Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Electrical properties of individual and small ensembles of InAs/InP nanostructures

We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

HPF boost interleaved operating in discontinuous conduction mode for trolleybus application

This paper deals with results of a research and development (R&D) project in cooperation with Electric Power Distribution Company in São Paulo (Brazil) regarding the development and experimental analysis of a new concept of power drive system suitable for application in traction systems of electrical vehicles pulled by electrical motors, which can be powered by urban DC or AC distribution networks. The proposed front-end structure is composed by five boost power cells in interleaving connection, operating in discontinuous conduction mode as AC-DC converter, or as DC-DC converter, in order to provide the proper DC output voltage range required by DC or AC adjustable speed drivers. Therefore, when supplied by single-phase AC distribution networks, and operating as AC-DC converter, it is capable to provide high power factor, reduced harmonic distortion in the input current, complying with the restrictions imposed by the IEC 61000-3-4 standards resulting in significant improvements for the trolleybuses systems efficiency and for the urban distribution network costs. Considering the compliance with input current restrictions imposed by IEC 61000-3-4 standards, two digital control strategies were evaluated. The digital controller has been implemented using a low cost FPGA (XC3S200) and developed totally using a hardware description language VHDL and fixed point arithmetic. Experimental results from a 15 kW low power scale prototype operating in DC and AC conditions are presented, in order to verify the feasibility and performance of the proposed system. © 2009 IEEE.

Trolleybus power system for operation with AC or DC distribution networks

This paper presents the development and experimental analysis of a special input stage converter for a Trolleybus type vehicle allowing its operation in AC (two wires, single-phase) or DC distribution networks. The architecture of proposed input stage converter is composed by five interleaved boost rectifiers operating in discontinuous conduction mode. Furthermore, due to the power lines characteristics, the proposed input power structure can act as AC to DC or as DC to DC converter providing a proper DC output voltage range required to the DC bus. When operation is AC to DC, the converter is capable to provide high power factor with reduced harmonic distortion for the input current, complying with the restrictions imposed by IEC 61000-3-4 standard. Finally, the main experimental results are presented in order to verify the feasibility of the proposed converter, demonstrating the benefits and the possibility for AC feeding system for trolleybus type vehicle. © 2010 IEEE.

Power electronics courses for the new paradigms of the electrical system

This paper presents a historical perspective of the Power Electronics education that has lead to the present situation in which such technology is indispensable for the exploitation of almost all type of clean energy primary sources. Some academic initiatives in Brazil are here discussed focusing the institutions grouped in a CAPES-Pró-Engenharia program. The curricula aspects and innovations are presented, emphasizing the multidisciplinary character of this field of Power Electronics application. © 2011 IEEE.

Effect of structural anisotropy on electrical and magnetic properties of polyaniline conducting films

It is shown that highly conducting films of polyaniline protonated with di-esters of sulfosuccinic and sulfophthalic acids which contain alkyl- or alkoxy-type substituents exhibit highly anisotropic structural, electrical and magnetic properties. The layered-like structure of these films can be described as consisting of polyaniline chains which are mainly oriented parallel to the plane of the film and form regular out-of-plane stacks. These stacks are separated by bilayers of the dopant anions. Accordingly, the main anisotropy observed for solution cast films implies in-plane and out-of-plane measurements. An electrical anisotropy of about 80 is found for the in-plane and out-of-plane electronic conductivities at 5 K. The temperature dependences of the in-plane and out-of-plane conductivities are qualitatively similar and have been fitted as a series combination of variable-range-hopping-type and power law contributions. A maximum is observed in the temperature dependence of the electrical anisotropy at low temperature. The films also show a clear anisotropy of magnetization whose temperature and field characteristics depend on the chemical structure of the dopant anion. © 2013 Elsevier B.V.

Effect of a Polymeric Protective Coating on Optical and Electrical Properties of Poly(p-phenylene vinylene) Derivatives

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Synthesis and thermal behavior study of complexes of the type [Pd(mu-X)(4-eb-p-phen)](2) (X = Cl, Br, I, N-3, NCO, SCN) and 4-eb-p-phen [bis(4-ethylbenzyl)p-phenylenediimine]

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Surface potentials of corona-charged ferroelectric P(VDF-TrFE) copolymer samples

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Contribution of electrical parameters on the dynamical behaviour of a nonlinear electromagnetic damper

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Short-term expansion planning of radial electrical distribution systems using mixed-integer linear programming

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Studies on structural, morphological and electrical properties of Ce1-xErxO2-delta (x=0.05-0.20) as solid electrolyte for IT - SOFC

A series of four different powders ceria doped Ce1-xErxO2-delta (0.05 <= x <= 0.20) were synthesized by applying self-propagating reaction at room temperature (SPRT method). SPRT procedure is based on the self-propagating room temperature reaction between metal nitrates and sodium hydroxide, wherein the reaction is spontaneous and terminates extremely fast. The method is known to assure very precise stoichiometry of the final product in comparison with a tailored composition. XRPD, Raman spectroscopy, TEM and BET measurements were used to characterize the nanopowders at room temperature. It was shown that all obtained powders were single phase solid solutions with a fluorite-type crystal structure and all powder particles have nanometric size (about 3-4 nm). Densification was performed at 1550 degrees C, in an air atmosphere for 2 h. XRPD, SEM and complex impedance method measurements were carried out on sintered samples. Single phase form was evidenced for each sintered materials. The best value of conductivity at 700 degrees C amounted to 1.10 x 10(-2) Omega(-1) cm(-1) for Ce0.85Er0.O-3(2-delta) sample. Corresponding activation energies of conductivity amounted to 0.28 eV in the temperature range 500-700 degrees C. (C) 2015 Elsevier B.V. All rights reserved.

Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.