996 resultados para 510
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通过单因子和多因子摇瓶正交试验,确定了米曲霉液态发酵产氨基酰化酶的最佳发酵条件。优化发酵培养基组成(ρ/g L-1): 葡萄糖40,蔗糖10,可溶性淀粉20,蛋白胨2.5,马铃薯液1 000mL, pH自然。培养基装量50mL/250mL三角瓶,接种量4%。培养温度30℃,转速100 rmin-1,发酵时间42h。每50mL培养物的总酶活由优化前的2627U提高到7338U,是优化前的2.79倍。 研究了米曲霉氨基酰化酶的部分酶学性质,该酶催化反应的最适pH为7.0,最适温度为40℃,低浓度的Co2+(5×10-4mol/L)对酶活激活作用显著,催化反应过程中,底物浓度大于0.2 mol/L时,存在高浓度底物抑制酶活力现象。 初步探索了包埋法固定化米曲霉氨基酰化酶的载体,在实验的五种载体中,以海藻酸钠为载体包埋固定化米曲霉氨基酰化酶酶活保留率高,且操作简单,成本低廉。对包埋法固定化米曲霉氨基酰化酶酶学性质进行了研究,较游离米曲霉氨基酰化酶,最适温度未发生改变,最适pH向碱性范围偏移至8.0,对酸碱和热的稳定性增强,最适底物浓度增大到0.4 mol/L。 根据氨基酰化酶能立体专一水解L-氨基酰化物的特点,利用米曲霉氨基酰化酶对消旋苯丙氨酸进行了拆分。在米曲霉氨基酰化酶选择性的作用于底物N-乙酰-L-苯丙氨酸,得到L-苯丙氨酸后,通过732阳离子树脂和结晶法分别将L-苯丙氨酸和N-乙酰-D-苯丙氨酸分离,N-乙酰-D-苯丙氨酸通过酸水解脱去乙酰基得到D-苯丙氨酸,拆分得到光学纯度为98%的L-苯丙氨酸(收率84.8%)和光学纯度为92.3%的D-苯丙氨酸(收率89.5%)。 separate factors tests and orthogonal experiments,the optimum fermentation conditions of aminoacylase –producing Aspergillus oryzae were determined, as follows(ρ/g L-1),glucose 40,sucrose 10,soluble starch 20,peptone 2.5,potato juice 1000ml, inoculation volume 4%and fermentation temperature 30℃,rotation speed 100rmin-1.The highest total enzyme activity ,7338μ,was obtained after fermentation for 42 h, increased by 279% compared with the original value of 2627μbefore optimization. We dicussed partial characteristics of aminoacylase. The optimal pH and temperature of aminoacylase were 7.0 and 40℃ respectively. Low- concentration Co2+ (5×10-4mol/L)activated the aminoacylase remarkably while high-concentration substrate lowered the aminoacylase . Five vectors has been used for immobolizing the enzyme and calcium alginate showed to be the best one for it had the slightest influence on the enzyme activity, easy to operate ,and low in price, comparing with other fours. The enzymatic charateristic study showed that its optimum temperature didn’t change, but the optimum pH and substrat concentration were higher after immobilization. The stability of immobolized enzyme to acid, alkaline and heat rised as well. The aminoacylse from Aspergillus oryzae was used to resolute racemic phenylalanine to obtain D-phenylalanine. After catalyzing process, we took two methods to separate D-phenylalanine .In end,L-phenylalanine was obtained with 98% optical purity in 84.8% yield, D-phenylalanine was obtained with 92.3% optical purity in 89.5% yield.
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本工作研究460 keV、3 MeV和308 MeV Xe23+辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe23+辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe23+辐照后样品谱的变化可看到,在较低剂量条件下,516 nm(2.4 eV)和564 nm(2.2 eV)处的发光峰随辐照剂量增加而增强,且当剂量增到1×1016cm-2时,564 nm处的发光峰消失,只有516 nm(2.4 eV)处的发光峰较强。从308 MeV Xe23+辐照后样品的光致发光谱中可看到,357 nm(3.47 eV)和516 nm(2.4 eV)处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示:波数在460~510 cm-1和630 cm-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000~1 300 cm-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。
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本文介绍了近代物理研究所自行生长的CsI(Tl)晶体用于γ射线及重离子能量测量的结果。测量662keVγ射线时得到好于10%的能量分辨(采用光电倍增管读出),同时光输出可达到同类型晶体的130%;测量能量为30MeV/u左右的重离子时得到好于2%的能量分辨(采用光二极管读出)。
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研究了L-α-丙氨酸剂量计测量12C离子辐射的剂量学特性,实验证明丙氨酸剂量计适用于12C离子辐射的剂量学测量。另外,还研究了12C离子照射人外周血诱发的染色体畸变(双着丝粒+着丝粒环)的剂量效应,在0—8.0 Gy范围内拟合的最佳回归方程为Y=0.858 503D+0.361 5×10-2D2。
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主要研究了110keV的He~+高温注入Al_2O_3单晶及1.1MeV/u的~(208)Pb~(27+)辐照注氦Al_2O_3样品的光致发光的特性。从测试结果可以清楚地看到在375nm,413nm和450nm处出现了强烈的发光峰。并且在600K,5×10~(16) ions/cm~2剂量点,样品的发光峰是最强的。这表明He~+注入Al_2O_3后使带隙中深的辐射中心复合的效率大幅度提高,极大的增强了其发光强度,而且发光伴随着蓝移现象。而经过高能~(208)Pb~(27+)辐照后的样品,在390nm出现了新的发光峰,从FTIR谱中我们能够看到,可能是~(208)Pb~(27+)辐照相对沉积膜出现一定的晶化,其中含有许多纳米尺寸的Al_2O_3晶粒所致。
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频率自动调谐系统是聚束器的重要组成部分之一。频率调谐系统成功的研制和投入使用达到了使谐振腔体的固有谐振频率在22~54 MHz的范围内自动稳定在输入信号频率上的目的,频率自动微调系统达到了±5×10-6的频率稳定度,解决了由于腔体失谐所造成的高频电压滑落的问题,由此在腔体的加速缝隙间得到稳定的高频电压,保证了聚束器系统的高质量可靠运行。
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利用Skyrme Hartree Fock势和Woods Saxon势 ,选取稳定核4 8Ca和丰中子核60 Ca ,对中子平均场势能进行了研究 ,并给出了其特性 .发现丰中子核60 Ca的SHF势与Woods Saxon势在核表面区域相当符合 ,但在核表面以外有相当大的差距 .SHF势在表面以外部分比表面区域呈现出更大的弥散度 ,而原有的Woods Saxon势不能描述这一特征 .为此 ,对Woods Saxon势形式进行了修正 ,经过验证 ,修正的Woods Saxon势能正确地描述丰中子核的中子晕特性 .
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研究了 HIRFL上重离子辐照装置控制系统准确性 ,结果表明实验系统剂量的准确与剂量率有关。在一定的剂量下要选择合适的剂量率可保持控制系统的准确。同时在考虑精确剂量时 ,应修正实验数据
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描述了用于兰州在线同位素分离的FEBIAD靶 -离子源的改进、最新进展和结果。经过改进后 ,在线同位素分离器对Xe的分辨本领由原来的 360提高到 60 0 ,对199Hg的在线测量效率提高了一个数量级 ,并测出了Hg、At、Rn等元素的一系列放射性同位素产物及生成截面为 5×10 - 34 m2 的2 0 8Hg衰变的能量最高的一条γ线。
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A phenol-degrading. microorganism, Alcaligenes faecalis, was used to study the substrate interactions during cell growth on phenol and m-cresol dual substrates. Both phenol and m-cresol could be utilized by the bacteria as,the sole carbon and energy sources. When cells grew on the mixture of phenol and m-cresol, strong substrate interactions were observed. m-Cresol inhibited the degradation of phenol, on the other hand, phenol also inhibited the utilization of m-cresol, the overall cell growth rate was the co-action of phenol and m-cresol. In addition, the cell growth and substrate degradation kinetics of phenol, m-cresol as single and mixed substrates for A. faecalis in batch cultures were also investigated over a wide range of initial phenol concentrations (10-1400 mg L-1) and initial m-cresol concentrations (5-200 mg L-1). The single-substrate kinetics was described well using the Haldane-type kinetic models, with model constants of it mu(m1) = 0.15 h(-1), K-S1 = 2.22 mg L-1 and K-i1 = 245.37 mg L-1 for cell growth on phenol and mu(m2) = 0.0782 h(-1), K-S2 = 1.30 mg L-1 and K-i2 = 71.77 mgL(-1), K-i2' = 5480 (mg L-1)(2) for cell growth on m-cresol. Proposed cell growth kinetic model was used to characterize the substrates interactions in the dual substrates system, the obtained parameters representing interactions between phenol and m-cresol were, K = 1.8 x 10(-6), M = 5.5 x 10(-5), Q = 6.7 x 10(-4). The results received in the experiments demonstrated that these models adequately described the dynamic behaviors of phenol and m-cresol as single and mixed substrates by the strain of A. faecalis.
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Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.