Anti Human Immunodeficiency Virus Type 1 (HIV-1) Agents 4. Discovery of 5,5 '-(p-Phenylenebisazo)-8-hydroxyquinoline Sulfonates as New HIV-1 Inhibitors in Vitro

To search for compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, ten 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline sulfonates (4a-j) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro for the first time. Some compounds demonstrated anti-HIV-1 activity, especially 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-ethylbenzenesulfonate (4g) and 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-chlorobenzenesulfonate (41) showed the more potent anti-HIV-1 activity with 50% effective concentration (EC50) values of 2.59 and 4.01 mu g/ml, and therapeutic index (TI) values of 31.77 and 24.51, respectively.

Report of the training in database and spatial analysis for Marine Protected Areas staff in Indonesia's BOBLME region, Medan, Indonesia, 30 June-4 July, 2015

Training included: Geographic Information System (GIS)concept and software; Global Positioning System (GPS); Ecological Gap Analysis and Marine Protected Area (MPA) design using Marine Reserve Design using Spatially Explicit Annealing (MARXAN); and cartography.

Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) films

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible-far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. © 2013 Elsevier B.V.

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

半导体可饱和吸收镜自启动的Kerr锁模Cr~(4+)∶YAG激光器

采用传统的X型像散腔,利用一块精心设计的半导体可饱和吸收镜(SESAM)做启动元件,实现了自启动的Kerr锁模Cr4+∶YAG激光器.输出脉冲的最窄脉宽小于80 fs,脉冲重复频率为120 MHz,脉冲峰值功率可以达到100 W以上.

抗番茄灰霉病菌农用抗生素D2-4发酵条件的研究

对拮抗番茄灰霉病菌的D2 -4菌株培养基成分和发酵条件进行了研究。经研究发现在28℃ ,180r·min -1条件下 ,最佳发酵时间为96h左右 ,培养20～24h的种子液以7 %的接种量转接有利于提高抑菌活性 ,装液量为60mL/250mL三角瓶 ,均匀设计试验得出,最佳培养基配方为:黄豆饼粉1.10 %、葡萄糖2.71 %、蔗糖1.00 %、NaCl0.10 %、酵母膏0.10 %、pH值6.61。

均相钕系催化剂合成窄相对分子质量分布的高顺式-1，4-聚丁二烯

考察了由Nd（vers）3（简称Nd）、Al（i—Bu）2H（简称Al）和Al（i—Bu）2Cl（简称Cl）组成的均相催化剂体系在5L釜中于70℃聚合丁二烯的反应规律，并在2m^3装置上进行了放大试验。结果表明，该均相钕系催化剂具有高的稳定性；Al／Nd（摩尔比）是影响相对分子质量分布的重要因素，当Al／Nd低于20时，产物的相对分子质量分布在3．00以下；改变Nd／Bd（摩尔比）或使用不同组成的Al，可改变聚合产物的门尼黏度，但对相对分子质量分布无明显影响。在2m^3装置上，采用均相钕系催化剂可以得到收率大于90％、相对分子质量分布小于3.00和顺式-1，4-结构摩尔分数大于97．0％的聚丁二烯

Structure and liquid crystalline properties of 5-[(4 '-heptoxy-4-biphenylyl)carbonyloxy]-1-pentyne

The crystal structure and liquid crystalline properties of a biphenyl-containing acetylene, [5-[(4'-heptoxy-4- biphenylyl) carbonyloxy]-1-pentyne (A3EO7) were investigated by electron crystallography, X-ray diffraction, polarizing optical microscopy, differential scanning calorimetry, transmission electron microscopy, and atomic force microscopy. A3EO7 crystals obtained from a toluene solution adopts a monoclinic P112/m space group with unit cell parameters of a = 6.25 Angstrom, b = 7.82 Angstrom, c = 46.70 Angstrom and gamma = 96.7degrees, as determined using electron diffraction. Upon cooling from the isotropic phase, A3EO7 exhibits a smectic A phase in the temperature range 72.4 - 53.6degreesC. Further lowering of the temperature results in the formation of a smectic C phase which exhibits a strong tendency towards crystallization.

Liquid crystal properties of a mesogenic polyacetylene, poly(11-[(4 '-heptoxy-4-biphenylyl)carbonyloxy]-1-undecyne)

The liquid crystalline properties of a mesogenic poly(1-alkyne) and the corresponding monomer were studied using transmission electron microscopy, X-ray diffraction, polarizing optical microscopy and differential scanning calorimetry. The monomer exhibits a monotropic smectic A phase and a metastable crystalline phase. The rigid polymer backbones do not prevent the mesogenic moieties from packing into smectic A and B phases in the temperature ranges 127.6 - 74.1degreesC and 74.1degreesC - room temperature, respectively, on cooling from the isotropic melt.

4,7-(氯磺酸基苯基)-1,10-菲啰啉-2,9-二羧酸-铕标记甲胎蛋白抗体

在合成BCPDA基础上 ,对甲胎蛋白抗体与BCPDA连接及与铕离子螯合条件进行了研究。BCPDA与甲胎蛋白抗体反应后 ,分离纯化最佳淋洗液为pH9.1的0.1mol/L碳酸盐缓冲溶液 ,BCPDA用量为甲胎蛋白抗体量 (mol)的120～160倍;反应时间为30min。讨论了Eu3+ BCPDA AFP抗体螯合物的荧光光谱 ,最佳温育时间为60min,体系pH值为7.8的Tris HCl溶液。当Eu3+ 浓度为10-6mol/L时,BCPDA的检出限为4.3×10-11mol/L。