Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

Mn ions were doped into InAs/GaAs quantum dots samples by high energy. implantation and subsequent annealing. The optical and electric properties of the samples have been studied. The photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. By studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. The latter change in the photoluminescence peaks is probably attributed to that Mn ions entering the InAs quantum dots, which release the strain of the quantum dots. For the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 K.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Enhanced biological effect induced by a radioactive C-9-ion beam at the depths around its Bragg peak

To explore the potential of double irradiation source, radioactive C-9-ion beam, in tumor therapy, a comparative study oil the surviving effect of human salivary gland cells at different penetration depths between C-9 and C-12-ion beams has been carried out. The 9C-ion C beam, especially at the distal side of the beam came out more efficient in cell killing at the depths around its Bragg peak than the 12 Bragg peak. Compared to the C-12 beam, an increase in RBE by a factor of up to 2.13 has been observed at the depths distal to the Bragg peak of the 9C beam. The 9C beam showed an enhanced biological effect at the penetration depths around its Bragg peak, corresponding to the stopping region of the incident C-9-ions and where the delayed low-energy particles were emitted. Further analysis revealed that cell lethality by the emitted particles from the stopping C-9-ions is responsible for the excessive biological effect at the penetration depths around the Bragg peak of the C-9 beam.

Double neutron/proton ratio of nucleon emissions in isotopic reaction systems as a robust probe of nuclear symmetry energy

The double neutron/proton ratio of nucleon emissions taken from two reaction systems using four isotopes of the same element, namely, the neutron/proton ratio in the neutron-rich system over that in the more symmetric system, has the advantage of reducing systematically the influence of the Coulomb force and the normally poor efficiencies of detecting low energy neutrons. The double ratio thus suffers less systematic errors. Within the IBUU04 transport model the double neutron/proton ratio is shown to have about the same sensitivity to the density dependence of nuclear symmetry energy as the single neutron/proton ratio in the neutron-rich system involved. The double neutron/proton ratio is therefore more useful for further constraining the symmetry energy of neutron-rich matter.

Fragmentations of some bifunctional phenylether compounds by intermediate ion/neutral complexes

The fragmentations of three bifunctional phenylether compounds including 2-(2, 6-dichloro)phenoxyl propionitrile, N-hydroxyl-4-butoxyl phenylacetyl amine(bufexamc) and 2-(1-methylethoxyl) phenol methylcarbamate (Propoxur) under electron impact ionization were reported, Metastable ion(MI) and collision-induced dissociation(CID) at a low energy have been used to study the fragmentation pathways from molecular ions. Apart from the simple bond cleavages, and the unimolecular dissociations via ion/neutral complex intermediate as a competitive mechanism were demonstrated, Moreover, the intramolecular hydrogen transfer and double hydrogen transfers in the fragmentations of these compounds were discussed in detail.

Positronium scattering by Ne, Ar, Kr and Xe in the frozen target approximation

A full-electron coupled-state treatment of positronium (Ps)- inert gas scattering is developed within the context of the frozen target approximation. Calculations are performed for Ps(Is) scattering by Ne and Ar in the impact energy range 0-40 eV using coupled pseudostate expansions consisting of nine and 22 Ps states. The purpose of the pseudostates is primarily to represent ionization of the Ps which is found to be a major process at the higher energies. First Born estimates of target excitation are used to complement the frozen target results. The available experimental data are discussed in detail. It is pointed out that the very low energy measurements (less than or equal to2 eV) correspond to the momentum transfer cross section sigma(mom) and not to the elastic cross section sigma(el). Calculation shows that sigma(mom), and sigma(el) diverge very rapidly with increasing energy and consequently comparisons of the low-energy data with ITel can be very misleading. Agreement between the calculations and the low-energy measurements of anion as well;as higher energy (greater than or equal to15 eV) beam measurements of the total cross section, is less than satisfactory. Results for Ps(1s) scattering by Kr and Xe in the static-exchange approximation are also presented.

Importance of the H- channel in Ps-H scattering

It is shown that virtual H- formation has a profound effect upon low-energy Ps(1s)-H(1s) scattering, yet H- formation only accounts for about 10% of the total cross section just above threshold. Infinite series of Rydberg resonances converging on to the H- formation threshold are seen.

Virtual state scattering with cold electrons: para-xylene and para-difluorobenzene

The scattering of electrons with kinetic energies down to a few meV by para-xylene and para-difluorobenzene has been observed experimentally with an electron beam energy resolution of 0.95 to 1.5 meV (full width half maximum). At low electron energies the collisions can be considered as cold scattering events because the de Broglie wavelength of the electron is considerably larger than the target dimensions. The scattering cross sections measured rise rapidly at low energy due to virtual state scattering. The nature of this scattering process is discussed using s- and p-wave phase shifts derived from the experimental data. Scattering lengths are derived of, respectively, -9.5+/-0.5 and -8.0+/-0.5 a.u. for para-xylene and para-difluorobenzene. The virtual state effect is interpreted in terms of nuclear diabatic and partially adiabatic models, involving the electronic and vibronic symmetries of the unoccupied orbitals in the target species. The concept of direct and indirect virtual state scattering is introduced, through which the present species, in common with carbon dioxide and benzene, scatter through an indirect virtual state process, whereas other species, such as perfluorobenzene, scatter through a direct process. (C) 2005 American Institute of Physics.

Giant resonances in cold electron scattering by CS2

Experimental data are presented for the scattering of cold electrons by CS2, for both integral and backward scattering, between a few meV and a few hundred meV impact energy. Giant resonances with cross sections in excess of 50 Angstrom(2) are observed below 100 meV, associated with the transient formation of CS2- at 15 meV and with the bend and symmetric stretch of CS2 at thresholds of 49 and 82 meV, respectively. The resonance at 49 meV is 2 orders of magnitude greater in cross section than a dipole impulsive model predicts. These structures are superimposed on a sharp rise in the scattering cross section at low energy, which may be attributed to virtual state scattering.

The 90-degree problem of scattering theory revisited: dynamical turbulence effects versus nonlinear effects

The 90° problem of cosmic-ray transport theory is revisited in this paper. By using standard forms of the wave spectrum in the solar wind, the pitch-angle Fokker–Planck coefficient and the parallel mean free path are computed for different resonance functions. A critical comparison is made of the strength of 90° scattering due to plasmawave effects, dynamical turbulence effects and nonlinear effects. It is demonstrated that, only for low-energy cosmic particles, dynamical effects are usually dominant. The novel results presented here are essential for an effective comparison of heliospheric observations for the parallel mean free path with the theoretical model results.

Mixing of dielectronic and multiply-excited states in electron-ion recombination: a study of Au24+

It has been suggested (Gribakin et al 1999 Aust. J. Phys. 52 443–57, Flambaum et al 2002 Phys. Rev. A 66 012713) that strongly enhanced low-energy electron recombination observed in Au25+ (Hoffknecht et al 1998 J. Phys. B: At. Mol. Opt. Phys. 31 2415–28) is mediated by complex multiply excited states, while simple dielectronic excitations play the role of doorway states for the electron capture process. We present the results of an extensive study of con?guration mixing between doubly excited (doorway) states and multiply excited states which account for the large electron recombination rate on Au25+ . A detailed analysis of spectral statistics and statistics of eigenstate components shows that the dielectronic doorway states are virtually ‘dissolved’ in complicated chaotic multiply excited eigenstates. This work provides a justi?cation for the use of statistical theory to calculate the recombination rates of Au25+ and similar complex multiply charged ions. We also investigate approaches which allow one to study complex chaotic many-body eigenstates and criteria of strong con?guration mixing, without diagonalizing large Hamiltonian matrices.

STUDIES OF ION-SURFACE INTERACTIONS USING MULTIPHOTON IONIZATION

A experimental setup has been built for the study of low energy reactive ion interactions with surfaces. Particular emphasis is placed on the detection of the neutral material leaving the surface using nonresonant multiphoton.ionization. Some preliminary measurements show the suitability of the system for the proposed study.

B-spline methods in R-matrix theory for scattering in two-electron systems

The use of B-spline basis sets in R-matrix theory for scattering processes has been investigated. In the present approach a B-spline basis is used for the description of the inner region, which is matched to the physical outgoing wavefunctions by the R-matrix. Using B-splines, continuum basis functions can be determined easily, while pseudostates can be included naturally. The accuracy for low-energy scattering processes is demonstrated by calculating inelastic scattering cross sections for e colliding on H. Very good agreement with other calculations has been obtained. Further extensions of the codes to quasi two-electron systems and general atoms are discussed as well as the application to (multi) photoionization.