969 resultados para III-V


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Among the different optical modulator technologies available such as polymer, III-V semiconductors, Silicon, the well-known Lithium Niobate (LN) offers the best trade-off in terms of performances, ease of use, and power handling capability [1-9]. The LN technology is still widely deployed within the current high data rate fibre optic communications networks. This technology is also the most mature and guarantees the reliability which is required for space applications [9].In or der to fulfil the target specifications of opto-microwave payloads, an optimization of the design of a Mach-Zehnder (MZ) modulator working at the 1500nm telecom wavelength was performed in the frame of the ESA-ARTES "Multi GigaHertz Optical Modulator" (MGOM) project in order to reach ultra-low optical insertion loss and low effective driving voltage in the Ka band. The selected modulator configuration was the X-cut crystal orientation, associated to high stability Titanium in-diffusion process for the optical waveguide. Starting from an initial modulator configuration exhibiting 9 V drive voltage @ 30 GHz, a complete redesign of the coplanar microwave electrodes was carried out in order to reach a 6 V drive voltage @ 30GHz version. This redesign was associated to an optimization of the interaction between the optical waveguide and the electrodes. Following the optimisation steps, an evaluation program was applied on a lot of 8 identical modulators. A full characterisation was carried out to compare performances, showing small variations between the initial and final functional characteristics. In parallel, two similar modulators were submitted to both gamma (10-100 krad) and proton irradiation (10.109 p/cm²) with minor performance degradation.

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In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p-n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I-V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I-V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.

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With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

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Since its invention in the 1950s, semiconductor solar cell technology has evolved in great leaps and bounds. Solar power is now being considered as a serious leading contender for replacing fossil fuel based power generation. This article reviews the evolution and current state, and potential areas of near future research focus, of leading inorganic materials based solar cells, including bulk crystalline, amorphous thin-films, and nanomaterials based solar cells. Bulk crystalline silicon solar cells continue to dominate the solar power market, and continued efforts at device fabrication improvements, and device topology advancements are discussed. III-V compound semiconductor materials on c-Si for solar power generation are also reviewed. Developments in thin-film based solar cells are reviewed, with a focus on amorphous silicon, copper zinc tin sulfide, cadmium telluride, as well as nanostructured Cadmium telluride. Recent developments in the use of nano-materials for solar power generation, including silicon and gallium arsenide nanowires, are also reviewed.

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The performance of tandem stacks of Group III?V multijunction solar cells continues to improve rapidly, both through improved performance of the individual cells in the stack and throughi ncrease in the number of stacked cells. As the radiative efficiency of these individual cells increases, radiative coupling between the stacked cells becomes an increasingly important factor not only in cell design, but also in accurate efficiency measurement and in determining performance of cells and systems under varying spectral conditions in the field. Past modeling has concentrated on electroluminescent coupling between the cells, although photoluminescent coupling is shown to be important for cells operating near their maximum power point voltage or below or when junction defect recombination is significant. Extension of earlier models i sproposed to allow this non-negligible component of luminescent coupling to be included. Therefined model is validated by measurement of the closely related external emission from both single and double junction cells.

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Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a photocarrier in a (III,V) semiconductors is determined by the polarization state of the laser. We show that the photocarrier spin can be irreversibly transferred to the collective magnetization, whose dynamics can consequently be flexibly controlled by suitably chosen laser pulses. As illustrations we demonstrate the feasibility of all optical ferromagnetic resonance and optical magnetization reorientation.

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PURPOSE: Malignant ascites is debilitating for patients with advanced cancer. As shown previously, tumour cell production of vascular endothelial growth factor might be a major cause of the formation of malignant ascites. Intraperitoneal bevacizumab could therefore be an option for symptom control in refractory ascites. PATIENTS AND METHODS: Patients with advanced gastrointestinal cancer and malignant ascites who had undergone paracentesis at least twice within the past 4 weeks were randomly assigned in a 2:1 ratio to intraperitoneal bevacizumab (400 mg absolute) or placebo after paracentesis. During the 8-week treatment period, a minimum interval of 14 d was kept between the applications of the study drug. Primary end-point was paracentesis-free survival (ParFS). RESULTS: Fifty-three patients (median age 63 years) were randomised. Forty-nine patients received at least one study drug application and qualified for the main analysis. The proportion of patients with at least one common toxicity criteria grade III-V event was similar with 20/33 (61%) on bevacizumab and 11/16 (69%) on placebo. Median ParFS was 14 d (95% confidence interval [CI]: 11-17) in the bevacizumab arm and 10.5 d (95% CI: 7-21) on placebo (hazard ratio 0.74, 95% CI: 0.40-1.37; P = 0.16). The longest paracentesis-free period was 19 d on bevacizumab (range 6-66 d) and 17.5 d in the placebo arm (range 4-42) (P = 0.85). Median overall survival was 64 d (95% CI: 45-103) on bevacizumab compared to 31.5 d (95% CI: 20-117) on placebo (P = 0.31). CONCLUSION: Intraperitoneal bevacizumab was well tolerated. Overall, treatment did not result in a significantly better symptom control of malignant ascites. However, patients defined by specific immune characteristics may benefit.

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Illustrated title pages.

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Part VII issued also as House doc. 485, 75th Cong., 3d sess. with title: Alaska--its resources and development. Message from the President of the United States transmitting in accordance with Concurrent Resolution 24, 1st session, 75th Congress, passed on August 21, 1937, a report on "Alaska--its resources and development."

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v. 1. Livre I -- v. 2. Livres II-III --v. 3. Livres IV-VI.

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Includes bibliographical references and indexes.

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"The first 157 sections were edited and translated by the late Richard Henebry, and sections 157to 232, by A. O'Kelleher in the Zeitschrift für celtische philologie III-V, IX and X, during the years 1901 to 1914."--Pref.