All-optical amplitude-based broadband modulation in submicron silicon waveguide

We demonstrate an on-chip all-optical broadband modulation of light in submicron silicon waveguide based on linear free carriers' absorption using side coupling configuration of a pump signal. © 2010 Optical Society of America.

100 Gb/s PAM4-CAP2 real-time modulation of a single optical source for next-generation datacommunication links

100 Gb/s PAM4-CAP2 modulation is demonstrated for next-generation datacommunication links. Simulation studies indicate a power budget advantage of 2.5 dBo relative to PAM8 modulation. A real-time experimental demonstration is performed. © OSA 2014.

APSK coded modulation schemes for nonlinear satellite channels with high power and spectral efficiency

A new class of 16-ary Amplitude Phase Shift Keying (APSK) coded modulations deemed double-ring PSK modulations best suited for (satellite) nonlinear channels is proposed. Constellation parameters optimization has been based on geometric and information-theoretic considerations. Furthermore, pre- and post-compensation techniques to reduce the nonlinearity impact have been examined. Digital timing clock and carrier phase have been derived and analyzed for a Turbo coded version of the same new modulation scheme. Finally, the performance of state-of the art Turbo coded modulation for this new 16-ary digital modulation has been investigated and compared to the known TCM schemes. It is shown that for the same coding scheme, double-ring APSK modulation outperforms classical 16-QAM and 16-PSK over a typical satellite nonlinear channel due to its intrinsic robustness against the High Power Amplifier (HPA) nonlinear characteristics. The new modulation is shown to be power- and spectrally-efficient, with interesting applications to satellite communications. © 2002 by the American Institute of Aeronautics and Astronautics, Inc.

Fiber Dispersion and Nonlinearity Influences on Transmissions of AM and FM Data Modulation Signals in Radio-Over-Fiber System

Transmission properties of data amplitude modulation (AM) and frequency modulation (FM) in radio-over-fiber (RoF) system are studied numerically. The influences of fiber dispersion and nonlinearity on different microwave modulation schemes, including double side band (DSB), single side band (SSB) and optical carrier suppression (OCS), are investigated and compared. The power penalties at the base station (BS) and the eye opening penalties of the recovered data at the end users are both calculated and analyzed. Numerical simulation results reveal that the power penalty of FM can be drastically decreased due to the larger modulation depth it can achieve than that of AM. The local spectrum broadening around subcarrier microwave frequency of AM due to fiber nonlinearity can also be eliminated with FM. It is demonstrated for the first time that the eye openings of the FM recovered data can be controlled by its modulation depths and the coding formats. Negative voltage encoding format was used to further decrease the RF frequency thus increase the fluctuation period considering their inverse relationship.

Enhanced modulation bandwidth of a Fabry-Perot semiconductor laser subject to light injection from another Fabry-Perot laser

Variations in optical spectrum and modulation band-width of a modulated Fabry-Perot (FP) semiconductor laser subject to the external light injection from another FP Laser is investigated in this paper. Optimal wavelength matching conditions for two FP lasers are discussed. A series of experiments show that two FP lasers should have a central wavelength overlapping and a mode spacing difference of several gigahertz. Under these conditions both the magnitude and phase frequency responses can be improved significantly.

Analysis of the additional modulation of semiconductor lasers using optical heterodyne techniques

In this letter, the power spectrum of a cooled distributed feedback laser module is measured using the self-heterodyne technique. Periodical oscillation peaks have been observed in the measurement. Further investigation shows that the additional modulation signal is coupled from the thermal electric cooler (TEC) controller to the laser driver, and then applied to the laser diode. The additional modulation can be eliminated by properly isolating the laser driving source from the TEC controller.

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth

The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. High speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 GHz.

Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers

We present the fabrication of 1.3 mu m waveband p-doped InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with an extremely simple process. The continuous-wave saturated output power of 1.1 mW with a lasing wavelength of 1280 nm is obtained at room temperature. The high-speed modulation characteristics of p-doped QD VCSELs of two different oxide aperture sizes are investigated and compared. The maximum 3 dB modulation bandwidth of 2.5 GHz can be achieved at a bias current of 7 mA for a p-doped QD VCSEL with an oxide aperture size of 10 mu m in the small signal frequency response measurements. The crucial factors for the 3 dB bandwidth limitation are discussed according to the parameters' extraction from frequency response.

Chirp-free optical modulation using a silicon push-pull coupling microring

We propose a silicon ring-based optical modulation method to perform chirp-free optical modulations. In this scheme, we locate the light to be modulated at the resonance of the ring and tune the coupling coefficient between the ring and the straight waveguide by using a push-pull coupling structure. The chirp-free phase modulation can be achieved by varying the coupling coefficient in a large range, which can modify the coupling condition of the ring such that the input light experiences an abrupt phase shift of pi at the output. If the coupling coefficient is adjusted in a small range such that the coupling condition of the ring is kept unchanged, only the intensity of the light will be modulated. This leads to chirp-free intensity modulation. Our simulations performed at 10 Gbits/s confirm the feasibility of the proposal. (C) 2009 Optical Society of America

Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping

1.5 mu m. n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm(2) for 1000 mu m long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm(2)/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5 mu m devices have been demonstrated.

Subtraction of scattering parameters for small-signal modulation characteristics of laser diode

An extended subtraction method of scattering parameters for characterizing laser diode is proposed in this paper. The intrinsic response is extracted from the measured transmission coefficients of laser diode, and the parasitics of packaging net-work laser chip are determined from the measured reflection coefficient of laser diode simultaneously. It is shown that the theories agree well with the experimental results.

Effect of interaction between periodic delta-doping in both well and barrier layers on modulation of superlattice band structure

The modulation of superlattice band structure via periodic delta-doping in both well and barrier layers have been theoretically investigated, and the importance of interaction between the delta-function potentials in the well layers and those in the barrier layers on SL band structure have been revealed. It is pointed out that the energy dispersion relation Eq. (3) given in [G. Ihm, S.K. Noh, J.I. Lee, J.-S. Hwang, T.W. Kim, Phys. Rev. B 44 (1991) 6266] is an incomplete one, as the interaction between periodic delta-doping in both well and barrier layers had been overlooked. Finally, we have shown numerically that the electron states of a GaAs/Ga0.7Al0.3As superlattice can be altered more efficiently by intelligent tuning the two delta-doping's positions and heights. (c) 2007 Elsevier B.V. All rights reserved.

Directional-coupler-based Mach-Zehnder interferometer in silicon-on-insulator technology for optical intensity modulation

Based on silicon-on-insulator (SOI) technology, a Mach-Zehnder interferometer (MZI) is fabricated, in which two directional couplers serve as power splitter and combiner. The free carrier plasma dispersion effect of Si is adopted to achieve the phase modulation and the consequent intensity modulation of optical fields. The device presents an insertion loss of 2.61 dB and an extinction ratio of 19.6 dB. The rise time and fall time are 676 ns and 552 ns, respectively. Detailed analysis and explanation of the performance behaviors are also presented. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Measurement of chirp parameter and modulation index of a semiconductor laser based on optical spectrum analysis

A novel and simple method for measuring the chirp parameter, frequency, and intensity modulation indexes of directly modulated lasers is proposed in a small-signal modulation scheme. A graphical approach is presented. An analytical solution to the measurement of low chirp parameters is also given. The measured results agree well with those obtained using the conventional methods.