894 resultados para Temperature sensors


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Simultaneous measurements of thickness and temperature profile of the lubricant film at chip-tool interface during machining have been studied in this experimental programme. Conventional techniques such as thermography can only provide temperature measurement under controlled environment in a laboratory and without the addition of lubricant. The present study builds on the capabilities of luminescent sensors in addition to direct image based observations of the chip-tool interface. A suite of experiments conducted using different types of sensors are reported in this paper, especially noteworthy are concomitant measures of thickness and temperature of the lubricant. (C) 2014 Elsevier Ltd.

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A temperature compensation method is proposed for CNT-composite strain sensors. CNT-composite sensors are fabricated on an elastic polymer substrate having known thermo-mechanical properties to introduce thermo-mechanical strain and further calibration of the sensor. Strain is induced on the sensor by bending the substrate as a cantilever configuration. Response of the sensor is measured using a bridge circuit method. Induced strain in the beam is determined using beam theory. The sensors are characterized for different CNT concentrations and at various temperatures. A model based temperature compensation scheme is proposed and verified experimentally. The result proves the ability of CNT-nanocomposite strain sensors to be used under varying temperature applications. A method is proposed to determine the strain and temperature simultaneously. The CNT sensors are simple to fabricate in complex patterns with excellent repeatability and do not require bonding layer.

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This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

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Two fiber grating sensors for high-temperature measurements are proposed and experimentally demonstrated. The interrogation technologies of the sensor systems are all simple, low cost but effective. In the first sensor system, the sensor head is comprised of one fiber Bragg grating (FBG) and two metal rods. The lengths of the rods are different from each other. The coefficients of thermal expansion of the rods are also different from each other. The FBG will be strained by the sensor head when the temperature to be measured changes. The temperature is measured based on the wavelength-shifts of the FBG induced by the strain. In the second sensor system, a long-period fiber grating (LPG) is used as the high-temperature sensor head. The LPG is very-high-temperature stable CO2-Aaser-induced grating and has a linear function of wavelength-temperature in the range of 0 - 800 degrees C. A dynamic range of 0 - 800 degrees C and a resolution of 1 degrees C have been obtained by either the first or the second sensor system. The experimental results agree with theoretical analyses. (c) 2007 Elsevier Ltd. All rights reserved.

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A novel temperature and pressure sensor based on a single film bulk acoustic resonator (FBAR) is designed. This FBAR support two resonant modes, which response opposite to the change of temperature. By sealed the back cavity of a back-trench membrane type FBAR with silicon wafer, an on-chip single FBAR sensor suitable for measuring temperature and pressure simultaneously is proposed. For unsealed device, the experimental results show that the first resonant mode has a temperature coefficient of frequency (TCF) of 69.5ppm/K, and the TCF of the second mode is -8.1ppm/K. After sealed the back trench, it can be used as a pressure sensor, the pressure coefficient of frequency (PCF) for the two resonant mode is -17.4ppm/kPa and -6.1 ppm/kPa respectively, both of them being more sensitive than other existing pressure sensors. © 2013 Trans Tech Publications Ltd, Switzerland.

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Evaluation of temperature distribution in cold rooms is an important consideration in the design of food storage solutions. Two common approaches used in both industry and academia to address this question are the deployment of wireless sensors, and modelling with Computational Fluid Dynamics (CFD). However, for a realworld evaluation of temperature distribution in a cold room, both approaches have their limitations. For wireless sensors, it is economically unfeasible to carry out large-scale deployment (to obtain a high resolution of temperature distribution); while with CFD modelling, it is usually not accurate enough to get a reliable result. In this paper, we propose a model-based framework which combines the wireless sensors technique with CFD modelling technique together to achieve a satisfactory trade-off between minimum number of wireless sensors and the accuracy of temperature profile in cold rooms. A case study is presented to demonstrate the usability of the framework.

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Soil moisture content, theta, of a bare and vegetated UK gravelly sandy loam soil (in situ and repacked in small lysimeters) was measured using various dielectric instruments (single-sensor ThetaProbes, multi-sensor Profile Probes, and Aquaflex Sensors), at depths ranging between 0.03 and I m, during the summers of 2001 (in situ soil) and 2002 (mini-lysimeters). Half-hourly values of evaporation, E, were calculated from diurnal changes in total soil profile water content, using the soil water balance equation. For the bare soil field, Profile Probes and ML2x ThetaProbes indicated a diurnal course of theta that did not concur with typical soil physical observations: surface layer soil moisture content increased from early morning until about midday, after which theta declined, generally until the early evening. The unexpected course of theta was positively correlated to soil temperature, T-s, also at deeper depths. Aquaflex and ML1 ThetaProbe (older models) outputs, however, reflected common observations: 0 increased slightly during the night (capillary rise) and decreased from the morning until late afternoon (as a result of evaporation). For the vegetated plot, the spurious diurnal theta fluctuations were less obvious, because canopy shading resulted in lower amplitudes of T-s. The unrealistic theta profiles measured for the bare and vegetated field sites caused diurnal estimates of E to attain downward daytime and upward night-time values. In the mini-lysimeters, at medium to high moisture contents, theta values measured by (ML2x) ThetaProbes followed a relatively realistic course, and predictions of E from diurnal changes in vertically integrated theta generally compared well with lysimeter estimates of E. However, time courses of theta and E became comparable to those observed for the field plots when the soil in the lysimeters reached relatively low values of theta. Attempts to correct measured theta for fluctuations in T, revealed that no generally applicable formula could be derived. (c) 2005 Elsevier B.V. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)