Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy

Tensile-strained InAlAs layers have been grown by solid-source molecular beam epitaxy on as-grown Fe-doped semi-insulating (SI) InP substrates and undoped SI InP substrates obtained by annealing undoped conductive InP wafers (wafer-annealed InP). The effect of the two substrates on InAlAs epilayers and InAlAs/InP type II heterostructures has been studied by using a variety of characterization techniques. Our calculation data proved that the out-diffusion of Fe atoms in InP substrate may not take place due to their low diffusion, coefficient. Double-crystal X-ray diffraction measurements show that the lattice mismatch between the InAlAs layers and the two substrates is different, which is originated from their different Fe concentrations. Furthermore, photoluminescence results indicate that the type II heterostructure grown on the wafer-annealed InP substrate exhibits better optical and interface properties than that grown on the as-grown Fe-doped substrate. We have also given a physically coherent explanation on the basis of these investigations. (C) 2003 Elsevier Science B.V. All rights reserved.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

主成分分析和聚类分析在软件重构中的应用

重构是软件系统不断演化的关键之一,也是一项复杂而又困难的活动.传统的定位重构代码方法依赖开发者的观察和主观意识,耗时耗力,尤其在重构代码较多时.因此,提出了一套自动化定位重构的方法.该方法利用基于面向对象软件度量指标获取代码特征信息,使用相关性检验查验特征信息数据,应用主成分分析压缩和解释特征信息,应用聚类分析分类相似代码段,迅速准确定位重构.一个简单的实例表明该方法是简单有效的,并且优于传统方法.

基于半监督学习的P2P协议识别

随着P2P技术的发展,网络上充满了大量的P2P应用。协议加密技术的发展,使得P2P应用的识别和管理变得非常困难。描述了如何运用半监督的机器学习理论,根据传输层的特征,用聚类算法训练数据并建立一个高效的在线协议识别器,用于在内核协议层对协议特别是P2P协议进行识别,并对BitComet和Emule进行了实验,得到了很高的识别准确率(80%)。研究并解决了将选取好的特征用于聚类并高效地实现最后的协议识别器。

保水剂用量对土壤水分的影响

为确定保水剂的合理用量,于2008年5月在陕西米脂县进行保水剂不同用量玉米盆栽试验研究。盆栽试验设置了保水剂不同用量(0、30、40、50、60 g)五个处理及保水剂与风干黄绵土配比用量(0、0.05%、0.10%、0.15%、0.20%、0.30%)6个处理,分别研究了保水剂不同用量与土壤水势、土壤含水量的关系及对土壤持水时间的影响。试验结果表明,土壤含水量高(>18%)时各处理土壤水吸力十分接近,在土壤吸水力相同时,随着保水剂用量的提高其土壤含水量也随着提高;保水剂用量越大的处理玉米存活的时间也越长,0.20%和0.30%处理玉米存活时间较对照长3 d;综合分析表明本试验中保水剂与黄绵土配比0.20%和0.3%应用效果较好。

西沙、南沙和中沙群岛进一步开发的设想

论述了西、南、中沙群岛区位的重要性，该区陆地小而海洋国土大，拥有丰富