Pressure-induced electrical and structural anomalies in Pb1-xCaxTiO3 thin films grown at various oxygen pressures by chemical solution route

Lead calcium titanate (Pb1-xCaxTiO3 or PCT) thin films have been thermally treated under different oxygen pressures, 10, 40 and 80 bar, by using the so-called chemical solution deposition method. The structural, morphological, dielectric and ferroelectric properties were characterized by x-ray diffraction, FT-infrared and Raman spectroscopy, atomic force microscopy and polarization-electric-field hysteresis loop measurements. By annealing at a controlled pressure of around 10 and 40 bar, well-crystallized PCT thin films were successfully prepared. For the sample submitted to 80 bar, the x-ray diffraction, Fourier transformed-infrared and Raman data indicated deviation from the tetragonal symmetry. The most interesting feature in the Raman spectra is the occurrence of intense vibrational modes at frequencies of around 747 and 820 cm(-1), whose presence depends strongly on the amount of the pyrochlore phase. In addition, the Raman spectrum indicates the presence of symmetry-breaking disorder, which would be expected for an amorphous (disorder) and mixed pyrochlore-perovskite phase. During the high-pressure annealing process, the crystallinity and the grain size of the annealed film decreased. This process effectively suppressed both the dielectric and ferroelectric behaviour. Ferroelectric hysteresis loop measurements performed on these PCT films exhibited a clear decrease in the remanent polarization with increasing oxygen pressure.

Analysis of the E-J Curve of HTS Tapes Under DC and AC Magnetic Fields at 77 K

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Features of dielectric response in PMN-PT ferroelectric ceramics

In this paper, electrical and structural properties were reported for pyrochlore free (1-x)[Pb(Mg1/3Nb2/3)O-3] - xPbTiO(3) (PMN-PT) (with 35 mol% PbTiO3) ceramics obtained from fine powders. Dielectric studies were focused on the investigation of the complex dielectric permittivity (epsilon '-i epsilon '') as a function of frequency and temperature. The effects of the dc applied electric field on dielectric response were also investigated. Results revealed a field dependence dielectric anomaly in the dielectric permittivity curves (epsilon(T)) in the low dc electric field region, which in turn prevails in the whole analysed frequency interval. To the best of our knowledge, these properties for the PMN-PT ceramic system have not been reported before as in this work. The results were analysed within the framework of the current models found in the literature.

Phase transition and dielectric properties of La-doped Pb(Zr, Ti)O-3 antiferroelectric ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Mesoscopic structure evidenced by AC dielectric nonlinearities in Sr(0.75)Ba(0.25)Nb(2)O(6) relaxor ferroelectric thin films

The AC electric field and temperature dependences of the dielectric permittivity for strontium barium niobate (Sr(0.75)Ba(0.25)Nb(2)O(6)) relaxor ferroelectric thin films have been investigated. The results indicate the existence of a true mesoscopic structure evidenced by the nonlinear dielectric response of these films, which is similar to those observed for bulk relaxor ferroelectrics. A tendency for a temperature dependent crossover from a linear to a quadratic behaviour of the dielectric nonlinearity was observed, indicating an evolution from paraelectric to glass-like behaviour on cooling the samples towards the freezing temperature transition.

Domain wall contribution to dielectric and piezoelectric responses in 0.65Pb(Mg1/3Nb2/3)-0.35PbTiO(3) ferroelectric ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of nonlinear dielectric properties in Sr0.75Ba0.25Nb2O6 relaxor ferroelectric thin films

The ac and dc driving fields dependence of the dielectric permittivity for the strontium barium niobate relaxor ferroelectric thin films has been investigated. The nonlinear dielectric properties were obtained by using the measurements of the dielectric permittivity of the material as a function of the ac and dc "bias" electric field amplitude in wide frequency (100 Hz-10 MHz) and temperature (50-450 K) intervals. The results hint the existence of a true mesoscopic dielectric relaxor response in the ferroelectric thin film, which is very similar to those observed in bulk relaxor ferroelectrics. An anomalous behavior of the NL dielectric response was observed when submitted to moderate dc electric fields levels,,indicating a crossover from paraelectric to a glasslike behavior on cooling the sample toward the freezing transition. The obtained results were analyzed within the framework of the models proposed in the current literature.

Photopyroelectric response of PTCa/PEEK composite

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeito do campo elétrico em nanocones formados por aln e BN: um estudo por primeiros princípios

The development of computers and algorithms capable of making increasingly accurate and rapid calculations as well as the theoretic foundation provided by quantum mechanics has turned computer simulation into a valuable research tool. The importance of such a tool is due to its success in describing the physical and chemical properties of materials. One way of modifying the electronic properties of a given material is by applying an electric field. These effects are interesting in nanocones because their stability and geometric structure make them promising candidates for electron emission devices. In our study we calculated the first principles based on the density functional theory as implemented in the SIESTA code. We investigated aluminum nitride (AlN), boron nitride (BN) and carbon (C), subjected to external parallel electric field, perpendicular to their main axis. We discuss stability in terms of formation energy, using the chemical potential approach. We also analyze the electronic properties of these nanocones and show that in some cases the perpendicular electric field provokes a greater gap reduction when compared to the parallel field

Efficiency of extrinsic and intrinsic charge-carrier photogeneration processes obtained from the steady-state photocurrent action spectra of poly(p-phenylene vinylene) derivatives

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Quantization rules for bound states in quantum wells

An algebraic reformulation of the Bohr-Sommerfeld (BS) quantization rule is suggested and applied to the study of bound states in one-dimensional quantum wells. The energies obtained with the present quantization rule are compared to those obtained with the usual BS and WKB quantization rules and with the exact solution of the Schrodinger equation. We find that, in diverse cases of physical interest in molecular physics, the present quantization rule not only yields a good approximation to the exact solution of the Schrodinger equation, but yields more precise energies than those obtained with the usual BS and/or WKB quantization rules. Among the examples considered numerically are the Poeschl-Teller potential and several anharmonic oscillator potentials. which simulate molecular vibrational spectra and the problem of an isolated quantum well structure subject to an external electric field.

Magnetic flux inversion in charged BPS vortices in a Lorentz-violating Maxwell-Higgs framework

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Strain and vacancy cluster behavior of vanadium and tungsten-doped Ba[Zr(0.10)Ti(0.90)]O(3) ceramics

Strain and vacancy clusters behavior of polycrystalline vanadium (V) and tungsten (W)-doped Ba[Zr(0.10)Ti(0.90)]O(3), (BZT:2%V) and (BZT:2%W) ceramics obtained by the mixed oxide method was evaluated. Substitution of V and W reduces the distortion of octahedral clusters, decreasing the Raman modes. Electron paramagnetic resonance data indicate that the addition of dopants leads to defects and symmetry changes in the BZT lattice. Remnant polarization and coercive field are affected by V and W substitution due the electron-relaxation mode. The unipolar strain E curves as a function of electric field reach its maximum value for BZT:2%V and BZT:2%W ceramics. (c) 2008 American Institute of Physics.

Characterization of lanthanum-doped bismuth titanate thin films prepared by polymeric precursor method

Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The dielectric constant of highly doped bismuth titanate was equal to 148 while dielectric losses remained low (tan delta = 0.0018), and the films showed well-saturated polarization-electric field curves (2P(r) = 40.6 muC/cm(2) and V-c = 0.99 V). The leakage current densities improve for the lanthanum-doped system. For five-layered BLT films with x = 0.75, a charge storage density of 35 fC/mum(2) and a thickness of 320 nm were found. (C) 2004 Elsevier B.V. All rights reserved.

Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)