Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb

Les antimoniures sont des semi-conducteurs III-V prometteurs pour le développement de dispositifs optoélectroniques puisqu'ils ont une grande mobilité d'électrons, une large gamme spectrale d'émission ou de détection et offrent la possibilité de former des hétérostructures confinées dont la recombinaison est de type I, II ou III. Bien qu'il existe plusieurs publications sur la fabrication de dispositifs utilisant un alliage d'In(x)Ga(1-x)As(y)Sb(1-y) qui émet ou détecte à une certaine longueur d'onde, les détails, à savoir comment sont déterminés les compositions et surtout les alignements de bande, sont rarement explicites. Très peu d'études fondamentales sur l'incorporation d'indium et d'arsenic sous forme de tétramères lors de l'épitaxie par jets moléculaires existent, et les méthodes afin de déterminer l'alignement des bandes des binaires qui composent ces alliages donnent des résultats variables. Un modèle a été construit et a permis de prédire l'alignement des bandes énergétiques des alliages d'In(x)Ga(1-x)As(y)Sb(1-y) avec celles du GaSb pour l'ensemble des compositions possibles. Ce modèle tient compte des effets thermiques, des contraintes élastiques et peut aussi inclure le confinement pour des puits quantiques. De cette manière, il est possible de prédire la transition de type de recombinaison en fonction de la composition. Il est aussi montré que l'indium ségrègue en surface lors de la croissance par épitaxie par jets moléculaires d'In(x)Ga(1-x)Sb sur GaSb, ce qui avait déjà été observé pour ce type de matériau. Il est possible d'éliminer le gradient de composition à cette interface en mouillant la surface d'indium avant la croissance de l'alliage. L'épaisseur d'indium en surface dépend de la température et peut être évaluée par un modèle simple simulant la ségrégation. Dans le cas d'un puits quantique, il y aura une seconde interface GaSb sur In(x)Ga(1-x)Sb où l'indium de surface ira s'incorporer. La croissance de quelques monocouches de GaSb à basse température immédiatement après la croissance de l'alliage permet d'incorporer rapidement ces atomes d'indium et de garder la seconde interface abrupte. Lorsque la composition d'indium ne change plus dans la couche, cette composition correspond au rapport de flux d'atomes d'indium sur celui des éléments III. L'arsenic, dont la source fournit principalement des tétramères, ne s'incorpore pas de la même manière. Les tétramères occupent deux sites en surface et doivent interagir par paire afin de créer des dimères d'arsenic. Ces derniers pourront alors être incorporés dans l'alliage. Un modèle de cinétique de surface a été élaboré afin de rendre compte de la diminution d'incorporation d'arsenic en augmentant le rapport V/III pour une composition nominale d'arsenic fixe dans l'In(x)Ga(1-x)As(y)Sb(1-y). Ce résultat s'explique par le fait que les réactions de deuxième ordre dans la décomposition des tétramères d'arsenic ralentissent considérablement la réaction d'incorporation et permettent à l'antimoine d'occuper majoritairement la surface. Cette observation montre qu'il est préférable d'utiliser une source de dimères d'arsenic, plutôt que de tétramères, afin de mieux contrôler la composition d'arsenic dans la couche. Des puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur GaSb ont été fabriqués et caractérisés optiquement afin d'observer le passage de recombinaison de type I à type II. Cependant, celui-ci n'a pas pu être observé puisque les spectres étaient dominés par un niveau énergétique dans le GaSb dont la source n'a pu être identifiée. Un problème dans la source de gallium pourrait être à l'origine de ce défaut et la résolution de ce problème est essentielle à la continuité de ces travaux.

Dispositifs optoélectroniques à base de semi-conducteurs organiques en couches minces

Les petites molécules de type p à bandes interdites étroites sont de plus en plus perçues comme des remplaçantes possibles aux polymères semi-conducteurs actuellement utilisés conjointement avec des dérivés de fullerènes de type n, dans les cellules photovoltaïques organiques (OPV). Par contre, ces petites molécules tendent à cristalliser facilement lors de leur application en couches minces et forment difficilement des films homogènes appropriés. Des dispositifs OPV de type hétérojonction de masse ont été réalisés en ajoutant différentes espèces de polymères semi-conducteurs ou isolants, agissant comme matrices permettant de rectifier les inhomogénéités des films actifs et d’augmenter les performances des cellules photovoltaïques. Des polymères aux masses molaires spécifiques ont été synthétisés par réaction de Wittig en contrôlant précisément les ratios molaires des monomères et de la base utilisée. L’effet de la variation des masses molaires en fonction des morphologies de films minces obtenus et des performances des diodes organiques électroluminescentes reliées, a également été étudié. La microscopie électronique en transmission (MET) ou à balayage (MEB) a été employée en complément de la microscopie à force atomique (AFM) pour suivre l’évolution de la morphologie des films organiques minces. Une nouvelle méthode rapide de préparation des films pour l’imagerie MET sur substrats de silicium est également présentée et comparée à d’autres méthodes d’extraction. Motivé par le prix élevé et la rareté des métaux utilisés dans les substrats d’oxyde d’indium dopé à l’étain (ITO), le développement d’une nouvelle méthode de recyclage eco-responsable des substrats utilisés dans ces études est également présenté.

Advanced Analytical Microscopy at the Nanoscale: Applications in Wide Bandgap and Solid Oxide Fuel Cell Materials

The atomic-level structure and chemistry of materials ultimately dictate their observed macroscopic properties and behavior. As such, an intimate understanding of these characteristics allows for better materials engineering and improvements in the resulting devices. In our work, two material systems were investigated using advanced electron and ion microscopy techniques, relating the measured nanoscale traits to overall device performance. First, transmission electron microscopy and electron energy loss spectroscopy (TEM-EELS) were used to analyze interfacial states at the semiconductor/oxide interface in wide bandgap SiC microelectronics. This interface contains defects that significantly diminish SiC device performance, and their fundamental nature remains generally unresolved. The impacts of various microfabrication techniques were explored, examining both current commercial and next-generation processing strategies. In further investigations, machine learning techniques were applied to the EELS data, revealing previously hidden Si, C, and O bonding states at the interface, which help explain the origins of mobility enhancement in SiC devices. Finally, the impacts of SiC bias temperature stressing on the interfacial region were explored. In the second system, focused ion beam/scanning electron microscopy (FIB/SEM) was used to reconstruct 3D models of solid oxide fuel cell (SOFC) cathodes. Since the specific degradation mechanisms of SOFC cathodes are poorly understood, FIB/SEM and TEM were used to analyze and quantify changes in the microstructure during performance degradation. Novel strategies for microstructure calculation from FIB-nanotomography data were developed and applied to LSM-YSZ and LSCF-GDC composite cathodes, aged with environmental contaminants to promote degradation. In LSM-YSZ, migration of both La and Mn cations to the grain boundaries of YSZ was observed using TEM-EELS. Few substantial changes however, were observed in the overall microstructure of the cells, correlating with a lack of performance degradation induced by the H2O. Using similar strategies, a series of LSCF-GDC cathodes were analyzed, aged in H2O, CO2, and Cr-vapor environments. FIB/SEM observation revealed considerable formation of secondary phases within these cathodes, and quantifiable modifications of the microstructure. In particular, Cr-poisoning was observed to cause substantial byproduct formation, which was correlated with drastic reductions in cell performance.

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates

We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 112̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.

Self-healing thermal annealing: surface morphological restructuring control of GaN nanorods

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.

Solid state micro and nanopore sensors for single entity detection

A general description of the work presented in this thesis can be divided into three areas of interest: micropore fabrication, nanopore modification, and their applications. The first part of the thesis is related to the novel, reliable, cost-effective, potable, mass-productive, robust, and ease of use micropore flowcell that works based on the RPS technique. Based on our first goal, which was finding an alternate materials and processes that would shorten production times while lowering costs and improving signal quality, the polyimide film was used as a substrate to create precise pores by femtosecond laser, and the resulting current blockades of different sizes of the nanoparticles were recorded. Based on the results, the device can detecting nano-sized particles by changing the current level. The experimental and theoretical investigation, scanning electron microscopy, and focus ion beam were performed to explain the micropore's performance. The second goal was design and fabrication of a leak-free, easy-to-assemble, and portable polymethyl methacrylate flowcell for nanopore experiments. Here, ion current rectification was studied in our nanodevice. We showed a self-assembly-based, controllable, and monitorable in situ Poly(l-lysine)- g-poly(ethylene glycol) coating method under voltage-driven electrolyte flow and electrostatic interaction between nanopore walls and PLL backbones. Using designed nanopore flowcell and in situ monolayer PLL-g-PEG functionalized 20±4 nm SiN nanopores, we observed non-sticky α-1 anti-trypsin protein translocation. additionally, we could show the enhancement of translocation events through this non-sticky nanopore, and also, estimate the volume of the translocated protein. In this study, by comparing the AAT protein translocation results from functionalized and non-functionalized nanopore we demonstrated the 105 times dwell time reduction (31-0.59ms), 25% amplitude enhancement (0.24-0.3 nA), and 15 times event’s number increase (1-15events/s) after functionalization in 1×PBS at physiological pH. Also, the AAT protein volume was measured, close to the calculated AAT protein hydrodynamic volume and previous reports.

Adsorption of dihydrogen phosphate ion on platinum electrodes in aqueous media monitored by probe-beam deflection

Probe-beam deflection (PBD) was used to monitor concentration gradients of anions adjacent to the surface of a platinum electrode in acidic aqueous media containing H3PO4. PBD can measure the potential-dependent extent of adsorption of H2PO4- on the Pt electrode surface and permits the Langmuir isotherm to be fitted to the experimental data. The value thus obtained for the surface concentration was 1.3 × 10-11 mol mm -2, or 1.7 atoms of Pt per H2PO4-. Also, the electron transfer number obtained was 0.24, signifying an incomplete transfer of charge, and the equilibrium constant is 1.80 suggesting a reversible adsorption process. © 2005 Elsevier B.V. All rights reserved.

Beam-energy Dependence Of The Directed Flow Of Protons, Antiprotons, And Pions In Au+au Collisions.

Rapidity-odd directed flow (v1) measurements for charged pions, protons, and antiprotons near midrapidity (y=0) are reported in sNN=7.7, 11.5, 19.6, 27, 39, 62.4, and 200 GeV Au+Au collisions as recorded by the STAR detector at the Relativistic Heavy Ion Collider. At intermediate impact parameters, the proton and net-proton slope parameter dv1/dy|y=0 shows a minimum between 11.5 and 19.6 GeV. In addition, the net-proton dv1/dy|y=0 changes sign twice between 7.7 and 39 GeV. The proton and net-proton results qualitatively resemble predictions of a hydrodynamic model with a first-order phase transition from hadronic matter to deconfined matter, and differ from hadronic transport calculations.

Beam-energy Dependence Of Charge Separation Along The Magnetic Field In Au+au Collisions At Rhic.

Local parity-odd domains are theorized to form inside a quark-gluon plasma which has been produced in high-energy heavy-ion collisions. The local parity-odd domains manifest themselves as charge separation along the magnetic field axis via the chiral magnetic effect. The experimental observation of charge separation has previously been reported for heavy-ion collisions at the top RHIC energies. In this Letter, we present the results of the beam-energy dependence of the charge correlations in Au+Au collisions at midrapidity for center-of-mass energies of 7.7, 11.5, 19.6, 27, 39, and 62.4 GeV from the STAR experiment. After background subtraction, the signal gradually reduces with decreased beam energy and tends to vanish by 7.7 GeV. This implies the dominance of hadronic interactions over partonic ones at lower collision energies.

Beam Energy Dependence Of Moments Of The Net-charge Multiplicity Distributions In Au+au Collisions At Rhic.

We report the first measurements of the moments--mean (M), variance (σ(2)), skewness (S), and kurtosis (κ)--of the net-charge multiplicity distributions at midrapidity in Au+Au collisions at seven energies, ranging from sqrt[sNN]=7.7 to 200 GeV, as a part of the Beam Energy Scan program at RHIC. The moments are related to the thermodynamic susceptibilities of net charge, and are sensitive to the location of the QCD critical point. We compare the products of the moments, σ(2)/M, Sσ, and κσ(2), with the expectations from Poisson and negative binomial distributions (NBDs). The Sσ values deviate from the Poisson baseline and are close to the NBD baseline, while the κσ(2) values tend to lie between the two. Within the present uncertainties, our data do not show nonmonotonic behavior as a function of collision energy. These measurements provide a valuable tool to extract the freeze-out parameters in heavy-ion collisions by comparing with theoretical models.