An Embedded Stress Sensor for Concrete SHM Based on Amorphous Ferromagnetic Microwires

A new smart concrete aggregate design as a candidate for applications in structural health monitoring (SHM) of critical elements in civil infrastructure is proposed. The cement-based stress/strain sensor was developed by utilizing the stress/strain sensing properties of a magnetic microwire embedded in cement-based composite (MMCC). This is a contact-less type sensor that measures variations of magnetic properties resulting from stress variations. Sensors made of these materials can be designed to satisfy the specific demand for an economic way to monitor concrete infrastructure health. For this purpose, we embedded a thin magnetic microwire in the core of a cement-based cylinder, which was inserted into the concrete specimen under study as an extra aggregate. The experimental results show that the embedded MMCC sensor is capable of measuring internal compressive stress around the range of 1-30 MPa. Two stress sensing properties of the embedded sensor under uniaxial compression were studied: the peak amplitude and peak position of magnetic switching field. The sensitivity values for the amplitude and position within the measured range were 5 mV/MPa and 2.5 mu s/MPa, respectively.

Strategies for Power Line Communications Smart Metering Network Deployment

Smart Grids are becoming a reality all over the world. Nowadays, the research efforts for the introduction and deployment of these grids are mainly focused on the development of the field of Smart Metering. This emerging application requires the use of technologies to access the significant number of points of supply (PoS) existing in the grid, covering the Low Voltage (LV) segment with the lowest possible costs. Power Line Communications (PLC) have been extensively used in electricity grids for a variety of purposes and, of late, have been the focus of renewed interest. PLC are really well suited for quick and inexpensive pervasive deployments. However, no LV grid is the same in any electricity company (utility), and the particularities of each grid evolution, architecture, circumstances and materials, makes it a challenge to deploy Smart Metering networks with PLC technologies, with the Smart Grid as an ultimate goal. This paper covers the evolution of Smart Metering networks, together with the evolution of PLC technologies until both worlds have converged to project PLC-enabled Smart Metering networks towards Smart Grid. This paper develops guidelines over a set of strategic aspects of PLC Smart Metering network deployment based on the knowledge gathered on real field; and introduces the future challenges of these networks in their evolution towards the Smart Grid.

Optical learning in a smart spatial light modulator

A synaptic plane rendered by an array of smart pixels was described regarding its application as a complementary component for neural network implementation. The smart spatial light modulator featured auto-modification abilities. Thus, an optical system incorporating this device can show self-reliant optical learning. Furthermore, the optical system design, in the area of its optical interconnection scheme, is highly flexible since the independent weight-plane pixels eliminated the difficulty between weight update calculation and weight representation.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.