A Nonstaining and Tasteless Hydrophobic Salt of Chlorhexidine

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Ondas de spin em quasi-cristais magnônicos

In this paper we investigate the spectra of band structures and transmittance in magnonic quasicrystals that exhibit the so-called deterministic disorders, specifically, magnetic multilayer systems, which are built obeying to the generalized Fibonacci (only golden mean (GM), silver mean (SM), bronze mean (BM), copper mean (CM) and nickel mean (NM) cases) and k-component Fibonacci substitutional sequences. The theoretical model is based on the Heisenberg Hamiltonian in the exchange regime, together with the powerful transfer matrix method, and taking into account the RPA approximation. The magnetic materials considered are simple cubic ferromagnets. Our main interest in this study is to investigate the effects of quasiperiodicity on the physical properties of the systems mentioned by analyzing the behavior of spin wave propagation through the dispersion and transmission spectra of these structures. Among of these results we detach: (i) the fragmentation of the bulk bands, which in the limit of high generations, become a Cantor set, and the presence of the mig-gap frequency in the spin waves transmission, for generalized Fibonacci sequence, and (ii) the strong dependence of the magnonic band gap with respect to the parameters k, which determines the amount of different magnetic materials are present in quasicrystal, and n, which is the generation number of the sequence k-component Fibonacci. In this last case, we have verified that the system presents a magnonic band gap, whose width and frequency region can be controlled by varying k and n. In the exchange regime, the spin waves propagate with frequency of the order of a few tens of terahertz (THz). Therefore, from a experimental and technological point of view, the magnonic quasicrystals can be used as carriers or processors of informations, and the magnon (the quantum spin wave) is responsible for this transport and processing

Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3

The physical properties and the excitations spectrum in oxides and semiconductors materials are presented in this work, whose the first part presents a study on the confinement of optical phonons in artificial systems based on III-V nitrides, grown in periodic and quasiperiodic forms. The second part of this work describes the Ab initio calculations which were carried out to obtain the optoeletronic properties of Calcium Oxide (CaO) and Calcium Carbonate (CaCO3) crystals. For periodic and quasi-periodic superlattices, we present some dynamical properties related to confined optical phonons (bulk and surface), obtained through simple theories, such as the dielectric continuous model, and using techniques such as the transfer-matrix method. The localization character of confined optical phonon modes, the magnitude of the bands in the spectrum and the power laws of these structures are presented as functions of the generation number of sequence. The ab initio calculations have been carried out using the CASTEP software (Cambridge Total Sequential Energy Package), and they were based on ultrasoft-like pseudopotentials and Density Functional Theory (DFT). Two di®erent geometry optimizations have been e®ectuated for CaO crystals and CaCO3 polymorphs, according to LDA (local density approximation) and GGA (generalized gradient approximation) approaches, determining several properties, e. g. lattice parameters, bond length, electrons density, energy band structures, electrons density of states, e®ective masses and optical properties, such as dielectric constant, absorption, re°ectivity, conductivity and refractive index. Those results were employed to investigate the confinement of excitons in spherical Si@CaCO3 and CaCO3@SiO2 quantum dots and in calcium carbonate nanoparticles, and were also employed in investigations of the photoluminescence spectra of CaCO3 crystal

Crystallographic studies of fish hemoglobins

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Positronium-hydrogen atom elastic scattering at medium energies

We study the elastic scattering of positronium atoms by hydrogen atoms at medium energies using partial-wave Born-Oppenheimer (BO) exchange amplitudes and report accurate BO cross sections in the energy range 0 to 60 eV. The present BO results agree with a 22-state R-matrix and a five-state coupled-channel model potential calculation, but disagree strongly with a conventional close-coupling calculation as well as its input BO amplitudes at medium energies.

Positronium scattering by atoms and molecules at low energies

The recent theoretical and experimental activities in positronium (Ps) scattering by atoms and molecules are reviewed with special emphasis at low energies. We critically compare the results of different groups - theoretical and experimental. The theoretical approaches considered include the R-matrix and close-coupling methods applied to Ps-H, Ps-He and Ps-Li scattering, and a coupled-channel approach with a nonlocal model potential for Ps scattering by H, He, H-2, Ne, Ar, Li, Na, K, Rb, Cs and Ps and for pickoff quenching in Ps-He scattering. Results for scattering lengths, partial. total and differential cross-sections as well as resonance and binding energies in different systems are discussed. (C) 2002 Elsevier B.V. B.V. All rights reserved.

O uso de wavelets na determinação do expoente de Hurst de uma série temporal diária de chuvas do município de Araras-SP de 1955-2000

Pós-graduação em Física - IGCE

Modelagem de dados MT 2D em multicamadas com anisotropia arbitrária

Neste trabalho apresentamos a modelagem direta bidimensional do método Magnetotelúrico (MT) com anisotropia arbitrária na condutividade elétrica para modelos de multicamadas estratificadas horizontalmente, separando a resposta do campo resultante em duas partes, primária e secundária. A parte primária refere-se ao campo 1D do modelo na ausência de heterogeneidades; a secundária, à contribuição no campo resultante gerada pela anomalia. Esta modelagem foi feita via técnica numérica dos Elementos Finitos (EF). Apresentamos também a modelagem direta do caso MT 1D para o mesmo modelo e anisotropia arbitrária, porém, com solução analítica pelo método da matriz de propagação; tal resultado é usado como fonte na formulação 2D. No estudo a respeito do comportamento dos campos 1D em profundidade na presença da anisotropia, verificamos nas componentes horizontais que suas curvas dentro de cada camada se assemelham a de um campo na presença de fontes, pois experimentam um aumento na amplitude; além de verificar o surgimento da componente normal E_z do campo, sem que haja uma densidade de corrente nesta direção. Com arbitrariedade na anisotropia queremos dizer que seus eixos principais podem assumir qualquer orientação em relação ao eixo de referência adotado para o problema; tal orientação é descrita sob três rotações consecutivas, chamadas de strike, dip e slant, que simulam inclinações bastante presentes na geologia dos ambientes terrestres. Verificamos que a anisotropia provoca alterações no comportamento das pseudo-seções de resistividades aparentes, interferindo na interpretação correta dos dados.

Estudo da influência da flexibilidade dos discos nas rotações críticas de rotores

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Indicador multivariado policórico: proposta de indicador para o diagnóstico da aprendizagem organizacional

Pós-graduação em Engenharia Mecânica - FEG

Controle ativo de vibrações em vigas utilizando controle feedforward e elementos espectrais

Pós-graduação em Engenharia Mecânica - FEB

Inspeção de materiais compósitos utilizando ondas acústicas guiadas

Pós-graduação em Engenharia Elétrica - FEIS

O modelo de Schrödinger não linear com um defeito integrável

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The Li-8(p, alpha)He-5 reaction at low energies, and Be-9 spectroscopy around the proton threshold

We present a direct measurement of the low-energy Li-8(p, alpha)He-5 cross section, using a radioactive Li-8 beam impinging on a thick target. With four beam energies, we cover the energy range between E-c.m. = 0.2 and 2.1 MeV. An R-matrix analysis of the data is performed and suggests the existence of two broad overlapping resonances (5/2(+) at E-c.m. = 1.69 MeV and 7/2(+) at E-c.m. = 1.76 MeV). At low energies our data are sensitive to the properties of a subthreshold state (E-x = 16.67 MeV) and of two resonances above threshold. These resonances were observed in previous experiments. The R-matrix fit confirms spin assignments, and provides partial widths. We propose a new Li-8(p, alpha)He-5 reaction rate and briefly discuss its influence in nuclear astrophysics. DOI: 10.1103/PhysRevC.86.064321

Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.