Blue amplified spontaneous emission from 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer with high photoluminescence efficiency

The amplified spontaneous emission properties of a 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer were studied. The conjugated polymer shows a high photoluminescence quantum efficiency of 67% and emits a narrowed blue emissive spectrum with a full width at half-maximum of 3.6 nm when optically pumped, indicating better lasing action. A threshold energy as low as 0.22 mJ pulse(-1) cm(-2), a net gain of 40.54 cm(-1) and a loss of 7.8 cm(-1) were obtained, demonstrating that this conjugated polymer could be a promising candidate as the gain medium for the fabrication of blue polymer lasers.

Dissipative Chaos in Semiconductor Superlattices

We consider the motion of ballistic electrons in a miniband of a semiconductor superlattice (SSL) under the influence of an external, time-periodic electric field. We use the semi-classical balance-equation approach which incorporates elastic and inelastic scattering (as dissipation) and the self-consistent field generated by the electron motion. The coupling of electrons in the miniband to the self-consistent field produces a cooperative nonlinear oscillatory mode which, when interacting with the oscillatory external field and the intrinsic Bloch-type oscillatory mode, can lead to complicated dynamics, including dissipative chaos. For a range of values of the dissipation parameters we determine the regions in the amplitude-frequency plane of the external field in which chaos can occur. Our results suggest that for terahertz external fields of the amplitudes achieved by present-day free electron lasers, chaos may be observable in SSLs. We clarify the nature of this novel nonlinear dynamics in the superlattice-external field system by exploring analogies to the Dicke model of an ensemble of two-level atoms coupled with a resonant cavity field and to Josephson junctions.

High speed nonlinear optical components for next-generation optical communications

Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

Voltage properties of optically injected long wavelength VCSELs: Theory and experiment

Future high speed communications networks will transmit data predominantly over optical fibres. As consumer and enterprise computing will remain the domain of electronics, the electro-optical conversion will get pushed further downstream towards the end user. Consequently, efficient tools are needed for this conversion and due to many potential advantages, including low cost and high output powers, long wavelength Vertical Cavity Surface Emitting Lasers (VCSELs) are a viable option. Drawbacks, such as broader linewidths than competing options, can be mitigated through the use of additional techniques such as Optical Injection Locking (OIL) which can require significant expertise and expensive equipment. This thesis addresses these issues by removing some of the experimental barriers to achieving performance increases via remote OIL. Firstly, numerical simulations of the phase and the photon and carrier numbers of an OIL semiconductor laser allowed the classification of the stable locking phase limits into three distinct groups. The frequency detuning of constant phase values (ø) was considered, in particular ø = 0 where the modulation response parameters were shown to be independent of the linewidth enhancement factor, α. A new method to estimate α and the coupling rate in a single experiment was formulated. Secondly, a novel technique to remotely determine the locked state of a VCSEL based on voltage variations of 2mV−30mV during detuned injection has been developed which can identify oscillatory and locked states. 2D & 3D maps of voltage, optical and electrical spectra illustrate corresponding behaviours. Finally, the use of directly modulated VCSELs as light sources for passive optical networks was investigated by successful transmission of data at 10 Gbit/s over 40km of single mode fibre (SMF) using cost effective electronic dispersion compensation to mitigate errors due to wavelength chirp. A widely tuneable MEMS-VCSEL was established as a good candidate for an externally modulated colourless source after a record error free transmission at 10 Gbit/s over 50km of SMF across a 30nm single mode tuning range. The ability to remotely set the emission wavelength using the novel methods developed in this thesis was demonstrated.

Analysis and optimisation of semiconductor reflective modulators for optical networks

Reflective modulators based on the combination of an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are attractive devices for applications in long reach carrier distributed passive optical networks (PONs) due to the gain provided by the SOA and the high speed and low chirp modulation of the EAM. Integrated R-EAM-SOAs have experimentally shown two unexpected and unintuitive characteristics which are not observed in a single pass transmission SOA: the clamping of the output power of the device around a maximum value and low patterning distortion despite the SOA being in a regime of gain saturation. In this thesis a detailed analysis is carried out using both experimental measurements and modelling in order to understand these phenomena. For the first time it is shown that both the internal loss between SOA and R-EAM and the SOA gain play an integral role in the behaviour of gain saturated R-EAM-SOAs. Internal loss and SOA gain are also optimised for use in a carrier distributed PONs in order to access both the positive effect of output power clamping, and hence upstream dynamic range reduction, combined with low patterning operation of the SOA Reflective concepts are also gaining interest for metro transport networks and short reach, high bit rate, inter-datacentre links. Moving the optical carrier generation away from the transmitter also has potential advantages for these applications as it avoids the need for cooled photonics being placed directly on hot router line-cards. A detailed analysis is carried out in this thesis on a novel colourless reflective duobinary modulator, which would enable wavelength flexibility in a power-efficient reflective metro node.

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

The plasma mirror - A subpicosecond optical switch for ultrahigh power lasers

Plasma mirrors are devices capable of switching very high laser powers on subpicosecond time scales with a dynamic range of 20–30 dB. A detailed study of their performance in the near-field of the laser beam is presented, a setup relevant to improving the pulse contrast of modern ultrahigh power lasers ~TW–PW!. The conditions under which high reflectivity can be achieved and focusability of the reflected beam retained are identified. At higher intensities a region of high specular reflectivity with rapidly decreasing focusability was observed, suggesting that specular reflectivity alone is not an adequate guide to the ideal range of plasma mirror operation. It was found that to achieve high reflectivity with negligible phasefront distortion of the reflected beam the inequality csDt,lLaser must be met (cs : sound speed, Dt: time from plasma formation to the peak of the pulse!. The achievable contrast enhancement is given by the ratio of plasma mirror reflectivity to cold reflectivity.

Multiphysics Simulation of Nanostructured Semiconductor Devices

Thesis (Ph.D.)--University of Washington, 2013

Transient response of wavelength-switchable erbium -doped fiber lasers with linear coupled cavities

The transient characteristics of an erbium-doped fiber (F.DF) laser, which can switch between wavelengths. are investigated. 77te laser has a set of coupled linear cavities. The slow gain dynamics of EDFs and the cross-gain saturation in the coupled cavities give rise to delayed switching responses and relocation oscillations, which are respertively measured to be l ins and 3.5 ms for the worst rase, and which mar be decreased by increasing the pump power. Thus, the switching speed of the laser may be higher than 100 Hz

Development and parametric studies of pulsed nitrogen and d-switched nd:glass lasers and some of their applications

Laser engineering is an area in which developments in the existing design concepts and technology appear at an alarming rate. Now—a-days, emphasis has shifted from innovation to cost reduction and system improvement. To a major extent, these studies are aimed at attaining larger power densities, higher system efficiency and identification of new lasing media and new lasing wavelengths. Todate researchers have put to use all the ditferent Forms of matter as lasing material. Laser action was observed For the first time in a gaseous system - the He-Ne system. This was Followed by a variety of solidstate and gas laser systems. Uarious organic dyes dissolved in suitable solvents were found to lase when pumped optically. Broad band emission characteristics of these dye molecules made wavelength tuning possible using optical devices. Laser action was also observed in certain p-n junctions of semiconductor materials and some of these systems are also tunable. The recent addition to this list was the observation of laser action from certain laser produced plasmas. The purpose of this investigation was to examine the design and Fabrication techniques of pulsed Nitrogen lasers and high power Nd: Glass laserso Attempt was also made to put the systems developed into certain related experiments

Growth of metal and semiconductor nanostructures for nonlinear optical applications

Nonlinear optics has been a rapidly growing field in recent decades since the invention of lasers. The systematic progress in the laser technology increases our efficiency in the generation and control of coherent optical radiations. Nonlinear optics is based on the study ofeffects and phenomena related to the interaction of intense coherent light radiation with matter. Compared to other light sources laser radiation can provide high directionality, high monochromaticiry, high brightness and high photon degeneracy. At such a very intense incident beam, the matter responds in a nonlinear manner to the incident radiation fields, which endows the media :1 characteristic to change the refractive index or absorption coe fflcient of the media or the wavelength, or the frequency of the incident electromagnetic waves. This thesis encompasses the fabrication of nonlinear optical devices based on semiconductor and metal nanostructures. The presented work focus on the experimental and theoretical discussions on nonlinear optical effects especially nonlinear absorption and refraction exhibitted by metal and semiconductor nanostructures

Simulation and Design of a high speed Solid State Switch for Excimer Laser

Excimerlaser sind gepulste Gaslaser, die Laseremission in Form von Linienstrahlung – abhängig von der Gasmischung – im UV erzeugen. Der erste entladungsgepumpte Excimerlaser wurde 1977 von Ischenko demonstriert. Alle kommerziell verfügbaren Excimerlaser sind entladungsgepumpte Systeme. Um eine Inversion der Besetzungsdichte zu erhalten, die notwendig ist, um den Laser zum Anschwingen zu bekommen, muss aufgrund der kurzen Wellenlänge sehr stark gepumpt werden. Diese Pumpleistung muss von einem Impulsleistungsmodul erzeugt werden. Als Schaltelement gebräuchlich sind Thyratrons, Niederdruckschaltröhren, deren Lebensdauer jedoch sehr limitiert ist. Deshalb haben sich seit Mitte der 1990iger Jahre Halbleiterschalter mit Pulskompressionsstufen auch in dieser Anwendung mehr und mehr durchgesetzt. In dieser Arbeit wird versucht, die Pulskompression durch einen direkt schaltenden Halbleiterstapel zu ersetzen und dadurch die Verluste zu reduzieren sowie den Aufwand für diese Pulskompression einzusparen. Zudem kann auch die maximal mögliche Repetitionsrate erhöht werden. Um die Belastung der Bauelemente zu berechnen, wurden für alle Komponenten möglichst einfache, aber leistungsfähige Modelle entwickelt. Da die normalerweise verfügbaren Daten der Bauelemente sich aber auf andere Applikationen beziehen, mussten für alle Bauteile grundlegende Messungen im Zeitbereich der späteren Applikation gemacht werden. Für die nichtlinearen Induktivitäten wurde ein einfaches Testverfahren entwickelt um die Verluste bei sehr hohen Magnetisierungsgeschwindigkeiten zu bestimmen. Diese Messungen sind die Grundlagen für das Modell, das im Wesentlichen eine stromabhängige Induktivität beschreibt. Dieses Modell wurde für den „magnetic assist“ benützt, der die Einschaltverluste in den Halbleitern reduziert. Die Impulskondensatoren wurden ebenfalls mit einem in der Arbeit entwickelten Verfahren nahe den späteren Einsatzparametern vermessen. Dabei zeigte sich, dass die sehr gebräuchlichen Class II Keramikkondensatoren für diese Anwendung nicht geeignet sind. In der Arbeit wurden deshalb Class I Hochspannungs- Vielschicht- Kondensatoren als Speicherbank verwendet, die ein deutlich besseres Verhalten zeigen. Die eingesetzten Halbleiterelemente wurden ebenfalls in einem Testverfahren nahe den späteren Einsatzparametern vermessen. Dabei zeigte sich, dass nur moderne Leistungs-MOSFET´s für diesen Einsatz geeignet sind. Bei den Dioden ergab sich, dass nur Siliziumkarbid (SiC) Schottky Dioden für die Applikation einsetzbar sind. Für die Anwendung sind prinzipiell verschiedene Topologien möglich. Bei näherer Betrachtung zeigt sich jedoch, dass nur die C-C Transfer Anordnung die gewünschten Ergebnisse liefern kann. Diese Topologie wurde realisiert. Sie besteht im Wesentlichen aus einer Speicherbank, die vom Netzteil aufgeladen wird. Aus dieser wird dann die Energie in den Laserkopf über den Schalter transferiert. Aufgrund der hohen Spannungen und Ströme müssen 24 Schaltelemente in Serie und je 4 parallel geschaltet werden. Die Ansteuerung der Schalter wird über hochisolierende „Gate“-Transformatoren erreicht. Es zeigte sich, dass eine sorgfältig ausgelegte dynamische und statische Spannungsteilung für einen sicheren Betrieb notwendig ist. In der Arbeit konnte ein Betrieb mit realer Laserkammer als Last bis 6 kHz realisiert werden, der nur durch die maximal mögliche Repetitionsrate der Laserkammer begrenzt war.

Evaluation of the shear bond strength of a composite resin in sound, demineralized and hypermineralized bovine dentin after irradiation with Er:YAG and Nd:YAG lasers, employing a self-etching adhesive system

Background and Objectives. The adhesion of dental materials is important for the success of treatment. The aim of this study is to evaluate the bond strength of a composite resin applied with a self-etching adhesive system in different dentins after irradiation with Er:YAG and Nd:YAG lasers, observing their morphologic pattern using Scanning Electronic Microscopy (SEM). Materials and Methods. The buccal surface of 72 bovine incisors was worn until exposure of medium depth dentin. The specimens were divided into three groups; GI: normal, GII: demineralized and GIII: hypermineralized dentin. These were also divided into two subgroups; A-irradiated for 30 s with Er:YAG laser in noncontact mode at 40 mJ and 6 Hz and B- irradiated for 30 s with Nd:YAG laser in contact mode at 60 mJ and 10 Hz. The adhesive system Clearfil SE. Bond (Kuraray) and composite resin Tetric Ceram (Vivadent) were applied on the irradiated area by the incremental technique. After storage for 24 h in distilled water at 37 degrees C, the specimens were submitted to the shear strength test in a universal testing machine (EMIC) at a crosshead speed of 1.0 mm/min. Other specimens were made to be analyzed by SEM. Results. The results were statistically analyzed by Analysis of Variance and the Tukey test. Regardless of the type of dentin, the bond strength of specimens irradiated with the Nd:YAG laser (8,94 +/- 2,07) was higher compared to specimens irradiated with the Er:YAG laser (7,03 +/- 2,47); the highest bond strength was obtained for the group of hypermineralized dentin irradiated with the Nd:YAG laser. The SEM analysis showed that the Er:YAG laser caused opening of tubules and the Nd:YAG laser produced areas of fusion as well as regions of opening of dentinal tubules. Conclusions. The dentin showed different morphological patterns and the laser promote alterations on their surfaces, influencing the bond strength of the composite resin. (C) 2010 Laser Institute of America.

Pulpal temperature increases with Er : YAG laser and high-speed handpieces

Statement of problem. During tooth preparation, both high-speed handpieces and lasers generate heat, which, if not controlled, can cause pulpal necrosis.Purpose. The aim of this study was to compare temperature increases produced by a high-speed dental handpiece with those produced by a relatively new instrument, the Er:YAG (erbium: yttrium-aluminum-garnet) laser.Material and methods. Thirty bovine mandibular incisors were reduced to an enamel/dentin thickness of 2.5 mm. Class V preparations were completed to a depth of 2.0 mm, measured with a caliper or by a mark oil the burs. A thermocouple was placed inside the pulp chamber to determine temperature increases (degreesC). Analysis was performed on the following groups (n = 10): Group 1, high-speed handpiece without water cooling, Group 11, high-speed handpiece with water cooling (30 mL/min), and Group III, the noncontact Er:YAG laser (2.94 mum at 350 mJ/10 Hz) with water cooling (4.5 mL/min). The temperature increases were recorded by a computer linked to the thermocouples. The data were analyzed using the Kruskal-Wallis test. The Dunn multiple comparison test was used as post hoc test (alpha = .05).Results. The average temperature rises were: 11.64degreesC (+/-4.35) for Group 1, 0.96degreesC (+/-0.71) for Group 11, and 2.69degreesC (+/-1.12) for Group III. There were no statistical differences between Groups 11 and III, both 11 and III differed from Group I significantly (P = .000 and P = .002, respectively).Conclusion. The preparations made with the high-speed and the laser instrument generated similar heat increases under water cooling. Water cooling was essential to avoid destructive temperature increases when using both the high-speed handpiece and laser.

Application of Er:YAG and Er, Cr:YSGG lasers in cavity preparation for dental tissues: a literature review

The laser has been widely used in many specialties of dentistry and several wavelengths have been investigated as a substitute for high-speed handpiece. The purpose of this paper is to review the literature about the use of Er:YAG and Er,Cr:YSGG lasers in cavity preparation for dental tissues. Despite the differences in wavelength, pulse duration and energy, the morphological characteristics of the irradiated dentin surface with these lasers are comparable, as well as its effects as methods of dental caries prevention. Thus, Er:YAG and Er,Cr:YSGG lasers prepared cavities with similar effects on the dental tissue, however, further investigations about ideal irradiation conditions are needed for both lasers.