Factors Resulting In Micron Indentation Hardness Descending In Indentation Tests

Some factors that affect the experimental results in nanoindentation tests such as the contact depth, contact area, load and loading duration are analyzed in this article. Combining with the results of finite element numerical simulation, we find that the creep property of the tested material is one of the important factors causing the micron indentation hardness descending with the increase of indentation depth. The analysis of experimental results with different indentation depths demonstrates that the hardness decrease can be bated if the continuous stiffness measurement technique is not adopted; this indicates that the test method itself may also be one of the factors causing the hardness being descended.

Third harmonic enhancement due to Fano interference in semiconductor quantum well

We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.