991 resultados para Rectifying-k Channels


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Continuous progress in optical communication technology and corresponding increasing data rates in core fiber communication systems are stimulated by the evergrowing capacity demand due to constantly emerging new bandwidth-hungry services like cloud computing, ultra-high-definition video streams, etc. This demand is pushing the required capacity of optical communication lines close to the theoretical limit of a standard single-mode fiber, which is imposed by Kerr nonlinearity [14]. In recent years, there have been extensive efforts in mitigating the detrimental impact of fiber nonlinearity on signal transmission, through various compensation techniques. However, there are still many challenges in applying these methods, because a majority of technologies utilized in the inherently nonlinear fiber communication systems had been originally developed for linear communication channels. Thereby, the application of linear techniques in a fiber communication systems is inevitably limited by the nonlinear properties of the fiber medium. The quest for the optimal design of a nonlinear transmission channels, development of nonlinear communication technqiues and the usage of nonlinearity in aconstructive way have occupied researchers for quite a long time.

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In this paper, we experimentally demonstrate the benefit of polarization insensitive dual-band optical phase conjugation for up to ten 400 Gb/s optical super-channels using a Raman amplified transmission link with a realistic span length of 75 km. We demonstrate that the resultant increase in transmission distance may be predicted analytically if the detrimental impacts of power asymmetry and polarization mode dispersion are taken into account.

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The nonlinear Fourier transform, also known as eigenvalue communications, is a coding, transmission and signal processing technique that makes positive use of the nonlinear Kerr effect in fibre channels. I will discuss recent progress in this field. 2015 OSA.

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Introduction: In this study, quasi-three-dimensional (3D) microwell patterns were fabricated with poly (l-lactic acid) for the development of cell-based assays, targeting voltage-gated calcium channels (VGCCs). Methods and materials: SH-SY5Y human neuroblastoma cells were interfaced with the microwell patterns and found to grow as two dimensional (2D), 3D, and near two dimensional (N2D), categorized on the basis of the cells location in the pattern. The capability of the microwell patterns to support 3D cell growth was evaluated in terms of the percentage of the cells in each growth category. Cell spreading was analyzed in terms of projection areas under light microscopy. SH-SY5Y cells VGCC responsiveness was evaluated with confocal microscopy and a calcium fluorescent indicator, Calcium GreenTM-1. The expression of L-type calcium channels was evaluated using immunofluorescence staining with DM-BODIPY. Results: It was found that cells within the microwells, either N2D or 3D, showed more rounded shapes and less projection areas than 2D cells on flat poly (l-lactic acid) substrates. Also, cells in microwells showed a significantly lower VGCC responsiveness than cells on flat substrates, in terms of both response magnitudes and percentages of responsive cells, upon depolarization with 50 mM K+. This lower VGCC responsiveness could not be explained by the difference in L-type calcium channel expression. For the two patterns addressed in this study, N2D cells consistently exhibited an intermediate value of either projection areas or VGCC responsiveness between those for 2D and 3D cells, suggesting a correlative relation between cell morphology and VGCC responsiveness. Conclusion: These results suggest that the pattern structure and therefore the cell growth characteristics were critical factors in determining cell VGCC responsiveness and thus provide an approach for engineering cell functionality in cell-based assay systems and tissue engineering scaffolds.

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In this paper, we experimentally demonstrate the benefit of polarization insensitive dual-band optical phase conjugation for up to ten 400 Gb/s optical super-channels using a Raman amplified transmission link with a realistic span length of 75 km. We demonstrate that the resultant increase in transmission distance may be predicted analytically if the detrimental impacts of power asymmetry and polarization mode dispersion are taken into account.

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<p>The importance of ion channels in the hallmarks of many cancers is increasingly recognised. This article reviews current knowledge of the expression of members of the voltage-gated calcium channel family (CaV) in cancer at the gene and protein level and discusses their potential functional roles. The ten members of the CaV channel family are classified according to expression of their pore-forming -subunit; moreover, co-expression of accessory 2, and confers a spectrum of biophysical characteristics including voltage dependence of activation and inactivation, current amplitude and activation/inactivation kinetics. CaV channels have traditionally been studied in excitable cells including neurones, smooth muscle, skeletal muscle and cardiac cells, and drugs targeting the channels are used in the treatment of hypertension and epilepsy. There is emerging evidence that several CaV channels are differentially expressed in cancer cells compared to their normal counterparts. Interestingly, a number of CaV channels also have non-canonical functions and are involved in transcriptional regulation of the expression of other proteins including potassium channels. Pharmacological studies show that CaV canonical function contributes to the fundamental biology of proliferation, cell-cycle progression and apoptosis. This raises the intriguing possibility that calcium channel blockers, approved for the treatment of other conditions, could be repurposed to treat particular cancers. Further research will reveal the full extent of both the canonical and non-canonical functions of CaV channels in cancer and whether calcium channel blockers are beneficial in cancer treatment.</p>

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We investigate the achievable sum rate and energy efficiency of zero-forcing precoded downlink massive multiple-input multiple-output systems in Ricean fading channels. A simple and accurate approximation of the average sum rate is presented, which is valid for a system with arbitrary rank channel means. Based on this expression, the optimal power allocation strategy maximizing the average sum rate is derived. Moreover, considering a general power consumption model, the energy efficiency of the system with rank-1 channel means is characterized. Specifically, the impact of key system parameters, such as the number of users N, the number of BS antennas M, Ricean factor K and the signal-to-noise ratio (SNR) are studied, and closed-form expressions for the optimal and M maximizing the energy efficiency are derived. Our findings show that the optimal power allocation scheme follows the water filling principle, and it can substantially enhance the average sum rate in the presence of strong line-of-sight effect in the low SNR regime. In addition, we demonstrate that the Ricean factor K has significant impact on the optimal values of M, N and .

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We investigate the achievable ergodic sum-rate of multi-user multiple-input multiple-output systems in Ricean fading channels. We first derive a lower bound on the average signal-to-leakage-and-noise ratio by utilizing the Mullen's inequality, which is then used to analyze the effect of channel mean information on the achievable sum-rate. With these results, a novel statistical-eigenmode space-division multipleaccess downlink transmission scheme is proposed. For this scheme, we derive an exact closed-form expression for the achievable ergodic sum-rate. Our results show that the achievable ergodic sum-rate converges to a saturation value in the high signal-to-noise ratio (SNR) region and reaches to a lower limit value in the lower Ricean K-factor range. In addition, we present tractable upper and lower bounds, which are shown to be tight for any SNR and Ricean K-factor value. Finally, the theoretical analysis is validated via numerical simulations.

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This paper studies the energy efficiency (EE) of a point-to-point rank-1 Ricean fading multiple-input-multiple-output (MIMO) channel. In particular, a tight lower bound and an asymptotic approximation for the EE of the considered MIMO system are presented, under the assumption that the channel is unknown at the transmitter and perfectly known at the receiver. Moreover, the effects of different system parameters, namely, transmit power, spectral efficiency (SE), and number of transmit and receive antennas, on the EE are analytically investigated. An important observation is that, in the high signal-to-noise ratio regime and with the other system parameters fixed, the optimal transmit power that maximizes the EE increases as the Ricean-K factor increases. On the contrary, the optimal SE and the optimal number of transmit antennas decrease as K increases.

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Massive multi-user multiple-input multiple-output (MU-MIMO) systems are cellular networks where the base stations (BSs) are equipped with hundreds of antennas, N, and communicate with tens of mobile stations (MSs), K, such that, N K 1. Contrary to most prior works, in this paper, we consider the uplink of a single-cell massive MIMO system operating in sparse channels with limited scattering. This case is of particular importance in most propagation scenarios, where the prevalent Rayleigh fading assumption becomes idealistic. We derive analytical approximations for the achievable rates of maximum-ratio combining (MRC) and zero-forcing (ZF) receivers. Furthermore, we study the asymptotic behavior of the achievable rates for both MRC and ZF receivers, when N and K go to infinity under the condition that N/K c 1. Our results indicate that the achievable rate of MRC receivers reaches an asymptotic saturation limit, whereas the achievable rate of ZF receivers grows logarithmically with the number of MSs.

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<p>Purpose: Activation of the transient receptor potential channels, TRPC6, TRPM4, and TRPP1 (PKD2), has been shown to contribute to the myogenic constriction of cerebral arteries. In the present study we sought to determine the potential role of various mechanosensitive TRP channels to myogenic signaling in arterioles of the rat retina.</p><p>Methods: Rat retinal arterioles were isolated for RT-PCR, Fura-2 Ca2+ microfluorimetry, patch-clamp electrophysiology, and pressure myography studies. In some experiments, confocal immunolabeling of wholemount preparations was used to examine the localization of specific mechanosensitive TRP channels in retinal vascular smooth muscle cells (VSMCs).</p><p>Results: Reverse transcription-polymerase chain reaction analysis demonstrated mRNA expression for TRPC1, M7, V1, V2, V4, and P1, but not TRPC6 or M4, in isolated retinal arterioles. Immunolabeling revealed plasma membrane, cytosolic and nuclear expression of TRPC1, M7, V1, V2, V4, and P1 in retinal VSMCs. Hypoosmotic stretch-induced Ca2+ influx in retinal VSMCs was reversed by the TRPV2 inhibitor tranilast and the nonselective TRPP1/V2 antagonist amiloride. Inhibitors of TRPC1, M7, V1, and V4 had no effect. Hypoosmotic stretch-activated cation currents were similar in Na+ and Cs+ containing solutions suggesting no contribution by TRPP1 channels. Direct plasma membrane stretch triggered cation current activity that was blocked by tranilast and specific TRPV2 pore-blocking antibodies and mimicked by the TRPV2 activator, 9-tetrahydrocannabinol. Preincubation of retinal arterioles with TRPV2 blocking antibodies prevented the development of myogenic tone.</p><p>Conclusions: Our results suggest that retinal VSMCs express a range of mechanosensitive TRP channels, but only TRPV2 appears to contribute to myogenic signaling in this vascular bed.</p>

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Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In<sub>x0.53</sub>Ga<sub>1-x</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As and In<sub>x0.1</sub>Ga<sub>1-x</sub>Sb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm<sup>2</sup>/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In<sub>0.85</sub>Ga<sub>0.15</sub>As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L<sub>side</sub>) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH<sub>4</sub>)<sub>2</sub>S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al<sub>2</sub>O<sub>3</sub>/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 1010<sup>12</sup>cm<sup>-2</sup>eV<sup>-1</sup> in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I<sub>d,sat</sub>=1.14mA/mm), double peaked transconductance (g<sub>m</sub>=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R<sub>on</sub>=845k.m). Despite demonstrating substantial improvement in the on-state metrics of I<sub>d,sat</sub> (11), g<sub>m</sub> (5.5) and R<sub>on</sub> (5.6), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L<sub>side</sub>) from 1m down to 70nm improved I<sub>d,sat</sub> (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In<sub>0.3</sub>Ga<sub>0.7</sub>Sb-channel (I<sub>d,sat</sub>=49.4mA/mm, g<sub>m</sub>=12.3mS/mm, R<sub>on</sub>=31.7k.m) and In<sub>0.4</sub>Ga<sub>0.6</sub>Sb-channel (I<sub>d,sat</sub>=38mA/mm, g<sub>m</sub>=11.9mS/mm, R<sub>on</sub>=73.5k.m) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.