和32％,此顺序与其溶解性由大到小的顺序一致;在所测试的八种商品饲料中,对骨粉、虾粉和菜籽饼中磷的表观消化吸收率较高,分别为65％,68％和65％;对鱼粉、芝麻饼、肉骨粉三种原料中磷的表观消化吸收率较低,分别是1

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition

Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02) Al2O3 substrate by metalorganic chemical-vapor deposition are reported. Several emission lines not reported before are observed at low temperature. The sharp peak at 3.359 eV is attributed to the exciton bound to the neutral acceptor. Another peak at 3.310 eV represents a free-to-bound, probably a free electron-to-acceptor, transition. The 3.241 and 3.170 eV lines are interpreted as phonon replica lines of the 3.310 eV line. The phonon energy is 70 meV, consistent with the energy of transverse optical E-1 phonon. The optical properties of the lines are analyzed. (C) 2003 American Institute of Physics.