996 resultados para DOPED LINBO3
Resumo:
We report a unique, single source precursor Prussian blue (iron(III) ferrocyanide (Fe-4(III)Fe-II(CN)(6)](3))) for the synthesis of Fe/Fe3C nanoparticle encapsulated N-doped graphitic layers and bamboo-like graphitic nanotubes. Hollow N-doped graphite (N-HG) nanostructures are obtained when the encapsulated nanostructures are treated with an acid. Both the encapsulated nanostructures and N-HG are shown to be applicable as bi-functional electrocatalysts for oxygen reduction (ORR) and oxygen evolution reactions (OER). The ORR activity is shown to be improved for N-HG and is comparable to commercial Pt/C. On the other hand, encapsulated nanostructures exhibit OER activity with long-term stability comparable to commercial RuO2.
Resumo:
The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.
Resumo:
White-light emitting Dy3+ doped layered BiOCl phosphors were synthesized by the solid state route and their structure was confirmed by the Rietveld refinement method. On substitution of Dy3+ ion to Bi3+-site in BiOCl, the photoluminescence spectra exhibit blue (F-4(9/2) -> H-6(15/2)), yellow (F-4(9/2) -> H-6(13/2)) and red (F-4(9/2) -> H-6(11/2)) emissions which function together to generate white light. It was found that the emission intensity increases up to 9 mol% of Dy3+ and then quenched due to dipole-dipole interaction. Judd-Ofelt theory and radiative properties suggest that the present phosphors have a long lifetime, high quantum efficiency, excellent color purity and better stimulated emission cross-section compared to reported Dy3+ doped compounds. The obtained color chromaticity results are close to the National Television System Committee standard and clearly establish the bright prospects of these phosphors in white luminescence. (C) 2015 Elsevier Ltd. All rights reserved.
Resumo:
The magnetic structures and the magnetic phase transitions in the Mn-doped orthoferrite TbFeO3 studied using neutron powder diffraction are reported. Magnetic phase transitions are identified at T-N(Fe/Mn) approximate to 295K where a paramagnetic-to-antiferromagnetic transition occurs in the Fe/Mn sublattice, T-SR(Fe/Mn) approximate to 26K where a spin-reorientation transition occurs in the Fe/Mn sublattice and T-N(R) approximate to 2K where Tb-ordering starts to manifest. At 295 K, the magnetic structure of the Fe/Mn sublattice in TbFe0.5Mn0.5O3 belongs to the irreducible representation Gamma(4) (G(x)A(y)F(z) or Pb'n'm). A mixed-domain structure of (Gamma(1) + Gamma(4)) is found at 250K which remains stable down to the spin re-orientation transition at T-SR(Fe/Mn) approximate to 26K. Below 26K and above 250 K, the majority phase (>80%) is that of Gamma(4). Below 10K the high-temperature phase Gamma(4) remains stable till 2K. At 2 K, Tb develops a magnetic moment value of 0.6(2) mu(B)/f.u. and orders long-range in F-z compatible with the Gamma(4) representation. Our study confirms the magnetic phase transitions reported already in a single crystal of TbFe0.5Mn0.5O3 and, in addition, reveals the presence of mixed magnetic domains. The ratio of these magnetic domains as a function of temperature is estimated from Rietveld refinement of neutron diffraction data. Indications of short-range magnetic correlations are present in the low-Q region of the neutron diffraction patterns at T < T-SR(Fe/Mn). These results should motivate further experimental work devoted to measure electric polarization and magnetocapacitance of TbFe0.5Mn0.5O3. (C) 2016 AIP Publishing LLC.
Resumo:
We report a unique, single source precursor Prussian blue (iron(III) ferrocyanide (Fe-4(III)Fe-II(CN)(6)](3))) for the synthesis of Fe/Fe3C nanoparticle encapsulated N-doped graphitic layers and bamboo-like graphitic nanotubes. Hollow N-doped graphite (N-HG) nanostructures are obtained when the encapsulated nanostructures are treated with an acid. Both the encapsulated nanostructures and N-HG are shown to be applicable as bi-functional electrocatalysts for oxygen reduction (ORR) and oxygen evolution reactions (OER). The ORR activity is shown to be improved for N-HG and is comparable to commercial Pt/C. On the other hand, encapsulated nanostructures exhibit OER activity with long-term stability comparable to commercial RuO2.
Resumo:
The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.
Resumo:
GdxZn1-xO (x = 0, 0.02, 0.04 and 0.06) nanostructures have been synthesized using sol-gel technique and characterized to understand their structural and magnetic properties. X-ray diffraction (XRD) results show that Gd (0, 2, 4 and 6 %)-doped ZnO nanostructures crystallized in the wurtzite structure having space group C3(v) (P6(3)mc). Photoluminescence and Raman studies of Gd-doped ZnO powder show the formation of singly ionized oxygen vacancies. X-ray absorption spectroscopy reveals that Gd replaces the Zn atoms in the host lattice and maintains the crystal symmetry with slight lattice distortion. Gd L-3-edge spectra reveal charge transfer between Zn and Gd dopant ions. O K-edge spectra also depict the charge transfer through the oxygen bridge (Gd-O-Zn). Weak magnetic ordering is observed in all Gd-doped ZnO samples.
Resumo:
Recently, much research has been focused on finding new thermoelectric materials. Cu-based quaternary chalcogenides that belong to A(2)BCD(4) (A = Cu; B = Zn, Cd; C = Sn, Ge; D = S, Se, Te) are wide band gap materials and one of the potential thermoelectric materials due to their complex crystal structures. In this study, In-doped quaternary compounds Cu2ZnGe1-xInxSe4 (x = 0, 0.025, 0.05, 0.075, 0.1) were prepared by a solid state synthesis method. Powder x-ray diffraction patterns of all the samples showed a tetragonal crystal structure (space group I-42m) of the main phase with a trace amount of impurity phases, which was further confirmed by Rietveld analysis. The elemental composition of all the samples showed a slight deviation from the nominal composition with the presence of secondary phases. All the transport properties were measured in the temperature range 373-673 K. The electrical resistivity of all the samples initially decreased up to similar to 470 K and then increased with increase in temperature upto 673 K, indicating the transition from semiconducting to metallic behavior. Positive Seebeck coefficients for all the samples revealed that holes are the majority carriers in the entire temperature range. The substitution of In3+ on Ge4+ introduces holes and results in the decrease of resistivity as well as the Seebeck coefficient, thereby leading to the optimization of the power factor. The lattice thermal conductivity of all the samples decreased with increasing temperature, indicating the presence of phonon-phonon scattering. As a result, the thermoelectric figure of merit (zT) of the doped sample showed an increase as compared to the undoped compound.
Resumo:
We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Resumo:
Sn4+-doped In2O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8nm, 10% Sn4+) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3)(3)OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around =1950nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (approximate to 35mcm(-1)). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems.
Resumo:
Recently, research in copper-based quaternary chalcogenide materials has been found to be interesting for the study of thermoelectric properties because of their low thermal conductivity due to complex crystal structures. In the present work, stoichiometric quaternary chalcogenide compounds Cu2CdSn1-xInxSe4(x = 0, 0.025, 0.05, 0.1) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I (4) over bar 2m of the main phase. In addition to this phase, a small amount of impurity phase CdSe was present in all the samples, as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by an Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 350 K-723 K. The positive Seebeck coefficient of all the compounds indicate that the majority carriers are holes. The Seebeck coefficient and electrical resistivity did not follow the trend in the expected manner with In doping, which could be influenced by the presence of the impurity phases. The total thermal conductivity of all the samples was dominated by the lattice thermal conductivity, while the electronic contribution was very small due to the low carrier contribution. A lattice thermal conductivity decrease with an increase of temperature indicates the dominance of phonon-phonon scattering at higher temperatures. The maximum figure of merit zT = 0.30 at 723 K was obtained for the compound Cu2CdSn0.9In0.1Se4. (C) 2016 Elsevier Ltd. All rights reserved.
Resumo:
Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS2. (C) 2016 AIP Publishing LLC.
Resumo:
We report a facile synthesis of three-dimensional (3D) nanodendrites of Pd nanoparticles (NPs) and nitrogen-doped carbon NPs (N-CNPs) by electroless deposition of Pd2+ ions. N-CNPs being an electron-enriched material act as a reducing agent. Moreover, the availability of a variety of nitrogen species in N-CNPs promotes the open arm structure as well as stabilizes the oriented 3D assembly of primary Pd NPs. The dendrites exhibit superior catalytic activity for methanol (0.5 M) oxidation in alkaline media (1 M NaOH) which is ascribed to the large electrochemical active surface area and the enhanced mass activity with repeated use. Further mass activity improvement has been realized after acid-treatment of dendrites which is attributed to the increment in the -OH group. The dendrites show higher mass activity (J(f) similar to 653 A g(-1)) in comparison with a commercial Pt-carbon/Pd-carbon (Pt-C/Pd-C) catalyst (J(f) similar to 46 and 163 A g(-1), respectively), better operational stability, superior CO tolerance with I-f/I-b (similar to 3.7) over a commercial Pt-C/Pd-C catalyst (I-f/I-b similar to 1.6 and 1.75, respectively) and may serve as a promising alternative to commercial Pt-C catalysts for anode application in alkaline fuel cells. To ensure the adaptability of our 3D-nanodendrites for other catalytic activities, we studied 4-nitrophenol reduction at room temperature. The 3D-nanodendrites show excellent catalytic activity toward 4-nitrophenol reduction, as well.
Resumo:
The magnetic structures and the magnetic phase transitions in the Mn-doped orthoferrite TbFeO3 studied using neutron powder diffraction are reported. Magnetic phase transitions are identified at T-N(Fe/Mn) approximate to 295K where a paramagnetic-to-antiferromagnetic transition occurs in the Fe/Mn sublattice, T-SR(Fe/Mn) approximate to 26K where a spin-reorientation transition occurs in the Fe/Mn sublattice and T-N(R) approximate to 2K where Tb-ordering starts to manifest. At 295 K, the magnetic structure of the Fe/Mn sublattice in TbFe0.5Mn0.5O3 belongs to the irreducible representation Gamma(4) (G(x)A(y)F(z) or Pb'n'm). A mixed-domain structure of (Gamma(1) + Gamma(4)) is found at 250K which remains stable down to the spin re-orientation transition at T-SR(Fe/Mn) approximate to 26K. Below 26K and above 250 K, the majority phase (>80%) is that of Gamma(4). Below 10K the high-temperature phase Gamma(4) remains stable till 2K. At 2 K, Tb develops a magnetic moment value of 0.6(2) mu(B)/f.u. and orders long-range in F-z compatible with the Gamma(4) representation. Our study confirms the magnetic phase transitions reported already in a single crystal of TbFe0.5Mn0.5O3 and, in addition, reveals the presence of mixed magnetic domains. The ratio of these magnetic domains as a function of temperature is estimated from Rietveld refinement of neutron diffraction data. Indications of short-range magnetic correlations are present in the low-Q region of the neutron diffraction patterns at T < T-SR(Fe/Mn). These results should motivate further experimental work devoted to measure electric polarization and magnetocapacitance of TbFe0.5Mn0.5O3. (C) 2016 AIP Publishing LLC.
Resumo:
The magnetic structures and the magnetic phase transitions in the Mn-doped orthoferrite TbFeO3 studied using neutron powder diffraction are reported. Magnetic phase transitions are identified at T-N(Fe/Mn) approximate to 295K where a paramagnetic-to-antiferromagnetic transition occurs in the Fe/Mn sublattice, T-SR(Fe/Mn) approximate to 26K where a spin-reorientation transition occurs in the Fe/Mn sublattice and T-N(R) approximate to 2K where Tb-ordering starts to manifest. At 295 K, the magnetic structure of the Fe/Mn sublattice in TbFe0.5Mn0.5O3 belongs to the irreducible representation Gamma(4) (G(x)A(y)F(z) or Pb'n'm). A mixed-domain structure of (Gamma(1) + Gamma(4)) is found at 250K which remains stable down to the spin re-orientation transition at T-SR(Fe/Mn) approximate to 26K. Below 26K and above 250 K, the majority phase (>80%) is that of Gamma(4). Below 10K the high-temperature phase Gamma(4) remains stable till 2K. At 2 K, Tb develops a magnetic moment value of 0.6(2) mu(B)/f.u. and orders long-range in F-z compatible with the Gamma(4) representation. Our study confirms the magnetic phase transitions reported already in a single crystal of TbFe0.5Mn0.5O3 and, in addition, reveals the presence of mixed magnetic domains. The ratio of these magnetic domains as a function of temperature is estimated from Rietveld refinement of neutron diffraction data. Indications of short-range magnetic correlations are present in the low-Q region of the neutron diffraction patterns at T < T-SR(Fe/Mn). These results should motivate further experimental work devoted to measure electric polarization and magnetocapacitance of TbFe0.5Mn0.5O3. (C) 2016 AIP Publishing LLC.