962 resultados para Carlos V,


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A metal-less RXI collimator has been designed. Unlike to the conventional RXI collimators, whose back surface and central part of the front surface have to be metalized, this collimator does not include any mirrored surface. The back surface is designed as a grooved surface providing two TIR reflections for all rays impinging on it. The main advantage of the presented design is lower manufacturing cost since there is no need for the expensive process of metalization. Also, unlike to the conventional RXI collimators this design performs good colour mixing. The first prototype of V-groove RXI collimator has been made of PMMA by direct cutting using a five axis diamond turning machine. The experimental measurements of the first prototype are presented.

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Two quasi-aplanatic free-form solid V-groove collimators are presented in this work. Both optical designs are originally designed using the Simultaneous Multiple Surface method in three dimensions (SMS 3D). The second optically active surface in both free-form V-groove devices is designed a posteriori as a grooved surface. First two mirror (XX) design is designed in order to clearly show the design procedure and working principle of these devices. Second, RXI free-form design is comparable with existing RXI collimators; it is a compact and highly efficient design made of polycarbonate (PC) performing very good colour mixing of the RGGB LED sources placed off-axis. There have been presented rotationally symmetric non-aplanatic high efficiency collimators with colour mixing property to be improved and rotationally symmetric aplanatic devices with good colour mixing property and efficiency to be improved. The aim of this work was to design a free-form device in order to improve colour mixing property of the rotationally symmetric nonaplanatic RXI devices and the efficiency of the aplanatic ones.

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In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.

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A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

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Contiene: Parafrasi que traduze dos framentos del libro IV de Retorica de Benedicto Arias Montano en que trata de ... Honorato Juan ... / por Roque Iason Verja. Traduccion de la Epistola de Nicolas Nicolay Grudio ... / por don Francisco de la Torre ...

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Contiene: Parafrasi que traduze dos framentos del libro IV de Retorica de Benedicto Arias Montano en que trata de ... Honorato Juan ... / por Roque Iason Verja. Traduccion de la Epistola de Nicolas Nicolay Grudio ... / por don Francisco de la Torre ...

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In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

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Memorial elevado al Rey por los Diputados de Valencia en el que se relata detalladamente los sucesos acaecidos con Felix Goya tras haberle desprovisto del Oficio de Guarda ...

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Segun Palau I, 196, fué publicado en Valencia en 1802

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In this work the failure analysis carried out in III-V concentrator multijunction solar cells after a temperature accelerated life test is presented. All the failures appeared have been catastrophic since all the solar cells turned into low shunt resistances. A case study in failure analysis based on characterization by optical microscope, SEM, EDX, EQE and XPS is presented in this paper, revealing metal deterioration in the bus bar and fingers as well as cracks in the semiconductor structure beneath or next to the bus bar. In fact, in regions far from the bus bar the semiconductor structure seems not to be damaged. SEM images have dismissed the presence of metal spikes inside the solar cell structure. Therefore, we think that for these particular solar cells, failures appear mainly as a consequence of a deficient electrolytic growth of the front metallization which also results in failures in the semiconductor structure close to the bus bars.

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Contiene: La Carta que dirige el Príncipe Don Carlos de Viana à Don Fernando Séptimo, Rey de las Españas y de las Indias