A Complex BPF with On Chip Auto-tuning Architecture for Low-IF Receivers

A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18 mu m standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 19dBm, with 50 Omega as the source impedance. The input referred noise is about 80 mu V-rms. The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28x0.22mm(2), less than 1/8 of that of the main-filter which is 0.92x0.59mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply.

面向高性能数值计算的并行计算模型DRAM(h)

提出了一个基于存储层次的新并行计算模型DRAM（h），并在该模型下对两个经典并行数值计算算法的不同实现形式：四种形式并行了三角方程求解（PTRS）和六种形式无列选主元并行LU分解（PLU），进行了分析。模型分析表明，具有近乎相同时间和空间复杂性的同一算法不同实现形式在该模型下会有完全不同的存储复杂度。作者在日立公司SR2201 MPP并行机、曙光3000超级服务器和中国科学院科学与工程计算国家重点实验室（LSEC）的128节点Linux Cluster等三种并行计算平台上对模型分析结果进行了实验验证。结果表明，该模型分析在绝大数情况下都能较好地与不同实验枰台上的实验结果吻合。个别出现偏差的分析结果，在根据计算平台的存储层次特点修改模型分析的假定后，也能够进行解释。这说明了该模型以不同形式的算法实现进行存储访问模式区分的有效性。对在计算模型中加入指令/线程级并行的可行性和方法的研究是下一步的工作。

基于在线模型评估的动态Web系统性能保障

动态多层Web系统在运行时会受到许多不确定性因素的影响.同时,在不同的负载模式下具有不同的性能特性,需要不同的性能模型进行描述.为消除不确定性因素对系统性能的影响,基于反馈控制原理设计的性能保障机制主要采用单一、固定的系统性能模型,对动态Web系统变化的性能特征考虑不够.在负载呈波动且具有不可预测特性的Internet环境中,这会降低性能目标的精确性和稳定性.采用自适应控制的思想,以满足请求平均响应时间为目标,提出了一种基于在线评估系统性能模型的保障机制,并采用两个不同类型的事务性Web测试基准,对所提方法进行了评价.结果表明,该方法能够有效减轻变化负载模式下响应时间与预期目标的偏离程度.

软件缺陷预测技术

软件缺陷预测技术从20世纪70年代发展至今,一直是软件工程领域最活跃的内容之一,在分析软件质量、平衡软件成本方面起着重要的作用.研究和讨论了软件缺陷预测技术的起源、发展和当前所面临的挑战,对主流的缺陷预测技术进行了分类讨论和比较,并对典型的软件缺陷的分布模型给出了案例研究.

SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON

Infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and aluminum-doped-Si and implanted P, As, and Sb donors in silicon. A first evidence of complex formation in bulk p-type Si is obtained and the spectra confirm the anomalous 3.3-cm-1 deuterium frequency shift with respect to boron isotopes. The ratio of the D-B-11 and D-B-10 peak areas is found to be the same as that of the two boron isotopes natural abundance. In donor-implanted silicon, a quantitative analysis of the obtained data has allowed a rough estimate of the passivating rate due to diffusing deuterium. While the frequencies of the various vibrational lines are found to be in agreement with those reported in the literature, the data on the broad line at 1660 cm-1 (H) or 1220 cm-1 (D) seem to suggest an assignment of this peak to a complex in the bulk involving some type of defect due to the implantation process.

Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in mainland China. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.