Filter Optimization for Grid Interactive Voltage Source Inverters

Higher order LCL filters are essential in meeting the interconnection standard requirement for grid-connected voltage source converters. LCL filters offer better harmonic attenuation and better efficiency at a smaller size when compared to the traditional L filters. The focus of this paper is to analyze the LCL filter design procedure from the point of view of power loss and efficiency. The IEEE 1547-2008 specifications for high-frequency current ripple are used as a major constraint early in the design to ensure that all subsequent optimizations are still compliant with the standards. Power loss in each individual filter component is calculated on a per-phase basis. The total inductance per unit of the LCL filter is varied, and LCL parameter values which give the highest efficiency while simultaneously meeting the stringent standard requirements are identified. The power loss and harmonic output spectrum of the grid-connected LCL filter is experimentally verified, and measurements confirm the predicted trends.

A homotopy approach for stabilizing single-input systems with control structure constraints

A linear state feedback gain vector used in the control of a single input dynamical system may be constrained because of the way feedback is realized. Some examples of feedback realizations which impose constraints on the gain vector are: static output feedback, constant gain feedback for several operating points of a system, and two-controller feedback. We consider a general class of problems of stabilization of single input dynamical systems with such structural constraints and give a numerical method to solve them. Each of these problems is cast into a problem of solving a system of equalities and inequalities. In this formulation, the coefficients of the quadratic and linear factors of the closed-loop characteristic polynomial are the variables. To solve the system of equalities and inequalities, a continuous realization of the gradient projection method and a barrier method are used under the homotopy framework. Our method is illustrated with an example for each class of control structure constraint.

Field-dependent changeover from current-to voltage-limiting characteristics by non-linear n-type BaTiO3 ceramics

Non-linear resistors having current-limiting capabilities at lower field strengths, and voltage-limiting characteristics (varistors) at higher field strengths, were prepared from sintered polycrystalline ceramics of (Ba0.6Sr0.4)(Ti0.97Zr0.03)O3+0.3 at % La, and reannealed after painting with low-melting mixtures of Bi2O3 + PbO +B2O3. These types of non-linear characteristics were found to depend upon the non-uniform diffusion of lead and the consequent distribution of Curie points (T c) in these perovskites, resulting in diffuse phase transitions. Tunnelling of electrons across the asymmetric barrier at tetragonak-cubic interfaces changes to tunnelling across the symmetric barrier as the cubic phase is fully stabilized through Joule heating at high field strengths. Therefore the current-limiting characteristics switch over to voltage-limiting behaviour because tunnelling to acceptor-type mid-bandgap states gives way to band-to-band tunnelling.

Enhancement of Surface Flashover Performance of High Voltage Ceramic Disc Insulators

In this paper, an effort is made to study accurately the field distribution for various types of ceramic insulators used for high-voltage transmission. The surface charge simulation method (SCSM) is employed for the field computation. With the help of SCSM program, a Novel field reduction electrode is designed and developed to reduce the maximum field around the pin region. In order to experimentally analyze the performance of discs with field reduction electrode, special artificial pollution test facility was built and utilized. The experimental results show better surface flashover performance of ceramic insulators used in high-voltage transmission and distribution systems.

Adaptive Keeper Design for Dynamic Logic Circuits Using Rate Sensing Technique

The increasing variability in device leakage has made the design of keepers for wide OR structures a challenging task. The conventional feedback keepers (CONV) can no longer improve the performance of wide dynamic gates for the future technologies. In this paper, we propose an adaptive keeper technique called rate sensing keeper (RSK) that enables faster switching and tracks the variation across different process corners. It can switch upto 1.9x faster (for 20 legs) than CONV and can scale upto 32 legs as against 20 legs for CONV in a 130-nm 1.2-V process. The delay tracking is within 8% across the different process corners. We demonstrate the circuit operation of RSK using a 32 x 8 register file implemented in an industrial 130-nm 1.2-V CMOS process. The performance of individual dynamic logic gates are also evaluated on chip for various keeper techniques. We show that the RSK technique gives superior performance compared to the other alternatives such as Conditional Keeper (CKP) and current mirror-based keeper (LCR).

V-CE Sensing for IGBT Protection in NPC Three Level Converters-Causes For Spurious Trippings and Their Elimination

Neutral point clamped (NPC), three level converters with insulated gate bipolar transistor devices are very popular in medium voltage, high power applications. DC bus short circuit protection is usually done, using the sensed voltage across collector and emitter (i.e., V-CE sensing), of all the devices in a leg. This feature is accommodated with the conventional gate drive circuits used in the two level converters. The similar gate drive circuit, when adopted for NPC three level converter protection, leads to false V-CE fault signals for inner devices of the leg. The paper explains the detailed circuit behavior and reasons, which result in the occurrence of such false V-CE fault signals. This paper also illustrates that such a phenomenon shows dependence on the power factor of the supplied three-phase load. Finally, experimental results are presented to support the analysis. It is shown that the problem can be avoided by blocking out the V-CE sense fault signals of the inner devices of the leg.

Study of voltage collapse at converter bus in asynchronous MTDC-AC systems

This paper presents the analysis and study of voltage collapse at any converter bus in an AC system interconnected by multiterminal DC (MTDC) links. The analysis is based on the use of the voltage sensitivity factor (VSF) as a voltage collapse proximity indicator (VCPI). In this paper the VSF is defined as a matrix which is applicable to MTDC systems. The VSF matrix is derived from the basic steady state equations of the converter, control, DC and AC networks. The structure of the matrix enables the derivation of some of the basic properties which are generally applicable. A detailed case study of a four-terminal MTDC system is presented to illustrate the effects of control strategies at the voltage setting terminal (VST) and other terminals. The controls considered are either constant angle, DC voltage, AC voltage, reactive current and reactive power at the VST and constant power or current at the other terminals. The effect of the strength of the AC system (measured by short circuit ratio) on the VSF is investigated. Several interesting and new results are presented. An analytical expression for the self VSF at VST is also derived for some specific cases which help to explain the number of transitions in VSF around the critical values of SCR.

Numerical Electromagnetic Analysis of Current and Voltage Distribution along Down Conductors and Towers Hit by Direct Lightning

In order to answer the practically important question of whether the down conductors of lightning protection systems to tall towers and buildings can be electrically isolated from the structure itself, this work is conducted. As a first step in this regard, it is presumed that the down conductor placed on metallic tower will be a pessimistic representation of the actual problem. This opinion was based on the fact that the proximity of heavy metallic structure will have a large damping effect. The post-stroke current distributions along the down conductors and towers, which can be quite different from that in the lightning channel, govern the post-stroke near field and the resulting gradient in the soil. Also, for a reliable estimation of the actual stroke current from the measured down conductor currents, it is essential to know the current distribution characteristics along the down conductors. In view of these, the present work attempts to deduce the post-stroke current and voltage distribution along typical down conductors and towers. A solution of the governing field equations on an electromagnetic model of the system is sought for the investigation. Simulation results providing the spatio-temporal distribution of the post-stroke current and voltage has provided very interesting results. It is concluded that it is almost impossible to achieve electrical isolation between the structure and the down conductor. Furthermore, there will be significant induction into the steel matrix of the supporting structure.

18-Bit binary inductive voltage divider for self balancing ac bridge applications

The constructional details of an 18-bit binary inductive voltage divider (IVD) for a.c. bridge applications is described. Simplified construction with less number of windings, interconnection of winding through SPDT solid state relays instead of DPDT relays, improves reliability of IVD. High accuracy for most precision measurement achieved without D/A converters. The checks for self consistency in voltage division shows that the error is less than 2 counts in 2(18).

Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Stabilizing trench's algorithm to invert symmetric toeplitz matrices

Presented here is a stable algorithm that uses Zohar's formulation of Trench's algorithm and computes the inverse of a symmetric Toeplitz matrix including those with vanishing or nearvanishing leading minors. The algorithm is based on a diagonal modification of the matrix, and exploits symmetry and persymmetry properties of the inverse matrix.

Variation of surface flashover voltage in SF6 with pressure

Surface flashover characteristics of solid spacers in a rod-plane configuration have been investigated in SF6, at pressures to 400 kPa, for switching impulse voltages to determine the effect of spacer, spacer materials and polarity of applied impulses. The effect of spacer material on the flashover voltage is not significant. For negative polarity impulses, the influence of the spacer is also insignificant. But for positive polarity impulses, at pressures < 200 kPa, the spacer efficiency becomes > 1.0. On the other hand, at pressures > 200 kPa, the presence of spacer drastically reduces the flashover voltage of the system. At about atmospheric pressure also, the spacer efficiency in air has been found to be > 1.0, with the same electrode geometry.

Dynamic analysis of voltage instability in AC-DC systems

This paper presents the analysis and study of voltage collapse at any converter bus in A C-DC systems considering the dynamics of DC system. The problem of voltage instability is acute when HVDC links are connected to weak AC systems, the strength determined by short circuit ratio (SCR) at the converter bus. The converter control strategies are important in determining voltage instability. Small signal analysis is used to identify critical modes and evaluate the effect of AC system strength and control parameters. A sample two-terminal DC system is studied and the results compared with those obtained from static analysis. Also, the results obtained from small signal analysis are validated with nonlinear simulation.

Analysis, Design, Modeling, and Implementation of an Active Clamp HF Link Converter

This paper deals with the system oriented analysis, design, modeling, and implementation of active clamp HF link three phase converter. The main advantage of the topology is reduced size, weight, and cost of the isolation transformer. However, violation of basic power conversion rules due to presence of the leakage inductance in the HF transformer causes over voltage stresses across the cycloconverter devices. It makes use of the snubber circuit necessary in such topologies. The conventional RCD snubbers are dissipative in nature and hence inefficient. The efficiency of the system is greatly improved by using regenerative snubber or active clamp circuit. It consists of an active switching device with an anti-parallel diode and one capacitor to absorb the energy stored in the leakage inductance of the isolation transformer and to regenerate the same without affecting circuit performance. The turn on instant and duration of the active device are selected such that it requires simple commutation requirements. The time domain expressions for circuit dynamics, design criteria of the snubber capacitor with two conflicting constrains (over voltage stress across the devices and the resonating current duration), the simulation results based on generalized circuit model and the experimental results based on laboratory prototype are presented.

Magnetically tunable nonlinear current-voltage characteristics in oxygen deficient manganite perovskites

(La0.667Ca0.333Mn1-xMO3-delta)-O-x (M = Mg, Li or Re) exhibit insulating behaviour and nonlinear current-voltage (J-E) relationship with voltage-limiting characteristics at temperatures below the ferromagnetic transition (T-c). The high current region is set in at field strengths <60 V/cm. Nonlinearity exponent, alpha in the relation J = kE(alpha) increases inversely with temperature. In presence of an external magnetic field, the J-E curves show higher current density at lower field strengths. Microstructural studies indicate that there is no segregation of secondary phases in the grain boundary regions. There is remarkable changes in p(T) as well as J-E curves with the grain size. Annealing studies in lower p(O2) atmospheres indicate that there is significant out-diffusion of oxygen ions through the grain boundary layer (GBL) regions creating oxygen vacancies in the GBL regions. The concentration of Mn4+ ions is lowered at the GBL due to oxygen vacancies, reducing the probability of hopping and resulting in insulating behaviour. Therefore an insulating barrier is introduced between two conducting grains and the carrier motion between the grains is inhibited. Thus below T-c, where sufficient increase in resistivity is observed the conduction may be arising as a result of spin dependent tunneling across the barrier. External electric field lowers the barrier height and establishes carrier transport across the barrier. Above certain field strength, barrier height diminishes significantly and thereby allowing large number of carriers for conduction, giving rise to highly nonlinear conductivity. (C) 2002 Elsevier Science B.V. All rights reserved.