Crescimento de filmes nanométricos monocristalinos de Fe/MgO(100) por "SPUTTERING" DC

The research behind this master dissertation started with the installation of a DC sputtering system, from its first stage, the adaptation of a refrigerating system, passing by the introduction of a heating system for the chamber using a thermal belt, until the deposition of a series of Fe/MgO(100) single crystal nanometric film samples. The deposition rates of some materials such as Fe, Py and Cu were investigated through an Atomic Force Microscope (AFM). For the single crystal samples, five of them have the same growth parameters and a thickness of 250Å, except for the temperature, which varies from fifty degrees from one to another, from 100ºC to 300ºC. Three other samples also have the same deposition parameters and a temperature of 300ºC, but with thickness of 62,5Å, 150Å, and 250Å. Magneto-optical Kerr Effect (MOKE) of the magnetic curves measurements and Ferromagnetic Resonance (FMR) were made to in order to study the influence of the temperature and thickness on the sample s magnetic properties. In the present dissertation we discuss such techniques, and the experimental results are interpreted using phenomenological models, by simulation, and discussed from a physical point of view, taking into account the system s free magnetic energy terms. The results show the growth of the cubic anisotropy field (Hac) as the sample s deposition temperature increases, presenting an asymptotic behavior, similar to the characteristic charging curve of a capacitor in a RC circuit. A similar behavior was also observed for the Hac due to the increase in the samples thicknesses. The 250˚A sample, growth at 300°C, presented a Hac field close to the Fe bulk value

Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Growth evolution of ZnO thin films deposited by RF magnetron sputtering

We study the surface morphology evolution of ZnO thin films grown on glass substrates as a function of thickness by RF magnetron sputtering technique. The surface topography of the samples is measured by atomic force microscopy (AFM). All AFM images of the films are analyzed using scaling concepts. The results show that the surface morphology is initially formed by a small grains structure. The grains increase in size and height with growth time resulting in the formation of a mounds-like structure. The growth exponent, beta, and the exponent defining the evolution of the characteristic wavelength of the surface, p, amounted to beta = 0.76 +/- 0.08 and p = 0.3 +/- 0.05. From these exponents, the surface morphology is determined by the nonlocal shadowing effects, that is the dominant mechanism, due to the incident deposition particles during film growth.

Columnar microstructure of nanocrystalline Ga1-xMnxN films deposited by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and Electronic Effects of Incorporating Mn in TiO2 Films Grown by Sputtering: Anatase versus Rutile

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N films deposited by reactive sputtering

We have focused on the optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N (0.00 <= x <= 0.18) films deposited by reactive RF magnetron sputtering. The films obtained are nanocrystalline with grain sizes of about 25 nm, having wurtzite structure and strong orientation texture in the c-axis direction. The optical characterizations of the absorption edges were obtained in the 190-2600 nm spectral range. The increase of the Mn content causes an increase of the absorption coefficient which can be clearly noticed at low energies, and a quasi-linear decrease of the optical gap. Broad absorption bands observed around similar to 1.3 and similar to 2.2 eV were associated with transitions between the Mn acceptor level and the valence and conduction bands, respectively. The observed changes in the optical properties due to the Mn incorporation observed in these nanocrystalline films are similar to those reported for ferromagnetic GaMnN single-crystal films.

Enhancement of optical absorption by modulation of the oxygen flow of TiO2 films deposited by reactive sputtering

Oxygen-deficient TiO2 films with enhanced visible and near-infrared optical absorption have been deposited by reactive sputtering using a planar diode radio frequency magnetron configuration. It is observed that the increase in the absorption coefficient is more effective when the O-2 gas supply is periodically interrupted rather than by a decrease of the partial O-2 gas pressure in the deposition plasma. The optical absorption coefficient at 1.5 eV increases from about 1 x 10(2) cm(-1) to more than 4 x 10(3) cm(-1) as a result of the gas flow discontinuity. A red-shift of similar to 0.24 eV in the optical absorption edge is also observed. High resolution transmission electron microscopy with composition analysis shows that the films present a dense columnar morphology, with estimated mean column width of 40nm. Moreover, the interruptions of the O-2 gas flow do not produce detectable variations in the film composition along its growing direction. X-ray diffraction and micro-Raman experiments indicate the presence of the TiO2 anatase, rutile, and brookite phases. The anatase phase is dominant, with a slight increment of the rutile and brookite phases in films deposited under discontinued O-2 gas flow. The increase of optical absorption in the visible and near-infrared regions has been attributed to a high density of defects in the TiO2 films, which is consistent with density functional theory calculations that place oxygen-related vacancy states in the upper third of the optical bandgap. The electronic structure calculation results, along with the adopted deposition method and experimental data, have been used to propose a mechanism to explain the formation of the observed oxygen-related defects in TiO2 thin films. The observed increase in sub-bandgap absorption and the modeling of the corresponding changes in the electronic structure are potentially useful concerning the optimization of efficiency of the photocatalytic activity and the magnetic doping of TiO2 films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724334]

Synthesis and characterization of Fe(III)-doped ceramic membranes of titanium dioxide and its application in photoelectrocatalysis of a textile dye

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Comparison of fracture surface and plane section analysis for ceramic grain size characterisation

A method has been developed to obtain quantitative information about grain size and shape from fractured surfaces of ceramic materials. One elaborated a routine to split intergranular and transgranular grains facets of ceramic fracture surfaces by digital image processing. A commercial ceramic (ALCOA A-16, Al2O3-1.5% of CrO) was used to test the proposed method. Microstructural measurements of grain shape and size taken from fracture surfaces have been compared through descriptive statistics of distributions, with the corresponding measurements from polished and etched surfaces. The agreement between results, with the expected bias on grain size values from fractures, obtained for both types of surfaces allowed to infer that this new technique can be used to extract the relevant microstructural information from fractured surfaces, thus minimising the time consuming steps of sample preparation. (C) 2003 Elsevier Ltd. All rights reserved.

Conventional and microwave sintering of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites: non-ohmic and dielectric properties

The non-ohmic and dielectric properties as well as the dependence on the microstructural features of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites obtained by conventional and microwave sintering were investigated. It was demonstrated that the non-ohmic and dielectric properties depend strongly on the sintering conditions. It was found that the non-linear coefficient reaches values of 65 for microwave-sintered samples and 42 for samples sintered in a conventional furnace when a current density interval of 1-10 mA cm(-2) is considered. The non-linear coefficient value of 65 is equivalent to 1500 for samples sintered in the microwave if a current interval of 5-30 mA is considered as is shortly discussed by Chung et al (2004 Nature Mater. 3 774). Due to a high non-linear coefficient and a low leakage current (90 mu A) under both processing conditions, these samples are promising for varistor applications. The conventionally sintered samples exhibit a higher relative dielectric constant at 1 kHz (2960) compared with the samples sintered in the microwave furnace (2100). At high frequencies, the dielectric constant is also larger in the samples sintered in the conventional furnace. Depending on the application, one or another synthesis methodology is recommended, that is, for varistor applications sintered in a microwave furnace and for dielectric application sintered in a conventional furnace.

The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural phase transitions of PbZr0.52Ti0.48O3 ceramic: An infrared spectroscopy study

The recent discovery of a ferroelectric monoclinic phase in the PbZr1-xTixO3 (PZT) system attained the attention of several researchers due to the possibility of understanding the relationships between structural features and piezoelectric properties. The nature of the monoclinic phase in some PZT compositions remains controversial and unclear. In this work, structural phase transitions of PbZr0.52Ti0.48O3 ceramic were investigated by infrared spectroscopy as a function of temperature. Studies were centered on nu(1)-stretching modes and corresponding half width Wi as a function of temperature. The occurrence of the anomalies in the infrared spectra as a function of temperature suggests the following monoclinic ( LT) -> monoclinic ( HT) -> tetragonal phase transition were observed at 183 K and at 263 K.

Synthesis of slightly < 111 >-oriented 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) ceramic prepared from fine powders

Slightly < 111 >-oriented 0.65Pb(Mg1/3Nb2/3)03-0.35PbTiO(3) ceramic was prepared using fine powders obtained by means of an alternative and promising chemical oxide precursor method. High quality samples with improved structural, microstructural, dielectric and ferroelectric properties were obtained. The dielectric constant value (epsilon similar to 2577) measured at 1 kHz is compared to unpoled < 112 > grain-oriented ceramics while the remanent polarization (P-r similar to 19-1 mu cm(-2)) is compared with random grain-oriented ceramics. These results point out the viability to produce ferroelectric PMN-PT ceramics of very good quality using powder precursors prepared from this chemical method. (c) 2007 Elsevier B.V. All rights reserved.

Dielectric and pyroelectric properties of a composite of ferroelectric ceramic and polyurethane

Flexible piezo- and pyroelectric composite was made in the thin film form by spin coating. Lead Zirconate Titanate (PZT) ceramic powder was dispersed in a castor oil-based polyurethane (PU) matrix, providing a composite with 0-3 connectivity. The dielectric data, measured over a wide range of frequency (10(-5) Hz to 105 Hz), shows a loss peak around 100 Hz related with impurities in the polymer matrix. There is also an evidence of a peak in the range 10(-4) Hz, possibly originating from the glass transition temperature T of the polymer. The pyroelectric coefficient at 34 K is 7.0x10(-5) C(.)m(-2.)K(-1) which is higher than that of P-PVDF (1X10(-5) C(.)m(-2.)K(-1)).