Rapid δ18O and δ13C isotopic shifts in late Pleistocene marine varves on the California margin

Upper Pleistocene sediments on the continental slope off Northern California contain alternations of varves and bioturbation produced by fluctuations in intensity of the coastal upwelling system. Stable isotopic analyses of benthic Foraminifera across a particularly well developed varve/bioturbation sequence deposited ~26,000 years ago reveal rapid shifts of ~0.25‰ in δ18O and ~0.4‰ in δ13C. The δ18O shift occurs within a varved section. Based on varve counts, the isotopic change occurred in less than 100 years. Timing and magnitude of the shift coincide with similar shifts observed in almost all other high-resolution δ18O records that have been interpreted as primarily representing global in-volume fluctuations.

Rapid teleconnections associated with individual tropical cyclones

Several studies have shown that tropical heating variations at intraseasonal to interannual time scales may be associated with global climate anomalies. During the past decade, relatively high frequency (daily to weekly) variations in tropical convective activity have also been found to produce significant midlatitude responses within days to weeks. In this study, we investigate the processes by which individual tropical cyclones affect midlatitude weather and climate.

A rapid procedure for the approximation of bacterial load in fishery products

The production of colour by homogenised fish material in a simplified sugar medium containing and acid indicator has been made use of for the rapid approximation of bacterial load in such products. The medium thus developed contains poptone, tryptone, yeast extract, sodium chloride and beef extract besides dextrose. The time of colour production is influenced to some extent by the level of sodium chloride in the medium and is almost always inversely proportional to the bacterial load in the homogenate.

Factors influencing colour production from the sugar medium used for the rapid approximation of bacterial counts in fishery products

Results of the studies carried out to elucidate the factors influencing colour production from the sugar medium used for the rapid approximation of bacterial counts in fishery products are reported. The effect of particle size, trace elements, salt soluble protein and non-protein fractions, rate of multiplication of bacteria, in the medium, surface bacteria and the rate of colour production by individual strains of bacteria were studied. It is observed that the best results are obtained when a sea-water homogenate is used.

TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Performance of CMOS Devices in Silicon-on-Sapphire Films After Solid-Phase Epitaxial Growth With Rapid Electron-Beam Heating

The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE