424 resultados para DIODES
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Recent years have shown steady progress towards molecular electronics, in which molecules form basic components such as switches, diodes and electronic mixers. Often, a scanning tunnelling microscope is used to address an individual molecule, although this arrangement does not provide long-term stability. Therefore, metal–molecule–metal links using break-junction devices have also been explored; however, it is difficult to establish unambiguously that a single molecule forms the contact. Here we show that a single hydrogen molecule can form a stable bridge between platinum electrodes. In contrast to results for organic molecules, the bridge has a nearly perfect conductance of one quantum unit, carried by a single channel. The hydrogen bridge represents a simple test system in which to understand fundamental transport properties of single-molecule devices.
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Absorption induced by electrochemically injected holes is studied in poly-9,9-dioctylfluorene (PFO) films. Injected charges form positive polarons which are delocalised over four fluorene units in the glassy phase and about seven fluorene units in its β-phase. Polaron absorption cross-sections at the 640 nm peak are similar to the published values of chemically reduced oligofluorenes in solution. The absorption cross-section of polaron in the β-phase at 470 nm is about eight times smaller than the stimulated emission cross-section derived from published data. This indicates that β-phase-rich PFO is an attractive candidate for a light-emitting layer in double-heterostructure organic laser diodes.
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A comunicação e transmissão de informação sem fios tornou - se uma realidade cada vez mais utilizada pelas sociedades contemporâneas. A nível profissional, as forças armadas de cada país acharam conveniente modernizar os seus meios, por forma a aumentar a eficiência e a segurança em determinadas tarefas. Nesse sentido, o Exército português adquiriu um robot (ROVIM) cuja função é desempenhar ações de reconhecimento e vigilância de modo a obter informações de forma segura. O objetivo desta dissertação é dimensionar e construir uma antena para controlo wireless do robot (ROVIM). As especificações técnicas desta antena requerem dois modos de operação, um com uma largura de feixe larga e outro com uma largura de feixe estreita. Para alcançar esses objetivos dimensionou-se e construiu-se duas antenas. Na dissertação são construídas duas antenas, a primeira é uma antena Yagi – Uda convencional e a segunda é uma antena com uma estrutura nova que permite a regulação do ganho e da largura de feixe a -3 dB. A primeira antena será o modelo base da segunda antena, que apresenta a inovação do controlo das caraterísticas de radiação. Esse controlo é possível através da introdução de díodos e do respetivo circuito de polarização na estrutura da antena. Inicialmente, as antenas foram dimensionadas e simuladas recorrendo ao programa de simulação CST MWS, de modo a operarem na banda dos 2,4 GHz. Após a construção das antenas, as caraterísticas de radiação foram medidas recorrendo à câmara anecoica e ao network analyzer, permitindo assim a comparação dos resultados medidos com os simulados.
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Organic-organic heterojunctions are nowadays highly regarded materials for light-emitting diodes, field-effect transistors, and photovoltaic cells with the prospect of designing low-cost, flexible, and efficient electronic devices.1-3 However, the key parameter of optimized heterojunctions relies on the choice of the molecular compounds as well as on the morphology of the organic-organic interface,4 which thus requires fundamental studies. In this work, we investigated the deposition of C60 molecules at room temperature on an organic layer compound, the salt bis(benzylammonium)bis(oxalato)cupurate(II), by means of noncontact atomic force microscopy. Three-dimensional molecular islands of C60 having either triangular or hexagonal shapes are formed on the substrate following a "Volmer-Weber" type of growth. We demonstrate the dynamical reshaping of those C60 nanostructures under the local action of the AFM tip at room temperature. The dissipated energy is about 75 meV and can be interpreted as the activation energy required for this migration process.
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"Supported in part by contract no. US AEC AT(11-1) 1469."
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"November 1, 1965."
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Bibliography: p. 35.
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"This work was supported in part by the Office of Naval Research under Contract No. Nonr-1834(15)"
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Mode of access: Internet.
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Cover title: Transistor manual, including tunnel diodes; specifications, applications, circuits.
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Cover title: Transistor manual, including signal diodes; applications, circuits, specifications.
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At head of title: Final report, Project TUN.
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Thesis (Ph.D.)--University of Washington, 2016-06
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We investigate the emission of multimodal polarized light from light emitting devices due to spin-aligned carrier injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as nonradiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g factor and magnetic field affect the degree of polarization of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring the degree of spin polarization of carrier injection into nonmagnetic semicondutors.
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Ion implantation can be used to confer electrical conductivity upon conventional insulating polymers such as polyetheretherketone (PEEK). We have implanted PEEK films using three different types of ion implantation: conventional inert gas and metal ion implantation, and ion beam mixing. We have applied a number of analytical techniques to compare the chemical, structural and electrical properties of these films. The most effective means of increasing electrical conductivity appears to be via ion beam mixing of metals into the polymer, followed by metal ion implantation and finally, inert gas ion implantation. Our results suggest that in all cases, the conducting region corresponds to the implanted layer in the near surface to a depth of similar to750 Angstrom (ion beam mixed) to similar to5000 Angstrom (metal ion). This latter value is significantly higher than would be expected from a purely ballistic standpoint, and can only be attributed to thermal inter-diffusion. Our data also indicates that graphitic carbon is formed within the implant region by chain scission and subsequent cross-linking. All ion implanted samples retained their bulk mechanical properties, i.e. they remained flexible. The implant layers showed no signs of de-lamination. We believe this to be the first comparative study between different implantation techniques, and our results support the proposition that soft electronic circuitry and devices can be created by conductivity engineering with ion beams. (C) 2004 Elsevier B.V. All rights reserved.