Origin of nonlinearity and plausible turbulence by hydromagnetic transient growth in accretion disks: Faster growth rate than magnetorotational instability

We investigate the evolution of hydromagnetic perturbations in a small section of accretion disks. It is known that molecular viscosity is negligible in accretion disks. Hence, it has been argued that a mechanism, known as magnetorotational instability (MRI), is responsible for transporting matter in the presence of a weak magnetic field. However, there are some shortcomings, which question the effectiveness of MRI. Now the question arises, whether other hydromagnetic effects, e.g., transient growth (TG), can play an important role in bringing nonlinearity into the system, even at weak magnetic fields. In addition, it should be determined whether MRI or TG is primarily responsible for revealing nonlinearity in order to make the flow turbulent. Our results prove explicitly that the flows with a high Reynolds number (Re), which is the case for realistic astrophysical accretion disks, exhibit nonlinearity via TG of perturbation modes faster than that by modes producing MRI. For a fixed wave vector, MRI dominates over transient effects only at low Re, lower than the value expected to be in astrophysical accretion disks, and low magnetic fields. This calls into serious question the (overall) persuasiveness of MRI in astrophysical accretion disks.

Field induced domain switching as the origin of anomalous lattice strain along non-polar direction in rhombohedral BiScO3-PbTiO3 close to the morphotropic phase boundary

The lattice strain and domain switching behavior of xBiScO(3)-(1-x) PbTiO3 (x = 0.40) was investigated as a function of cyclic field and grain orientation by in situ X-ray diffraction during application of electric fields. The electric field induced 200 lattice strain was measured to be five times larger than the 111 lattice strain in pseudorhombohedral xBiScO(3)-(1-x) PbTiO3 (x = 0.40). It is shown that the anomalous 200 lattice strain is not an intrinsic phenomenon, but arises primarily due to stress associated with the reorientation of the 111 domains in dense polycrystalline ceramic. (C) 2015 AIP Publishing LLC.

Electronic structure origin of conductivity and oxygen reduction activity changes in low-level Cr-substituted (La, Sr)MnO3

The electronic structure of the (La0.8Sr0.2)(0.98)Mn1-xCrxO3 model series (x = 0, 0.05, or 0.1) was measured using soft X-ray synchrotron radiation at room and elevated temperature. O K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra showed that low-level chromium substitution of (La, Sr)MnO3 resulted in lowered hybridisation between O 2p orbitals and M 3d and M 4sp valance orbitals. Mn L-3-edge resonant photoemission spectroscopy measurements indicated lowered Mn 3d-O 2p hybridisation with chromium substitution. Deconvolution of O K-edge NEXAFS spectra took into account the effects of exchange and crystal field splitting and included a novel approach whereby the pre-peak region was described using the nominally filled t(2g) up arrow state. 10% chromium substitution resulted in a 0.17 eV lowering in the energy of the t(2g) up arrow state, which appears to provide an explanation for the 0.15 eV rise in activation energy for the oxygen reduction reaction, while decreased overlap between hybrid O 2p-Mn 3d states was in qualitative agreement with lowered electronic conductivity. An orbital-level understanding of the thermodynamically predicted solid oxide fuel cell cathode poisoning mechanism involving low-level chromium substitution on the B-site of (La, Sr)MnO3 is presented. (C) 2015 AIP Publishing LLC.

Investigation on the origin of exchange bias in epitaxial, oriented and polycrystalline Fe3O4 thin films

We observe exchange bias (EB) in a single magnetic film Fe3O4 at temperature T < 200 K. Irrespective of crystallographic orientations of grown Fe3O4; they exhibit similar nature of EB for (100) epitaxial, (111) oriented and polycrystalline Fe3O4 thin films. Growth induced defects such as anti-phase boundaries (APBs) in epitaxial Fe3O4 thin film is known to have an influence on the magnetic interaction. But, it is noticed that according to the common consensus of APBs alone cannot explain the origin of EB. If majority of APBs end up with mainly anti-ferromagnetic interactions across these boundaries together with the internal ordering modification in Fe3O4, then EB can emerge at low temperatures. Hence, we propose the idea of directional anti-ferromagnetic APB induced EB in Fe3O4 triggered by internal ordering for T <= 200 K. Similar arguments are extended to (111) oriented as well as polycrystalline Fe3O4 films where the grain boundaries can impart same consequence as that of APBs. (C) 2015 Author(s).

Origin of giant dielectric constant and conductivity behavior in Zn1-xMgxO (0 <= x <= 0.1) ceramics

Zn1-xMgxO ( <= x <= 0.1) ceramics were fabricated by conventional solid-state reaction of co-precipitated zinc oxide and magnesium hydroxide nanoparticles. Structural and morphological properties of the fabricated ceramics were studied using X-ray diffraction and scanning electron microscopic analysis. The dielectric measurements of the ceramics were carried out as a function of frequency and temperature respectively. Interestingly, Mg doped ZnO (MZO) samples exhibited colossal dielectric response (similar to 1 x 10(4) at 1 kHz) with Debye like relaxation. The detailed dielectric studies and thermal analyses showed that the unusual dielectric response of the samples were originated from the defected grain and grain boundary (GB) conductivity relaxations due to the absorbed atmospheric water vapor (moisture). Impedance spectroscopy was employed to determine the defected grain and GB resistances, capacitances and which supported Maxwell-Wagner type relaxation phenomena. (C) 2015 Elsevier Ltd. All rights reserved.

Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene

Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device quality and their electronic performance. Here we show that the grain boundaries in graphene which induce additional scattering of carriers in the conduction channel also act as an additional and strong source of electrical noise especially at the room temperature. From graphene field effect transistors consisting of single GB, we find that the electrical noise across the graphene GBs can be nearly 10 000 times larger than the noise from equivalent dimensions in single crystalline graphene. At high carrier densities (n), the noise magnitude across the GBs decreases as proportional to 1/n, suggesting Hooge-type mobility fluctuations, whereas at low n close to the Dirac point, the noise magnitude could be quantitatively described by the fluctuations in the number of propagating modes across the GB.

Investigations on the physical origin of lateral photovoltage in PbS-colloidal quantum dot/Si heterojunctions

Restricted area heterojunctions, an array of lead sulfide colloidal quantum dots (PbS-CQDs) and crystalline silicon, are studied with a non-destructive remote contact light beam induced current (RC-LBIC) technique. As well as getting good quality active area images we observed an anomalous unipolar signal response for the PbS-CQD/n-Si devices and a conventionally expected bipolar signal profile for the PbS-CQD/p-Si devices. Interestingly, our simulation results consistently yielded a unipolar and bipolar nature in the signals related to the PbSCQD/n-Si and PbS-CQD/p-Si heterostructures, respectively. In order to explain the physical mechanism involved in the unipolar signal response of the PbS-CQD/n-Si devices, we propose a model based on the band alignment in the heterojunctions, in addition to the distribution of photo-induced excess majority carriers across the junction. Given that the RC-LBIC technique is well suited to this context, the presence of these two distinct mechanisms (the bipolar and unipolar nature of the signals) needs to be considered in order to have a better interpretation of the data in the characterization of an array of homo/heterojunctions.

Origin of the Spin-Orbital Liquid State in a Nearly J=0 Iridate Ba3ZnIr2O9

We show using detailed magnetic and thermodynamic studies and theoretical calculations that the ground state of Ba3ZnIr2O9 is a realization of a novel spin-orbital liquid state. Our results reveal that Ba3ZnIr2O9 with Ir5+ (5d(4)) ions and strong spin-orbit coupling (SOC) arrives very close to the elusive J = 0 state but each Ir ion still possesses a weak moment. Ab initio density functional calculations indicate that this moment is developed due to superexchange, mediated by a strong intradimer hopping mechanism. While the Ir spins within the structural Ir2O9 dimer are expected to form a spin-orbit singlet state (SOS) with no resultant moment, substantial frustration arising from interdimer exchange interactions induce quantum fluctuations in these possible SOS states favoring a spin-orbital liquid phase down to at least 100 mK.

Atomistic Origin Of Rate-Dependent Serrated Plastic Flow In Metallic Glasses

Nanoindentation simulations on a binary metallic glass were performed under various strain rates by using molecular dynamics. The rate-dependent serrated plastic flow was clearly observed, and the spatiotemporal behavior of its underlying irreversible atomic rearrangement was probed. Our findings clearly validate that the serration is a temporally inhomogeneous characteristic of such rearrangements and not directly dependent on the resultant shear-banding spatiality. The unique spatiotemporal distribution of shear banding during nanoindentation is highlighted in terms of the potential energy landscape (PEL) theory.

On the origin of shear banding instability in metallic glasses

To uncover the physical origin of shear-banding instability in metallic glass (MG), a theoretical description of thermo-mechanical deformation of MG undergoing one-dimensional simple shearing is presented. The coupled thermo-mechanical model takes into account the momentum balance, the energy balance and the dynamics of free volume. The interplay between free-volume production and temperature increase being two potential causes for shear-banding instability is examined on the basis of the homogeneous solution. It is found that the free-volume production facilitates the sudden increase in the temperature before instability and vice versa. A rigorous linear perturbation analysis is used to examine the inhomogeneous deformation, during which the onset criteria and the internal length and time scales for three types of instabilities, namely free-volume softening, thermal softening and coupling softening, are clearly revealed. The shear-banding instability originating from sole free-volume softening takes place easier and faster than that due to sole thermal softening, and dominates in the coupling softening. Furthermore, the coupled thermo-mechanical shear-band analysis does show that an initial slight distribution of local free volume can incur significant strain localization, producing a shear band. During such a localization process, the local free-volume creation occurs indeed prior to the increase in local temperature, indicating that the former is the cause of shear localization, whereas the latter is its consequence. Finally, extension of the above model to include the shear-induced dilatation shows that such dilatation facilitates the shear instability in metallic glasses.