921 resultados para Berry phase effect
Resumo:
We have studied the evolution of microstructure when a disordered ternary alloy is quenched into a ternary miscibility gap. We have used computer simulations based on multicomponent Cahn-Hilliard (CH) equations for c(A) and c(B), the compositions (in mole fraction) of A and B, respectively. In this work, we present our results on the effect of relative interfacial energies on the temporal evolution of morphologies during spinodal phase separation of an alloy with average composition, c(A) = 1/4, c(B) = 1/4 and c(C) = 1/2. Interfacial energies between the 'A' rich, 'B' rich and 'C' rich phases are varied by changing the gradient energy coefficients. The phases associated with a higher interfacial energy are found to be more rounded than those with lower energy. Further, the kinetic paths (i.e. the history of A-rich, B-rich and C-rich regions in the microstructure) are also affected significantly by the relative interfacial energies of the three phases.
Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO2 Thin Films
Resumo:
In the present work, we report the deposition of zirconia thin films on Si(100) at various substrate temperatures by low-pressure metalorganic chemical vapor deposition (MOCVD). Three different zirconium complexes, viz., tetrakis(2,4-pentadionato)zirconium(IV), [Zr(pd)4], tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato)zirconium(IV), [Zr(thd)4], and tetrakis(t-butyl-3-oxo-butanoato)zirconium(IV), [Zr(tbob)4] are used as precursors. The relationship between the molecular structures of the precursors and their thermal properties, as examined by TG/DTA is presented. The films deposited using these precursors have distinctly different morphology, though all of them are of the cubic phase. The films grown from Zr(thd)4 are well crystallized, showing faceted growth at 575°C, whereas the films grown from Zr(pd)4 and Zr(tbob)4 are not well crystallized, and display cracks. These differences in the observed microstructure may be attributed to the different chemical decomposition pathways of the precursors during the film growth, which influence the nucleation and the growth processes. This is also evidenced by the different kinetics of growth from these three precursors under otherwise identical CVD conditions. The details of thin film deposition, and film microstructure analysis by XRD and SEM is presented. The dielectric behavior of the films deposited from different precursors, as studied by C-V measurements, are compared.
Resumo:
We have investigated the effect of biaxial strain on local electrical/electronic properties in thin films of La0.7Ca0.3MnO3 with varying degrees of biaxial strain in them. The local electrical properties were investigated as a function of temperature by scanning tunneling spectroscopy (STS) and scanning tunneling potentiometry (STP), along with the bulk probe like conductance fluctuations.The results indicate a positive correlation between the lattice mismatch biaxial strain and the local electrical/electronic inhomogenities observed in the strained sample. This is plausible since the crystal structure of the manganites interfere rather strongly with the magnetic/electronic degrees of freedom. Thus even a small imbalance (biaxial strain) can induce significant changes in the electrical properties of the system.
Resumo:
Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.
Resumo:
The role of B2O3 addition on the long phosphorescence of SrAl2O4:Eu2+, Dy3+ has been investigated. B2O3 is just not an inert high temperature solvent (flux) to accelerate grain growth, according to SEM results. B2O3 has a substitutional effect, even at low concentrations. by way of incorporation of BO4 in the corner-shared AlO4 framework of the distorted 'stuffed' tridymite structure of SrAl2O4. which is discernible from the IR and solid-state MAS NMR spectral data. With increasing concentrations, B2O3 reacts with SrAl2O4 to form Sr4Al4O25 together with Sr-borate (SrB2O4) as the glassy phase, as evidenced by XRD and SEM studies. At high B2O3 contents, Sr4Al14O25 converts to SrAl2B2O7 (cubic and hexagonal), SrAl12O19 and Sr-borate (SrB4O7) glass. Sr4Al14O25:Eu2+, Dy3+ has also been independently synthesized to realize the blue emitting (lambda(em)approximate to490 nm) phosphor. The afterglow decay as well as thermoluminescence studies reveal that Sr4Al14O25:Eu, Dy exhibits equally long phosphorescence as that of SrAl2O4:Eu2+, Dy3+. In both cases, long phosphorescence is noticed only when BO4 is present along with Dy3+ and Eu2+. Here Dy3+ because of its higher charge density than Eu2+ prefers to occupy the Sr sites in the neighbourhood of BO4, as the effective charge on borate is more negative than that of AlO4. Thus. Dy3+ forms a substitutional defect complex with borate and acts as an acceptor-type defect center. These defects Eu2+ ions and the subsequent thermal release of hole at room temperature followed by the trap the hole generated by the excitation of recombination with electron resulting in the long persistent phosphorescence. (C) 2003 Elsevier Science B.V. All rights reserved.
Resumo:
Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol-gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 A degrees C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 A degrees C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tan delta) were increased with increase of annealing temperature.
Effects of phase inhomogeneity and boundary conditions on the dynamic response of SMA wire actuators
Resumo:
This paper reports the simulation results from the dynamic analysis of a Shape Memory Alloy (SMA) actuator. The emphasis is on understanding the dynamic behavior under various loading rates and boundary conditions, resulting in complex scenarios such as thermal and stress gradients. Also, due to the polycrystalline nature of SMA wires, presence of microstructural inhomogeneity is inevitable. Probing the effect of inhomogeneity on the dynamic behavior can facilitate the prediction of life and characteristics of SMA wire actuator under varieties of boundary and loading conditions. To study the effect of these factors, an initial boundary value problem of SMA wire is formulated. This is subsequently solved using finite element method. The dynamic response of the SMA wire actuator is analyzed under mechanical loading and results are reported. Effect of loading rate, micro-structural inhomogeneity and thermal boundary conditions on the dynamic response of SMA wire actuator is investigated and the simulation results are reported.
Resumo:
In the present study, the beta transus of boron-modified Ti-6Al-4V alloy was found to be almost equivalent to that of the normal alloy, although there is a difference in interstitial element content large enough to produce significant change. Compositional analysis confirms the scavenging ability of the boride particles that are present in the microstructure toward the interstitial elements. This factor can successfully retard the alpha -> beta phase transformation locally and increase the overall beta transus of boron-added material.
The Behaviour of Two-Phase Flow of DNAPL and Water through a Fractured Rock under Confining Pressure
Resumo:
This study presents the characterization of DNAPL and water flow in a fracture under confining pressure. A comprehensive mathematical model and the conditions under which DNAPL will enter an initially water-saturated deforming rock fracture are discussed. A numerical model with which to predict the quantity of each phase in terms of their saturations in deforming rock joint is developed. The effect of varying confining stresses on the traverse time of DNAPL across a fractured aquitard is studied. The sensitivity analysis for physical and hydraulic properties like initial fracture apertures, fracture dips, equivalent fracture aperture and confining pressures are performed and discussed.
Resumo:
The theory of phase formation is generalised for any arbitrary time dependence of nucleation and growth rates. Some sources of this time dependence are time-dependent potential inputs, ohmic drop and the ingestion effect. Particular cases, such as potentiostatic and, especially, linear potential sweep, are worked out for the two limiting cases of nucleation, namely instantaneous and progressive. The ohmic drop is discussed and a procedure for this correction is indicated. Recent results of Angerstein-Kozlowska, Conway and Klinger are critically investigated. Several earlier results are deduced as special cases. Evans' overlap formula is generalised for the time-dependent case and the equivalence between Avrami's and Evans' equations established.
Resumo:
In this paper, we report a significant improvement in mechanical properties of near eutectic Nb-Si alloys by addition of Gallium (Ga) and control of microstructural length scale. A comparative study of two alloys Nb-18.79 at.%Si and Nb-20.2 at.%Si-2.7 at.%Ga were carried out. The microstructure refinements were carried out by vacuum suction casting in water cooled thick copper mold. It is shown that addition of Ga suppresses Nb(3)Si phase and promotes beta-Nb(5)Si(3) phase. The microstructural length scale and in particular eutectic spacing reduces significantly to 50-100 nm in suction cast ternary alloys. Compression test shows a strength of 2.8 +/- 0.1 GPa and plasticity of 4.3 +/- 0.03%. In comparison, the binary Nb-18.79 at.%Si alloy processed under identical conditions exhibit coarser length scale (300-400 nm) and brittle behavior. The fracture toughness of Ga containing suction cast alloy shows a value of 24.11 +/- 0.5 MPa root m representing a major improvement for bulk Nb-Si eutectic alloy. (C) 2011 Elsevier Ltd. All rights reserved.
Resumo:
We describe here a minimal theory of tight-binding electrons moving on the square planar Cu lattice of the hole-doped cuprates and mixed quantum mechanically with their own Cooper pairs. The superconductivity occurring at the transition temperature T(c) is the long-range, d-wave symmetry phase coherence of these Cooper pairs. Fluctuations, necessarily associated with incipient long-range superconducting order, have a generic large-distance behavior near T(c). We calculate the spectral density of electrons coupled to such Cooper-pair fluctuations and show that features observed in angle resolved photoemission spectroscopy (ARPES) experiments on different cuprates above T(c) as a function of doping and temperature emerge naturally in this description. These include ``Fermi arcs'' with temperature-dependent length and an antinodal pseudogap, which fills up linearly as the temperature increases toward the pseudogap temperature. Our results agree quantitatively with experiment. Below T(c), the effects of nonzero superfluid density and thermal fluctuations are calculated and compared successfully with some recent ARPES experiments, especially the observed bending or deviation of the superconducting gap from the canonical d-wave form.
Resumo:
Condensation of water droplets during rapid evaporation of a polymer solution, under humid conditions, has been known to generate uniformly porous polymer films. Similar porous films are also formed when a solution of the polymer in THF containing small amounts of water, is allowed to evaporate rapidly under air flow; this suggests that water droplets may be formed during the final stages of film formation. In the presence of added surfactants, the interface of water droplets could become lined with the surfactants and consequently the internal walls of the pores generated, upon removal of the water, could become decorated with the hydrophilic head groups of the surfactant molecules. In a series of carefully designed experiments, we have examined the effect of added surfactants, both anionic and cationic, on the formation of porous PMMA films; the films were prepared by evaporating a solution of the polymer in THF containing controlled amounts of aqueous surfactant solutions. We observed that the average size of the pores decreases with increasing surfactant concentration, while it increases with increasing amounts of added water. The size of the pores and their distribution were examined using AFM and IR imaging methods. Although IR imaging possessed inadequate resolution to confirm the presence of surfactants at the pore surface, exchange of the inorganic counterion, such as the sodium-ion of SDS, with suitable ionic organic dyes permitted the unequivocal demonstration of the presence of the surfactants at the interface by the use of confocal fluorescence microscopy.
Resumo:
he standard Gibbs energy of formation of CaCu3Ti4O12 (CCTO) from CaTiO3, CuO and TiO2 has been determined as a function of temperature from 925 to 1350 K using a solid-state electrochemical cell with yttria-stabilized zirconia as the solid electrolyte. Combining this result with information in the literature on CaTiO3, the standard Gibbs energy of formation of CCTO from its component binary oxides, CaO, CuO and TiO2, has been obtained: View the MathML source (CaCu3Ti4O12)/J mol−1 (±600) = −125231 + 6.57 (T/K). The oxygen chemical potential corresponding to the reduction of CCTO to CaTiO3, TiO2 and Cu2O has been calculated from the electrochemical measurements as a function of temperature and compared on an Ellingham diagram with those for the reduction of CuO to Cu2O and Cu2O to Cu. The oxygen partial pressures corresponding to the reduction reactions at any chosen temperature can be read using the nomograms provided on either side of the diagram. The effect of the oxygen partial pressure on phase relations in the pseudo-ternary system CaO–CuO/Cu2O–TiO2 at 1273 K has been evaluated. The phase diagrams allow identification of secondary phases that may form during the synthesis of the CCTO under equilibrium conditions. The secondary phases may have a significant effect on the extrinsic component of the colossal dielectric response of CCTO.
Resumo:
A generalized enthalpy update scheme is presented for evaluating solid and liquid fractions during the solidification of binary alloys, taking solid movement into consideration. A fixed-grid, enthalpy-based method is developed such that the scheme accounts for equilibrium as well as for nonequilibrium solidification phenomena, along with solid phase movement. The effect of solid movement on the solidification interface shape and macrosegregation is highlighted.