996 resultados para Lenclos, Ninon de, 1620-1705
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In September-October 1982, the Soviet ship "Sebastopolsky Rybak" conducted a cruise on the Sofala Bank in the area between 16°20'S and parallel 19°40'S. Two surveys were made, one from South to North (depth 10-110 meters) and vice versa. The type of coverage used was systematic. The Sofala Bank was divided into seven sub-areas. During this cruise sub-areas 3 and 4 were covered. Sub-area 5 has not been fully covered.
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From November 18th to December 17th 1982, the SRTM "Sebastopolsky Rybak" carried out research cruises on the Sofala Bank in the area between 16°20'S and parallel 19°40'S. The authors analyze data collected on biological characteristics, sexual maturity and localization of Penaeus indicus, Metapenaeus monoceros, Penaeus japonicus, Penaeus monodon and Penaeus latisulcatus.
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蛇毒丝氨酸蛋白酶属于糜蛋白酶样丝氨酸蛋白酶。蛇毒丝氨酸蛋白酶几乎可作用于哺乳 动物凝血, 纤溶系统的各个步骤而对凝血、纤溶、血小板功能、血管完整性以及出血等发生影响。蛇 毒丝氨酸蛋白酶具有高度的序列相似性一, 但底物专一性却具较大的分化另一方面, 它们对生理性丝氨酸蛋白酶抑制剂有较强的耐受性及较长的体内半衰期, 这些特性使之成为蛋白 酶结构与功能研究的优良模型, 同时也具广阔的药物开发前景和作为药理研究的工具。
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Strong, artificial pinning centres are required in superconducting films of large thickness for power applications in high magnetic fields. One of the methods for the introduction of pinning centres in such films is substrate decoration, i.e., growing nanoscale islands of certain materials on the substrate prior to the deposition of the superconducting film. Two other methods are building up a layered distribution of a second phase and homogeneous incorporation of second phase inclusions from a compositional target. In this paper, we compare the effectiveness of these methods in terms of the type of the self-assembly of nanoparticles. The comparison is made over a large set of YBa2Cu3O7 films of thickness up to 6.6 μm deposited with Au, Ag, Pd, LaNiO3, PrBa2Cu 3O7, YBCO, BaZrO3 and Gd2Ba 4CuWOy nanoparticles. It is found that substrate-decoration self-assembly is able to provide higher critical current in low magnetic field than the incorporation of homogeneous second phase in the sample microstructure. By specific modification of substrate decoration we achieved the self-field critical current per centimetre of width of 896 A/cm at 77.3 K and 1620 A/cm at 65 K in a film of thickness of 4.8 μm. © 2010 IOP Publishing Ltd.
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本发明涉及一种无指盘臭蛙抗菌肽及其应用,属于生物医学领域。无指盘臭蛙抗菌肽是从两栖类无指盘臭蛙分泌液中分离得到的一种环状多肽,分子量为 1705.3道尔顿,等电点为9.39,多肽全序列一级结构为:Leu Lys Gly Cys Trp The Lys Ser Ile Pro Pro Lys Pro Cys Phe(LKGCWTKSIPPKPCF),第四位和第十四位的的半胱氨酸形成分子内二硫键。其制备方法是:乙醚刺激无指盘臭蛙收集的分泌液离心去除沉淀,冷冻干燥后经凝胶过滤柱层析和反相高压液相色谱后分离纯化后得到。本发明的无指盘臭蛙抗菌肽具有对细菌、真菌、病毒有强烈活性抑制作用,及无溶血活性的优点,可作为制备治疗病原微生物感染疾病药物的应用。
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云南省是中国HIV-1感染最早和最为严重的地区之一,流行的HIV-1病毒亚型种类复杂多样。已有证据表明国内其它地区的HIV-1亚型很可能主要来源于云南省。本文对云南省的HIV-1亚型的流行情况进行综述,希望能为预防控制云南省乃至全国HIV-1的流行以及合理设计HIV-1疫苗提供基础信息。
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One of the major constraints in seabass (Lates calcarifer) culture is feed supply. Details are given of work conducted at AQD regarding the formulation of a 'standard' feed suitable for carnivorous species like the seabass and groupers. Diet formulae for seabass grow-out and for larval rearing are given.
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对行为的定义和描述是定量开展行为学研究的前提与基础。通过对人工饲养环境下长江江豚行为的观察、记录和分析,定义和描述了长江江豚近40种行为。在此基础上,初步构建了人工饲养环境下长江江豚行为学研究所必需的行为谱,由活跃的水面行为、玩耍、索食、社群行为、性行为、休息、摩擦、杂类八个类别组成。文中对某些行为可能具有的生物学意义进行了初步的分析和讨论。
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A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.
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Several vibrational bands were observed near 3100 cm(-1) in GaN that had been implanted with hydrogen at room temperature and subsequently annealed, Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that an decorated by hydrogen, The frequencies are close to those predicted recently for V-Ga-H-n complexes, leading us to tentatively assign the new lines to V-Ga defects decorated with different numbers of H atoms. (C) 1998 American Institute of Physics. [S0003-6951(98)03614-6].
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