气相平衡扩散法制备β-BBO薄膜

用气相平衡扩散（VTE）法在α-偏硼酸钡单晶衬底上成功地制备出β-偏硼酸钡薄膜。使用X射线衍射技术（XRD）测试了样品的衍射峰，并比较了不同温度、不同保温时间、不同衬底方向对薄膜的影响。

液相外延技术发展现状

本文介绍了液相外延技术在制备硅材料、碲镉汞材料、石榴石型单晶材料、Ⅲ-Ⅴ族半导体材料和其他一些无机材料方面的应用，简述了液相外延技术近十多年来在系统改善、工艺改进和相关理论研究方面的成果，并指出了液相外延技术相对于其他外延技术的优势及其发展需要克服的困难。

Defects in LPE-grown beta-barium borate (beta-BaB2O4) thin films

Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

液相外延法制备β-BBO薄膜

采用液相外延法在掺Sr^2＋的Q—BBO（001）衬底上制备了β-BBO薄膜，研究了制备条件对薄膜质量的影响．结果表明：当生长温度为810℃时，转速为300r／min生长的外延膜具有较高的结晶质量，且随着生长时间的延长，外延膜的结晶质量有所提高．β—BBO薄膜呈C轴高度择优取向，薄膜的双晶摇摆曲线半峰宽值FWHM仅为676．6”，表明β-BBO薄膜较好的结晶质量；在不具备相位匹配的条件下，β—BBO外延膜也能够实现二次谐波输出．

Inversão de funções do plano no plano aplicada ao cálculo de azeótropos

Azeotropia é um fenômeno termodinâmico onde um líquido em ebulição produz um vapor com composição idêntica. Esta situação é um desafio para a Engenharia de Separação, já que os processos de destilação exploram as diferenças entre as volatilidades relativas e, portanto, um azeótropo pode ser uma barreira para a separação. Em misturas binárias, o cálculo da azeotropia é caracterizado por um sistema não-linear do tipo 2 × 2. Um interessante e raro caso é o denominado azeotropia dupla, que pode ser verificado quando este sistema não-linear tem duas soluções, correspondendo a dois azeótropos distintos. Diferentes métodos tem sido utilizados na resolução de problemas desta natureza, como métodos estocásticos de otimização e as técnicas intervalares (do tipo Newton intervalar/bisseção generalizada). Nesta tese apresentamos a formulação do problema de azeotropia dupla e uma nova e robusta abordagem para a resolução dos sistemas não-lineares do tipo 2 × 2, que é a inversão de funções do plano no plano (MALTA; SALDANHA; TOMEI, 1996). No método proposto, as soluções são obtidas através de um conjunto de ações: obtenção de curvas críticas e de pré-imagens de pontos arbritários, inversão da função e por fim, as soluções esperadas para o problema de azeotropia. Esta metodologia foi desenvolvida para resolver sistemas não-lineares do tipo 2 × 2, tendo como objetivo dar uma visão global da função que modela o fenômeno em questão, além, é claro, de gerar as soluções esperadas. Serão apresentados resultados numéricos para o cálculo dos azeótropos no sistema benzeno + hexafluorobenzeno a baixas pressões por este método de inversão. Como ferramentas auxiliares, serão também apresentados aspectos numéricos usando aproximações clássicas, tais como métodos de Newton com técnicas de globalização e o algorítmo de otimização não-linear C-GRASP, para efeito de comparação.

Bioelectronics meets nanomedicine for cardiovascular implants: PEDOT-based nanocoatings for tissue regeneration.

BACKGROUND: An exciting direction in nanomedicine would be to analyze how living cells respond to conducting polymers. Their application for tissue regeneration may advance the performance of drug eluting stents by addressing the delayed stent re-endothelialization and late stent thrombosis. METHODS: The suitability of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films for stents to promote cell adhesion and proliferation is tested in correlation with doping and physicochemical properties. PEDOT doped either with poly (styrenesulfonate) (PSS) or tosylate anion (TOS) was used for films' fabrication by spin coating and vapor phase polymerization respectively. PEGylation of PEDOT: TOS for reduced immunogenicity and biofunctionalization of PEDOT: PSS with RGD peptides for induced cell proliferation was further applied. Atomic Force Microscopy and Spectroscopic Ellipsometry were implemented for nanotopographical, structural, optical and conductivity measurements in parallel with wettability and protein adsorption studies. Direct and extract testing of cell viability and proliferation of L929 fibroblasts on PEDOT samples by MTT assay in line with SEM studies follow. RESULTS: All PEDOT thin films are cytocompatible and promote human serum albumin adsorption. PEDOT:TOS films were found superior regarding cell adhesion as compared to controls. Their nanotopography and hydrophilicity are significant factors that influence cytocompatibility. PEGylation of PEDOT:TOS increases their conductivity and hydrophilicity with similar results on cell viability with bare PEDOT:TOS. The biofunctionalized PEDOT:PSS thin films show enhanced cell proliferation. CONCLUSIONS: The application of PEDOT polymers has evolved as a new perspective to advance stents. GENERAL SIGNIFICANCE: In this work, nanomedicine involving nanotools and novel nanomaterials merges with bioelectronics to stimulate tissue regeneration for cardiovascular implants. This article is part of a Special Issue entitled Organic Bioelectronics - Novel Applications in Biomedicine.

Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1-xMnxSb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1-xMnxSb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1-xMnxSb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

Influence of different interlayers on growth mode and properties of InN by MOVPE

We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Raman spectroscopy technique has been performed to investigate the stress induced in as-grown silicon-on-sapphire (SOS), solid-phase-epitaxy (SPE) re-grown SOS, and Si/gamma-Al2O3/Si double-heteroepitaxial thin films. It was demonstrated that the residual stress in SOS film, arising from mismatch and difference of thermal expansion coefficient between silicon and sapphire, was reduced efficiently by SPE process, and that the stress in Si/gamma-Al2O3/Si thin film is much smaller than that of as-grown SOS and SPE upgraded SOS films. The stress decrease for double heteroepitaxial film Si/gamma-Al2O3/Si mainly arises from the smaller lattice mismatching of 2.4% between silicon top layer and the gamma-Al2O3/Si epitaxiial composite substrate, comparing with the large lattice mismatch of 13% for SOS films. It indicated that gamma-Al2O3/Si as a silicon-based epitaxial substrate benefits for reducing the residual stress for further growth of silicon layer, compared with on bulk sapphire substrate. (c) 2005 Elsevier B.V. All rights reserved.

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

Structural, photoluminescence, and field emission properties of vertically well-aligned ZnO nanorod arrays

The self-assembled growth of vertically well-aligned ZnO nanorod arrays with uniform length and diameter on Si substrate has been demonstrated via thermal evaporation and vapor-phase transport. The structural, photoluminescence (PL), and field emission properties of the as-prepared nanorod arrays were investigated. The PL spectrum at 10 K shows a strong and sharp near-band gap emission (NBE) peak ( full width at half-maximum (FWHM) = 4.7 meV) and a weak neglectable deep-level emission (DL) peak (I-NBE/I-DL= 220), which implies its good crystallinity and high optical quality. The room-temperature NBE peak was deduced to the composition of free exciton and its first-order replicas emissions by temperature-dependent PL spectra. The field emission measurements indicate that, with a vacuum gap of 400 Am, the turn-on field and threshold field is as low as 2.3 and 4.2 V/mu m. The field enhancement factor beta and vacuum gap d follows a universal equation.