Infrared emission and defect centres in Er and Yb codoped Y(3)Al(5)O(12) phosphors

YAG phosphor powders doped/codoped with Er(3+)/(Er(3+) + Yb(3+)) have been synthesised by using the solution combustion method. The effect of direct pumping into the (4)I(11/2) level under 980 nm excitation of doped/codoped Er(3+)/Yb(3+)-Er(3+) in Y(3)Al(5)O(12) (YAG) phosphor responsible for an infrared (IR) emission peaking at similar to 1.53 mu m corresponding to the (4)I(13/2)->(4)I(15/2) transition has been studied. YAG exhibits three thermally-stimulated luminescence (TSL) peaks at around 140A degrees C, 210A degrees C and 445A degrees C. Electron spin resonance (ESR) studies were carried out to identify the centres responsible for the TSL peaks. The room temperature ESR spectrum of irradiated phosphor appears to be a superposition of two distinct centres. One of the centres (centre I) with principal g-value 2.0176 is identified as O(-) ion, while centre II with an isotropic g-factor 2.0020 is assigned to an F(+) centre (singly ionised oxygen vacancy). An additional defect centre is observed during thermal-annealing experiments and this centre (assigned to F(+) centre) seems to originate from an F-centre (oxygen vacancy with two electrons) and these two centres appear to correlate with the observed high-temperature TSL peak in YAG phosphor.

NIR to visible up-conversion, infrared luminescence, thermoluminescence and defect centres in Y(2)O(3) : Er phosphor

Er(3+) doped Y(2)O(3) phosphor was prepared by the solution combustion method and characterized using powder x-ray diffraction and energy-dispersive analysis of x-ray mapping studies. Room temperature near infrared (NIR) to green up-conversion (UC) emissions in the region 520-580 nm {((2)H(11/2), (4)S(3/2)) -> (4)I(15/2)} and red UC emissions in the region 650-700 nm ((4)F(9/2) -> (4)I(15/2)) of Er(3+) ions have been observed upon direct excitation to the (4)I(11/2) level using similar to 972 nm laser radiation of nanosecond pulses. The possible mechanisms for the UC processes have been discussed on the basis of the energy level scheme, the pump power dependence as well as based on the temporal evolution. The excited state absorption is observed to be the dominant mechanism for the UC process. Y(2)O(3) : Er exhibits one thermally stimulated luminescence (TSL) peak around 367 degrees C. Electron spin resonance (ESR) studies were carried out to study the defect centres induced in the phosphor by gamma irradiation and also to identify the centres responsible for the TSL peak. Room temperature ESR spectrum of irradiated phosphor appears to be a superposition of at least three distinct centres. One of them (centre I) with principal g-values g(parallel to) = 2.0415 and g(perpendicular to) = 2.0056 is identified as O(2)(-) centre while centre II with an isotropic g-factor 2.0096 is assigned to an F(+)-centre (singly ionized oxygen vacancy). Centre III is also assigned to an F(+)-centre with a small g-factor anisotropy (g(parallel to) = 1.974 and g(perpendicular to) = 1.967). Additional defect centres are observed during thermal annealing experiments and one of them appearing around 330 degrees C grows with the annealing temperature. This centre (assigned to an F(+)-centre) seems to originate from an F-centre (oxygen vacancy with two electrons) and the F-centre appears to correlate with the observed TSL peak in Y2O3 : Er phosphor. The trap depth for this peak has been determined to be 0.97 eV from TSL data.

Influence from the sulfonate group (RSO(3)(-)) on the conversion process and emission efficiency of poly(p-phenylene vinylene)

The discovery of an alternative route to convert poly(xylyliden tetrahydrothiophenium chloride) (PTHT) into poly(p-phenylene vinylene) (PPV) using dodecylbenzenesulfonate (DBS) has allowed the formation of ultrathin films with unprecedented control of architecture and emission properties. In this work, we show that this route may be performed with several sufonated compounds where RSO(3)(-) replaces the counter-ion (Cl(-)) of PTHT, some of which are even more efficient than DBS. Spin-coating films were produced from PTHT and azo-dye molecules, an azo-polymer and organic salts as counter-ions of PTHT. The effects of the thermal annealing step of PTHT/RSO(3)(-) films at 110 and 230 degrees C were monitored by measuring the absorption and emission spectra. The results indicate that the exchange of the counterion Cl(-) of PTHT by a linear long chain with RSO(3)(-) group is a general procedure to obtain PPV polymer at lower conversion temperature (ca. 110 degrees C) with significant increase in the emission efficiency, regardless of the chemical position and the number of sulfonate groups. With the enhanced emission caused by Congo Red and Tinopal as counter-ions, it is demonstrated that the new synthetic route is entirely generic, which may allow accurate control of conversion and emission properties. (C) 2010 Elsevier B.V. All rights reserved.

Influence of chromium concentration on the optical-electronic properties of ruby microstructures

Films of amorphous aluminium nitride (AlN) were prepared by conventional radio frequency sputtering of an Al + Cr target in a plasma of pure nitrogen. The Cr-to-Al relative area determines the Cr content, which remained in the similar to 0-3.5 at% concentration range in this study. Film deposition was followed by thermal annealing of the samples up to 1050 degrees C in an atmosphere of oxygen and by spectroscopic characterization through energy dispersive x-ray spectrometry, photoluminescence and optical transmission measurements. According to the experimental results, the optical-electronic properties of the Cr-containing AlN films are highly influenced by both the Cr concentration and the temperature of the thermal treatments. In fact, thermal annealing at 1050 degrees C induces the development of structures that, because of their typical size and distinctive spectral characteristics, were designated by ruby microstructures (RbMSs). These RbMSs are surrounded by a N-rich environment in which Cr(3+) ions exhibit luminescent features not present in other Cr(3+)-containing systems such as ruby, emerald or alexandrite. The light emissions shown by the RbMSs and surroundings were investigated according to the Cr concentration and temperature of measurement, allowing the identification of several Cr(3+)-related luminescent lines. The main characteristics of these luminescent lines and corresponding excitation-recombination processes are presented and discussed in view of a detailed spectroscopic analysis.

Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films

The need of efficient (fast and low consumption) optoelectronic devices has always been the driving force behind the investigation of materials with new or improved properties. To be commercially attractive, however, these materials should be compatible with our current micro-electronics industry and/or telecommunications system. Silicon-based compounds, with their matured processing technology and natural abundance, partially comply with such requirements-as long as they emit light. Motivated by these issues, this work reports on the optical properties of amorphous Si films doped with Fe. The films were prepared by sputtering a Si+Fe target and were investigated by different spectroscopic techniques. According to the experimental results, both the Fe concentration and the thermal annealing of the samples induce changes in their atomic structure and optical-electronic properties. In fact, after thermal annealing at similar to 750 degrees C, the samples partially crystallize with the development of Si and/or beta-FeSi(2) crystallites. In such a case, certain samples present light emission at similar to 1500 nm that depends on the presence of beta-FeSi(2) crystallites and is very sensitive to the annealing conditions. The most likely reasons for the light emission (or absence of it) in the considered Fe-doped Si samples are presented and discussed in view of their main structural-electronic characteristics. (C) 2011 Elsevier Ltd. All rights reserved.

Efeitos quimicos do recuo do cromo em alguns complexos hexacoordenados no estado solido

Os efeitos químicos do recuo do 51Cr formado pela reação (n,y) foram investigados nos compostos: [Cr(NH3) 5ONO] (NO3)2, [Cr(NH3) 5NO3] (NO3)2 e [Cr(NH3)5 NCS] (NO3)2, irradiados no estado sólido. Após dissolução dos cristais, os fragmentos resultantes da irradiação foram analisados por cromatografia com resina trocadora de íons e eletroforese em papel. A distribuição inicial das espécies é discutida em termos da formação de complexos polinucleares e da não ocorrência de conversão interna em compostos de cromo (III). Os efeitos de reversão térmica indicam uma considerável influência do oxigênio atmosférico e de defeitos cristalinos no comportamento químico das espécies.

Filmes finos dielétricos para dispositivos microeletrônicos avançados

Apresentamos mecanismos de formação e de degradação térmica de filmes fi- nos (espessura da ordem de 10 nm) de diferentes dielétricos sobre substrato de silício monocristalino. Tendo em vista a aplicação dessas estruturas em MOSFETs (transistores de efeito de campo metal-óxido-semicondutor), estudamos o consagrado óxido de silício (SiO2), os atuais substitutos oxinitretos de silício (SiOxNy) e o possível substituto futuro óxido de alumínio (Al2O3). Nossos resultados experimentais baseiam-se em técnicas preparativas de substituição isotópica e de caracterização física com feixes de íons (análise com reações nucleares) ou raios- X (espectroscopia de fotoelétrons). Observamos que: (a) átomos de silício não apresentam difusão de longo alcance (além de ~ 2 nm) durante o crescimento de SiO2 por oxidação térmica do silício em O2; (b) nitretação hipertérmica é capaz de produzir filmes finos de oxinitreto de silício com até dez vezes mais nitrogênio que o resultante do processamento térmico usual, sendo que esse nitrogênio tende a se acumular na interface SiOxNy/Si; e (c) átomos de oxigênio, alumínio e silício migram e promovem reações químicas durante o recozimento térmico de estruturas Al2O3/SiO2/Si em presença de O2. Desenvolvemos um modelo de difusão-reação que poderá vir a permitir o estabelecimento de condições ótimas de processamento térmico para filmes finos de Al2O3 sobre silício a serem empregados na fabricação de MOSFETs.

Deposition and characterization of BiVO4 thin films and evaluation as photoanodes for methylene blue degradation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Powder Diffraction of Components Subject to Corrosion in Fuse Cutouts with CeramicInsulation

Aiming identification of the components most affected by corrosion under saline environment conditions, we have carried out X-ray diffraction measurements in ceramic and bond materials, all in the powder form. The ceramic is analyzed before and after thermal annealing at 1000 degrees C, showing the same DRX peaks, although better defined after annealing. Identification suggests the presence of Al(6)Si(2)O(13) (Mullite) and SiO(2) (Quartz). Analysis of the junction (bond) material shows similar peaks, but a metallic preponderance is observed. Thermal annealing of the junction is done at much lower temperature, because it melts in the range 135 degrees C-170 degrees C, when a whitish smoke begins to show up along with strong sulfur odor.

Propriedades estruturais e térmicas de vidros teluretos 20Li2O-80TeO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cerâmicas eletrônicas à base de SnO2 e TiO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Resistividade do filme depositado via sol-gel e estado de oxidação do dopante Ce na matriz SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Vibrational spectra and surface-enhanced resonance Raman scattering of palladium phthalocyanine evaporated films

The vibrational spectra of palladium phthalocyanine (PdPc) evaporated thin solid films are reported, including the resonance Raman scattering, surface-enhanced resonance Raman scattering (SERRS) and SERRS mapping of the film surface using micro-Raman spectroscopy with 633 nm laser radiation. SERRS of PdPc was obtained by evaporating an overlayer of Ag nanoparticles on to the PdPc film on glass. The SERRS enhancement factor is estimated as similar to10(4) with reference to PdPc evaporated films on glass. The molecular organization of the PdPc evaporated films was probed using transmission and reflection-absorption infrared spectra. It was established that a random molecular distribution found in PdPc evaporated films is independent of temperature. No evidence of thermal degradation due to thermal annealing was found in the films. Electronic absorption and emission spectra are also discussed. Copyright (C) 2002 John Wiley Sons, Ltd.

Erbium- and ytterbium-doped sol-gel SiO2-HfO2 crack-free thick films onto silica on silicon substrate

Aware of the difficulties in applying sol-gel technology on the preparation of thin films suitable for optical devices, the present paper reports on the preparation of crack-free erbium- and ytterbium-doped silica: hafnia thick films onto silica on silicon. The film was obtained using a dispersion of silica-hafnia nanoparticles into a binder solution, spin-coating, regular thermal process and rapid thermal process. The used methodology has allowed a significant increase of the film thickness. Based on the presented results good optical-quality films with the required thickness for a fiber matching single mode waveguide were obtained using the erbium- and ytterbium-activated sol-gel silica:hafnia system. The prepared film supports two transversal electric modes at 1550 nm and the difference between the transversal electric mode and the transversal magnetic mode is very small, indicating low birefringence. Photoluminescence of the I-4(13/2) -> I-4(15/2) transition of erbium ions shows a broad band centered at 1.53 mu m with full width at a half maximum of 28 nm. Up-conversion emission was carried out under different pump laser powers, and just one transition at red region was observed. (c) 2006 Elsevier B.V. All rights reserved.