Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst

We report on the growth of single-walled carbon nanotubes from a monometallic Co catalyst on an oxidized Si wafer support by the most simple growth recipe (vacuum annealing, growth by undiluted C 2H 2). Nevertheless, multiwavelength Raman spectroscopy and transmission electron spectroscopy show a remarkable selectivity for chiral indices and thus, e.g., high abundance with a single chirality representing 58% of all semiconducting tubes. In situ x-ray photoelectron spectroscopy monitors the catalyst chemistry during carbon nanotube growth and shows interfacial Co-Si interactions that may help to stabilize the nanoparticle/nanotube diameter. We outline a two-mechanism model explaining the selective growth. © 2012 American Physical Society.

Growth of large sized y Ba 2Cu 3O 7 single crystals using the top seeded melt growth process

Neutron scattering experiments are fundamental to the study of magnetic order and related phenomena in a range of superconducting and magnetic materials. Traditional methods of crystal growth, however, do not yield single crystals of sufficient size for practical neutron scattering measurements. In this paper, we demonstrate the growth of relatively pure, large Y Ba 2Cu 3O 7 single crystals up to 30mm in diameter using a top seeded melt growth process. The characterization of the microstructural and magnetic properties of these crystals indicates that they contain <2% of impurity phases and, hence, exhibit only weak flux pinning behaviour. © 2012 IOP Publishing Ltd.

Identification of Materials from Construction Site Images Using Content Based Image Retrieval Techniques

The capability to automatically identify shapes, objects and materials from the image content through direct and indirect methodologies has enabled the development of several civil engineering related applications that assist in the design, construction and maintenance of construction projects. Examples include surface cracks detection, assessment of fire-damaged mortar, fatigue evaluation of asphalt mixes, aggregate shape measurements, velocimentry, vehicles detection, pore size distribution in geotextiles, damage detection and others. This capability is a product of the technological breakthroughs in the area of Image and Video Processing that has allowed for the development of a large number of digital imaging applications in all industries ranging from the well established medical diagnostic tools (magnetic resonance imaging, spectroscopy and nuclear medical imaging) to image searching mechanisms (image matching, content based image retrieval). Content based image retrieval techniques can also assist in the automated recognition of materials in construction site images and thus enable the development of reliable methods for image classification and retrieval. The amount of original imaging information produced yearly in the construction industry during the last decade has experienced a tremendous growth. Digital cameras and image databases are gradually replacing traditional photography while owners demand complete site photograph logs and engineers store thousands of images for each project to use in a number of construction management tasks. However, construction companies tend to store images without following any standardized indexing protocols, thus making the manual searching and retrieval a tedious and time-consuming effort. Alternatively, material and object identification techniques can be used for the development of automated, content based, construction site image retrieval methodology. These methods can utilize automatic material or object based indexing to remove the user from the time-consuming and tedious manual classification process. In this paper, a novel material identification methodology is presented. This method utilizes content based image retrieval concepts to match known material samples with material clusters within the image content. The results demonstrate the suitability of this methodology for construction site image retrieval purposes and reveal the capability of existing image processing technologies to accurately identify a wealth of materials from construction site images.

Growth and shape control of disks by bending and extension

Differential growth of thin elastic bodies furnishes a surprisingly simple explanation of the complex and intriguing shapes of many biological systems, such as plant leaves and organs. Similarly, inelastic strains induced by thermal effects or active materials in layered plates are extensively used to control the curvature of thin engineering structures. Such behaviour inspires us to distinguish and to compare two possible modes of differential growth not normally compared to each other, in order to reveal the full range of out-of-plane shapes of an initially flat disk. The first growth mode, frequently employed by engineers, is characterised by direct bending strains through the thickness, and the second mode, mainly apparent in biological systems, is driven by extensional strains of the middle surface. When each mode is considered separately, it is shown that buckling is common to both modes, leading to bistable shapes: growth from bending strains results in a double-curvature limit at buckling, followed by almost developable deformation in which the Gaussian curvature at buckling is conserved; during extensional growth, out-of-plane distortions occur only when the buckling condition is reached, and the Gaussian curvature continues to increase. When both growth modes are present, it is shown that, generally, larger displacements are obtained under in-plane growth when the disk is relatively thick and growth strains are small, and vice versa. It is also shown that shapes can be mono-, bi-, tri- or neutrally stable, depending on the growth strain levels and the material properties: furthermore, it is shown that certain combinations of growth modes result in a free, or natural, response in which the doubly curved shape of disk exactly matches the imposed strains. Such diverse behaviour, in general, may help to realise more effective actuation schemes for engineering structures. © 2012 Elsevier Ltd. All rights reserved.

Nucleation, growth, and control of ferroelectric-ferroelastic domains in thin polycrystalline films

The unique response of ferroic materials to external excitations facilitates them for diverse technologies, such as nonvolatile memory devices. The primary driving force behind this response is encoded in domain switching. In bulk ferroics, domains switch in a two-step process: nucleation and growth. For ferroelectrics, this can be explained by the Kolmogorov-Avrami-Ishibashi (KAI) model. Nevertheless, it is unclear whether domains remain correlated in finite geometries, as required by the KAI model. Moreover, although ferroelastic domains exist in many ferroelectrics, experimental limitations have hindered the study of their switching mechanisms. This uncertainty limits our understanding of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from reaching their full technological potential. Here we used piezoresponse force microscopy to study the switching mechanisms of ferroelectric-ferroelastic domains in thin polycrystalline Pb 0.7Zr0.3TiO3 films at the nanometer scale. We have found that switched biferroic domains can nucleate at multiple sites with a coherence length that may span several grains, and that nucleators merge to form mesoscale domains, in a manner consistent with that expected from the KAI model. © 2012 American Physical Society.

The phase of iron catalyst nanoparticles during carbon nanotube growth

We study the Fe-catalyzed chemical vapor deposition of carbon nanotubes by complementary in situ grazing-incidence X-ray diffraction, in situ X-ray reflectivity, and environmental transmission electron microscopy. We find that typical oxide supported Fe catalyst films form widely varying mixtures of bcc and fcc phased Fe nanoparticles upon reduction, which we ascribe to variations in minor commonly present carbon contamination levels. Depending on the as-formed phase composition, different growth modes occur upon hydrocarbon exposure: For γ-rich Fe nanoparticle distributions, metallic Fe is the active catalyst phase, implying that carbide formation is not a prerequisite for nanotube growth. For α-rich catalyst mixtures, Fe3C formation more readily occurs and constitutes part of the nanotube growth process. We propose that this behavior can be rationalized in terms of kinetically accessible pathways, which we discuss in the context of the bulk iron-carbon phase diagram with the inclusion of phase equilibrium lines for metastable Fe3C. Our results indicate that kinetic effects dominate the complex catalyst phase evolution during realistic CNT growth recipes. © 2012 American Chemical Society.

Chemical nano-gardens: growth of salt nanowires from supramolecular self-assembly gels.

In this article, we examine the phenomenon of single-crystal halide salt wire growth at the surface of porous materials. We report the use of a single-step casting technique with a supramolecular self-assembly gel matrix that upon drying leads to the growth of single-crystal halide (e.g., NaCl, KCl, and KI) nanowires with diameters ~130-200 nm. We demonstrate their formation using electron microscopy and electron-dispersive X-ray spectroscopy, showing that the supramolecular gel stabilizes the growth of these wires by facilitating a diffusion-driven base growth mechanism. Critically, we show that standard non-supramolecular gels are unable to facilitate nanowire growth. We further show that these nanowires can be grown by seeding, forming nanocrystal gardens. This study helps understand the possible prefunctionalization of membranes to stimulate ion-specific filters or salt efflorescence suppressors, while also providing a novel route to nanomaterial growth.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.

High purity GaAs nanowires free of planar defects: Growth and characterization

We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth

To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth durations on GaAs nanowires using Au nanoparticles. Through transmission electron microscopy, we have observed the following evolution steps for the InAs growth. (1) In the initial stages of the InAs growth, InAs clusters into a wedge shape preferentially at an edge of the Au/GaAs interface by minimizing Au/InAs interfacial area; (2) with further growth of InAs, the Au particle moves sidewards and then downwards by preserving an interface with GaAs nanowire sidewalls. The lower interfacial energy of Au/GaAs than that of Au/In As is attributed to be the reason for such Au movement. This downward movement of the Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and with further supply of In and As vapor reactants, the Au nanoparticle assists the formation of InAs branches. These observations give some insights into vapor-liquid-solid growth and the formation of kinks in nanowire heterostructures. © 2008 Materials Research Society.

Growth behavior of epitaxial semiconductor axial nanowire heterostructures

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires. © 2008 IEEE.