968 resultados para radiation absorption analysis
Resumo:
This paper presents a statistical approach to the electromagnetic analysis of a system that lies within a reverberant cavity that has random or uncertain properties. The need to solve Maxwell's equations within the cavity is avoided by employing a relation known as the diffuse field reciprocity principle, which leads directly to the ensemble mean squared response of the system; all that is required is the impedance matrix of the system associated with radiation into infinite space. The general theoretical approach is presented, and the analysis is then applied to a five-cable bundle in a reverberation room © 2013 EMC Europe Foundation.
Resumo:
Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700°C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices. © 2013 IEEE.
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Photosynthesis by phytoplankton cells in aquatic environments contributes to more than 40% of the global primary production (Behrenfeld et al., 2006). Within the euphotic zone (down to 1% of surface photosynthetically active radiation [PAR]), cells are exposed not only to PAR (400-700 nm) but also to UV radiation (UVR; 280-400 nm) that can penetrate to considerable depths (Hargreaves, 2003). In contrast to PAR, which is energizing to photosynthesis, UVR is usually regarded as a stressor (Hader, 2003) and suggested to affect CO2-concentrating mechanisms in phytoplankton (Beardall et al., 2002). Solar UVR is known to reduce photosynthetic rates (Steemann Nielsen, 1964; Helbling et al., 2003), and damage cellular components such as D1 proteins (Sass et al., 1997) and DNA molecules (Buma et al., 2003). It can also decrease the growth (Villafane et al., 2003) and alter the rate of nutrient uptake (Fauchot et al., 2000) and the fatty acid composition (Goes et al., 1994) of phytoplankton. Recently, it has been found that natural levels of UVR can alter the morphology of the cyanobacterium Arthrospira (Spirulina) platensis (Wu et al., 2005b). On the other hand, positive effects of UVR, especially of UV- A (315-400 nm), have also been reported. UV- A enhances carbon fixation of phytoplankton under reduced (Nilawati et al., 1997; Barbieri et al., 2002) or fast-fluctuating (Helbling et al., 2003) solar irradiance and allows photorepair of UV- B-induced DNA damage (Buma et al., 2003). Furthermore, the presence of UV-A resulted in higher biomass production of A. platensis as compared to that under PAR alone (Wu et al., 2005a). Energy of UVR absorbed by the diatom Pseudo-nitzschia multiseries was found to cause fluorescence (Orellana et al., 2004). In addition, fluorescent pigments in corals and their algal symbiont are known to absorb UVR and play positive roles for the symbiotic photosynthesis and photoprotection (Schlichter et al., 1986; Salih et al., 2000). However, despite the positive effects that solar UVR may have on aquatic photosynthetic organisms, there is no direct evidence to what extent and howUVR per se is utilized by phytoplankton. In addition, estimations of aquatic biological production have been carried out in incubations considering only PAR (i. e. using UV-opaque vials made of glass or polycarbonate; Donk et al., 2001) without UVR being considered (Hein and Sand-Jensen, 1997; Schippers and Lurling, 2004). Here, we have found that UVR can act as an additional source of energy for photosynthesis in tropical marine phytoplankton, though it occasionally causes photoinhibition at high PAR levels. While UVR is usually thought of as damaging, our results indicate that UVR can enhance primary production of phytoplankton. Therefore, oceanic carbon fixation estimates may be underestimated by a large percentage if UVR is not taken into account.
Resumo:
A rapid and sensitive method for separation and determination of Cr(VI) and Cr(III) in bottom mud of lake by flow injection on-line preconcentrtion system and GFAAS was developed. The available Cr(VI) and Cr(III) were extracted by HOAc or EDTA + NH4 NO3 and adsorbed simultaneously by an anion and a cation resin microclummn and then eluted simultaneously by 2 mol/L NH4 NO3 + 0.05 mol/L ascorbate and 2 mol/L H2SO4, respectively. The elution was performed for 50 s after adsorption for 2 min, and the efficiencies of elution were 85.4% - 94.8% and 96.7% - 106% for Cr(VI) and Cr(M) respectively. The detection limits of the method were 0.9 mu g/L and 2.7 mu g/L with relative standard deviations of 3.5% and 6.4% for the determination of Cr(VI) and Cr(III) in sample, respectively.
Resumo:
The attenuation coefficient of photosynthetically available radiation [K-d(PAR)] and three water quality parameters [chlorophyll a (chl a)], chromophoric dissolved organic matter (CDOM) and tripton] were measured at three stations in shallow, subtropical Lake Donghu from April 2003 to March 2004. The multiple regression equation of K-d(PAR) versus chl a, CDOM, and tripton was: K-d(PAR) = 0.44 + 0.019 chl a + 1.88 CDOM + 0.016 tripton, which revealed the relative contributions of the three parameters to K-d(PAR). The effects of water and CDOM on K-d(PAR) were of minor importance (19-26%), while chl a and tripton were the two greatest contributors, accounting collectively for 74-81%.
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SINE (short interspersed element) insertion analysis elucidates contentious aspects in the phylogeny of toothed whales and dolphins (Odontoceti), especially river dolphins. Here, we characterize 25 informative SINEs inserted into unique genomic loci during evolution of odontocetes to construct a cladogram. and determine a total of 2.8 kb per taxon of the flanking sequences of these SINE loci to estimate divergence times among lineages. We demonstrate that: (i) Odontocetes are monophyletic; (ii) Ganges River dolphins, beaked whales, and ocean dolphins diverged (in this order) after sperm whales; (iii) three other river dolphin taxa, namely the Amazon, La Plata, and Yangtze river dolphins, form a monophyletic group with Yangtze River dolphins being the most basal; and (iv) the rapid radiation of extant cetacean lineages occurred some 28-33 million years B.P., in strong accord with the fossil record. The combination of SINE and flanking sequence analysis suggests a topology and set of divergence times for odontocete relationships, offering alternative explanations for several long-standing problems in cetacean evolution.
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Phylogenetic relationships within Metapenaeopsis remain largely unknown. The modern revision of the genus suggests that the shape of the petasma, followed by the presence of a stidulating organ, are the most important distinguishing taxonomic features. In the present study, phylogenetic relationships were studied among seven Metapenaeopsis species from the Indo-West Pacific based on partial sequences of mitochondrial 16S rRNA and cytochrome c oxidase I (COI) genes. Mean sequence divergence was 6.4% for 16S and 15.8% for COI. A strikingly large nucleotide distance (10.0% for 16S and 16.9% for COI) was recorded between M. commensalis, the only Indo-West Pacific species with a one-valved petasma, and the other species with a two-valved petasma. Phylogenetic analyses using neighbor-joining, maximum parsimony, and maximum likelihood generated mostly identical tree topologies in which M. commensalis is distantly related to the other species. Two clades were resolved for the remaining species, one with and the other without a stridulating organ, supporting the main groupings of the recent taxonomic revision. Results of the present study also indicate that the deep-water forms represent a relatively recent radiation in Metapenaeopsis.
Resumo:
Strongly vertically coupled InAs/GaAs quantum dots (QDs) with modulation doping are investigated, and polarization dependence of two-color absorptions was observed. Analysis of photoluminescence (PL) and absorption spectra shows that s-polarized absorptions at. 10.0 and 13.4 mu m, stem from the first excited state E-1 and the second excited state E-2 in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively, whereas p-polarized absorptions at 10.0 and 8.2 mu m stem from the first excited state E-1 and the ground E-g in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively. These measurements illustrate that transitions from excited states are more sensitive to normal incidence, which are very important in designing QD infrared detector. (C) 2007 Elsevier B.V. All rights reserved.
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Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.
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In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.
Resumo:
The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well ( DWELL ) detectors are performed in the framework of effective-mass envelope- function theory. In contrast to InAs/ GaAs quantum dot (QD) structures, the calculated band structure of DWELL quantitatively confirms that an additional InGaAs quantum well effectively lowers the ground state of InAs QDs relative to the conduction-band edge of GaAs and enhances the confinement of electrons. By changing the doping level, the dominant optical transition can occur either between the bound states in the dots or from the ground state in the dots to bound states in the well, which corresponds to the far-infrared and long-wave infrared (LWIR ) peaks in the absorption spectra, respectively. Our calculated results also show that it is convenient to tailor the operating wavelength in the LWIR atmospheric window ( 8 - 12 mu m ) by adjusting the thickness of the InGaAs layer while keeping the size of the quantum dots fixed. Theoretical predictions agree well with the available experimental data. (c) 2005 American Institute of Physics.
Resumo:
The effect of proton radiation on a superluminescent diode (SLD) was studied, and the radiation damage from different energies was compared. The results reveal that the optical power degradation is greater from 350 KeV protons than from 1 MeV protons. Analysis of SLD characteristics after irradiation shows that the main effect of radiation is damage within the active region. At the same time, the results also show that quantum-well (QW) SLDs are far less sensitive to radiation than double-heterojunction (DH) SLDs. (C) 2007 Elsevier B.V. All rights reserved.
Resumo:
Nanocomposite films consisting of nanosized Ag particles embedded in partially oxidized amorphous Si-containing matrices were prepared by radio frequency magnetron co-sputtering deposition. We studied the influence of ambient atmosphere during the preparation and heat-treatment of Ag/SiOx (0 less than or equal to x less than or equal to 2) nanocompositefilm on its optical absorption properties. We found that the plasmon resonance absorption peak shifts to shorter wavelengths with the increasing oxygen content in the SiOx matrix. The analysis indicates that the potential barrier between Ag nanoparticles and SiOx matrix increases with the increasing x value, which will induce the surface resonance state to shift to higher energy. The electrons in the vicinity of the Fermi level of Ag nanoparticles must absorb more energy to be transferred to the surface resonance state with the increasing x value. It was also found that the plasmon resonance absorption peaks of the samples annealed in different ambient atmospheres are located at about the same position. This is because the oxidation surface layer is dense enough to prevent the oxygen from penetrating into the sample to oxidize the silicon in the inner layer.
Resumo:
Ag/Si nanocomposite films were prepared by the radio-frequency magnetron cosputtering method. The fine structure of the plasmon resonance absorption peak was found in film samples. X-ray photoelectron spectroscopy analysis indicated that the samples were composed of a two-layer structure, which accounted for the structure of the optical absorption spectra. The peak located near 445 nm is the plasmon resonance absorption peak of Ag nanoparticles embedded in a partially oxidized Si matrix. Its intensity decreases with decreasing film thickness and disappears in a very thin sample. The peak located near 380 nm originates from the plasmon resonance absorption of the thoroughly oxidized surface layer of the sample. Its intensity does not change with increasing thickness, but it cannot be observed in the very thick sample. (C) 2001 American Institute of Physics.
Resumo:
GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making 3-5 um photovoltaic infrared (IR) detectors with a peak detectivity of 5 x 10(11) cm Hz(1/2)/W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray analysis to determine successfully the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spectra of the linear array of the detectors are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region. The spectral response of the IR photocurrent of the devices is also measured and compared with the temperature dependent IR absorption of the DBQW samples in order to get a better understanding of the bias-controlled optical and transport behavior of the detector photoresponse and thus to optimize the detector performance. (C) 1999 Elsevier Science Ltd. All rights reserved.