988 resultados para Union Carbide do Brasil
Resumo:
Parte 1 - Leis
Resumo:
The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
Resumo:
Parte 1 - Leis
Resumo:
Parte 1 - Leis.
Resumo:
Parte 1 - Leis
Resumo:
Parte 1 - Leis
Resumo:
Parte 1 - Leis
Resumo:
Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.
Resumo:
Parte 1 - Leis
Resumo:
Parte 1 - Atos do Poder Legislativo
Resumo:
Parte 1 - Decisões
Resumo:
Parte 1 - Atos do Poder Legislativo
Resumo:
Parte 1 - Atos do Poder Legislativo
Resumo:
Parte 1 - Atos do Poder Legislativo
Resumo:
Parte 1 - Atos do Poder Legislativo