Systematic investigation of automated plan generation for breast cancer including beam angle and isocenter selection

Il tumore al seno è il più comune tra le donne nel mondo. La radioterapia è comunemente usata dopo la chirurgia per distruggere eventuali cellule maligne rimaste nel volume del seno. Nei trattamenti di radioterapia bisogna cercare di irradiare il volume da curare limitando contemporaneamente la tossicità nei tessuti sani. In clinica i parametri che definiscono il piano di trattamento radioterapeutico sono selezionati manualmente utilizzando un software di simulazione per trattamenti. Questo processo, detto di trial and error, in cui i differenti parametri vengono modificati e il trattamento viene simulato nuovamente e valutato, può richiedere molte iterazioni rendendolo dispendioso in termini di tempo. Lo studio presentato in questa tesi si concentra sulla generazione automatica di piani di trattamento per irradiare l'intero volume del seno utilizzando due fasci approssimativamente opposti e tangenti al paziente. In particolare ci siamo concentrati sulla selezione delle direzioni dei fasci e la posizione dell'isocentro. A questo scopo, è stato investigata l'efficacia di un approccio combinatorio, nel quale sono stati generati un elevato numero di possibili piani di trattamento utilizzando differenti combinazioni delle direzioni dei due fasci. L'intensità del profilo dei fasci viene ottimizzata automaticamente da un algoritmo, chiamato iCycle, sviluppato nel ospedale Erasmus MC di Rotterdam. Inizialmente tra tutti i possibili piani di trattamento generati solo un sottogruppo viene selezionato, avente buone caratteristiche per quel che riguarda l'irraggiamento del volume del seno malato. Dopo di che i piani che mostrano caratteristiche ottimali per la salvaguardia degli organi a rischio (cuore, polmoni e seno controlaterale) vengono considerati. Questi piani di trattamento sono matematicamente equivalenti quindi per selezionare tra questi il piano migliore è stata utilizzata una somma pesata dove i pesi sono stati regolati per ottenere in media piani che abbiano caratteristiche simili ai piani di trattamento approvati in clinica. Questo metodo in confronto al processo manuale oltre a ridurre considerevol-mente il tempo di generazione di un piano di trattamento garantisce anche i piani selezionati abbiano caratteristiche ottimali nel preservare gli organi a rischio. Inizialmente è stato utilizzato l'isocentro scelto in clinica dal tecnico. Nella parte finale dello studio l'importanza dell'isocentro è stata valutata; ne è risultato che almeno per un sottogruppo di pazienti la posizione dell'isocentro può dare un importante contributo alla qualità del piano di trattamento e quindi potrebbe essere un ulteriore parametro da ottimizzare. 

Progress in x-ray spectroscopies for the study of advanced materials

This thesis work is focused on the use of selected core-level x-ray spectroscopies to study semiconductor materials of great technological interest and on the development of a new implementation of appearance potential spectroscopy. Core-level spectroscopies can be exploited to study these materials with a local approach since they are sensitive to the electronic structure localized on a chemical species present in the sample examined. This approach, in fact, provides important micro-structural information that is difficult to obtain with techniques sensitive to the average properties of materials. In this thesis work we present a novel approach to the study of semiconductors with core-level spectroscopies based on an original analysis procedure that leads to an insightful understanding of the correlation between the local micro-structure and the spectral features observed. In particular, we studied the micro-structure of Hydrogen induced defects in nitride semiconductors, since the analysed materials show substantial variations of optical and electronic properties as a consequence of H incorporation. Finally, we present a novel implementation of soft x-ray appearance potential spectroscopy, a core-level spectroscopy that uses electrons as a source of excitation and has the great advantage of being an in-house technique. The original set-up illustrated was designed to reach a high signal-to-noise ratio for the acquisition of good quality spectra that can then be analyzed in the framework of the real space full multiple scattering theory. This technique has never been coupled with this analysis approach and therefore our work unite a novel implementation with an original data analysis method, enlarging the field of application of this technique.

Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

Nanoscale-electrical and optical properties of iii-nitrides

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.

Ion implantation of organic thin films and electronic devices

Organic semiconductors have great promise in the field of electronics due to their low cost in term of fabrication on large areas and their versatility to new devices, for these reasons they are becoming a great chance in the actual technologic scenery. Some of the most important open issues related to these materials are the effects of surfaces and interfaces between semiconductor and metals, the changes caused by different deposition methods and temperature, the difficulty related to the charge transport modeling and finally a fast aging with time, bias, air and light, that can change the properties very easily. In order to find out some important features of organic semiconductors I fabricated Organic Field Effect Transistors (OFETs), using them as characterization tools. The focus of my research is to investigate the effects of ion implantation on organic semiconductors and on OFETs. Ion implantation is a technique widely used on inorganic semiconductors to modify their electrical properties through the controlled introduction of foreign atomic species in the semiconductor matrix. I pointed my attention on three major novel and interesting effects, that I observed for the first time following ion implantation of OFETs: 1) modification of the electrical conductivity; 2) introduction of stable charged species, electrically active with organic thin films; 3) stabilization of transport parameters (mobility and threshold voltage). I examined 3 different semiconductors: Pentacene, a small molecule constituted by 5 aromatic rings, Pentacene-TIPS, a more complex by-product of the first one, and finally an organic material called Pedot PSS, that belongs to the branch of the conductive polymers. My research started with the analysis of ion implantation of Pentacene films and Pentacene OFETs. Then, I studied totally inkjet printed OFETs made of Pentacene-TIPS or PEDOT-PSS, and the research will continue with the ion implantation on these promising organic devices.