Study of multiferroic materials

The present PhD work aims the research and development of materials that exhibit multiferroic properties, in particular having a significant interaction between ferromagnetism and ferroelectricity; either directly within an intrinsic single phase or by combining extrinsic materials, achieving the coupling of properties through mechanic phenomena of the respective magnetostriction and piezoelectricity. These hybrid properties will allow the cross modification of magnetic and electric polarization states by the application of cross external magnetic and/or electric fields, giving way to a vast area for scientific investigation and potential technological applications in a new generation of electronic devices, such as computer memories, signal processing, transducers, sensors, etc. Initial experimental work consisted in chemical synthesis of nano powders oxides by urea pyrolysis method: A series of ceramic bulk composites with potential multiferroic properties comprised: of LuMnO3 with La0.7Sr0.3MnO3 and BaTiO3 with La0.7Ba0.3MnO3; and a series based on the intrinsic multiferroic LuMn1-zO3 phase modified with of Manganese vacancies. The acquisition of a new magnetron RF sputtering deposition system, in the Physics Department of Aveiro University, contributed to the proposal of an analogous experimental study in multiferroic thin films and multilayer samples. Besides the operational debut of this equipment several technical upgrades were completed like: the design and construction of the heater electrical contacts; specific shutters and supports for the magnetrons and for the substrate holder and; the addition of mass flow controllers, which allowed the introduction of N2 or O2 active atmosphere in the chamber; and the addition of a second RF generator, enabling co-deposition of different targets. Base study of the deposition conditions and resulting thin films characteristics in different substrates was made from an extensive list of targets. Particular attention was given to thin film deposition of magnetic phases La1-xSrxMnO3, La1-xBaxMnO3 and Ni2+x-yMn1-xGa1+y alloy, from the respective targets: La0.7Sr0.3MnO3, La0.7Ba0.3MnO3; and NiGa with NiMn. Main structural characterization of samples was performed by conventional and high resolution X-Ray Diffraction (XRD); chemical composition was determined by Electron Dispersion Spectroscopy (EDS); magnetization measurements recur to a Vibrating Sample Magnetometer (VSM) prototype; and surface probing (SPM) using Magnetic-Force (MFM) and Piezo-Response (PFM) Microscopy. Results clearly show that the composite bulk samples (LuM+LSM and BTO+LBM) feat the intended quality objectives in terms of phase composition and purity, having spurious contents below 0.5 %. SEM images confirm compact grain packaging and size distribution around the 50 nm scale. Electric conductivity, magnetization intensity and magneto impedance spreading response are coherent with the relative amount of magnetic phase in the sample. The existence of coupling between the functional phases is confirmed by the Magnetoelectric effect measurements of the sample “78%LuM+22%LSM” reaching 300% of electric response for 1 T at 100 kHz; while in the “78%BTO+22%LBM” sample the structural transitions of the magnetic phase at ~350 K result in a inversion of ME coefficient the behavior. A functional Magneto-Resistance measurement system was assembled from the concept stage until the, development and operational status; it enabled to test samples from 77 to 350 K, under an applied magnetic field up to 1 Tesla with 360º horizontal rotation; this system was also designed to measure Hall effect and has the potential to be further upgraded. Under collaboration protocols established with national and international institutions, complementary courses and sample characterization studies were performed using Magneto-Resistance (MR), Magneto-Impedance (MZ) and Magneto-Electric (ME) measurements; Raman and X-ray Photoelectron Spectroscopy (XPS); SQUID and VSM magnetization; Scanning Electron Microscopy (SEM) and Rutherford Back Scattering (RBS); Scan Probe Microscopy (SPM) with Band Excitation Probe Spectroscopy (BEPS); Neutron Powder Diffraction (NPD) and Perturbed Angular Correlations (PAC). Additional collaboration in research projects outside the scope of multiferroic materials provided further experience in sample preparation and characterization techniques, namely VSM and XPS measurements were performed in cubane molecular complex compounds and enable to identify the oxidation state of the integrating cluster of Ru ions; also, XRD and EDS/SEM analysis of the acquired targets and substrates implied the devolution of some items not in conformity with the specifications. Direct cooperation with parallel research projects regarding multiferroic materials, enable the assess to supplementary samples, namely a preliminary series of nanopowder Y1-x-yCaxØyMn1O3 and of Eu0.8Y0.2MnO3, a series of micropowder composites of LuMnO3 with La0.625Sr0.375MnO3 and of BaTiO3 with hexagonal ferrites; mono and polycrystalline samples of Pr1-xCaxMnO3, La1-xSrxMnO3 and La1-xCaxMnO3.

Nonlinear behavioral modeling of mixed signal RF-digital I/O devices

Esta tese investiga a caracterização (e modelação) de dispositivos que realizam o interface entre os domínios digital e analógico, tal como os buffers de saída dos circuitos integrados (CI). Os terminais sem fios da atualidade estão a ser desenvolvidos tendo em vista o conceito de rádio-definido-por-software introduzido por Mitola. Idealmente esta arquitetura tira partido de poderosos processadores e estende a operação dos blocos digitais o mais próximo possível da antena. Neste sentido, não é de estranhar que haja uma crescente preocupação, no seio da comunidade científica, relativamente à caracterização dos blocos que fazem o interface entre os domínios analógico e digital, sendo os conversores digital-analógico e analógico-digital dois bons exemplos destes circuitos. Dentro dos circuitos digitais de alta velocidade, tais como as memórias Flash, um papel semelhante é desempenhado pelos buffers de saída. Estes realizam o interface entre o domínio digital (núcleo lógico) e o domínio analógico (encapsulamento dos CI e parasitas associados às linhas de transmissão), determinando a integridade do sinal transmitido. Por forma a acelerar a análise de integridade do sinal, aquando do projeto de um CI, é fundamental ter modelos que são simultaneamente eficientes (em termos computacionais) e precisos. Tipicamente a extração/validação dos modelos para buffers de saída é feita usando dados obtidos da simulação de um modelo detalhado (ao nível do transístor) ou a partir de resultados experimentais. A última abordagem não envolve problemas de propriedade intelectual; contudo é raramente mencionada na literatura referente à caracterização de buffers de saída. Neste sentido, esta tese de Doutoramento foca-se no desenvolvimento de uma nova configuração de medição para a caracterização e modelação de buffers de saída de alta velocidade, com a natural extensão aos dispositivos amplificadores comutados RF-CMOS. Tendo por base um procedimento experimental bem definido, um modelo estado-da-arte é extraído e validado. A configuração de medição desenvolvida aborda não apenas a integridade dos sinais de saída mas também do barramento de alimentação. Por forma a determinar a sensibilidade das quantias estimadas (tensão e corrente) aos erros presentes nas diversas variáveis associadas ao procedimento experimental, uma análise de incerteza é também apresentada.

All-optical routing functionalities

All-optical solutions for switching and routing packet-based traffic are crucial for realizing a truly transparent network. To meet the increasing requirements for higher bandwidth, such optical packet switched networks may require the implementation of digital functions in the physical layer. This scenario stimulated us to research and develop innovative high-speed all-optical storage memories, focusing mainly on bistables whose state switching is triggered by a pulsed clock signal. In clocked devices, a synchronization signal is responsible for controlling the enabling of the bistable. This thesis also presents novel solutions to implement optical logic gates, which are basic building blocks of any processing system and a fundamental element for the development of complex processing functionalities. Most of the proposed schemes developed in this work are based on SOA-MZI structures due to their inherent characteristics such as, high extinction ratio, high operation speed, high integration capability and compactness. We addressed the experimental implementation of an all-optical packet routing scheme, with contention resolution capability, using interconnected SOAMZIs. The impact on the system performance of the reminiscent power of the blocked packets, from the non ideal switching performed by the SOA-MZIs, was also assessed.

Para uma interpretação na guitarra das sonatas BMW 1001/1003/1005 de Bach inspirada numa memorabília das práticas interpretativas

O presente trabalho procura compreender as abordagens interpretativas desenvolvidas na guitarra das sonatas para violino BWV 1001, 1003 e 1005 de Bach e apresenta uma proposta de interpretação inspirada no autógrafo original. Sistematiza características de transcrições e gravações das obras no instrumento, e considera as respectivas inferências interpretativas. Face ao significativo número de autores e intérpretes que, adaptando o texto de Bach, privilegiam a faceta harmónica da guitarra e desvalorizam o uso de recursos expressivos da prática interpretativa barroca implícitos e explícitos na notação, problematiza os desafios colocados a uma interpretação num instrumento harmónico que mantém o texto escrito para um outro predominantemente melódico, e faz da articulação o seu centro, facultando propostas de realização. O texto de Bach para violino, as práticas barrocas e o legado dos discursos interpretativos sobre as obras integram o repositório de memórias que inspiraram e fundamentaram a criação de uma interpretação. Nela se tomam opções estéticas e encontram as respectivas soluções de realização técnica na sequência da procura de novos caminhos interpretativos, através da recuperação de alguns aspectos que teriam tido expressão numa imaginária interpretação oitocentista – criando uma outra memória.

Ferroelectric : CNTs structures fabrication for advanced functional nano devices

This work is about the combination of functional ferroelectric oxides with Multiwall Carbon Nanotubes for microelectronic applications, as for example potential 3 Dimensional (3D) Non Volatile Ferroelectric Random Access Memories (NVFeRAM). Miniaturized electronics are ubiquitous now. The drive to downsize electronics has been spurred by needs of more performance into smaller packages at lower costs. But the trend of electronics miniaturization challenges board assembly materials, processes, and reliability. Semiconductor device and integrated circuit technology, coupled with its associated electronic packaging, forms the backbone of high-performance miniaturized electronic systems. However, as size decreases and functionalization increases in the modern electronics further size reduction is getting difficult; below a size limit the signal reliability and device performance deteriorate. Hence miniaturization of siliconbased electronics has limitations. On this background the Road Map for Semiconductor Industry (ITRS) suggests since 2011 alternative technologies, designated as More than Moore; being one of them based on carbon (carbon nanotubes (CNTs) and graphene) [1]. CNTs with their unique performance and three dimensionality at the nano-scale have been regarded as promising elements for miniaturized electronics [2]. CNTs are tubular in geometry and possess a unique set of properties, including ballistic electron transportation and a huge current caring capacity, which make them of great interest for future microelectronics [2]. Indeed CNTs might have a key role in the miniaturization of Non Volatile Ferroelectric Random Access Memories (NVFeRAM). Moving from a traditional two dimensional (2D) design (as is the case of thin films) to a 3D structure (based on a tridimensional arrangement of unidimensional structures) will result in the high reliability and sensing of the signals due to the large contribution from the bottom electrode. One way to achieve this 3D design is by using CNTs. Ferroelectrics (FE) are spontaneously polarized and can have high dielectric constants and interesting pyroelectric, piezoelectric, and electrooptic properties, being a key application of FE electronic memories. However, combining CNTs with FE functional oxides is challenging. It starts with materials compatibility, since crystallization temperature of FE and oxidation temperature of CNTs may overlap. In this case low temperature processing of FE is fundamental. Within this context in this work a systematic study on the fabrication of CNTs - FE structures using low cost low temperature methods was carried out. The FE under study are comprised of lead zirconate titanate (Pb1-xZrxTiO3, PZT), barium titanate (BaTiO3, BT) and bismuth ferrite (BiFeO3, BFO). The various aspects related to the fabrication, such as effect on thermal stability of MWCNTs, FE phase formation in presence of MWCNTs and interfaces between the CNTs/FE are addressed in this work. The ferroelectric response locally measured by Piezoresponse Force Microscopy (PFM) clearly evidenced that even at low processing temperatures FE on CNTs retain its ferroelectric nature. The work started by verifying the thermal decomposition behavior under different conditions of the multiwall CNTs (MWCNTs) used in this work. It was verified that purified MWCNTs are stable up to 420 ºC in air, as no weight loss occurs under non isothermal conditions, but morphology changes were observed for isothermal conditions at 400 ºC by Raman spectroscopy and Transmission Electron Microscopy (TEM). In oxygen-rich atmosphere MWCNTs started to oxidized at 200 ºC. However in argon-rich one and under a high heating rate MWCNTs remain stable up to 1300 ºC with a minimum sublimation. The activation energy for the decomposition of MWCNTs in air was calculated to lie between 80 and 108 kJ/mol. These results are relevant for the fabrication of MWCNTs – FE structures. Indeed we demonstrate that PZT can be deposited by sol gel at low temperatures on MWCNTs. And particularly interesting we prove that MWCNTs decrease the temperature and time for formation of PZT by ~100 ºC commensurate with a decrease in activation energy from 68±15 kJ/mol to 27±2 kJ/mol. As a consequence, monophasic PZT was obtained at 575 ºC for MWCNTs - PZT whereas for pure PZT traces of pyrochlore were still present at 650 ºC, where PZT phase formed due to homogeneous nucleation. The piezoelectric nature of MWCNTs - PZT synthesised at 500 ºC for 1 h was proved by PFM. In the continuation of this work we developed a low cost methodology of coating MWCNTs using a hybrid sol-gel / hydrothermal method. In this case the FE used as a proof of concept was BT. BT is a well-known lead free perovskite used in many microelectronic applications. However, synthesis by solid state reaction is typically performed around 1100 to 1300 ºC what jeopardizes the combination with MWCNTs. We also illustrate the ineffectiveness of conventional hydrothermal synthesis in this process due the formation of carbonates, namely BaCO3. The grown MWCNTs - BT structures are ferroelectric and exhibit an electromechanical response (15 pm/V). These results have broad implications since this strategy can also be extended to other compounds of materials with high crystallization temperatures. In addition the coverage of MWCNTs with FE can be optimized, in this case with non covalent functionalization of the tubes, namely with sodium dodecyl sulfate (SDS). MWCNTs were used as templates to grow, in this case single phase multiferroic BFO nanorods. This work shows that the use of nitric solvent results in severe damages of the MWCNTs layers that results in the early oxidation of the tubes during the annealing treatment. It was also observed that the use of nitric solvent results in the partial filling of MWCNTs with BFO due to the low surface tension (<119 mN/m) of the nitric solution. The opening of the caps and filling of the tubes occurs simultaneously during the refluxing step. Furthermore we verified that MWCNTs have a critical role in the fabrication of monophasic BFO; i.e. the oxidation of CNTs during the annealing process causes an oxygen deficient atmosphere that restrains the formation of Bi2O3 and monophasic BFO can be obtained. The morphology of the obtained BFO nano structures indicates that MWCNTs act as template to grow 1D structure of BFO. Magnetic measurements on these BFO nanostructures revealed a week ferromagnetic hysteresis loop with a coercive field of 956 Oe at 5 K. We also exploited the possible use of vertically-aligned multiwall carbon nanotubes (VA-MWCNTs) as bottom electrodes for microelectronics, for example for memory applications. As a proof of concept BiFeO3 (BFO) films were in-situ deposited on the surface of VA-MWCNTs by RF (Radio Frequency) magnetron sputtering. For in situ deposition temperature of 400 ºC and deposition time up to 2 h, BFO films cover the VA-MWCNTs and no damage occurs either in the film or MWCNTs. In spite of the macroscopic lossy polarization behaviour, the ferroelectric nature, domain structure and switching of these conformal BFO films was verified by PFM. A week ferromagnetic ordering loop was proved for BFO films on VA-MWCNTs having a coercive field of 700 Oe. Our systematic work is a significant step forward in the development of 3D memory cells; it clearly demonstrates that CNTs can be combined with FE oxides and can be used, for example, as the next 3D generation of FERAMs, not excluding however other different applications in microelectronics.

Eterno presente, o tempo na contemporaniedade

Tese dout., Literatura, Universidade do Algarve, 2008

Da memória do povo - Recolha de literatura popular da tradição oral do Concelho de Portimão

Margarida Tengarrinha oferece - nos, nesta obra, um leque bastante diversificado do património, adentro das “artes da fala”, correndo nas memórias do povo do concelho de Portimão. O fruto da sua recolecção, os “textos” que recebeu, transcreveu e estudou, é aqui editado com uma valência, cremos,, primeiro que tudo pedagógica. Assim, os textos agrupam - se por “manchas de leitura” com uma coerência interna aglutinadora, aparecendo ordenados sob uma classificação entre formal — segundo os “géneros”, como “contos” , “lendas”, “romances”, “orações”, por exemplo — e temática — por “fundos de sentido” semantizados nas comunicações: “bruxas e bruxedos”, “benzeduras, mezinhas, maldições e superstições”, “poesias maliciosas”, por exemplo.

Dissociação entre memória prospectiva e memória retrospectiva numa população idosa: contributo para a validação do PRMQ

Este estudo teve como objectivo contribuir para a validação do questionário de auto- relato de défices de Memória Prospectiva e Retrospectiva (PRMQ) na população Portuguesa idosa e sem défices objectivos de memória. No âmbito desta validação realizámos uma estatística descritiva dos resultados obtidos por grupos de idade, escolaridade e de género em todos os parâmetros utilizados na investigação e analisámos os factores individuais e os testes neuropsicológicos que mais se associaram com os relatos de défices nas Memórias Prospectiva e Retrospectiva. Participaram no estudo 45 pessoas com idades compreendidas entre os 50 e os 91 anos e foram utilizadas escalas para avaliar as queixas de memória, a sintomatologia depressiva e ansiogénica. Também foram utilizados testes Neuropsicológicos para avaliação objetiva da memória, nomeadamente avaliação da capacidade de evocação de informação recente (Memória Lógica) e aprendizagem bem como avaliação da função executiva. Em conclusão, poder-se-á afirmar que o grupo de médias de idade mais elevada foi aquele que relatou mais queixas subjectivas de memória, não se tendo observado qualquer tipo de dissociação entre a MP e a MR, nem diferenças significativas nos resultados obtidos entre géneros em nenhum dos parâmetros avaliados na investigação.

Estudo das características da memória autobiográfica em idosos com e sem sintomatologia depressiva

Como objetivo neste estudo procurámos compreender numa população de idosos, com e sem sintomatologia depressiva, as características das memórias autobiográficas (MA’s), nomeadamente o seu padrão de evocação ao longo da vida, o grau de abstração das MA’s evocadas, o efeito de congruência do humor e a superioridade dos tempos de resposta na evocação de MA’s. A amostra do estudo foi selecionada através de um método não-probabilístico por conveniência, sendo constituída por 33 participantes posteriormente agrupados de acordo com a gravidade da sintomatologia depressiva (16 participantes sem diagnóstico de sintomatologia depressiva (SD) e 17 com depressão (CD) com idades entre os 65 e os 93 anos e ausência de alterações cognitivas). Foram aplicados a subescala de Depressão do Questionário Symptoms Check List (SCL-90) (Derogatis & Cleary, 1977, traduzido e adaptado por Baptista, 1993; Pereira, 2011) e o Teste de Memória Autobiográfica (TMA) (Williams & Broadbent, 1986, traduzido por Bobrowicz-Campos, Pinho & Matos, 2010). Os resultados evidenciaram diferenças quantitativas na evocação de MA’s ao longo do ciclo de vida dos indivíduos confirmando resultados prévios. Verificou-se também que os indivíduos sem depressão evocam mais MA’s específicas comparativamente aos sujeitos com depressão, embora a diferença não seja estatisticamente significativa. Observou-se que o grupo CD apresentou uma maior frequência de evocação de associados semânticos/não respostas a palavras-pista positivas comparativamente ao grupo SD, corroborando a existência de um efeito de congruência do humor. Por fim, registaram-se menores tempos de resposta até à evocação de MA, independentemente da valência da palavra-pista, com o aumento da depressão, contrariando a ideia de lentificação cognitiva no processamento de informação. As conclusões deste estudo incentivam a continuação da compreensão da influência da depressão em idosos e incitam a implementação de estratégias psicológicas e estruturas de apoio a este grupo etário.

Electrical characterization of metal-oxide-polymer devices for non-volatile memory applications

The objective of this thesis is to study the properties of resistive switching effect based on bistable resistive memory which is fabricated in the form of Al2O3/polymer diodes and to contribute to the elucidation of resistive switching mechanisms. Resistive memories were characterized using a variety of electrical techniques, including current-voltage measurements, small-signal impedance, and electrical noise based techniques. All the measurements were carried out over a large temperature range. Fast voltage ramps were used to elucidate the dynamic response of the memory to rapid varying electric fields. The temperature dependence of the current provided insight into the role of trapped charges in resistive switching. The analysis of fast current fluctuations using electric noise techniques contributed to the elucidation of the kinetics involved in filament formation/rupture, the filament size and correspondent current capabilities. The results reported in this thesis provide insight into a number of issues namely: (i) The fundamental limitations on the speed of operation of a bi-layer resistive memory are the time and voltage dependences of the switch-on mechanism. (ii) The results explain the wide spread in switching times reported in the literature and the apparently anomalous behaviour of the high conductance state namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon which had remained elusive since it was first reported in the ‘60s. (iii) Assuming that the current is filamentary, Comsol simulations were performed and used to explain the observed dynamic properties of the current-voltage characteristics. Furthermore, the simulations suggest that filaments can interact with each other. (iv) The current-voltage characteristics have been studied as a function of temperature. The findings indicate that creation and annihilation of filaments is controlled by filling and neutralizing traps localized at the oxide/polymer interface. (v) Resistive switching was also studied in small-molecule OLEDs. It was shown that the degradation that leads to a loss of light output during operation is caused by the presence of a resistive switching layer. A diagnostic tool that predicts premature failure of OLEDs was devised and proposed. Resistive switching is a property of oxides. These layers can grow in a number of devices including, organic light emitting diodes (OLEDs), spin-valve transistors and photovoltaic devices fabricated in different types of material. Under strong electric fields the oxides can undergo dielectric breakdown and become resistive switching layers. Resistive switching strongly modifies the charge injection causing a number of deleterious effects and eventually device failure. In this respect the findings in this thesis are relevant to understand reliability issues in devices across a very broad field.

A Academia Real das Ciências de Lisboa (1779-1834) : ciências e hibridismo numa periferia europeia

Tese de doutoramento, História e Filosofia das Ciências, Universidade de Lisboa, Faculdade de Ciências, 2015

A aprendizagem da noção de derivada no 11º ano

Relatório da prática de ensino supervisionada, Mestrado em Ensino da Matemática, Universidade de Lisboa, 2014

História da ilha do Faial (das origens a 1833): Património Arquivístico

Este volume da História da Ilha do Faial dá continuidade ao projecto de cooperação estabelecido com a Universidade dos Açores, através do Centro de Estudos Gaspar Frutuoso e o seu lançamento insere-se no 180º aniversário da cidade da Horta, assinalado a 4 de Julho.

Sistema de reconhecimento de impressões digitais baseado em FPGA

Trabalho de Projeto para obtenção do grau de Mestre em Engenharia de Eletrónica e Telecomunicações