989 resultados para SPOT-SIZE CONVERTER


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Background: An arteriovenous loop (AVL) enclosed in a polycarbonate chamber in vivo, produces a fibrin exudate which acts as a provisional matrix for the development of a tissue engineered microcirculatory network. Objectives: By administering enoxaparin sodium - an inhibitor of fibrin polymerization, the significance of fibrin scaffold formation on AVL construct size (including the AVL, fibrin scaffold, and new tissue growth into the fibrin), growth, and vascularization were assessed and compared to controls. Methods: In Sprague Dawley rats, an AVL was created on femoral vessels and inserted into a polycarbonate chamber in the groin in 3 control groups (Series I) and 3 experimental groups (Series II). Two hours before surgery and 6 hours post-surgery, saline (Series I) or enoxaparin sodium (0.6 mg/kg, Series II) was administered intra-peritoneally. Thereafter, the rats were injected daily with saline (Series I) or enoxaparin sodium (1.5 mg/kg, Series II) until construct retrieval at 3, 10, or 21 days. The retrieved constructs underwent weight and volume measurements, and morphologic/morphometric analysis of new tissue components. Results: Enoxaparin sodium treatment resulted in the development of smaller AVL constructs at 3, 10, and 21 days. Construct weight and volume were significantly reduced at 10 days (control weight 0.337 ± 0.016 g [Mean ± SEM] vs treated 0.228 ± 0.048, [P < .001]: control volume 0.317 ± 0.015 mL vs treated 0.184 ± 0.039 mL [P < .01]) and 21 days (control weight 0.306 ± 0.053 g vs treated 0.198 ± 0.043 g [P < .01]: control volume 0.285 ± 0.047 mL vs treated 0.148 ± 0.041 mL, [P < .01]). Angiogenesis was delayed in the enoxaparin sodium-treated constructs with the absolute vascular volume significantly decreased at 10 days (control vascular volume 0.029 ± 0.03 mL vs treated 0.012 ± 0.002 mL [P < .05]). Conclusion: In this in vivo tissue engineering model, endogenous, extra-vascularly deposited fibrin volume determines construct size and vascular growth in the first 3 weeks and is, therefore, critical to full construct development.

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A multiscale, multiphase thermokinetic model is used to show the effective control of the growth orientation of thin Si NWs for nanoelectronic devices enabled by nanoscale plasma chemistry. It is shown that very thin Si NWs with [110] growth direction can nucleate at much lower process temperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predominantly grown. These findings explain a host of experimental results and offer the possibility of energy- and matter-efficient, size- and orientation-controlled growth of [110] Si NWs for next-generation nanodevices.

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The possibility of fast, narrow-size/chirality nucleation of thin single-walled carbon nanotubes (SWCNTs) at low, device-tolerant process temperatures in a plasma-enhanced chemical vapor deposition (CVD) is demonstrated using multiphase, multiscale numerical experiments. These effects are due to the unique nanoscale reactive plasma chemistry (NRPC) on the surfaces and within Au catalyst nanoparticles. The computed three-dimensional process parameter maps link the nanotube incubation times and the relative differences between the incubation times of SWCNTs of different sizes/chiralities to the main plasma- and precursor gas-specific parameters and explain recent experimental observations. It is shown that the unique NRPC leads not only to much faster nucleation of thin nanotubes at much lower process temperatures, but also to better selectivity between the incubation times of SWCNTs with different sizes and chiralities, compared to thermal CVD. These results are used to propose a time-programmed kinetic approach based on fast-responding plasmas which control the size-selective, narrow-chirality nucleation and growth of thin SWCNTs. This approach is generic and can be used for other nanostructure and materials systems.

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It is shown that plasmas can minimize the adverse Gibbs-Thompson effect in thin quantum wire growth. The model of Si nanowirenucleation includes the unprecedented combination of the plasma sheath, ion- and radical-induced species creation and heating effects on the surface and within an Au catalyst nanoparticle. Compared to neutral gas thermal processes, much thinner, size-selective wires can nucleate at the same temperature and pressure while much lower energy and matter budget is needed to grow same-size wires. This explains the experimental observations and may lead to energy- and matter-efficient synthesis of a broader range of one-dimensional quantum structures.

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A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si3+ and Si1+ ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nm size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si1+ ions in a low substrate temperature range (227-327 °C). As low substrate temperatures (≤500 °C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.

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The results of large-scale (∼109 atoms) numerical simulations of the growth of different-diameter vertically-aligned single-walled carbon nanotubes in plasma systems with different sheath widths and in neutral gases with the same operating parameters are reported. It is shown that the nanotube lengths and growth rates can be effectively controlled by varying the process conditions. The SWCNT growth rates in the plasma can be up to two orders of magnitude higher than in the equivalent neutral gas systems. Under specific process conditions, thin SWCNTs can grow much faster than their thicker counterparts despite the higher energies required for catalyst activation and nanotube nucleation. This selective growth of thin SWCNTs opens new avenues for the solution of the currently intractable problem of simultaneous control of the nanotube chirality and length during the growth stage.

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A high level of control over quantum dot (QD) properties such as size and composition during fabrication is required to precisely tune the eventual electronic properties of the QD. Nanoscale synthesis efforts and theoretical studies of electronic properties are traditionally treated quite separately. In this paper, a combinatorial approach has been taken to relate the process synthesis parameters and the electron confinement properties of the QDs. First, hybrid numerical calculations with different influx parameters for Si1-x Cx QDs were carried out to simulate the changes in carbon content x and size. Second, the ionization energy theory was applied to understand the electronic properties of Si1-x Cx QDs. Third, stoichiometric (x=0.5) silicon carbide QDs were grown by means of inductively coupled plasma-assisted rf magnetron sputtering. Finally, the effect of QD size and elemental composition were then incorporated in the ionization energy theory to explain the evolution of the Si1-x Cx photoluminescence spectra. These results are important for the development of deterministic synthesis approaches of self-assembled nanoscale quantum confinement structures.

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The kinetics of saturation of Ni catalyst nanoparticle patterns of the three different degrees of order, used as a model for the growth of carbon nanotips on Si, is investigated numerically using a complex model that involves surface diffusion and ion motion equations. It is revealed that Ni catalyst patterns of different degrees of order, with Ni nanoparticle sizes up to 12.5 nm, exhibit different kinetics of saturation with carbon on the Si surface. It is shown that in the cases examined (surface coverage in the range of 1-50%, highly disordered Ni patterns) the relative pattern saturation factor calculated as the ratio of average incubation times for the processes conducted in the neutral and ionized gas environments reaches 14 and 3.4 for Ni nanoparticles of 2.5 and 12.5 nm, respectively. In the highly ordered Ni patterns, the relative pattern saturation factor reaches 3 for nanoparticles of 2.5 nm and 2.1 for nanoparticles of 12.5 nm. Thus, more simultaneous saturation of Ni catalyst nanoparticles of sizes in the range up to 12.5 nm, deposited on the Si substrate, can be achieved in the low-temperature plasma environment than with the neutral gas-based process.

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Many properties of single-walled carbon nanotube (SWCNT) arrays are determined by the size and surface coverage of the metal catalyst islands from which they are nucleated. Methods using thermal fragmentation of continuous metal films frequently fail to produce size-uniform islands. Hybrid numerical simulations are used to propose a new approach to controlled self-assembly of Ni islands of the required size and surface coverage using tailored gas-phase generated nanocluster fluxes and adjusted surface temperatures. It is shown that a maximum surface coverage of 0.359 by 0.96-1.02 nm Ni catalyst islands can be achieved at a low surface temperature of 500 K. Optimized growth of Ni catalyst islands can lead to fabrication of size-uniform SWCNT arrays, suitable for numerous nanoelectronic applications. This approach is deterministic and is applicable to a range of nanoassemblies where high surface coverage and island size uniformity are required.

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This paper presents a novel three-phase to single-phase matrix converter (TSMC) based bi-directional inductive power transfer (IPT) system for vehicle-to-grid (V2G) applications. In contrast to existing techniques, the proposed technique which employs a TSMC to drive an 8th order high frequency resonant network, requires only a single-stage power conversion process to facilitate bi-directional power transfer between electric vehicles (EVs) and a three-phase utility power supply. A mathematical model is presented to demonstrate that both magnitude and direction of power flow can be controlled by regulating either relative phase angles or magnitudes of voltages generated by converters. The viability of the proposed mathematical model is verified using simulated results of a 10 kW bi-directional IPT system and the results suggest that the proposed system is efficient, reliable and is suitable for high power applications which require contactless power transfer.

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Matrix converter (MC) based bi-directional inductive power transfer (BD-IPT) systems are gaining popularity as an efficient and reliable technique with single stage grid integration as opposed to two stage grid integration of conventional grid connected BD-IPT systems. However MCs are invariably rich in harmonics and thus affect both power quality and power factor on the grid side. This paper proposes a mathematical model through which the grid side harmonics of MC based BD-IPT systems can accurately be estimated. The validity of the proposed mathematical model is verified using simulated results of a 3 kW BD-IPT system and results suggest that the MC based BD-IPT systems have a better power factor with higher power quality over conventional grid connected rectifier based systems.

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A new small full bridge module for MMCC research is presented. Each full bridge converter cell is a single small (65 × 30 mm) multilayer PCB with two low voltage high current (22 V, 40 A) integrated half bridge ICs and the necessary isolated control signals and auxiliary power supply (2500 V isolation). All devices are surface mount, minimising cell height (4 mm) and parasitic inductance. Each converter cell can be physically stacked with PCB connectors propagating the control signals and inter-cell power connections. Many cells can be trivially stacked to create a large multilevel converter leg with isolated auxiliary power and control signals. Any of the MMCC family members is then easily formed. With a change in placement of stacking connector, a parallel connection of bridges is also possible. Operation of a nine level parallel full bridge is demonstrated at 12 V and 384 kHz switching frequency delivering a 30 W 2 kHz sinewave into a resistive load. A number of new applications for this novel module aside from MMCC development are listed.

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Our research aims to answer the research questions “How do we commonly describe the global start-ups profile as evidenced in prior inductive research?” and “Does this global start-ups profile can effectively explain phenomena in Australian global start-up firms?” We systematically review 29 global start-ups (144 firms) qualitative articles to understand descriptive definitions of global-startup firms. We then triangulate this finding with an Australian high-tech firm. Our contribution is to form a descriptive profile of global start-up phenomenon and raise interesting issues that have potentially fruitful findings for both research and practice. This profile might well be just a deviant from the traditional model that describes how firms establish their footprints, first in their domestic markets followed by moves into cross-border activities. Regardless, government agencies, consultants, and entrepreneurs need to understand the phenomenon. Thus we anticipate that this phenomenon will continue to provide interesting issues for pursuit, both by researchers as well as the practitioner community.

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Typical Inductive Power Transfer (IPT) systems employ two power conversion stages to generate a high frequency current from low frequency utility supply. This paper proposes a matrix converter based IPT system that facilitates the generation of high frequency current through a single power conversion stage. The proposed matrix converter topology transforms a 3-phase low frequency voltage system to a high frequency single phase voltage which in turn powers a series compensated IPT system. A comprehensive mathematical model is developed to investigate the behavior of the proposed IPT topology. Theoretical results are presented in comparison to simulations, which are performed in Matlab/ Simulink, to demonstrate the applicability of the proposed concept and the validity of the developed model.

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Dual-active bridges (DABs) can be used to deliver isolated and bidirectional power to electric vehicles (EVs) or to the grid in vehicle-to-grid (V2G) applications. However, such a system essentially requires a two-stage power conversion process, which significantly increases the power losses. Furthermore, the poor power factor associated with DAB converters further reduces the efficiency of such systems. This paper proposes a novel matrix converter based resonant DAB converter that requires only a single-stage power conversion process to facilitate isolated bi-directional power transfer between EVs and the grid. The proposed converter comprises a matrix converter based front end linked with an EV side full-bridge converter through a high frequency isolation transformer and a tuned LCL network. A mathematical model, which predicts the behavior of the proposed system, is presented to show that both the magnitude and direction of the power flow can be controlled through either relative phase angle or magnitude modulation of voltages produced by converters. Viability of the proposed concept is verified through simulations. The proposed matrix converter based DAB, with a single power conversion stage, is low in cost, and suites charging and discharging in single or multiple EVs or V2G applications.