Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

We have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "S-shaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and AlGaN in the literature.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells

Cyclotron resonance in CdTe/CdMgTe quantum wells (QWs) was studied. Due to the polaron effect the zero-field effective mass is strongly influenced by the QW width. The experimental data have been described theoretically by taking into account electron-phonon coupling and the nonparabolicity of the conduction band. The subband structure was calculated self-consistently. The best fit was obtained for an electron-phonon coupling constant alpha = 0.3 and bare electron mass of m(b) = 0.092m(0).

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.

Small-scale turbulent fluctuations beyond Taylor's frozen-flow hypothesis

The space-time cross-correlation function C-T(r, tau) of local temperature fluctuations in turbulent Rayleigh-Benard convection is obtained from simultaneous two-point time series measurements. The obtained C-T(r, tau) is found to have the scaling form C-T(r(E), 0) with r(E)=[(r-U tau)(2)+ V-2 tau(2)](1/2), where U and V are two characteristic velocities associated with the mean and rms velocities of the flow. The experiment verifies the theory and demonstrates its applications to a class of turbulent flows in which the requirement of Taylor's frozen flow hypothesis is not met.

Kondo Effect in Carbon Nanotube Quantum Dots with Spin-Orbit Coupling

Motivated by recent experimental observation of spin-orbit coupling in carbon nanotube quantum dots [F. Kuemmeth , Nature (London) 452, 448 (2008)], we investigate in detail its influence on the Kondo effect. The spin-orbit coupling intrinsically lifts out the fourfold degeneracy of a single electron in the dot, thereby breaking the SU(4) symmetry and splitting the Kondo resonance even at zero magnetic field. When the field is applied, the Kondo resonance further splits and exhibits fine multipeak structures resulting from the interplay of spin-orbit coupling and the Zeeman effect. A microscopic cotunneling process for each peak can be uniquely identified. Finally, a purely orbital Kondo effect in the two-electron regime is also predicted.

Large Decrease of Fluctuations for Supercooled Water in Hydrophobic Nanoconfinement

Using Monte Carlo simulations we study a coarse­grained model of a water layer confined in a fixed disordered matrix of hydrophobic nanoparticles at different particle concentrations c. For c = 0 we find a 1st order liquid­liquid phase transition (LLPT) ending in one critical point at low pressure P. For c > 0 our simulations are consistent with a LLPT line ending in two critical points at low and high pressure. For c = 25% at high P and low temperature T we find a dramatic decrease of compressibility, thermal expansion coefficient, and specific heat. Surprisingly, the effect is present also for c as low as 2.4%. We conclude that even a small presence of nanoscopic hydrophobes can drastically suppress thermodynamic fluctuations, making the detection of the LLPT more difficult.

Determining Acceptance Possibility for a Quantum Computation is Hard for PH

It is shown that determining whether a quantum computation has a non-zero probability of accepting is at least as hard as the polynomial time hierarchy. This hardness result also applies to determining in general whether a given quantum basis state appears with nonzero amplitude in a superposition, or whether a given quantum bit has positive expectation value at the end of a quantum computation.

Determining Acceptance Possibility for a Quantum Computation is Hard for the Polynomial Hierarchy

It is shown that determining whether a quantum computation has a non-zero probability of accepting is at least as hard as the polynomial time hierarchy. This hardness result also applies to determining in general whether a given quantum basis state appears with nonzero amplitude in a superposition, or whether a given quantum bit has positive expectation value at the end of a quantum computation. This result is achieved by showing that the complexity class NQP of Adleman, Demarrais, and Huang, a quantum analog of NP, is equal to the counting class coC=P.

Experimental study of quantum dot and dash lasers

Quantum dashes are elongated quantum dots. Polarized edge-photovoltage and spontaneous emission spectroscopy are used to study the anisotropy of optical properties in 1.5μm InGaAsP and AlGaInAs-based quantum dash lasers. Strain, which causes TM-polarized transitions to be suppressed at the band edge, coupled with carrier confinement and dash shape leads to an enhancement of the optical properties for light polarized along the dash long axis, in excellent agreement with theoretical results. An analysis of the integrated facet and spontaneous emission rate with total current and temperature reveals that, in both undoped and p-doped InGaAsP-based quantum dash lasers at room temperature, the threshold current and its temperature dependence remain dominated by Auger recombination. We also identify two processes which can limit the output power and propose that the effects of the dopant in p-doped InGaAsP-based lasers dominate at low temperature but decrease with increasing temperature. A high threshold current density in undoped AlGaInAs-based quantum dash laser samples studied, which degrade rapidly at low temperature, is not due to intrinsic carrier recombination processes. 1.3μm GaAs-based quantum dots lasers have been widely studied, but there remains issues as to the nature of the electronic structure. Polarized edge-photovoltage spectroscopy is used to investigate the energy distribution and nature of the energy states in InAs/GaAs quantum dot material. A non-negligible TM-polarized transition, which is often neglected in calculations and analyses, is measured close to the main TE-polarized ground state transition. Theory is in very good agreement with the experimental results and indicates that the measured low-energy TM-polarized transition is due to the strong spatial overlap between the ground state electron and the light-hole component of a low-lying excited hole state. Further calculations suggest that the TM-polarized transition reduces at the band edge as the quantum dot aspect ratio decreases.

Theory of elasticity and electric polarization effects in the group-III nitrides

In this work, the properties of strained tetrahedrally bonded materials are explored theoretically, with special focus on group-III nitrides. In order to do so, a multiscale approach is taken: accurate quantitative calculations of material properties are carried out in a quantum first-principles frame, for small systems. These properties are then extrapolated and empirical methods are employed to make predictions for larger systems, such as alloys or nanostructures. We focus our attention on elasticity and electric polarization in semiconductors. These quantities serve as input for the calculation of the optoelectronic properties of these systems. Regarding the methods employed, our first-principles calculations use highly- accurate density functional theory (DFT) within both standard Kohn-Sham and generalized (hybrid functional) Kohn-Sham approaches. We have developed our own empirical methods, including valence force field (VFF) and a point-dipole model for the calculation of local polarization and local polarization potential. Our local polarization model gives insight for the first time to local fluctuations of the electric polarization at an atomistic level. At the continuum level, we have studied composition-engineering optimization of nitride nanostructures for built-in electrostatic field reduction, and have developed a highly efficient hybrid analytical-numerical staggered-grid computational implementation of continuum elasticity theory, that is used to treat larger systems, such as quantum dots.

Conductance of quantum impurity models from quantum monte carlo

The conductance of two Anderson impurity models, one with twofold and another with fourfold degeneracy, representing two types of quantum dots, is calculated using a world-line quantum Monte Carlo (QMC) method. Extrapolation of the imaginary time QMC data to zero frequency yields the linear conductance, which is then compared to numerical renormalization-group results in order to assess its accuracy. We find that the method gives excellent results at low temperature (T TK) throughout the mixed-valence and Kondo regimes but it is unreliable for higher temperature. © 2010 The American Physical Society.

Gazing at Ground Zero: Tourism, Voyeurism and Spectacle

This essay uses the temporary viewing platform at the site of the former World Trade Center to explore our fascination with violence, conflict and disaster. It illustrates how discourses of voyeurism and authenticity promote a desire for sites of horror, and examines how that desire both disrupts and reinforces our prevailing interpretations of global politics. The viewing platform at Ground Zero was initially constructed to manage the thousands of people who traveled to New York in response to the shocking media images of 11 September. However, their desire to escape mediation and touch "the real" had the opposite effect - it transformed Ground Zero into a tourist attraction. Using Ground Zero as a starting point, this essay theorizes discourses of voyeurism and authenticity through the work of Baudrillard, Debord and Bauman in an effort to position the tourist as a significant political subject.

Quantum homogenization for continuous variables: Realization with linear optical elements

Recently Ziman et al. [Phys. Rev. A 65, 042105 (2002)] have introduced a concept of a universal quantum homogenizer which is a quantum machine that takes as input a given (system) qubit initially in an arbitrary state rho and a set of N reservoir qubits initially prepared in the state xi. The homogenizer realizes, in the limit sense, the transformation such that at the output each qubit is in an arbitrarily small neighborhood of the state xi irrespective of the initial states of the system and the reservoir qubits. In this paper we generalize the concept of quantum homogenization for qudits, that is, for d-dimensional quantum systems. We prove that the partial-swap operation induces a contractive map with the fixed point which is the original state of the reservoir. We propose an optical realization of the quantum homogenization for Gaussian states. We prove that an incoming state of a photon field is homogenized in an array of beam splitters. Using Simon's criterion, we study entanglement between outgoing beams from beam splitters. We derive an inseparability condition for a pair of output beams as a function of the degree of squeezing in input beams.

Determining the electronic structure and chemical potentials of molecules in solution

A simulation scheme is proposed for determining the excess chemical potential of a substance in solution. First, a Monte Carlo simulation is performed with classical models for solute and solvent molecules. A representative sample of these configurations is then used in a hybrid quantum/classical (QM/MM) calculation, where the solute is treated quantum-mechanically, and the average electronic structure is used to construct an improved classical model. This procedure is iterated to self-consistency in the classical model, which in practice is attained in one or two steps, depending on the quality of the initial guess. The excess free energy of the molecule within the QM/MM approach is determined relative to the classical model using thermodynamic perturbation theory with a cumulant expansion. The procedure provides a method of constructing classical point charge models appropriate for the solution and gives a measure of the importance of solvent fluctuations.