La gestión del supermercado virtual: tipificación del comportamiento del cliente online

Este artículo analiza diferentes elementos que influyen en el comportamiento de compra del cliente de un supermercado online. Estos elementos están relacionados tanto con aspectos estéticos del sitio web, como con los procesos que tienen lugar en el momento de realizar la compra. A partir de este análisis, se estudian los distintos grupos de consumidores con comportamientos homogéneos y se posicionan en función de sus actitudes. El análisis también permite definir la calidad del servicio prestado por este tipo de establecimientos, así como las principales dimensiones en que se despliega. En las conclusiones se citan aspectos en los que el gestor de un supermercado online debe incidir para mejorar la calidad de su servicio.

Competitive positioning of Spanish agricultural cooperatives

Cooperatives are the basis of the social economy in many agricultural sectors. The present research work investigates the management situation of the olive oil cooperatives in Catalonia. The study identifies a typology of cooperatives based on their attitudes towards to the sector. A positioning map of the different types of cooperatives is then established on the basis of their characteristics. The study concludes with important managerial aspects of olive oil cooperatives in Catalonia.

Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD

In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

We have investigated doped and undoped layers of microcrystalline silicon prepared by hot-wire chemical vapour deposition optically, electrically and by means of transmission electron microscopy. Besides needle-like crystals grown perpendicular to the substrate's surface, all of the layers contained a noncrystalline phase with a volume fraction between 4% and 25%. A high oxygen content of several per cent in the porous phase was detected by electron energy loss spectrometry. Deep-level transient spectroscopy of the crystals suggests that the concentration of electrically active defects is less than 1% of the undoped background concentration of typically 10^17 cm -3. Frequency-dependent measurements of the conductance and capacitance perpendicular to the substrate surface showed that a hopping process takes place within the noncrystalline phase parallel to the conduction in the crystals. The parasitic contribution to the electrical circuit arising from the porous phase is believed to be an important loss mechanism in the output of a pin-structured photovoltaic solar cell deposited by hot-wire CVD.

Analisis bibliometrico de la bibliografia citada en estudios de filologia española

Se analizan las referencias bibliográficas incluidas en un conjunto de obras de referencia y actas de congresos sobre filología española. A partir de este análisis, se determina el peso de diferentes tipologías documentales-monografías, publicaciones periódicas y actas de congresos- como canal de comunicación en esta disciplina. Asimismo se establecen los rankings de editoriales y revistas más citadas. A continuación, se realiza un estudio exhaustivo de citas a revistas, a partir del análisis de las referencias presentes en el núcleo de revistas más citadas establecido en la etapa anterior. Los resultados obtenidos muestran un uso considerable de formas de comunicación alternativas a los artículos en revistas académicas, como los libros o la prensa. Los rankings de títulos más citados obtenidos en las dos fases del estudio son similares entre sí, coinciden con los identificados en otros estudios previos e incluyen la mayoría de títulos vaciados en el Arts and Humanities Citation Index, lo que demuestra su validez.

INASP: la hora del protagonismo local en la cooperación al desarrollo científico y bibliotecario

La International Network for the Availability of Scientific Publications (INASP) es una ONG de cooperación al desarrollo, que persigue la mejora del acceso, producción y uso de la información científica, de forma que cada país cuente con recursos en este ámbito para afrontar sus propios retos de desarrollo. Surgió en 1992 por iniciativa del ICSU (International Council of Scientific Unions, actualmente International Council for Science) y contó con el apoyo de UNESCO, TWAS-The Academy of Sciences for the Developing World y AAAS (American Association for the Advancement of Science).

Comensalitat durant el bronze final i la primera edat del ferro al paratge arqueològic de Can Roqueta: anàlisi dels dipòsits relacionats amb el consum en contextos domèstics i funeraris

La reconstrucció de les pautes de consum d"aliments durant el bronze final i la primera edat de ferro, tant si són de caire domèstic com si no, passa per un anàlisi exhaustiu de les diferents dades arqueològiques. En primer lloc, tenim els espais destinats al consum. Les circumstàncies pròpies del registre arqueològic a Catalunya durant aquests períodes fa que, depèn del territori, aquest nivell d"anàlisi sigui més o menys evident. Així, en territoris on existeix una tradició arquitectònica en pedra i, fins i tot, dissenys urbanístics ben definits (entorn del Segre i l"Ebre), aquest problema resulta relativament fàcil de tractar en funció de la conservació de la resta d"elements i la particularitat de les estructures analitzades. Això ha permès caracteritzar certes pràctiques.de consum diferenciades del que podria ser propi d"un àmbit domèstic en jaciments com Barranc de Gàfols (habitacions 1 y 2), la Moleta del Remei (habitació 7), Tossal Redó (habitació 1), San Cristóbal (habitació 2), Sant Jaume Mas d"en Serrà (habitacions 3 i 4), l"edifici de Turó del Calvari de Vilalba dels Arcs o Genó (habitació 2) (Lucas 1989; López Cachero 1998; Sanmartí et al. 2000; Fatás 2004-05; Garcia 2005; Sardà 2008). Aquesta situació contrasta amb el que passa a la resta del litoral català on les estructures negatives són pràcticament l"única evidència del poblament existent i on resulta molt complicat, fins i tot, la documentació de qualsevol espai habitacional que ens permeti avançar en aquesta direcció.

Uso de e-books en bibliotecas universitarias de Estados Unidos: datos para salir del"Big Mess"

Reseña de: 2012 survey of ebook usage in U.S. academic libraries: third annual survey. LJ/SLJ Library Research Syndicate (LRS). [New York, N.Y.]: Library Journal, 2012. 93 p. Disponible en línea en: [consulta: 14 nov. 2012].

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed effective surface recombination velocities as low as 60 and 130 cms -1 on p- and n-type silicon, respectively. To our knowledge, these are the best results ever reported with intrinsic amorphous silicon films deposited by Catalytic CVD. The passivating properties of nanocrystalline silicon films strongly depended on the deposition conditions, especially on the filament temperature. Samples grown at lower filament temperatures (1600 °C) allowed effective surface recombination velocities of 450 and 600 cms -1 on n- and p-type silicon.

Stability of hydrogenated nanocrystalline silicon thin-film transistors

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies.

Estudios de los restos vegetales de diversas muestras procedentes del abrigo de Son Gallard- Son Marroig: el resultado de los analisis de fitolitos.

[spa] Los fitólitos son microrestos síliceos que reproducen el tejido celular de las plantas. Su identificación y cuantificación en un yacimiento arqueológico permiten obtener información sobre el tipo de plantas utilizadas en un contexto determinado así como su distribución. Fueron realizados análisis de fitolitos en diversos niveles correspondientes a diferentes períodos cronológicos del abrigo de Son Gallard-Son Marroig. Los resultados obtenidos señalan una deposición de carácter «antrópico» de materia vegetal en dos de los niveles analizados (TB3 y UE5), aunque sin una selección aparente del tipo de plantas depositadas. Por otro lado las muestras analizadas de la Covacha Este parecen indicar que se trata del suelo de hábitat del abrigo sin una deposición intencionada de materia vegetal, mas allá de la derivada por el uso continuado del abrigo. [eng] Phytoliths are silica microremains that reproduce the cellular tissue of plants. The identification and quantification of phytoliths in archaeological sediments, allows for a better understanding of the utilised plants in a pecific area as well as the distribution of the plants used. Phytolith analyses were performed on different levels from different periods in Son Gallard-Son Marroig rockshelter. The results obtained show an «anthropological» deposition of plants in two of the studied levels (TB3 and UE5), without apparent selection of plants. On the other hand, the samples analyzed from the Covacha Este seem to indicate the presence of vegetal remains product of the continued use of the soils with no intentional deposition.

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.