Increasing the efficiency of utilization of soil and fertilizer phosphorus in the subtropical and tropical agricultural systems C

As a rule, soils of the subtropical and tropical regions, in which rainfall is not limiting, are acidic, and low in phosphorus, and, to a less extent, in other macro and micronutrients as well, such a sulfur, boron and zinc. The establishment of a permanent agricultural prac. tice therefore, demands relatively high usage of liming and phosphatic fertilization, to begin with. Several approaches, not mutually exclusive, could be used in order to increase the efficiency of utilization of soil and fertilizer phosphorus so that, goal of diminishing costs of production is reached. The use of liming materials bringing up pH to 6.0-6.5 causes the conversion of iron and aluminum phosphates to more available calcium phosphates; on the other hand, by raising calcium saturation in the exchange complex, it improves the development and operation if the root system which allows c or a higher utilization of all soil nutrients, including phosphorus, and helps of stand water deficits which may occur. The role of mycorrhizal fungi should be considered as a way of increasing soil and fertilizer P utilization, as well as the limitations thereof. Screening of and breeding for varieties with higher efficiency of uptake and utilization of soil and fertilizer phosphorus leads to a reduction in cost of inputs and to higher benefit/cost ratios. Corrective fertilization using ground rock phosphate helps to saturate the fixation power of the soil thereby reducing, as a consequence, the need for phosphorus in the maintenance fertilization. Maintenance fertilization, in which soluble phos-phatic sources are used, could be improved by several means whose performance has been proved: limimg, granula tion, placement, use of magnesium salts. Last, cost of phosphate fertilization could be further reduced, without impairing yields, through impairing yields, through changes in technology designed to obtain products better adapted to local conditions and to the availability or raw materials and energy sources.

Funcionalització regioselectiva d'una cetona amb metal·lacarborans polianiònics

L’ús de metal·lacarborans en la síntesi de compostos polianiònics amb un alt contingut en bor i amb bons rendiments és un tema d’alt interès i estudi al grup de Síntesi Inorgànica i Catàlisi de l’ICMAB. Els metal·lacarborans presenten diverses aplicacions innovadores com la BNCT (Boron Neutron Capture Therapy),1 tractament d’aigües residuals,2 activitats catalítiques3 i com a agents dopants de membranes polimèriques conductores.4 Amb la perspectiva d’emprar clústers de bor per materials moleculars funcionalitzats, hem iniciat una investigació que busca la síntesi de productes híbrids amb múltiples elements electroactius (metal·lacarborans) i el grup funcional carbonil, que gràcies a la seva reactivitat coneguda ens permetrà aplicar les molècules sintetitzades a futures reaccions i aplicacions. Una de les condicions inicials plantejades en aquesta investigació és l’ús de productes químics assequibles i de gran disponibilitat, per tal de poder assegurar l’obtenció de precursors per a futures aplicacions amb bons rendiments i ràpids de sintetitzar. Per assolir aquest objectiu es van iniciar les investigacions amb la cetona més simple coneguda, l’acetona (CH3-CO-CH3) (pKa = 19.3) com a producte de partida. A partir de la reacció d’aquesta amb una base forta no nucleòfila es genera CH3-COCH2 (-). Si s’aconsegueix prevenir o minimitzar la reacció d’addició aldòlica, l’anió CH3- CO-CH2 (-) pot atacar nucleofílicament al carboni contigu al catió oxoni5 de la molècula de cobaltabisdicarballur dioxanat (cosà dioxanat), [3,3’-Co(8-(OCH2CH2)2-1,2- C2B9H10)(1’,2’-C2B9H11)], generant un derivat del cosà dioxanat que conté un grup carbonil. Aquest procediment pot ser repetit per introduir diverses unitats de metal·lacarborans (cosà, fesà, etc.), tot i que aquest procés presenta una gran dispersió de subproductes, fet que fa baixar el rendiment global i li resta interès. Un procediment molt més efectiu i que dóna un control de la regioselectivitat molt major dels centres electroactius incorporats és la síntesi acetoacètica (pKa H intercarbonílic = 10.7). Múltiples molècules homo i hetero polianiòniques amb metal·lacarborans han estat sintetitzades amb èxit en aquest treball, amb un control regioselectiu molt precís mitjançant aquest mètode sintètic, i caracteritzades per mètodes electroquímics.

Desarrollo de un método para acoplar arenos a metalacarboranos

El uso de metalacarboranos en la síntesis de compuestos aril-cobaltobis(dicarballuro) ha despertado un nuevo tema de interés y de estudio en el grupo de Síntesi Inorgànica i Catàlisi del ICMAB-CSIC. Los metalacarboranos presentan diversas aplicaciones innovadoras como la BNCT (Boron Neutron Capture Therapy), el tratamiento de aguas residuales, actividades catalíticas, como agentes dopantes en membranas poliméricas conductoras, y como integrantes en sensores potenciométricos, entre otros. El principal objetivo de este trabajo de investigación ha consistido en desarrollar un método de acoplamiento B–C sobre el anión sándwich [3,3’-Co-(1,2-C2B9H11)2]- para la formación de nuevos derivados aril-cobalto-bis(dicarballuro); éstos se han sintetizado por su posible capacidad fotoactiva. Este acoplamiento transcurre mediante una reacción de sustitución electrófila aromática (SEAr) sobre el anillo aromático o desde la óptica del metalacarborano, mediante una sustitución nucleófila inducida electrofilicamente (EINS). Dicha reacción requiere el uso de un ácido de Lewis como catalizador. El hecho que se haya utilizado AlCl3 como catalizador, hace que la reacción que se desarrolla en este trabajo recuerde de alguna manera a una reacción de Friedel-Crafts, pese a que la reacción está dirigida a la formación de un enlace B–C mediado por un ácido de Lewis. El principal problema de las reacciones de Friedel-Crafts es la elevada cantidad de areno que se precisa para llevar a cabo la reacción, debido a que el disolvente empleado puede actuar como fuente de electrófilos. El procedimiento empleado en nuestro caso utiliza el mesitileno como disolvente, el cual posee un gran impedimento estérico y un alto punto de ebullición. De esta manera, se puede realizar esta reacción utilizando entre 1.5 y 10 equivalentes de areno respecto al cobalto-bis(dicarballuro) sin que el disolvente actúe como reactivo. Se han estudiado y optimizado las condiciones experimentales para que el método sintético que genera el enlace B–C sea lo más universal posible para cualquier tipo de anillo aromático. Se han probado una gran diversidad de anillos aromáticos, desde anillos aromáticos fuertemente activados a los más desactivados, así como anillos aromáticos heterocíclicos. Finalmente, las condiciones de síntesis extraídas de este estudio son muy satisfactorias para los anillos activados probados y para los anillos débilmente desactivados. En cambio, para los arenos fuertemente desactivados, los rendimientos de la reacción han sido bajos. Por otro lado, las pruebas realizadas sobre los anillos heterocíclicos no han sido exitosas y no se ha producido el acoplamiento B–C.

Vacancy and interstitial depth profiles in ion-implanted silicon

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy¿oxygen center, and the interstitial profile, represented by the interstitial carbon¿substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account.

Endocytic and secretory traffic in Arabidopsis merge in the trans-Golgi network/early endosome, an independent and highly dynamic organelle.

Plants constantly adjust their repertoire of plasma membrane proteins that mediates transduction of environmental and developmental signals as well as transport of ions, nutrients, and hormones. The importance of regulated secretory and endocytic trafficking is becoming increasingly clear; however, our knowledge of the compartments and molecular machinery involved is still fragmentary. We used immunogold electron microscopy and confocal laser scanning microscopy to trace the route of cargo molecules, including the BRASSINOSTEROID INSENSITIVE1 receptor and the REQUIRES HIGH BORON1 boron exporter, throughout the plant endomembrane system. Our results provide evidence that both endocytic and secretory cargo pass through the trans-Golgi network/early endosome (TGN/EE) and demonstrate that cargo in late endosomes/multivesicular bodies is destined for vacuolar degradation. Moreover, using spinning disc microscopy, we show that TGN/EEs move independently and are only transiently associated with an individual Golgi stack.

Photosynthesis rate, chlorophyll content and initial development of physic nut without micronutrient fertilization

Few studies in Brazil have addressed the need for micronutrients of physic nut focusing on physiological responses, especially in terms of photosynthesis. The objective of this study was to evaluate the effects of omission of boron (B), copper (Cu), iron (Fe), manganese (Mn) and zinc (Zn) on Jatropha curcas L.. The experimental design was a randomized block with four replications. The treatments were complete solution (control) and solution without B, Cu, Fe, Mn, and Zn. We evaluated the chlorophyll content (SPAD units), photosynthetic rate, dry matter production and accumulation of micronutrients in plants, resulting from different treatments. The first signs of deficiency were observed for Fe and B, followed by Mn and Zn, while no symptoms were observed for Cu deficiency. The micronutrient omission reduced the dry matter yield, chlorophyll content and photosynthetic rate of the plants differently for each omitted nutrient. It was, however, the omission of Fe that most affected the development of this species in all parameters evaluated. The treatments negatively affected the chlorophyll content, evaluated in SPAD units, and the photosynthetic rate, except for the omission of B. However this result was probably due to the concentration effect, since there was a significant reduction in the dry matter production of B-deficient plants.

Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD

In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers.

A new and simple variable-angle accessory for infrared specular reflectance

A simple, low-cost accessory (patent pending) with only two flat mirrors and a new variable-angle mechanism has been developed for infrared specular reflectance measurements. The system allows the angles of incidence to be varied continuously from 15° (near normal incidence) to 85° (near grazing angle) without losing the alignment of the accessory. The reflectivity of boron nitride thin films deposited on metallic substrates has been measured at different angles of incidence to demonstrate the utility of this accessory.

Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering

The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.

Micronutrient Accumulation in Conilon Coffee Berries with Different Maturation Cycles

ABSTRACT The number of days between anthesis and maturation of conilon coffee berries varies according to the genotype. Thus, it is believed that periods of greater nutrient demand for fruit formation also vary according to the genotype, directly influencing fertilizer management. The goal of this study was to establish accumulation curves for the micronutrients boron, copper, iron, manganese, and zinc in conilon coffee trees with different maturation cycles. The experiment was conducted in Nova Venécia, State of Espírito Santo, Brazil, during the reproductive cycle of the 2010/2011 crop year. Four coffee genotypes with different maturation cycles (early, intermediate, late, and super-late) were studied. A completely randomized experimental design was used with five replications. The treatments correspond to the accumulation of B, Cu, Fe, Mn, and Zn in the berries every 28 days in the period from flowering to harvest. The early, intermediate, and late genotypes accumulated Fe, Cu, and Mn in a similar manner, with sigmoid curves, whereas the super-late genotype accumulated these nutrients exponentially. Zn was accumulated by all four genotypes following a sigmoid curve. The early, intermediate, and late genotypes accumulated B linearly, whereas the super-late genotype accumulated B following a sigmoid curve. The maturation cycle of the genotype must be taken into account to apply the correct rate of micronutrient fertilization in coffee plantations.

Real-time monitoring of the silicidation process of tungsten filaments at high temperature used as catalysers for silane decomposition

The scope of this work is the systematic study of the silicidation process affecting tungsten filaments at high temperature (1900ºC) used for silane decomposition in the hot-wire chemical vapour deposition technique (HWCVD). The correlation between the electrical resistance evolution of the filaments, Rfil(t), and the different stages of the their silicidation process is exposed. Said stages correspond to: the rapid formation of two WSi2 fronts at the cold ends of the filaments and their further propagation towards the middle of the filaments; and, regarding the hot central portion of the filaments: a initial stage of silicon dissolution into the tungsten bulk, with a random duration for as-manufactured filaments, followed by the inhomogeneous nucleation of W5Si3 (which is later replaced by WSi2) and its further growth towards the filaments core. An electrical model is used to obtain real-time information about the current status of the filaments silicidation process by simply monitoring their Rfil(t) evolution during the HWCVD process. It is shown that implementing an annealing pre-treatment to the filaments leads to a clearly repetitive trend in the monitored Rfil(t) signatures. The influence of hydrogen dilution of silane on the filaments silicidation process is also discussed.

Laskentamalli PKL-koelaitteiston pienen vuodon kokeen simuloimiseksi Apros-ohjelmistolla

Työn tavoitteena oli tehdä Apros-laskentamalli PKL-koelaitteistosta ja testata kuinka hyvin Apros pystyy laskemaan PKL-koelaitteistolla suoritetun E2.2 pienen vuodon kokeen. Tavoitteena oli myös tarkastella boorittoman veden tulpan etenemistä pienen vuodon kokeen aikana. PKL-koelaitteisto vastaa saksalaista sähköteholtaan 1300 MW olevaa Philippsburg 2 painevesilaitosta. Koelaitteiston tilavuudet ja teho on skaalattu kertoimella 145. Työssä tehdyllä laskentamallilla tarkasteltiin boorittoman veden tulpan liikkumista pienen vuodon kokeen aikana. Kun malli oli valmis, laskenta suoritettiin Apros 5.05 versiolla. Boorittoman veden tulpan etenemisen laskennassa käytettiin toisen kertaluvun diskretointia, jolla booripitoisuuden muutokset säilyvät teräväreunaisina. Laskentamalli pystyi kuvaamaan koelaitteistolla suoritetussa pienen vuodon kokeessa tapahtuneet ilmiöt varsin hyvin. Eroa koetuloksiintuli pääkiertopiirien luonnonkiertojen alkamishetkistä ja primääripaineen käyttäytymisessä. Kokeen alkutilanne ei ollut stationääritila, joten alkutilanteen asettamisessa oli hankaluuksia. Varsinkin pääkiertopiirien veden pinnankorkeuksienasettamisessa oli vaikeuksia, koska veden pinnankorkeuksien erot pyrkivät tasoittumaan nopeasti kokeen aikana. Apros pystyi laskemaan PKL-koelaitteistolla suoritetun pienen vuodon kokeen hyvin. Mallilla tulisi kuitenkin laskea vielä toisentyyppisiäkin kokeita, ennen kuin voidaan varmuudella tietää mallin toimivuus. PKL-koelaitteisto vastaa pääpiirteiltään Suomeen rakennettavaa Olkiluoto 3 ydinvoimalaitosta. Tehty työ antaa lisävarmuutta, kun Olkiluoto 3 laitoksen turvallisuustarkasteluita tehdään.

Characterization of nutrient deficiency in Hancornia speciosa Gomes seedlings by omitting micronutrients from the nutrient solution

Hancornia speciosa Gomes (Mangaba tree) is a fruit tree belonging to the Apocynaceae family and is native to Brazil. The production of seedlings of this species is limited by a lack of technical and nutritional expertise. To address this deficiency, this study aimed to characterize the visual symptoms of micronutrient deficiency and to assess growth and leaf nutrient accumulation in H. speciosa seedlings supplied with nutrient solutions that lack individual micronutrients. H. speciosa plants were grown in nutrient solution in a greenhouse according to a randomized block design, with four replicates. The treatments consisted of a group receiving complete nutrient solution and groups treated with a nutrient solution lacking one of the following micronutrients: boron (B), copper (Cu), iron (Fe), manganese (Mn), zinc (Zn), and molybdenum (Mo). The visual symptoms of nutrient deficiency were generally easy to characterize. Dry matter production was affected by the omission of micronutrients, and the treatment lacking Fe most limited the stem length, stem diameter, root length, and number of leaves in H. speciosa seedlings as well as the dry weight of leaves, the total dry weight, and the relative growth in H. speciosa plants. The micronutrient contents of H. speciosa leaves from plants receiving the complete nutrient solution treatment were, in decreasing order, Fe>Mn>Cu>Zn>B.

Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC)

N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.

Total synthesis of entecavir

Entecavir (BMS-200475) was synthesized from 4-trimethylsilyl-3-butyn-2-one and acrolein. The key features of its preparation are: (i) a stereoselective boron-aldol reaction to afford the acyclic carbon skeleton of the methylenecylopentane moiety; (ii) its cyclization by a Cp2TiCl-catalyzed intramolecular radical addition of an epoxide to an alkyne; and (iii) the coupling with a purine derivative by a Mitsunobu reaction.