Parasitic lasing suppression in high gain femtosecond petawatt Ti: sapphire amplifier

New parasitic lasing suppression techniques are developed and high gain amplification is demonstrated in a petawatt level Ti:sapphire amplifier based on the chirped pulse amplification (CPA) scheme. Cladding the large aperture Ti: sapphire with refractive-index matched liquid doped with absorber suppresses the transverse lasing. The acousto-optic programmable dispersive filter (AOPDF) is used to realize side-lobe suppression in the temporal profile of the compressed pulse. The 800 nm laser output with peak power of 0.89 PW and pulse width of 29.0 fs is demonstrated. (c) 2007 Optical Society of America.

Magnetic alignment of high-aspect ratio microwires into vertical arrays

Fundamental studies of magnetic alignment of highly anisotropic mesostructures can enable the clean-room-free fabrication of flexible, array-based solar and electronic devices, in which preferential orientation of nano- or microwire-type objects is desired. In this study, ensembles of 100 micron long Si microwires with ferromagnetic Ni and Co coatings are oriented vertically in the presence of magnetic fields. The degree of vertical alignment and threshold field strength depend on geometric factors, such as microwire length and ferromagnetic coating thickness, as well as interfacial interactions, which are modulated by varying solvent and substrate surface chemistry. Microwire ensembles with vertical alignment over 97% within 10 degrees of normal, as measured by X-ray diffraction, are achieved over square cm scale areas and set into flexible polymer films. A force balance model has been developed as a predictive tool for magnetic alignment, incorporating magnetic torque and empirically derived surface adhesion parameters. As supported by these calculations, microwires are shown to detach from the surface and align vertically in the presence of magnetic fields on the order of 100 gauss. Microwires aligned in this manner are set into a polydimethylsiloxane film where they retain their vertical alignment after the field has been removed and can subsequently be used as a flexible solar absorber layer. Finally, these microwires arrays can be protected for use in electrochemical cells by the conformal deposition of a graphene layer.

Rational design of zinc phosphide heterojunction photovoltaics

The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an "earth-abundant" solar absorber, we find zinc phosphide (α-Zn₃P₂) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10⁴ cm^-1), and long minority-carrier diffusion length (>5 μm), Zn₃P₂ is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn₃P₂ device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn₃P₂ which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn₃P₂ interfaces, an ideal heterojunction partner has not yet been found.

The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn₃P₂ absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn₃P₂ on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn₃P₂ epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn₃P₂ and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn₃P₂ PV device. Finally, various II-VI/Zn₃P₂ heterojunction solar cells designs are fabricated, including substrate and superstrate architectures, and evaluated based on their solar conversion efficiency.

Análisis de la influencia de la orientación de las fibras metálicas en la resistencia de la matriz de hormigón de acuerdo al Ensayo Barcelona

[ES]El objetivo de este trabajo de fin de grado es analizar la influencia que tiene la cuantía y orientación de fibras metálicas presentes en el interior de probetas de hormigón autocompactante y cuyo objetivo es reforzar y aumentar la resistencia a tracción de este material. Se expondrán las propiedades que combina el HACRFA gracias a la autocompactación del hormigón y la inclusión de fibras en su interior y los beneficios que este nuevo material aporta. Por otro lado, se tratara de situar este estudio en un contexto, analizando a la vez cuál es el alcance y los objetivos más importantes que se han tenido en cuenta. A continuación, y a modo de complementación de su contexto, este trabajo tiene un estado del arte, en el que se mencionarán métodos y ensayos necesarios para llegar a un resultado que permita predecir cuál será la resistencia del material, y por tanto su tenacidad o capacidad de absorber energía, sin necesidad de emplear más que un método fácil y rápido, obviando el resto de ensayos destructivos utilizados en este trabajo. Para tal fin, se establece una metodología que, gracias a ensayos de laboratorio, permita establecer una relación entre el método sencillo que se ha mencionado, el método inductivo, y un resultado teórico de la tenacidad que presenta el HACRFA. Se observará cómo la desviación entre los ensayos experimentales y los resultados teóricos obtenidos es prácticamente nula, despreciando situaciones en las que se presenten comportamientos muy diferentes debido a fallos durante los ensayos.

Nanophotonic Light Trapping In Thin Solar Cells

Over the last several decades there have been significant advances in the study and understanding of light behavior in nanoscale geometries. Entire fields such as those based on photonic crystals, plasmonics and metamaterials have been developed, accelerating the growth of knowledge related to nanoscale light manipulation. Coupled with recent interest in cheap, reliable renewable energy, a new field has blossomed, that of nanophotonic solar cells.

In this thesis, we examine important properties of thin-film solar cells from a nanophotonics perspective. We identify key differences between nanophotonic devices and traditional, thick solar cells. We propose a new way of understanding and describing limits to light trapping and show that certain nanophotonic solar cell designs can have light trapping limits above the so called ray-optic or ergodic limit. We propose that a necessary requisite to exceed the traditional light trapping limit is that the active region of the solar cell must possess a local density of optical states (LDOS) higher than that of the corresponding, bulk material. Additionally, we show that in addition to having an increased density of states, the absorber must have an appropriate incoupling mechanism to transfer light from free space into the optical modes of the device. We outline a portfolio of new solar cell designs that have potential to exceed the traditional light trapping limit and numerically validate our predictions for select cases.

We emphasize the importance of thinking about light trapping in terms of maximizing the optical modes of the device and efficiently coupling light into them from free space. To further explore these two concepts, we optimize patterns of superlattices of air holes in thin slabs of Si and show that by adding a roughened incoupling layer the total absorbed current can be increased synergistically. We suggest that the addition of a random scattering surface to a periodic patterning can increase incoupling by lifting the constraint of selective mode occupation associated with periodic systems.

Lastly, through experiment and simulation, we investigate a potential high efficiency solar cell architecture that can be improved with the nanophotonic light trapping concepts described in this thesis. Optically thin GaAs solar cells are prepared by the epitaxial liftoff process by removal from their growth substrate and addition of a metallic back reflector. A process of depositing large area nano patterns on the surface of the cells is developed using nano imprint lithography and implemented on the thin GaAs cells.

Zn-VI/Cu2O Heterojunctions for Earth-Abundant Photovoltaics

The need for sustainable energy production motivates the study of photovoltaic materials, which convert energy from sunlight directly into electricity. This work has focused on the development of Cu₂O as an earth-abundant solar absorber due to the abundance of its constituent elements in the earth's crust, its suitable band gap, and its potential for low cost processing. Crystalline wafers of Cu₂O with minority carrier diffusion lengths on the order of microns can be manufactured in a uniquely simple fashion — directly from copper foils by thermal oxidation. Furthermore, Cu₂O has an optical band gap of 1.9 eV, which gives it a detailed balance energy conversion efficiency of 24.7% and the possibility for an independently connected Si/Cu₂O dual junction with a detailed balance efficiency of 44.3%.

However, the highest energy conversion efficiency achieved in a photovoltaic device with a Cu₂O absorber layer is currently only 5.38% despite the favorable optical and electronic properties listed above. There are several challenges to making a Cu₂O photovoltaic device, including an inability to dope the material, its relatively low chemical stability compared to other oxides, and a lack of suitable heterojunction partners due to an unusually small electron affinity. We have addressed the low chemical stability, namely the fact that Cu₂O is an especially reactive oxide due to its low enthalpy of formation (ΔH_f⁰ = -168.7 kJ/mol), by developing a novel surface preparation technique. We have addressed the lack of suitable heterojunction partners by investigating the heterojunction band alignment of several Zn-VI materials with Cu₂O. Finally, We have addressed the typically high series resistance of Cu₂O wafers by developing methods to make very thin, bulk Cu₂O, including devices on Cu₂O wafers as thin as 20 microns. Using these methods we have been able to achieve photovoltages over 1 V, and have demonstrated the potential of a new heterojunction material, Zn(O,S).

Geometrical effects on the resonance absorption of neutrons

An investigation was conducted to estimate the error when the flat-flux approximation is used to compute the resonance integral for a single absorber element embedded in a neutron source.

The investigation was initiated by assuming a parabolic flux distribution in computing the flux-averaged escape probability which occurs in the collision density equation. Furthermore, also assumed were both wide resonance and narrow resonance expressions for the resonance integral. The fact that this simple model demonstrated a decrease in the resonance integral motivated the more detailed investigation of the thesis.

An integral equation describing the collision density as a function of energy, position and angle is constructed and is subsequently specialized to the case of energy and spatial dependence. This equation is further simplified by expanding the spatial dependence in a series of Legendre polynomials (since a one-dimensional case is considered). In this form, the effects of slowing-down and flux depression may be accounted for to any degree of accuracy desired. The resulting integral equation for the energy dependence is thus solved numerically, considering the slowing down model and the infinite mass model as separate cases.

From the solution obtained by the above method, the error ascribable to the flat-flux approximation is obtained. In addition to this, the error introduced in the resonance integral in assuming no slowing down in the absorber is deduced. Results by Chernick for bismuth rods, and by Corngold for uranium slabs, are compared to the latter case, and these agree to within the approximations made.

Cr^4＋：YAG被动调QNd：YAG陶瓷激光器的研究

介绍了近几年迅速发展的一种新型激光介质——透明Nd：YAG多晶陶瓷的发展状况，对比分析了多晶陶瓷与单晶的光谱特性、激光特性和连续实验研究情况。并对钛宝石激光器调谐至808nm，端面抽运Nd：YAG陶瓷被动调Q全固态激光器的脉冲运转进行了较为详细的理论分析和实验研究。采用初始透射率为90％的Cr^4＋：YAG可饱和吸收晶体，被动调Q的阈值功率为119mW，当端面抽运功率为465mW时，获得波长为1064nm，脉宽为16ns，重复频率为18．18kHz，单脉冲能量为3．4μJ，平均输出功率为61mW的稳定调Q

Optimización del proceso de producción del tubo vástago de un amortiguador Mcpherson: Caracterización del proceso de producción, metalográfica y propiedades mecánicas.

[ES]En este proyecto se va analizar metalúrgicamente todo el proceso de un tubo vástago para amortiguadores. El tubo a analizar es un tubo fabricado en Hijos de Juan Garay SA (HJG). Para analizar cada fase de fabricación del tubo, se cortan probetas en cada fase y se mandan a analizar a IK4-Azterlan. Con ello se obtiene la caracterización metalográfica y mecánica en cada momento, por lo tanto, analizando como conjunto todo los análisis de cada etapa de fabricación se podrá observar los cambios producidos en el tubo y obtener conclusiones para mejor sus proceso de producción.

飞秒激光所致金纳米粒子析出的玻璃非线性吸收

依据Z-scan技术，使用波长532nm的纳秒脉冲，研究了通过聚焦的飞秒脉冲诱导并辅以热处理得到的金纳米粒子析出的玻璃的非线性吸收．观察到金纳米粒子析出的玻璃具有饱和吸收特性．根据局域场效应，对实验结果拟合，得到在接近表面等离子体共振激发情况下，金纳米粒子三阶极化率虚部分别为Imχm^(3)=5．7×10^-7esu．玻璃样品中金纳米粒子的非线性响应主要起源于热电子贡献。

Nanosecond nonlinear absorption in Au and Ag nanoparticles precipitated glasses induced by a femtosecond laser

We obtain Au and Ag nanoparticles precipitated in glasses by irradiation of focused femtosecond pulses, and investigate the nonlinear absorptions of the glasses by using Z-scan technique with ns pulses at 532 nm. We observe the saturable absorption behavior for An nanoparticles precipitated glasses and the reverse saturable ones for Ag ones. We also obtain, by fitting to the experimental results in the light of the local field effect near and away from the surface plasmon resonance, chi(m)((3)) = 4.5 x 10(-7) and 5.9 x 10(-8) esu for m the imaginary parts of the third-order susceptibilities for Au and Ag nanoparticles, respectively. The nonlinear response of Au nanoparticles in the glass samples arises mainly from the hot-electron contribution and the saturation of the interband transitions near the surface plasmon resonance, whereas that of Ag nanoparticles in the glass samples from the interband transitions. These show that the obtained glasses can be used as optoelectronic devices suiting for different demands. (c) 2005 Elsevier B.V. All rights reserved.

Diode-pumped Yb : GSO femtosecond laser

Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb: GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1 similar to 100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW. (c) 2007 Optical Society of America.

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 μm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses. © 2003 Optical Society of America.

Long-wavelength monolithic mode-locked diode lasers

A detailed study of the design issues relevant to long-wavelength monolithic mode-locked lasers is presented. Following a detailed review of the field, we have devised a validated travelling wave model to explore the limits of mode-locking in monolithic laser diodes, not only in terms of pulse duration and repetition rate, but also in terms of stability. It is shown that fast absorber recovery is crucial for short pulse width, that the ratio of gain to absorption saturation is key in accessing ultrashort pulses and that low alpha factors give only modest benefit. Finally, optimized contact layouts are shown to greatly enhance pulse stability and the overall operational success. The design rules show high levels of consistency with published experimental data.

Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.