843 resultados para metallographic microstructure


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A study is presented of grain-boundary cavitation produced in Nimonic 80A by cold-deformation and stress-free annealing. The cavities were found to originate either from transverse cracking of carbide particles, or from decohesion of the particle-grain boundary interfaces. This decohesion could occur either during deformation, or during annealing. The cavities were invariably located at or close to the point of impingement of a matrix slip band on the grain boundary, but not all slip bands at a particular boundary were associated with cavitation. Quantitative evidence is presented showing that the mean number of dislocations associated with each slip band increases with macroscopic strain, but there is considerable variation between slip bands. This accounts for the differential ability of slip bands to result in cavity nucleation.

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We comment on the paper by N Hari Babu et al. (2002 Supercond. Sci. Technol. 15 104-10) and point out misinterpretations of the chemical composition of U-bearing deposits observed in Y123. The observed small deposits are those of new compounds which do not contain Cu, rather than refined Y211 plus U, as stated by the authors. We further note that extensive literature, not quoted, is in disagreement by nearly an order of magnitude concerning the values of Pt and U doping at which the optimum value of Jc is obtained. Other related information, presently in the literature, which may be helpful to those working with this high temperature superconducting chemical system, is presented.

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Melt grown Nd-Ba-Cu-O (NdBCO) has been reported to exhibit higher values of critical current density, Jc and irreversibility field, Hirr, than other (RE)BCO superconductors, such as YBCO. The microstructure of NdBCO typically contains 5-10 μm sized inclusions of the Nd4Ba2Cu2O10 phase (Nd-422) in a superconducting NdBa2Cu3O7-δ phase (Nd-123) matrix. The average size of these inclusions is characteristically larger than that of the Y2BaCuO5 (Y-211) inclusions in YBCO. As a result, there is scope to further refine the Nd-422 size to enhance Jc in NdBCO. Large grain samples of NdBCO superconductor doped with various amounts of depleted UO2 and containing excess Nd-422 have been fabricated by top seeded melt growth under reduced oxygen partial pressure. The effect of the addition of depleted UO2 on the NdBCO microstructure has been studied systematically in samples with and without added CeO2. It is observed that the addition of UO2 refines the NdBCO microstructure via the formation of uranium-containing phase particles in the superconducting matrix. These particles are of approximately spherical geometry with dimensions of around 1 μm. The average size of the nonsuperconducting phase particles in the uranium-doped microstructure is an order of magnitude less than their size in un-doped Nd-123 prepared with excess Nd-422. The critical current density of uranium-doped NdBCO is observed to increase significantly compared to the undoped material.

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Y-Ba-Cu-O (YBCO) single grains have the potential to generate large trapped magnetic fields for engineering applications, and research on the processing and properties of this material has attracted interest world-wide over the past 20 years. In particular, the introduction of flux pinning centers to the large grain microstructure to improve its current density Jc, and hence trapped field, has been investigated extensively. Y2Ba 4CuMO2 [Y-2411(M)], where M = Nb, Ta, Mo, W, Ru, Zr, Bi and Ag, has been discovered recently to form very effective flux pinning centers due primarily to its ability to form nano-size inclusions in the superconducting phase matrix. However, the addition of the Y-2411(M) phase to the precursor composition complicates the melt-processing of single grains. The addition of Y2O3 to the precursor composition, however, broadens the growth window of single YBCO grains containing Y-2411 (M). We report an investigation of the microstructures and superconducting properties of single grains of this composition grown by top seeded melt growth (TSMG). © 2010 IEEE.

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The microstructure and mechanical properties of sintered stainless steel powder, of composition AISI 420, have been measured. Ball-milled powder comprising nanoscale grains was sintered to bulk specimens by two alternative routes: hot-pressing and microlaser sintering. The laser-sintered alloy has a porosity of 6% and comprises a mixture of delta ferrite and tempered martensite, and the relative volume fraction varies along the axis of the specimen due to a thermal cycle that evolves with progressive deposition. In contrast, the hot-pressed alloy has a porosity of 0.7% and exhibits a martensitic lath structure with carbide particles at the boundaries of the prior austenite grains. These differences in microstructure lead to significant differences in mechanical properties. For example, the uniaxial tensile strength of the hot-pressed material is one-half of its compressive strength, due to void initiation at the carbide particles at the prior austenite grain boundaries. Nanoindentation measurements reveal a size effect in hardness and also reveal the sensitivity of hardness to the presence of mechanical polishing and electropolishing. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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We report on the preparation conditions of YBa2Cu3O7 polycrystalline superconducting tapes by a sol-gel deposition technique. We present some discussion on the compatibility between the nature of the substrate, the use of a buffer layer, and the conditions used to prepare appropriate superconducting YBa2Cu3O7 materials. We report also on the microstructural characterizations performed in order to evaluate the crystallites size, degree of orientation and connectivity. © 2002 Elsevier Science B.V. All rights reserved.

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Otolith microstructure of Oxygymnocypris stewartii collected from the Lhasa River was examined and described with regards to the early life history events. The monthly changes in the number of microincrements on the margin of the otolith were examined to validate the approximately daily periodicity of otolith increment formation. The microstructure of otoliths was used to detect changes in microincrement deposition patterns corresponding with events during early life. The annuli, microincrements and checks including the hatch check, yolk absorption check and several recurrent patterns in the otolith were described. Periodicity of the recurrent patterns was weekly, fortnightly and monthly. Through counting the number of the microincrements, it was confirmed that the primary growth of O. stewartii was in a period of 7 or 8 months from late March to October; it was estimated that O. stewartii might hatch between April and May.

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Reactive magnesia (MgO) was used as an alkali activator for ground granulated blast-furnace slag (GGBS) and its activating efficiency was investigated compared with hydrated lime. GGBS-MgO and GGBS-hydrated lime paste samples with different compositions and different water to solid ratios were prepared and cured for different periods. A range of tests was conducted to investigate the properties and microstructure of the pastes, including compressive strength, X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, energy dispersive X-ray and thermogravimetric analysis. The results showed that the reactive MgO acts as an effective alkali activator of GGBS, achieving higher 28-day compressive strength than that of the corresponding GGBS-hydrated lime system. The extensive microstructural investigation indicated that the main hydration product of reactive MgO-activated GGBS and hydrated lime-activated GGBS systems was hydrated calcium silicate, but there was much more hydrotalcite present in the former, which contributed to its superior 28-day compressive strength.

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order to investigate the morphological response of freshwater green algae to elevated CO2 concentration, Chlamydomonas reinhardtii Dang and Scenedesmus obliquus Kutz were cultured with enriched CO2, and their microstructure and ultrastructure were examined by microscopy and electron microscopy. The effect of CO2 enrichment to 186 mumol/L, was insignificant on the shape and size of C. reinhardtii, but significant in reducing the volume of S. obliquus. High-CO2 increased the amount of chloroplast. The pyrenoids occurred in low-CO2-grown cells but not in high-CO2-grown ones and more starch granules were observed in the former.

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This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

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Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

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The density of states (DOS) above Fermi level of hydrogenated microcrystalline silicon (mu c-Si H) films is correlated to the material microstructure. We use Raman scattering and infrared absorption spectra to characterize the structure of the films made with different hydrogen dilution ratios. The DOS of the films is examined by modulated photocurrent measurement. The results have been accounted for in the framework of a three-phase model comprised of amorphous and crystalline components, with the grain boundary as the third phase. We observed that the DOS increases monotonically as the grain boundary volume fractions f(gb) is increased, which indicates a positive correlation between the DOS and the grain boundary volume fraction.

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We explored the deposition of hydrogenated amorphous silicon (a-Si: H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of similar to 1.5 for the same hydrogen dilution (R = [H-2]/[Si3H8] or [H-2]/[Si2H6])- Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si: H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (V-oc) on hydrogen dilution was investigated. V-oc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.