396 resultados para ER3
Resumo:
We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er + O co-implanted GaN, and discuss the influence of O ions on Er3+ -related infrared photoluminescence (PL). It is found that Er3+ implantation introduces new Raman peaks in Raman spectra at frequencies 300 and 670 cm and one additional new peak at 360cm is introduced after Er + O implantation. It is proposed that the broad structure around 300 cm(-1) mode originates from disorder-activated scattering (DARS). The Raman peak at 670 cm is assigned to nitrogen vacancy related defects. The 360 cm peak is attributed to the O implantation induced defect complexes (vacancies, interstitial, or anti-sites in the host). The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL of GaN: Er + O.
Resumo:
Er-doped Si nanoclusters embedded in SiO2 (NCSO) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. A 1.16 mu m (1.08 eV) photoluminescence (PL) peak was observed from an Er-doped NCSO film deposited on a Si substrate. This 1.16 mu m peak is attributed to misfit dislocations at the NCSO/Si interface. The emission properties of the 1.16 mu m peak and its correlation with the Er3+ emission (1.54 mu m) have been studied in detail. The observed behavior suggests that the excitation mechanism of the 1.16 mu m PL is in a fashion similar to that shown for Er-doped Si nanoclusters embedded in a SiO2 matrix. (C) 2006 American Institute of Physics.
Resumo:
Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
Correlations between Si nanocrystal (nc-Si) related photoluminescence (PL), Er3+ emission and nonradiative defects in the Er-doped SiO2 films containing nc-Si (SRSO) are studied. Upon 514.5 nm laser excitation the erbium-doped SRSO samples exhibit PL peaks at around 0.8 and 1.54 mum, which can be assigned to the electron-hole recombination in nc-Si and the intra-4f transition in Er3+, respectively. With increasing Er3+ content in the films, Er3+ emission becomes intense while the PL at 0.8 mum decreases, suggesting a strong coupling of nc-Si and Er 31 ions. Hydrogen plasma treatment for the samples improve the PL intensities of the 0.8 and 1.54 mum bands, indicating H passivation for the nonradiative defects existing in the samples. Further-more, from the effect of hydrogen treatment for the samples, we observe variation of the number of nonradiative defects with annealing temperatures. (C) 2003 Elsevier Science B.V. All rights reserved.
Resumo:
Eu ions doped SiO2 thin films, SiO2( Eu), were prepared by co-sputtering of SiO2 and Eu2O3 and Eu ion implantation into thermally grown SiO2 films. The Eu-L-3-edge X-ray absorption near edge structure (XANES) spectra of SiO2(Eu) films show a doublet absorption peak structure with energy difference of 7 eV, which indicates the conversion of Eu3+ to Eu2+ at high annealing temperature in N-2. The strong blue luminescence of SiO2(Eu) films prepared by ions implantation after films annealed above 1100 degreesC confirms the above argument.
Resumo:
Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77 K and room temperature (RT), respectively. We observed the strong PL at 1.54 mu m at RT. The 1.54 mu m PL intensity changes with the variation of concentration of oxygen. The most intense PL at 77 K in a-SiOx:H (Er) corresponds to O/Si = 1.0 and at RT to O/Si = 1.76. Based on our results, we propose that Er ions contributed to PL come from O-rich region in the film. Er ions in Si-rich region have no relation with FL. Temperature dependence of the intensity of the 1.54 mu m line of the Er3+ transition displays a very weak temperature quenching in Er-doped hydrogenated amorphous Si. The PL intensity at 250 K is a little more one half of that at 15 K.
Resumo:
Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.
Resumo:
Si-rich SiO2 films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 x 10(15) cm(-2) 400 keV Er ions. After annealing at 800 degrees C for 5 min the samples show room temperature luminescence around 1.54 mu m, characteristic of intra-4f emission from Er3+, upon excitation using an Ar ion laser.
Resumo:
. McCumber Judd-Ofelt Er3+4I13/24I15/2 .1 536 nm emi 8.6210-21 cm211.32 ms9.26 ms1536 nm 46.5 nm580 nm 4S3/24I15/2 .
Resumo:
// (Na3C6H5O7•2H2O)(NaF, NH4FNaBF4)pHLnF3 (Ln = La-Lu)NaREF4 (RE = Y, Yb, Lu)(Yb)(Lu)Eu3+, Tb3+Yb3+/Er3+, Yb3+/Ym3+(LEDs)/ CaWO4, CaWO4:Eu3+CaWO4:Tb3+
Resumo:
400-1800 PMTPPhenBipyBathx=0.35y=0.40527cd/m2 PTPCPFTPBathYbPT3BathYbPT3TPYbPC3Bath977YbPT3BathYbPC3BathYbPT3BathYbPM3TP2 ErPM3TP2NdPM3TP2Judd-OfeltEr3+Nd3+Er3+Nd3+
Resumo:
CeF3:Tb3+SOCl2CeF3:Tb3+ CeF3:Tb3+ CeF3:Tb3+ P123CeF3:Tb3+ 24 h NaYF4:Yb3+, Er3+ NaYF4:Yb3+, Er3+ NaYF4:Yb3+, Er3+ P123PVP TMB NaYF4:Yb3+, Er3+ 12 h YVO4:Eu3+ 80 nm43 nmYVO4:Eu3+ 5D0FT-IR XPS Eu3+ (5D0 level) CAPTES
Resumo:
-Ca2RSSiO46O2RYGdYVO4LaPO41Eu3+Tb3+Dy3+Sm3+Er3+Pb2SEMAFMCa2R8SiO46O2RYGdEu3+Tb3+Ca2Y8SiO46O26hCs4fC35Do-7F25D4-7F5Eu3+Tb3+Y3+10mol6molCa2Y851O46O2:Eu3Ca2Y8SiO46O2:Tb3+800Pb2Ca2Gd8SiO4 6O2Gd3+Pb2Gd3Gd3nA3YVO4PechiniYvO4:AAEu3 Dy3Sm3Er3YVO4VO43-Dy3Sm3Er3Y3+2molLaPO4Etl3+591nm5Do-7FlTb3543nm5D4-7F5Ce35d-4fTb3Eu3+Tb3+Eu3+Tb3LaPO4:CeTbCe3+Tb3+95XRDx0x1 YVxP1-xO4:Eu3+YVxP1-xO4:Eu3+0x1xEu3+x0Eu3+1Eu3+5Do7F2Etlsx0Y0.98Eu0.l2PO4Eu3+D2d5D07FISD07F2xY0.98Eu0.02VxP1-xO40xl0x0.5Eu3+5 D0-7F2x0.6Eu3+5D0-7F2YVxP1-xO4:A30x1AErSmVO43-A3+VO43-VO43-n-A3+n1VO43-0.1x1xx1VO43-A3+xRVO4:A3+RYLaGdAEuSmErRA3+YVO4GdVO4D2dYVO4GdVO4A3+LaVO4A3+LaVO4C1C1D2dA3+Gd3+A3+GdVO4
Resumo:
(PECVD)SiO2(NCSO)(a-SiOx:H).Fr(nc-Si)(a-n-Si).IFS/20HR.nc-Si800 nma-SiOx:H,a-SiOx:H1.54 mNCSO4.a-SiOx:HSiEr3+,ErRaman,a-SiEr3+nc-Si,
Resumo:
nc-Si/SiO_2<Er>(nc-Si)Er~(3+).514.5 nm,nc-Si/SiO_2<Er>750nm1.54m,nc-Si,Er~(3+)4I13/24I15/2.Er3+,1.54m,750 nm.H,,.,:nc-SiEr~(3+)nc-Si,Er~(3+),Er~(3+)1.54m,750nm.nc-SiEr~(3+),1.54m.
