A Harmonic Suppression Scheme for Open-End Winding Split-Phase IM Drive Using Capacitive Filters for the Full Speed Range

Voltage source inverter (VSI)-fed six-phase induction motor (IM) drives have high 6n +/- 1, n = odd-order harmonic currents. This is because these currents, driven by the corresponding harmonic voltages in the inverter output, are limited only by the stator leakage impedance, as these harmonics are absent in the back electromotive force of the motor. To suppress the harmonic currents, either bulky inductive harmonic filters or complex pulsewidth modulation (PWM) techniques have to be used. This paper proposes a harmonic elimination scheme using switched capacitor filters for a VSI-fed split-phase IM drive. Two 3-phase inverters fed from capacitors are used on the open-end side of the motor to suppress 6n +/- 1, n = odd-order harmonics. A PWM scheme that can suppress the harmonics as well as balance the capacitor voltage is also proposed. The capacitor fed inverters are switched so that the fundamental voltage is not affected, and the fundamental power is always drawn from the main inverters. The proposed scheme is verified with a detailed experimental study. The effectiveness of the scheme is demonstrated by comparing the results with those obtained by disabling the capacitor fed inverters.

Switching and Release Time Analysis of Electrostatically Actuated Capacitive RF MEMS Switches

This paper explains the reason behind pull-in time being more than pull-up time of many Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches at actuation voltages comparable to the pull-in voltage. Analytical expressions for pull-in and pull-up time are also presented. Experimental data as well as finite element simulations of electrostatically actuated beams used in RF-MEMS switches show that the pull-in time is generally more than the pull-up time. Pull-in time being more than pull-up time is somewhat counter-intuitive because there is a much larger electrostatic force during pull-in than the restoring mechanical force during the release. We investigated this issue analytically and numerically using a 1D model for various applied voltages and attribute this to energetics, the rate at which the forces change with time, and softening of the overall effective stiffness of the electromechanical system. 3D finite element analysis is also done to support the 1D model-based analyses.

A MICROMACHINED WIDE-BAND IN-PLANE SINGLE-AXIS CAPACITIVE ACCELEROMETER WITH A DISPLACEMENT-AMPLIFYING COMPLIANT MECHANISM

With the premise that electronic noise dominates mechanical noise in micromachined accelerometers, we present here a method to enhance the sensitivity and resolution at kHz bandwidth using mechanical amplification. This is achieved by means of a Displacement-amplifying Compliant Mechanism (DaCM) that is appended to the usual sensing element comprising a proof-mass and a suspension. Differential comb-drive arrangement is used for capacitive-sensing. The DaCM is designed to match the stiffness of the suspension so that there is substantial net amplification without compromising the bandwidth. A spring-mass-lever model is used to estimate the lumped parameters of the system. A DaCM-aided accelerometer and another without a DaCM-both occupying the same footprint-are compared to show that the former gives enhanced sensitivity: 8.7 nm/g vs. 1.4 nm/g displacement at the sensing-combs under static conditions. A prototype of the DaCM-aided micromachined acclerometer was fabricated using bulk-micromachining. It was tested at the die-level and then packaged on a printed circuit board with an off-the-shelf integrated chip for measuring change in capacitance. Under dynamic conditions, the measured amplification factor at the output of the DaCM was observed to be about 11 times larger than the displacement of the proof-mass and thus validating the concept of enhancing the sensitivity of accelerometers using mechanical amplifiers. The measured first in-plane natural frequency of the fabricated accelerometer was 6.25 kHz. The packaged accelerometer with the DaCM was measured to have 26.7 mV/g sensitivity at 40 Hz.

Quantitative Strain and Compositional Studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.

Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers

This paper presents a method to enhance both the sensitivity and bandwidth of in-plane capacitive micromachined accelerometers by using compliant mechanical amplifiers, and thus obviating the compromise between the sensitivity and bandwidth. Here, we compare one of the most sensitive single-axis capacitive accelerometers and another with large resonant frequency reported in the literature with the modified designs that include displacement-amplifying compliant mechanisms (DaCMs) occupying the same footprint and under identical conditions. We show that 62% improvement in sensitivity and 34% improvement in bandwidth in the former, and 27% and 25% in the latter can be achieved. Also presented here is a dual-axis accelerometer that uses a suspension that decouples and amplifies the displacements along the two in-plane orthogonal axes. The new design was microfabricated, packaged, and tested. The device is 25-mu m thick with the interfinger gap as large as 4 m. Despite the simplicity of the microfabrication process, the measured axial sensitivity (static) of about 0.58 V/g for both the axes was achieved with a cross-axis sensitivity of less than +/- 2%. The measured natural frequency along the two in-plane axes was 920 Hz. Displacement amplification of 6.2 was obtained using the DaCMs in the dual-axis accelerometer. 2013-0083]

Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2

The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain opens up a variety of applications in the emerging area of straintronics. Using first-principles-based density functional theory calculations, we show that the band gap of a few layers of MoS2 can be tuned by applying normal compressive (NC) strain, biaxial compressive (BC) strain, and biaxial tensile (BT) strain. A reversible semiconductor-to-metal transition (S-M transition) is observed under all three types of strain. In the case of NC strain, the threshold strain at which the S-M transition occurs increases when the number of layers increase and becomes maximum for the bulk. On the other hand, the threshold strain for the S-M transition in both BC and BT strains decreases when the number of layers increase. The difference in the mechanisms for the S-M transition is explained for different types of applied strain. Furthermore, the effect of both strain type and the number of layers on the transport properties are also studied using Botzmann transport theory. We optimize the transport properties as a function of the number of layers and the applied strain. 3L- and 2L-MoS2 emerge as the most efficient thermoelectric materials under NC and BT strain, respectively. The calculated thermopower is large and comparable to some of the best thermoelectric materials. A comparison among the feasibility of these three types of strain is also discussed.

Strain-induced electronic phase transition and strong enhancement of thermopower of TiS2

Using first-principles density functional theory calculations, we show a semimetal to semiconducting electronic phase transition for bulk TiS2 by applying uniform biaxial tensile strain. This electronic phase transition is triggered by charge transfer from Ti to S, which eventually reduces the overlap between Ti-(d) and S-(p) orbitals. The electronic transport calculations show a large anisotropy in electrical conductivity and thermopower, which is due to the difference in the effective masses along the in-plane and out-of-plane directions. Strain-induced opening of band gap together with changes in dispersion of bands lead to threefold enhancement in thermopower for both p-and n-type TiS2. We further demonstrate that the uniform tensile strain, which enhances the thermoelectric performance, can be achieved by doping TiS2 with larger iso-electronic elements such as Zr or Hf at Ti sites.

Effect of epitaxial strain on phase separation in thin films

In epitaxially grown alloy thin films, spinodal decomposition may be promoted or suppressed depending on the sign of the epitaxial strain. We study this asymmetry by extending Cahn's linear theory of spinodal decomposition to systems with a composition dependent lattice parameter and modulus (represented by Vegard's law coefficients, GRAPHICS] and y, respectively), and an imposed (epitaxial) strain (e). We show analytically (and confirm using simulations) that the asymmetric effect of epitaxial strains arises only in elastically inhomogeneous systems. Specifically, we find good agreement between analytical and simulation results for the wave number GRAPHICS] of the fastest growing composition fluctuation. The asymmetric effect due to epitaxial strain also extends to microstructure formation: our simulations show islands of elastically softer (harder) phase with (without) a favourable imposed strain. We discuss the implications of these results to GeSi thin films on Si and Ge substrates, as well as InGaAs films on GaAs substrates.

Streptococcus pneumoniae Genome Database (SPGDB): A database for strain specific comparative analysis of Streptococcus pneumoniae genes and proteins

Streptococcus pneumoniae causes pneumonia, septicemia and meningitis. S. pneumoniae is responsible for significant mortality both in children and in the elderly. In recent years, the whole genome sequencing of various S. pneumoniae strains have increased manifold and there is an urgent need to provide organism specific annotations to the scientific community. This prompted us to develop the Streptococcus pneumoniae Genome Database (SPGDB) to integrate and analyze the completely sequenced and available S. pneumoniae genome sequences. Further, links to several tools are provided to compare the pool of gene and protein sequences, and proteins structure across different strains of S. pneumoniae. SPGDB aids in the analysis of phenotypic variations as well as to perform extensive genomics and evolutionary studies with reference to S. pneumoniae. (C) 2014 Elsevier Inc. All rights reserved.

A 5th and 7th order harmonic suppression scheme using capacitive filtering for 2-level VSI fed IM drive

In this paper, a 5th and 7th harmonic suppression technique for a 2-level VSI fed IM drive, by using capacitive filtering is proposed. A capacitor fed 2-level inverter is used on an open-end winding induction motor to suppress all 5th and 7th order harmonics. A PWM scheme that maintains the capacitor voltage, while suppressing the harmonics is also proposed. The proposed scheme is valid for the entire modulation range, including overmodulation and six-step mode of operation of the main inverter.

Texture Evolution in Nanocrystalline Nickel: Critical Role of Strain Path

The effect of strain path change during rolling on the evolution of deformation texture has been studied for nanocrystalline (nc) nickel. An orthogonal change in strain path, as imparted by alternating rolling and transverse directions, leads to a texture with a strong Bs {110}aOE (c) 112 > component. The microstructural features, after large deformation, show distinct grain morphology for the cross-rolled material. Crystal plasticity simulations, based on viscoplastic self-consistent model, indicate that slip involving partial dislocation plays a vital role in accommodating plastic deformation during the initial stages of rolling. The brass-type texture evolved after cross rolling to large strains is attributed to change in strain path.

Effect of Anisotropy of Fibers on the Stress-Strain Response of Fiber-Reinforced Soil

Reinforcing soil with fibers is a useful method for improving the strength and settlement response of soil. The soil and fiber characteristics and their interaction are some of the major factors affecting the strength of reinforced soil. The fibers are usually randomly distributed in the soil, and their orientation has a significant effect on the behavior of the reinforced soil. In the paper, a study of the effect of anisotropic distribution of fibers on the stress-strain response is presented. Based on the concept of the modified Cam clay model, an analytical model was formulated for the fiber-reinforced soil, and the effect of fiber orientation on the stress-strain behavior of soil was studied in detail. The results show that, as the inclination of fibers with the horizontal plane increased, the contribution of fibers in improving the strength of fiber-reinforced soil decreased. The effect of fibers is maximum when they are in the direction of extension, and vice versa. (C) 2014 American Society of Civil Engineers.

Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Phosphorene, a two-dimensional analog of black phosphorous, has been a subject of immense interest recently, due to its high carrier mobilities and a tunable bandgap. So far, tunability has been predicted to be obtained with very high compressive/tensile in-plane strains, and vertical electric field, which are difficult to achieve experimentally. Here, we show using density functional theory based calculations the possibility of tuning electronic properties by applying normal compressive strain in bilayer phosphorene. A complete and fully reversible semiconductor to metal transition has been observed at similar to 13.35% strain, which can be easily realized experimentally. Furthermore, a direct to indirect bandgap transition has also been observed at similar to 3% strain, which is a signature of unique band-gap modulation pattern in this material. The absence of negative frequencies in phonon spectra as a function of strain demonstrates the structural integrity of the sheets at relatively higher strain range. The carrier mobilities and effective masses also do not change significantly as a function of strain, keeping the transport properties nearly unchanged. This inherent ease of tunability of electronic properties without affecting the excellent transport properties of phosphorene sheets is expected to pave way for further fundamental research leading to phosphorene-based multi-physics devices.

On the strain rate sensitivity of plastic flow in metallic glasses

The nanoindentation technique was employed to examine the strain rate sensitivity, m, and its dependence on the structural state of a Zr-based bulk metallic glass (BMG). The free volume content in the BMG was varied by examining samples in the as-cast (AC), shot-peened (SP), and structurally relaxed (SR) states. Hardness values measured at different loading rates and over a temperature range of 300-423 K as well as the strain-rate jump tests conducted in the quasi-static regime at room temperature, show that m is always negative. All the load-displacement (P-h) curves in this temperature regime exhibit serrated load-displacement responses, indicating that the shear band mediated inhomogeneous plastic flow governs deformation. Such localization of flow and associated softening is the raison d'etre for the negative m. Significant levels of pile-up around the indents were also noted. The order in the average values of hardness, pile-up heights, and the displacement bursts on the P-h curves was always such that SR > AC > SP, which is also the order of increasing free volume content. These observations were utilized to discuss the reasons for the negative strain rate sensitivity, and its dependence on the structural state of metallic glasses. It is suggested that the positive values of m reported in the literature for them are possibly experimental artefacts that arise due to large pile ups around the indents which lead to erroneous estimation in hardness values. (C) 2014 Elsevier B.V. All rights reserved.

Controlling phase separation in La5/8-yPryCa3/8MnO3 (y=0.45) epitaxial thin films by strain disorder

Present study reveals that the length-scale of phase separation in La5/8-yPryCa3/8MnO3 thin films can be controlled by strain disorder invoked during the growth and relaxation process of film. Strain disorder provides an additional degree of freedom to tune colossal magnetoresistance. Magneto-transport measurements following cooling and heating in unequal fields protocol demonstrate that coherent strain stabilizes antiferromagnetic insulating phase, while strain disorder favors ferromagnetic metallic phase. Compared to bulk, antiferromagnetic-insulating phase freezes at lower temperatures in strain disordered films. Raman spectroscopy confirms the coexistence of charge-ordered-insulating and ferromagnetic-metallic phases which are structurally dissimilar and possess P2(1)/m and R-3C like symmetries, respectively. (C) 2015 AIP Publishing LLC.