Night-to-night variation of pulse oximetry in children with sleep-disordered breathing

BACKGROUND: Sleep-disordered breathing is a common and serious feature of many paediatric conditions and is particularly a problem in children with Down syndrome. Overnight pulse oximetry is recommended as an initial screening test, but it is unclear how overnight oximetry results should be interpreted and how many nights should be recorded.

METHODS: This retrospective observational study evaluated night-to-night variation using statistical measures of repeatability for 214 children referred to a paediatric respiratory clinic, who required overnight oximetry measurements. This included 30 children with Down syndrome. We measured length of adequate trace, basal SpO2, number of desaturations (>4% SpO2 drop for >10 s) per hour ('adjusted index') and time with SpO2<90%. We classified oximetry traces into normal or abnormal based on physiology.

RESULTS: 132 out of 214 (62%) children had three technically adequate nights' oximetry, including 13 out of 30 (43%) children with Down syndrome. Intraclass correlation coefficient for adjusted index was 0.54 (95% CI 0.20 to 0.81) among children with Down syndrome and 0.88 (95% CI 0.84 to 0.91) for children with other diagnoses. Negative predictor value of a negative first night predicting two subsequent negative nights was 0.2 in children with Down syndrome and 0.55 in children with other diagnoses.

CONCLUSIONS: There is substantial night-to-night variation in overnight oximetry readings among children in all clinical groups undergoing overnight oximetry. This is a more pronounced problem in children with Down syndrome. Increasing the number of attempted nights' recording from one to three provides useful additional clinical information.

Optical processing devices and techniques for next generation optical networks

Este trabalho surge do interesse em substituir os nós de rede óptica baseados maioritariamente em electrónica por nós de rede baseados em tecnologia óptica. Espera-se que a tecnologia óptica permita maiores débitos binários na rede, maior transparência e maior eficiência através de novos paradigmas de comutação. Segundo esta visão, utilizou-se o MZI-SOA, um dispositivo semicondutor integrado hibridamente, para realizar funcionalidades de processamento óptico de sinal necessárias em nós de redes ópticas de nova geração. Nas novas redes ópticas são utilizados formatos de modulação avançados, com gestão da fase, pelo que foi estudado experimentalmente e por simulação o impacto da utilização destes formatos no desempenho do MZI-SOA na conversão de comprimento de onda e formato, em várias condições de operação. Foram derivadas regras de utilização para funcionamento óptimo. Foi também estudado o impacto da forma dos pulsos do sinal no desempenho do dispositivo. De seguida, o MZI-SOA foi utilizado para realizar funcionalidades temporais ao nível do bit e do pacote. Foi investigada a operação de um conversor de multiplexagem por divisão no comprimento de onda para multiplexagem por divisão temporal óptica, experimentalmente e por simulação, e de um compressor e descompressor de pacotes, por simulação. Para este último, foi investigada a operação com o MZI-SOA baseado em amplificadores ópticos de semicondutor com geometria de poço quântico e ponto quântico. Foi também realizado experimentalmente um ermutador de intervalos temporais que explora o MZI-SOA como conversor de comprimento de onda e usa um banco de linhas de atraso ópticas para introduzir no sinal um atraso seleccionável. Por fim, foi estudado analiticamente, experimentalmente e por simulação o impacto de diafonia em redes ópticas em diversas situações. Extendeu-se um modelo analítico de cálculo de desempenho para contemplar sinais distorcidos e afectados por diafonia. Estudou-se o caso de sinais muito filtrados e afectados por diafonia e mostrou-se que, para determinar correctamente as penalidades que ocorrem, ambos os efeitos devem ser considerados simultaneamente e não em separado. Foi estudada a escalabilidade limitada por diafonia de um comutador de intervalos temporais baseado em MZI-SOA a operar como comutador espacial. Mostrou-se também que sinais afectados fortemente por não-linearidades podem causar penalidades de diafonia mais elevadas do que sinais não afectados por não-linearidades. Neste trabalho foi demonstrado que o MZI-SOA permite construir vários e pertinentes circuitos ópticos, funcionando como bloco fundamental de construção, tendo sido o seu desempenho analisado, desde o nível de componente até ao nível de sistema. Tendo em conta as vantagens e desvantagens do MZI-SOA e os desenvolvimentos recentes de outras tecnologias, foram sugeridos tópicos de investigação com o intuito de evoluir para as redes ópticas de nova geração.

Piezoresponse force microscopy of ferroelectric relaxors

Nesta tese, ferroeléctricos relaxor (I dont know uf the order is correct) de base Pb das familias (Pb,La)(Zr,Ti)O3 (PLZT), Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT), Pb(Zn1/3,Nb2/3)O3-PbTiO3 (PZN-PT) foram investigados e analisados. As propriedades ferroeléctricas e dieléctricas das amostras foram estudadas por métodos convencionais de macro e localmente por microscopia de força piezoeléctrica (PFM). Nos cerâmicos PLZT 9.75/65/35 o contraste da PFM à escala nanometrica _ foi investigado em função do tamanho e orientação dos grãos. Apurou-se que a intensidade do sinal piezoeléctrico das nanoestruturas diminui com o aumento da temperatura e desaparece a 490 K (La mol. 8%) e 420 K (9,5%). Os ciclos de histerese locais foram obtidos em função da temperatura. A evolução dos parâmetros macroscópicos e locais com a temperatura de superfície sugere um forte efeito de superfície nas transições de fase ferroeléctricas do material investigado. A rugosidade da parede de domínio é determinada por PFM para a estrutura de domínio natural existente neste ferroeléctrico policristalino. Além disso, os domínios ferroeléctricos artificiais foram criados pela aplicação de pulsos eléctricos à ponta do condutor PFM e o tamanho de domínio in-plane foi medido em função da duração do pulso. Todas estas experiências levaram à conclusão de que a parede de domínio em relaxors do tipo PZT é quase uma interface unidimensional. O mecanismo de contraste na superfície de relaxors do tipo PLZT é medido por PFMAs estruturas de domínio versus evolução da profundidade foram estudadas em cristais PZN-4,5%PT, com diferentes orientações através da PFM. Padrões de domínio irregulares com tamanhos típicos de 20-100 nm foram observados nas superfícies com orientação <001> das amostras unpoled?. Pelo contrário, os cortes de cristal <111> exibem domínios regulares de tamanho mícron normal, com os limites do domínio orientados ao longo dos planos cristalográficos permitidos. A existência de nanodomínios em cristais com orientação <001> está provisoriamente (wrong Word) atribuída à natureza relaxor de PZN-PT, onde pequenos grupos polares podem formar-se em coindições de zero-field-cooling (ZFC). Estes nanodomínios são considerados como os núcleos do estado de polarização oposta e podem ser responsáveis pelo menor campo coercitivo para este corte de cristal em particular. No entanto, a histerese local piezoelétrica realizada pelo PFM à escala nanométrica indica uma mudança de comportamento de PZN-PT semelhante para ambas as orientações cristalográficas investigadas. A evolução das estruturas de domínio com polimento abaixo da superfície do cristal foi investigada. O domínio de ramificações e os efeitos de polarização de triagem após o polimento e as medições de temperatura têm sido estudados pela PFM e pela análise SEM. Além disso, verificou-se que a intensidade do sinal piezoeléctrico a partir das estruturas de nanodomínio diminui com o aumento da temperatura, acabando por desaparecer aos 430 K (orientaçáo <111>) e 470 K (orientação <100>). Esta diferença de temperatura nas transições de fase local em cristais de diferentes orientações é explicada pelo forte efeito de superfície na transição da fase ferroelétrica em relaxors.A comutação da polarização em relaxor ergódico e nas fases ferroeléctricas do sistema PMN-PT foram realizadas pela combinação de três métodos, Microscopia de Força Piezoeléctrica, medição de um único ponto de relaxamento eletromecânico e por ultimo mapeamento de espectroscopia de tensão. A dependência do comportamento do relaxamento na amplitude e tempo da tensão de pulso foi encontrada para seguir um comportamento logarítmico universal com uma inclinação quase constante. Este comportamento é indicativo da progressiva população dos estados de relaxamento lento, ao contrário de uma relaxação linear na presença de uma ampla distribuição do tempo de relaxamento. O papel do comportamento de relaxamento, da não-linearidade ferroeléctrica e da heterogeneidade espacial do campo na ponta da sonda de AFM sobre o comportamento do ciclo de histerese é analisada em detalhe. Os ciclos de histerese para ergódica PMN- 10%PT são mostrados como cineticamente limitados, enquanto que no PMN, com maior teor de PT, são observados verdadeiros ciclos de histerese ferroeléctrica com viés de baixa nucleação.

All-optical processing systems based on semiconductor optical amplifiers

Nesta tese investigam-se e desenvolvem-se dispositivos para processamento integralmente óptico em redes com multiplexagem densa por divisão no comprimento de onda (DWDM). O principal objectivo das redes DWDM é transportar e distribuir um espectro óptico densamente multiplexado com sinais de débito binário ultra elevado, ao longo de centenas ou milhares de quilómetros de fibra óptica. Estes sinais devem ser transportados e encaminhados no domínio óptico de forma transparente, sem conversões óptico-eléctrico-ópticas (OEO), evitando as suas limitações e custos. A tecnologia baseada em amplificadores ópticos de semicondutor (SOA) é promissora graças aos seus efeitos não-lineares ultra-rápidos e eficientes, ao potencial para integração, reduzido consumo de potência e custos. Conversores de comprimento de onda são o elemento óptico básico para aumentar a capacidade da rede e evitar o bloqueio de comprimentos de onda. Neste trabalho, são estudados e analisados experimentalmente métodos para aumentar a largura de banda operacional de conversores de modulação cruzada de ganho (XGM), a fim de permitir a operação do SOA para além das suas limitações físicas. Conversão de um comprimento de onda, e conversão simultânea de múltiplos comprimentos de onda são testadas, usando interferómetros de Mach-Zehnder com SOA. As redes DWDM de alto débito binário requerem formatos de modulação optimizados, com elevada tolerância aos efeitos nefastos da fibra, e reduzida ocupação espectral. Para esse efeito, é vital desenvolver conversores integramente ópticos de formatos de modulação, a fim de permitir a interligação entre as redes já instaladas, que operam com modulação de intensidade, e as redes modernas, que utilizam formatos de modulação avançados. No âmbito deste trabalho é proposto um conversor integralmente óptico de formato entre modulação óptica de banda lateral dupla e modulação óptica de banda lateral residual; este é caracterizado através de simulação e experimentalmente. Adicionalmente, é proposto um conversor para formato de portadora suprimida, através de XGM e modulação cruzada de fase. A interligação entre as redes de transporte com débito binário ultra-elevado e as redes de acesso com débito binário reduzido requer conversão óptica de formato de impulso entre retorno-a-zero (RZ) e não-RZ. São aqui propostas e investigadas duas estruturas distintas: uma baseada em filtragem desalinhada do sinal convertido por XGM; uma segunda utiliza as dinâmicas do laser interno de um SOA com ganho limitado (GC-SOA). Regeneração integralmente óptica é essencial para reduzir os custos das redes. Dois esquemas distintos são utilizados para regeneração: uma estrutura baseada em MZI-SOA, e um método no qual o laser interno de um GC-SOA é modulado com o sinal distorcido a regenerar. A maioria dos esquemas referidos é testada experimentalmente a 40 Gb/s, com potencial para aplicação a débitos binários superiores, demonstrado que os SOA são uma tecnologia basilar para as redes ópticas do futuro.

L'étude in vivo de l'impact de la pression pulsée sur les capillaires cérébraux de souris

Plusieurs décennies de recherche ont permis de mieux comprendre les effets de l’athérosclérose sur le système cardiovasculaire, d’améliorer la prévention et de développer des traitements efficaces. Les effets de l’athéroslérose sur le cerveau demeurent toutefois mal compris même si le lien entre le fonctionnement cognitif et la santé du système vasculaire est maintenant bien établi. La venue de nouvelles méthodes d’imagerie telle la microscopie laser à 2-photons (TPLM) permet d’étudier l’impact de certaines maladies sur la microvasculature cérébrale en mesurant le flux sanguin dans des vaisseaux uniques situés dans des régions cérébrales millimétriques sous la surface. Les résultats des études in vitro peuvent dorénavant être corrélés à ceux obtenus in vivo. En premier lieu, ce mémoire revoit la théorie ayant permis le développement de la TPLM qui permet de prendre des mesures hémodynamiques in vivo dans des vaisseaux de très petits calibres tels des capillaires cérébraux de souris. Par la suite, son utilisation est décrite chez des souris anesthésiées afin de comparer les mesures d’hémodynamie cérébrale tels la vitesse des globules rouges, le flux de globules rouges, le flux sanguin cérébral, l’hématocrite sanguin et le diamètre des vaisseaux. Finalement, nous avons comparé les données hémodynamiques entre des souris de 3 mois normales (WT ; n=6) et des souris atteintes d’athérosclérose précoce (ATX ; n=6). Les résultats obtenus sur un nombre total de 209 capillaires (103 pour les souris WT et 106 pour les souris ATX) démontrent que les souris ATX possèdent une vitesse des globules rouges (+40%) plus grande, un flux de globule rouge plus grand (+12%) et un flux capillaire plus élevé (+14%) sans démontrer pour aucun de ces paramètres, une différence statistiquement significative. L’hématocrite moyen (35±4% vs 33±2% ; p=0.71) et le diamètre moyen des vaisseaux (4.88±0.22μm vs 4.86±0.20μm ; p=0.23) étaient également comparables. La vitesse des globules rouges a démontré une faible corrélation avec le diamètre des vaisseaux (r=0.39) et avec le flux de globules rouges/seconde (r=0.59). En conclusion, les travaux menés dans le cadre de ce mémoire de maîtrise permettent d'envisager, grâce aux nouvelles méthodes d’imagerie cérébrale telle la TPLM, une meilleure compréhension des mécanismes hémodynamiques sous-jacents à la microcirculation cérébrale. L’effet d’une pression pulsée augmentée, tel que proposée dans l’athérosclérose reste cependant à démontrer avec cette méthode d’imagerie.

Dielectric Behavior of Natural Rubber Composites in Microwave Fields

In this article, we report the preparation of conducting natural rubber (NR) with polyaniline (Pani). NR was made into a conductive material by the compounding of NR with Pani in powder form. NR latex was made into a conductive material by the in situ polymerization of aniline in the presence of NR latex. Different compositions of Pani- NR semi-interpenetrating networks were prepared, and the dielectric properties of all of the samples were determined in microwave frequencies. The cavity perturbation techpique was used for this study. A HP8510 vector network analyzer with a rectangular cavity resonator was used for this study. S bands 2-4 GHz in frequency were used. Thermal studies were also carried out with thermogravimetric analysis and differential scanning calorimetry.

Dielectric Behavior of Natural Rubber Composites in Microwave Fields

In this article, we report the preparation of conducting natural rubber (NR) with polyaniline (Pani). NR was made into a conductive material by the compounding of NR with Pani in powder form. NR latex was made into a conductive material by the in situ polymerization of aniline in the presence of NR latex. Different compositions of Pani- NR semi-interpenetrating networks were prepared, and the dielectric properties of all of the samples were determined in microwave frequencies. The cavity perturbation techpique was used for this study. A HP8510 vector network analyzer with a rectangular cavity resonator was used for this study. S bands 2-4 GHz in frequency were used. Thermal studies were also carried out with thermogravimetric analysis and differential scanning calorimetry.

Elastic Constants And Structural Parameters Of Selected Polycrystalline Ceramics By Ultrasonic Technique

The present work is an attempt to probe the elastic properties in some dielectric ceramics, by using ultrasonic pulse echo overlap technique. The base Ba6-xSm8+2xTi18O54 and Ca5Nb2TiO12 are very important dielectrics ceramics used for microwave communication as well as for substrate materials. Ultrasonic is one of the most widely used and powerful techniques to measure elastic properties of solids. The ultrasonic technique is nondestructive in nature and the measurements are relatively straightforward to perform. One unique advantantage of the ultrasonic technique is that both static and dynamic properties can be measured simultaneously. The velocity and attenuation coefficients of the ultrasonic waves propagating through a medium are related to the microscopic structure of the material and they provide valuable information about the structural changes in the system. Among the various ultrasonic techniques, the pulse echo overlap method is the most accurate and precise one. In the present case the decreased elastic properties of Cas-XMg,Nb2TiO12 and Cas-,ZnNb2TiO12 ceramics can be attributed to their mixture phases beyond x = 1. Moreover, the abrupt change in elastic properties observed for x >1 can also be correlated to the structural transformation of the materials from their phase pure form to mixture phases for higher extent of substitution of the concerned material . Ca4(ANb2Ti)012 (A = Mg, Zn) is the strongest compound with the maximum values for elastic properties . This could be due to the possible substitution of Mg/Zn ions with lesser radius [25] than Ca2+ in perovskite B-site of Ca(Cali4Nb2i4Tili4) O3 material to contribute more ordering and symmetry to the system [20]. All other compositions (x > 1) contain mixed-phases and for such mixed-phase samples, the mechanical properties are difficult to explain.

Microwave Dielectric Properties of BaO -2CeO2-nTiO2 Ceramics

The BaO-2CeO2-nTiO2 ceramics with n = 3, 4 and 5 have been prepared with CeO2 as starting material . The ceramics have been characterized using scanning electron microscopy , X-ray diffraction , Raman and X-ray photoelectron spectroscopy techniques. The microwave dielectric properties have been measured using standard dielectric resonator techniques . BaO-2CeO2-3TiO2 (123), BaO-2CeO2-4TiO2 ( 124) and BaO-2CeO2-5TiO2 ( 125) ceramics showed dielectric constants of 38, 27 and 32, respectively . All the ceramics showed fairly good unloaded Q - factors . 124 and 125 compounds exhibited low tf values, while 123 showed a high rf value

Fabrication and Characterization of All-Fiber Components for Optical Access Networks

This Thesis deals with the fabrication and characterization of novel all-fiber components for access networks. All fiber components offer distinctive advantages due to low forward and backward losses, epoxy free optical path and high power handling. A novel fabrication method for monolithic 1x4 couplers, which are vital components in distributed passive optical networks, is realized. The fabrication method differs from conventional structures with a symmetric coupling profile and hence offers ultra wideband performance and easy process control. New structure for 1x4 couplers, by fusing five fibers is proposed to achieve high uniformity, which gives equivalent uniformity performance to 1x4 planar lightwave splitters, isolation in fused fiber WDM is improved with integration of long period gratings. Packaging techniques of fused couplers are analyzed for long term stability.

Electrical conductivity, dielectric properties and phase transition in ethylenediammonium sulphate single crystals

D.C. and a.c. electrical conductivities, dielectric constant and dielectric loss factor in single crystals of ethylenediammonium sulphate, (H3NCH2CH2NH3)(SO4), have been measured axiswise as a function of temperature. Anomalous variations in all the above properties at 480 K indicate the occurrence of a phase transition in the above material at this temperature. The existence of such a phase transition is also confirmed by DSC measurements. Electrical conductivity results are analysed and the activation energies of conduction at different temperature regions have been evaluated from the logσ vs 103T−1 plot. Possible mechanisms for the electrical conduction process are discussed, the available results being in favour of a proton transport model.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

Development of hybrid UV VCSEL with organic active material and dielectric DBR mirrors for medical, sensoric and data storage applications

Lasers play an important role for medical, sensoric and data storage devices. This thesis is focused on design, technology development, fabrication and characterization of hybrid ultraviolet Vertical-Cavity Surface-Emitting Lasers (UV VCSEL) with organic laser-active material and inorganic distributed Bragg reflectors (DBR). Multilayer structures with different layer thicknesses, refractive indices and absorption coefficients of the inorganic materials were studied using theoretical model calculations. During the simulations the structure parameters such as materials and thicknesses have been varied. This procedure was repeated several times during the design optimization process including also the feedback from technology and characterization. Two types of VCSEL devices were investigated. The first is an index coupled structure consisting of bottom and top DBR dielectric mirrors. In the space in between them is the cavity, which includes active region and defines the spectral gain profile. In this configuration the maximum electrical field is concentrated in the cavity and can destroy the chemical structure of the active material. The second type of laser is a so called complex coupled VCSEL. In this structure the active material is placed not only in the cavity but also in parts of the DBR structure. The simulations show that such a distribution of the active material reduces the required pumping power for reaching lasing threshold. High efficiency is achieved by substituting the dielectric material with high refractive index for the periods closer to the cavity. The inorganic materials for the DBR mirrors have been deposited by Plasma- Enhanced Chemical Vapor Deposition (PECVD) and Dual Ion Beam Sputtering (DIBS) machines. Extended optimizations of the technological processes have been performed. All the processes are carried out in a clean room Class 1 and Class 10000. The optical properties and the thicknesses of the layers are measured in-situ by spectroscopic ellipsometry and spectroscopic reflectometry. The surface roughness is analyzed by atomic force microscopy (AFM) and images of the devices are taken with scanning electron microscope (SEM). The silicon dioxide (SiO2) and silicon nitride (Si3N4) layers deposited by the PECVD machine show defects of the material structure and have higher absorption in the ultra violet range compared to ion beam deposition (IBD). This results in low reflectivity of the DBR mirrors and also reduces the optical properties of the VCSEL devices. However PECVD has the advantage that the stress in the layers can be tuned and compensated, in contrast to IBD at the moment. A sputtering machine Ionsys 1000 produced by Roth&Rau company, is used for the deposition of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). The chamber is equipped with main (sputter) and assisted ion sources. The dielectric materials were optimized by introducing additional oxygen and nitrogen into the chamber. DBR mirrors with different material combinations were deposited. The measured optical properties of the fabricated multilayer structures show an excellent agreement with the results of theoretical model calculations. The layers deposited by puttering show high compressive stress. As an active region a novel organic material with spiro-linked molecules is used. Two different materials have been evaporated by utilizing a dye evaporation machine in the clean room of the department Makromolekulare Chemie und Molekulare Materialien (mmCmm). The Spiro-Octopus-1 organic material has a maximum emission at the wavelength λemission = 395 nm and the Spiro-Pphenal has a maximum emission at the wavelength λemission = 418 nm. Both of them have high refractive index and can be combined with low refractive index materials like silicon dioxide (SiO2). The sputtering method shows excellent optical quality of the deposited materials and high reflection of the multilayer structures. The bottom DBR mirrors for all VCSEL devices were deposited by the DIBS machine, whereas the top DBR mirror deposited either by PECVD or by combination of PECVD and DIBS. The fabricated VCSEL structures were optically pumped by nitrogen laser at wavelength λpumping = 337 nm. The emission was measured by spectrometer. A radiation of the VCSEL structure at wavelength 392 nm and 420 nm is observed.

Development of directly modulated high speed telecommunication lasers based on surface defined feedback gratings

High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.

The diurnal course of soil moisture as measured by various dielectric sensors: Effects of soil temperature and the implications for evaporation estimates

Soil moisture content, theta, of a bare and vegetated UK gravelly sandy loam soil (in situ and repacked in small lysimeters) was measured using various dielectric instruments (single-sensor ThetaProbes, multi-sensor Profile Probes, and Aquaflex Sensors), at depths ranging between 0.03 and I m, during the summers of 2001 (in situ soil) and 2002 (mini-lysimeters). Half-hourly values of evaporation, E, were calculated from diurnal changes in total soil profile water content, using the soil water balance equation. For the bare soil field, Profile Probes and ML2x ThetaProbes indicated a diurnal course of theta that did not concur with typical soil physical observations: surface layer soil moisture content increased from early morning until about midday, after which theta declined, generally until the early evening. The unexpected course of theta was positively correlated to soil temperature, T-s, also at deeper depths. Aquaflex and ML1 ThetaProbe (older models) outputs, however, reflected common observations: 0 increased slightly during the night (capillary rise) and decreased from the morning until late afternoon (as a result of evaporation). For the vegetated plot, the spurious diurnal theta fluctuations were less obvious, because canopy shading resulted in lower amplitudes of T-s. The unrealistic theta profiles measured for the bare and vegetated field sites caused diurnal estimates of E to attain downward daytime and upward night-time values. In the mini-lysimeters, at medium to high moisture contents, theta values measured by (ML2x) ThetaProbes followed a relatively realistic course, and predictions of E from diurnal changes in vertically integrated theta generally compared well with lysimeter estimates of E. However, time courses of theta and E became comparable to those observed for the field plots when the soil in the lysimeters reached relatively low values of theta. Attempts to correct measured theta for fluctuations in T, revealed that no generally applicable formula could be derived. (c) 2005 Elsevier B.V. All rights reserved.