Explicit Expressions for Solar Panel Equivalent Circuit Parameters Based on Analytical Formulation and the Lambert W-Function

Due to the high dependence of photovoltaic energy efficiency on environmental conditions (temperature, irradiation...), it is quite important to perform some analysis focusing on the characteristics of photovoltaic devices in order to optimize energy production, even for small-scale users. The use of equivalent circuits is the preferred option to analyze solar cells/panels performance. However, the aforementioned small-scale users rarely have the equipment or expertise to perform large testing/calculation campaigns, the only information available for them being the manufacturer datasheet. The solution to this problem is the development of new and simple methods to define equivalent circuits able to reproduce the behavior of the panel for any working condition, from a very small amount of information. In the present work a direct and completely explicit method to extract solar cell parameters from the manufacturer datasheet is presented and tested. This method is based on analytical formulation which includes the use of the Lambert W-function to turn the series resistor equation explicit. The presented method is used to analyze commercial solar panel performance (i.e., the current-voltage–I-V–curve) at different levels of irradiation and temperature. The analysis performed is based only on the information included in the manufacturer’s datasheet.

Explicit expressions for solar panel equivalent circuit parameters based on analytical formulation and the Lambert W - Function

Due to the high dependence of photovoltaic energy efficiency on environmental conditions (temperature, irradiation...), it is quite important to perform some analysis focusing on the characteristics of photovoltaic devices in order to optimize energy production, even for small-scale users. The use of equivalent circuits is the preferred option to analyze solar cells/panels performance. However, the aforementioned small-scale users rarely have the equipment or expertise to perform large testing/calculation campaigns, the only information available for them being the manufacturer datasheet. The solution to this problem is the development of new and simple methods to define equivalent circuits able to reproduce the behavior of the panel for any working condition, from a very small amount of information. In the present work a direct and completely explicit method to extract solar cell parameters from the manufacturer datasheet is presented and tested. This method is based on analytical formulation which includes the use of the Lambert W-function to turn the series resistor equation explicit. The presented method is used to analyze the performance (i.e., the I - V curve) of a commercial solar panel at different levels of irradiation and temperature. The analysis performed is based only on the information included in the manufacturer's datasheet.

Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell

It has been proposed that the use of self-assembled quantum dot (QD) arrays can break the Shockley-Queisser efficiency limit by extending the absorption of solar cells into the low-energy photon range while preserving their output voltage. This would be possible if the infrared photons are absorbed in the two sub-bandgap QD transitions simultaneously and the energy of two photons is added up to produce one single electron-hole pair, as described by the intermediate band model. Here, we present an InAs/Al 0.25Ga 0.75As QD solar cell that exhibits such electrical up-conversion of low-energy photons. When the device is monochromatically illuminated with 1.32 eV photons, open-circuit voltages as high as 1.58 V are measured (for a total gap of 1.8 eV). Moreover, the photocurrent produced by illumination with photons exciting the valence band to intermediate band (VB-IB) and the intermediate band to conduction band (IB-CB) transitions can be both spectrally resolved. The first corresponds to the QD inter-band transition and is observable for photons of energy mayor que 1 eV, and the later corresponds to the QD intra-band transition and peaks around 0.5 eV. The voltage up-conversion process reported here for the first time is the key to the use of the low-energy end of the solar spectrum to increase the conversion efficiency, and not only the photocurrent, of single-junction photovoltaic devices. In spite of the low absorption threshold measured in our devices - 0.25 eV - we report open-circuit voltages at room temperature as high as 1.12 V under concentrated broadband illumination.

Sistema portátil de medida de dispositivos sometidos a ensayos en campo

El proyecto fin de carrera “Sistema Portátil de Medida de Dispositivos Sometidos a Ensayos en Campo” es un proyecto acometido para el desarrollo y evaluación de un sistema de medición portátil y confiable, que permita la realización de mediciones de curvas I-V en campo, en condiciones reales de funcionamiento. Dado que la finalidad de este proyecto fin de carrera es la obtención de un sistema para la realización de mediciones en campo, en la implementación del proyecto se tendrán como requisitos principales de diseño el tamaño, la fuente de alimentación, el peso del sistema, además de la fiabilidad y una relativa precisión en la realización de mediciones. Durante la realización de este proyecto y dados los requerimientos anteriores de portabilidad y fiabilidad, se ha buscado ofrecer una solución de compromiso diseñando un equipamiento que sea realizable, que cumpla con los objetivos anteriores con un coste que no sea elevado y con la característica de que disponga de una facilidad de manejo que permita a cualquier usuario la utilización del mismo. El sistema final diseñado está basado en el dispositivo de adquisición de datos MyDAQ de National Instruments que permite la realización de múltiples tipos de mediciones. En base a este dispositivo de adquisición de datos, se ha diseñado un sistema de medición con una arquitectura que se implementa a través de un ordenador portátil, con un software de medición instalado que recopila e interpreta los datos, y que alimenta y controla al dispositivo a través del puerto USB. El sistema también implementa una carga variable que permite la medición de la curva I-V en iluminación de células o mini-paneles fotovoltaicos. Este diseño permite que para la realización de las mediciones de las curvas I-V en iluminación en campo sólo se requiera conectar el dispositivo de adquisición a un PC portátil con batería y a la carga variable. Aunque este diseño es específico para la medición de células solares se ha implementado de forma que pueda extrapolarse fácilmente a otro tipo de medición de tensión y corriente. Para la comprobación de la precisión del sistema portátil de medidas, durante el proyecto se ha procedido a la comparación de los resultados obtenidos del sistema diseñado con un equipo de caracterización en laboratorio. Dicho sistema de alta exactitud permite cuantificar la degradación real de la célula y establecer una comparación de mediciones con el sistema portátil de medida, ofreciendo resultados satisfactorios en todas las mediciones realizadas y permitiendo concluir la evaluación del sistema portátil como apto para las mediciones de dispositivos en campo. El proceso de evaluación del equipamiento diseñado consistiría en la medida de la curva I-V en laboratorio de un dispositivo fotovoltaico con instrumentación de alta precisión y condiciones controladas de luz y temperatura de un dispositivo, célula o mini-panel. Tras la medida inicial las células se instalarían en campo y se realizaría una caracterización periódica de los dispositivos mediante el sistema portátil de medida, que permitiría evidenciar si en la curva I-V bajo iluminación existe degradación, y en qué zona de la curva. Al finalizar el ensayo o en periodos intermedios se desmontarían los dispositivos para volver a medir la curva I-V con exactitud en laboratorio. Por tanto el sistema portátil de medida, debe permitir evaluar la evolución de la curva I-V en condiciones ambientales similares a obtenidas en medidas anteriores, y a partir de la misma determinar el modo de degradación del dispositivo, no siendo necesaria una elevada precisión de medida para ofrecer resultados exactos de degradación, que sólo podrán medirse en el laboratorio. ABSTRACT. The final degree project "Portable Measurement System For Devices Under Field Tests" is a project undertaken for the development and evaluation of portable and reliable measurement equipment, which allows the realization of I-V curve measurements in field conditions actual operation. Since the purpose of this final project is to obtain a system for conducting field measurements in the implementation of the project will have as main design requirements for size, power supply, system weight, plus reliability and precision relative to the taking of measurements. During the development of this project and given the above requirements portability and reliability, has sought to offer a compromise designing equipment that is achievable, that meets the above objectives with a cost that is not high and the feature that available management facility that allows any user to use it. The final system is designed based on the acquisition device MyDAQ NI data that allows the execution of multiple types of measurements. Based on this data acquisition device, we have designed a measurement system with an architecture that is implemented via a laptop, with measurement software installed that collects and interprets data, and feeds and controls the device through the USB port. The system also implements a variable load which allows measurement of the I-V curve lighting photovoltaic cells. This design allows performing measurements of I-V curves in lighting field is only required to connect the device to purchase a laptop with a battery and variable load. Although this design is specific for the measurement of solar cells has been implemented so that it can easily be extrapolated to other types of measuring voltage and current. To test the accuracy of the portable measurement system during the project has been carried out to compare the results of the designed system, a team of laboratory characterization. This system of high accuracy to quantify the actual degradation of the cell and a comparison of measurements with portable measurement system, providing satisfactory results in all measurements and allowing complete portable system assessment as suitable for measurements of devices field. The evaluation process designed equipment would be far laboratory I-V curve of a photovoltaic device with high precision instrumentation controlled light and temperature of a device, panel or mini-cell conditions. After initial measurement cells settle in a periodic field and device characterization will be achieved through the portable measurement system, which would show whether the I-V curve under illumination degradation exists, and in which area of the curve. At the end of the trial or in interim periods devices to remeasure the I-V curve accurately in laboratory dismount. Therefore the portable measurement system should allow evaluating the evolution of the I-V curve similar to previous measurements obtained in ambient conditions, and from it determine the mode of degradation of the device, not a high measurement accuracy to be necessary to provide degradation accurate results, which can only be measured in the laboratory.

Accurate Simulation of MPPT Methods Performance When Applied to Commercial Photovoltaic Panels

Anew, simple, and quick-calculationmethodology to obtain a solar panel model, based on the manufacturers’ datasheet, to perform MPPT simulations, is described. The method takes into account variations on the ambient conditions (sun irradiation and solar cells temperature) and allows fast MPPT methods comparison or their performance prediction when applied to a particular solar panel. The feasibility of the described methodology is checked with four different MPPT methods applied to a commercial solar panel, within a day, and under realistic ambient conditions.

Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar cells. Particularly, stacking QD layers allows exploiting their unique properties, not only for intermediate-band solar cells or multiple exciton generation, but also for tandem cells in which the tunability of QD properties through the capping layer (CL) could be very useful.

Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Different approaches have recently arisen aiming to exceed the Shockley-Queisser efficiency limit. Particularly, the use of self-organized quantum dots (QD) has been recently proposed in order to introduce new states within the barrier material, which enhances the subband gap absorption yielding a photocurrent increase. Stacking QD layers allows exploiting their unique properties for intermediate-band solar cells (SC) or tandem cells.In all these cases, tuning the QD properties by modifying the capping layer (CL) can be very useful.

Analysis of SnS2 hyperdoped with V proposed as efficient absorber material

Intermediate-band materials can improve the photovoltaic efficiency of solar cells through the absorption of two subband-gap photons that allow extra electron-hole pair formations. Previous theoretical and experimental findings support the proposal that the layered SnS2 compound, with a band-gap of around 2 eV, is a candidate for an intermediate-band material when it is doped with a specific transition-metal. In this work we characterize vanadium doped SnS2 using density functional theory at the dilution level experimentally found and including a dispersion correction combined with the site-occupancy-disorder method. In order to analyze the electronic characteristics that depend on geometry, two SnS2 polytypes partially substituted with vanadium in symmetry-adapted non-equivalent configurations were studied. In addition the magnetic configurations of vanadium in a SnS2 2H-polytype and its comparison with a 4H-polytype were also characterized. We demonstrate that a narrow intermediate-band is formed, when these dopant atoms are located in different layers. Our theoretical predictions confirm the recent experimental findings in which a paramagnetic intermediate-band material in a SnS2 2H-polytype with 10% vanadium concentration is obtained.

Spectral study and classification of worldwide locations considering several multijunction solar cell technologies

Multi-junction solar cells are widely used in high-concentration photovoltaic systems (HCPV) attaining the highest efficiencies in photovoltaic energy generation. This technology is more dependent on the spectral variations of the impinging Direct Normal Irradiance (DNI) than conventional photovoltaics based on silicon solar cells and consequently demands a deeper knowledge of the solar resource characteristics. This article explores the capabilities of spectral indexes, namely, spectral matching ratios (SMR), to spectrally characterize the annual irradiation reaching a particular location on the Earth and to provide the necessary information for the spectral optimization of a MJ solar cell in that location as a starting point for CPV module spectral tuning. Additionally, the relationship between such indexes and the atmosphere parameters, such as the aerosol optical depth (AOD), precipitable water (PW), and air mass (AM), is discussed using radiative transfer models such as SMARTS to generate the spectrally-resolved DNI. The network of ground-based sun and sky-scanning radiometers AERONET (AErosol RObotic NETwork) is exploited to obtain the atmosphere parameters for a selected bunch of 34 sites worldwide. Finally, the SMR indexes are obtained for every location, and a comparative analysis is carried out for four architectures of triple junction solar cells, covering both lattice match and metamorphic technologies. The differences found among cell technologies are much less significant than among locations.

Improving Optical Performance of Concentrator Cells by Means of a Deposited Nanopattern Layer

Multijunction solar cells (MJSC) use anti-reflective coatings (ARC) to minimize Fresnel reflection losses for a family of light incidence angles. These coatings adapt the refractive index of the cell to that of the surrounding medium. Patterns with sizes in the range of the light wavelength can be used to further reduce reflections through diffraction. Transparent nanopatterns with a gradual profile, called moth-eye nanostructures, can adapt the refractive index of the optical interfaces (often with n∼1.5) used to encapsulate concentrator solar cells to that of the air (n air∼1). Here we show the effect of a nanometric moth-eye ARC with a round motif deposited on commercial MJSC that achieves short-circuit current (I SC) gains greater than 2% at normal incidence and even higher in the case of tilted illumination. In this work, MJSC with different moth-eye ARC are characterized under quantum efficiency (QE) as well as under concentrated illumination I-V in order to assess their potential. Simulations based on coupled wave analysis (RCWA) are used to fit the experimental results with successful results.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Oxide Semiconductors For Organic Opto-electronic Devices

Development of transparent oxide semiconductors (TOS) from Earth-abundant materials is of great interest for cost-effective thin film device applications, such as solar cells, light emitting diodes (LEDs), touch-sensitive displays, electronic paper, and transparent thin film transistors. The need of inexpensive or high performance electrode might be even greater for organic photovoltaic (OPV), with the goal to harvest renewable energy with inexpensive, lightweight, and cost competitive materials. The natural abundance of zinc and the wide bandgap ($sim$3.3 eV) of its oxide make it an ideal candidate. In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than 90 %. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. With recent rapid development of bulk-heterojunction organic photovoltaics active materials, devices employing ZnO and ZnO based electrode provide air stable and cost-competitive alternatives to traditional inorganic photovoltaics. The organic light emitting diodes (OLEDs) have already been commercialized, thus to follow in the footsteps of this technology, OPV devices need further improvement in power conversion efficiency and stable materials resulting in long device lifetimes. Use of low work function metals such as Ca/Al in standard geometry do provide good electrode for electron collection, but serious problems using low work-function metal electrodes originates from the formation of non-conductive metal oxide due to oxidation resulting in rapid device failure. Hence, using low work-function, air stable, conductive metal oxides such as ZnO as electrons collecting electrode and high work-function, air stable metals such as silver for harvesting holes, has been on the rise. Devices with degenerately doped ZnO functioning as transparent conductive electrode, or as charge selective layer in a polymer/fullerene based heterojunction, present useful device structures for investigating the functional mechanisms within OPV devices and a possible pathway towards improved air-stable high efficiency devices. Furthermore, analysis of the physical properties of the ZnO layers with varying thickness, crystallographic structure, surface chemistry and grain size deposited via various techniques such as atomic layer deposition, sputtering and solution-processed ZnO with their respective OPV device performance is discussed. We find similarity and differences in electrode property for good charge injection in OLEDs and good charge collection in OPV devices very insightful in understanding physics behind device failures and successes. In general, self-passivating surface of amorphous TCOs IZO, ZTO and IZTO forms insulating layer that hinders the charge collection. Similarly, we find modulation of the carrier concentration and the mobility in electron transport layer, namely zinc oxide thin films, very important for optimizing device performance.

Advanced photovoltaic concentrator cells : quarterly technical progress report no. 5 for period September 1 - November 30, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Commercialization of a thick film solar cell : quarterly technical progress report for April 1 - June 30, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Commercialization of a thick film solar cell : quarterly technical progress report for period September 1 - October 1, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."