Inorganic nanoparticles in organic-inorganic hybrid hosts for planar waveguides

Planar waveguides have been prepared on the ZrO2-(3-glycidiloxypropyl)trimethoxysilane (GPTS) system. Stable sols containing ZrO2 nanoparticles have been prepared and characterized by Photon Correlation Spectroscopy. The nanosized sol was embedded in (3-glycidoxipropyl)trimethoxisilane (GPTS) used as a hybrid host for posterior deposition. The opticalparameters of the waveguides such as refractive index, thickness and propagating modes and attenuation coefficient were measured at 632.8. 543.5 and 1550 nm by the prism coupling technique as a function of the Zr02 content. The planar waveguides present thickness of a few microns and support well confined propagating modes. Er doped samples display weak and broad (δλ≈96nm) emission at 1.5 μm.

Rare earth doped HfO2 nanoparticles embedded in SiO2-HfO2 planar waveguides. Preparation, optical, structural and spectroscopic characterization

In this work we present results on the preparation of planar waveguides based on HfO2 and HfO2-SiO2. Stable sols containing europium and erbium doped HfO2 nanoparticles have been prepared and characterized. The nanosized sol was either deposited (spin-coating) on quartz substrates or embedded in (3-glycidoxipropil)trimethoxisilane (GPTS) used as a hybrid host for posterior deposition. The refractive index dispersion and luminescence characteristics were determined for the resulting HfO2 films. The optical parameters of the waveguides such as refractive index, thickness and propagation losses were measured for the hybrid composite. The planar waveguides present thickness of a few micra and support well confined propagating modes.

Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Erbium-activated HfO2-based waveguides for photonics

70SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.

Dielectric and viscoelastic properties of cross-linked polyethylene aged under multi stressing conditions

Different measurements were performed in cross-linked polyethylene (XLPE) employed as insulating material in coaxial cables that were field-aged and laboratory-aged under multi-stressing conditions at room temperature. Samples were peeled from the XLPE cable insulation in three different positions: just below the external semiconductor layer (outer layer), in the middle (middle layer) and just above the internal semiconductor layer of the cable (inner layer). The imaginary part of the electric susceptibility showed three peaks that obey the Dissado-Hill model. For laboratory-aged XLPE samples peeled from the inner and from the middle positions the peak at very low frequency region increased while in samples from the outer position a quasi-DC conduction process was observed. In medium frequency range a broadening of the peak was observed for all samples. Viscoelastic properties determined through dynamic mechanical analysis suggested that the aging generates processes that promoted changes of the crystallinity and the cross-linking degrees of the polymer. Fourier transform infrared spectroscopy (FTIR) measurements revealed an increase of oxidation products (esters), evidence of polar residues of the bow-tie tree and the presence of cross-linking by-products (acetophenone). Optical and scanning electronic microscope (SEM) measurements in aged samples revealed the existence of voids and bow-tie trees that were formed during aging in the middle region of the cable.

Nucleation and crystallization of titania nanoparticles in silica titania planar waveguides: A study by low frequency Raman scattering

SiO2 (1-x) - TiO2 (x) waveguides, with the mole fraction x in the range 0.07 - 0.20 and thickness of about 0.4 μm, were deposited on silica substrates by a dip-coating technique. The thermal treatments at 700-900°C, used to fully densify the xerogels, produce nucleation of TiO2 nanocrystals even for the lowest TiO2 content. The nucleation of TiO2 nanocrystals and their growth by thermal annealing up to 1300°C were studied by waveguide Raman spectroscopy, for the SiO2 (0.8) - TiO2 (0.2) composition. By increasing the annealing temperature, the Raman spectrum evolves from that typical of the silica-titania glass to that of anatase, but brookite phase is dominant at intermediate temperatures. In the low. frequency region (5-50 cm-1) of the Raman spectra, acoustic vibrations of the nanocrystals are observed. From the measured line shapes, we can deduce the size distribution of the particles. The results are compared with those obtained from the line widths in the X-ray diffraction patterns. Nanocrystals with a mean size in the range 4-20 nm are obtained, by thermal annealing in a corresponding range of 800-1300°C.

Dielectric and ferroelectric properties of PZT and PT thin films for saw sensors applications

It is very important for the building of the SAW devices to study dielectric and ferroelectrics properties because every SAW device is based in piezoelectric effect that it is made up to transform an electric sign in the mechanical or acoustic sign and a mechanical or acoustic sign in an electric sign. Thus, the purpose of the present work is to prepare PbZr 0,53Ti0.47O3 (PZT) and PbTiO3 (PT) thin films on the Si (100) substrates across spin-coating using a chemical method based in polymeric precursors. After conventional treatment in the furnace, the films were characterized by impedance spectroscopy and hysteresis loops to know its dielectric and ferroelectric properties.

Ferroelectric switching and dielectric response of P(VDF-TrFE)/PMMA blends

The ferroelectric and the dielectric behaviors of binary blends formed by an equi-molar Poly(vinylidene fluoride trifluoroethylene) copolymer [P(VDF-TrFE)] and Poly(methyl methacrylate) [PMMA] were investigated, for several PMMA compositions. For 40 wt.% or more PMMA contents, the blends are completely amorphous. Below this value, they crystallize in the usual Cm2m polar structure of P(VDF-TrFE). The ferroelectric switching characteristics and the dielectric response of the blends demonstrate the formation of dynamically stable ferroelectric domains. Moreover, the blended films are highly transparent in the optical region. Therefore, thin films of these binary blends are good candidates as host materials for nonlinear optical applications.

Dielectric behavior of XLPE aged under multi-stressing conditions

In this work fresh cables were laboratory aged under multi-stressing conditions at room temperature. Foils were peeled from cables, with approximately 150 ?m thickness, from the outer, middle and inner positions of the XLPE cable insulating layer. For samples obtained from the outer cable layer position, an increasing near-permanent electrical conduction process with aging time was observed. At the middle and inner cable layer positions a flat-loss relaxation process was observed becoming a dominating process on the ageing. In addition, PEA results confirmed that degradation in the outer region of the XLPE cables arises from the simultaneous presence of dipoles and injected space charge that distorts the internal electric field on the ageing.

Relationship between the dielectric and mechanical properties and the ratio of epoxy resin to hardener of the hybrid thermosetting polymers

The relationship between the dielectric properties (dielectric constant, ε′, and loss factor, ε; activation energy, E a) and the ratio of epoxy resin (OG) to hardener of the epoxy resin thermosetting polymers was investigated. The amplitude of the ε″ peak decreases with increasing OG content until about 73 wt.% and slightly increases at higher OG content. The temperature of the position of the ε″ peak increases with the increasing of OG content, reaching maximum values for compositions in the range of 67 and 73 wt.%, and then it decreases sharply at higher OG content. The activation energy obtained from dielectric relaxation increased with increasing wt.% OG up to around 70 wt.%. Further increase in concentration of OG up to 83 wt.% reduced E a. The curves of tensile modulus and fracture toughness mechanical properties as a function of OG content presented a similar behavior. ©2006 Sociedade Brasileira de Química.

Dielectric properties of Pb Nb2 O6 ferroelectric ceramics at cryogenic temperatures

Complex dielectric permittivity measurements in Pb Nb2 O6 ceramics were performed in a frequency and temperature range of 1 kHz-1 MHz and from 15 to 900 K, respectively. The results revealed two dielectric anomalies showing typical characteristics of relaxor ferroelectric materials at cryogenic temperatures. Comparison with other tetragonal tungsten bronze (TTB) structure-type materials suggests the existence of successive phase transitions, which until now were not reported. The observed low temperature dielectric behaviors seem to be due to intrinsic physical characteristics related to the TTB structure. © 2007 American Institute of Physics.

Fabrication and characterization of GeO2-PbO optical waveguides

This work presents studies of GeO2-PbO thin films deposited by RF Sputtering for fabrication of rib-waveguide. GeO2-PbO vitreous targets were prepared melting the reagents in alumina crucible. Thin films were deposited at room temperature using pure Ar plasma, at 5 mTorr pressure and RF power of 40 W on substrates of (100) silicon wafers. Rutherford Backscattering Spectroscopy (RBS) analyses were employed for the determination of the chemical elements present in the GeO2-PbO film. Geometry and sidewall of the waveguides were investigated by Scanning Electron Microscopy (SEM). The mode propagation in the waveguide structure of GeO2-PbO thin films was analyzed using an integrated optic simulation software to obtain a monomode propagation. © The Electrochemical Society.

Structural and dielectric properties of relaxor Sr0.5Ba 0.5Bi2Nb2O9 ceramic

Sr0.5Ba0.5Bi2Nb2O 9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant Tm decreases with increasing frequency, and shifts towards higher temperature side. The activation energy Ea≈0·194±0·03 eV and freezing temperature Ta≈371±2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. © 2010 Maney Publishing.

Dielectric tunability in (1-x)[Pb(Mg 1/3Nb 2/3)O 3]-xPbTiO 3 ceramics for tunable devices application

The dielectric properties of the 0.65[Pb(Mg 1/3Nb 2/3)O 3]-0.35PbTiO 3 ferroelectric ceramic composition were investigated viewing the capability to be used for tunable microwave applications. The dielectric response has been studied for three selected temperatures (300 K, 370 K and 400 K), below the paraelectric- ferroelectric phase transition temperature, as a function of the applied 'bias' electric field. The obtained dielectric tunability was found to be around 60 %, under an electric field of 19 kV/cm, which makes the studied ceramic composition an excellent candidate for application in the electro-electronic industry, as tunable devices. © 2010 IEEE.

Microscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramics

Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.