Electrical and Optical Properties of Znga2o4 Thin Films Deposited By Pulsed Laser Deposition

ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD) technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The conductivity of ZnGa2O4:Sn thin films was further improved on reduction.

Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

An Experimental Investigation of the Effect of Flange Angle on Radiation Patterns of V-Slot Waveguide Antenna

Results of exhaustive study of the effect of metallic flanges on H-plane radiation characteristics of V-slot waveguide antenna are presented . It has been established that the beam can be sharpened or broadened by varying the flange angle . The adjustment of the flange angle and flange width would further improve the radiation pattern , yielding optimum efficiency from the flanged system

A fibre optic evanescent wave sensor for monitoring the rate of pulsed laser deposition of metal thin films

A novel sensing technique for the in situ monitoring of the rate of pulsed laser deposition (PLD) of metal thin films has been developed. This optical fibre based sensor works on the principle of the evanescent wave penetration of waveguide modes into the uncladded portion of a multimode fibre. The utility of this optical fibre sensor is demonstrated in the case of PLD of silver thin films obtained by a Q-switched Nd:YAG laser which is used to irradiate a silver target at the required conditions for the preparation of thin films. This paper describes the performance and characteristics of the sensor and shows how the device can be used as an effective tool for the monitoring of the deposition rate of silver thin films. The fibre optic sensor is very simple, inexpensive and highly sensitive compared with existing techniques for thin film deposition rate measurements

A fibre optic evanescent wave sensor for monitoring the rate of pulsed laser deposition of metal thin films

A novel sensing technique for the in situ monitoring of the rate of pulsed laser deposition (PLD) of metal thin films has been developed. This optical fibre based sensor works on the principle of the evanescent wave penetration of waveguide modes into the uncladded portion of a multimode fibre. The utility of this optical fibre sensor is demonstrated in the case of PLD of silver thin films obtained by a Q-switched Nd:YAG laser which is used to irradiate a silver target at the required conditions for the preparation of thin films. This paper describes the performance and characteristics of the sensor and shows how the device can be used as an effective tool for the monitoring of the deposition rate of silver thin films. The fibre optic sensor is very simple, inexpensive and highly sensitive compared with existing techniques for thin film deposition rate measurements.

Dynamics of laser produced silver plasma under film deposition conditions studied using optical emission spectroscopy

Laser produced plasma from silver is generated using a Q-switched Nd:YAG laser. Optical emission spectroscopy is used to carry out time of flight (TOF) analysis of atomic particles. An anomalous double peak profile in the TOF distribution is observed at low pressure. A collection of slower species emerge at reduced pressure below 4 X lO-3 mbar and this species has a greater velocity spread. At high pressure the plasma expansion follows the shockwave model with cylindrical symmetry whereas at reduced pressure it shows unsteady adiabatic expansion (UAE). During UAE the species show a parabolic increases in the expansion time with radial distance whereas during shock wave expansion the exponent is less than one. The angular distribution of the ablated species in the plume is obtained from the measurement of optical density of thin films deposited on to glass substrates kept perpendicular to the plume. There is a sharp variation in the film thickness away from the film centre due to asymmetries in the plume.

An optical fibre based evanescent wave sensor to monitor the deposition rate of thin films

A novel fibre optic sensor for the in situ measurement of the rate of deposition of thin films has been developed. Evanescent wave in the uncladded portion of a multimode fibre is utilised for this sensor development. In the present paper we demonstrate how this sensor is useful for the monitoring of the deposition rate of polypyrrole thin films, deposited by an AC plasma polymerisation method. This technique is simple, accurate and highly sensitive compared with existing techniques.

Influence of Angle of Air Injection and Particles in Bed Hydrodynamics of Swirling Fluidized Bed

The thesis presented here unveils an experimental study of the hydrodynamic characteristics of swirling fluidized bed viz. pressure drop across the distributor and the bed, minimum fluidizing velocity, bed behaviour and angle of air injection. In swirling fluidized bed the air is admitted to the bed at an angle 'Ѳ' to the horizontal. The vertical component of the velocity v sin Ѳ causes fluidization and the horizontal component v cos Ѳ contributes to swirl motion of the bed material.The study was conducted using spherical particles having sizes 3.2 mm, 5.5 mm & 7.4 mm as the bed materials. Each of these particles was made from high density polyethylene, nylon and acetal having relative densities of 0.93, 1.05 and 1.47 respectively.The experiments were conducted using conidour type distributors having four rows of slits. Altogether four distributors having angles of air injection (Φ)- 0°, 5°, 10° & 15° were designed and fabricated for the study. The total number of slits in each distributor was 144. The area of opening was 6220 mm2 making the percentage area of opening to 9.17. But the percentage useful area of opening of the distributor was 96.The experiments on the variation of distributor pressure drop with superficial velocity revealed that the distributor pressure drop decreases with angle of air injection. Investigations related to bed hydrodynamics were conducted using 2.5 kg of bed material. The bed pressure drop measurements were made along the radial direction of the distributor at distances of 60 mm, 90 mm, 120 mm & 150 mm from the centre of the distributor. It was noticed that after attaining minimum fluidizing velocity, the bed pressure drop increases along the radial direction of the distributor. But at a radial distance of 90 mm from the distributor centre, after attaining minimum fluidizing velocity the bed pressure drop remains almost constant. It was also observed that the bed pressure drop varies inversely with particle size as well as particle density.An attempt was made to determine the effect of various parameters on minimum fluidizing velocity. It was noticed that the minimum fluidizing velocity varies directly with angle of air injection (Φ), particle size and particle density.The study on the bed behaviour showed that the superficial velocity required for initiating various bed phenomena (such as swirl motion and separation of particles from the cone at the centre) increase with increase in particle size as well as particle density. It was also observed that the particle size and particle density directly influence the superficial velocity required for various regimes of bed behaviour such as linear variation of bed pressure drop, constant bed pressure drop and sudden increase or decrease in bed pressure drop.Experiments were also performed to study the effect of angle of air injection (Φ). It was noticed that the bed pressure drop decreases with angle of air injection. It was also noticed that the angle of air injection directly influence the superficial velocity required for initiating various bed phenomena as well as the various regimes of bed behaviour.

Highly conductive and transparent ZnO thin film using Chemical Spray Pyrolysis technique: Effect of doping and deposition parameters

In the present work we report the preparation details studies on ZnO thin films. ZnO thin films are prepared using cost effective deposition technique viz., Chemical Spray Pyrolysis (CSP). The method is very effective for large area preparation of the ZnO thin film. A new post-deposition process could also be developed to avoid the adsorption of oxygen that usually occurs after the spraying process i.e., while cooling. Studies were done by changing the various deposition parameters for optimizing the properties of ZnO thin film. Moreover, different methods of doping using various elements are also tried to enhance the conductivity and transparency of the film to make these suitable for various optoelectronic applications.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Depinning transition of dislocation assemblies: Pileups and low-angle grain boundaries

We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low-angle grain boundaries interacting with a disordered stress landscape provided by solute atoms, or by other immobile dislocations present in nonactive slip systems. Using linear elasticity, we compute the stress originated by small deformations of these assemblies and the corresponding energy cost in two and three dimensions. Contrary to the case of isolated dislocation lines, which are usually approximated as elastic strings with an effective line tension, the deformations of a dislocation assembly cannot be described by local elastic interactions with a constant tension or stiffness. A nonlocal elastic kernel results as a consequence of long-range interactions between dislocations. In light of this result, we revise statistical depinning theories of dislocation assemblies and compare the theoretical results with numerical simulations and experimental data.

Plasma Assisted Deposition Technique for Synthesis of low Dielectric Constant Polyanisidine Thin Films

Plasma Science, 2002. ICOPS 2002. IEEE Conference Record-Abstracts. The 29th IEEE International Conference on